InGaAs Avalanche Photodiode. IAG-Series

Transcription

1 InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eye-safe rangefinding applications, free space optical communications, OTDR and high resolution Optical Coherence Tomography. The chip is hermetically sealed in a modified TO-46 package or mounted on a ceramic submount. FEATURES 80, 200 or 350 μm active area Bandwidth up to 2.5 GHz Over 70% QE from 1000 to 1600 nm Low dark current & noise Modified TO-46 or ceramic submount APPLICATIONS Rangefinding Optical Communication Systems Optical Coherence Tomography Low-light-level detection GENERIC CHARACTERISTICS AT T= 21 C IAG-Series Min Typ Max Units Wavelength Range nm Peak Sensitivity 1550 nm Page 1

2 ABSOLUTE MAXIMUM RATINGS IAG 080X / IAG 200X IAG 350X Min Typ Max Units Min Typ Max Units Storage Temperature C C Operating Temperature* C 0 70 C Max. Reverse Current 1 ma 1 ma Max. Forward Current 0 10 ma 0 10 ma Optical Input (10 ns pulse) 200 kw/cm² kw/cm² Optical Input (average) 0 dbm 0 dbm Soldering (for 5 sec.) 200 C 200 C * Extended operating temperature range possible for special design considerations (Tc= 25 C, =1550 nm) IAG 080X IAG 200X IAG 350X Parameter Min Typical Max Min Typical Max Min Typical Max Units Active Diameter μm M= nm wavelength A/W Dark M= na Operating voltage, M= Volt Breakdown Voltage, Vbr (l d = 10 μa) Volt Capacitance pf Temperature coeff. of Vbr V/ C M= GHz M= GHz M= GHz Excess Noise Factor, M= Excess Noise Factor, M= Noise Equivalent Power, M= pw/hz ½ Page 2

3 Fig.1: Spectral Response and Quantum Efficiency 1550 nm) Fig.2: Responsivity-Voltage Characteristics (25 degrees C) 12,00 Spectral Response (M~10) 90% nm Responsivity vs Bias (Aprox. Gain Characteristics) 80% 10,00 70% 30 Responsivity (A/W) 8,00 6,00 4,00 60% 50% 40% 30% Quantum Efficiency Responsivity (A/W) 20 20% 10 2,00 10% 0,00 0% Wavelength (nm) Responsivity Quantum Efficiency Bias Voltage (V) Fig. 3: Typical APD Noise Density as a Function of Gain Fig. 4: Capacitance vs. Reverse Voltage 8E-13 Noise vs. Gain 2,05 Capacitance vs Bias Voltage 2 Noise Density (A/rtHz) 6E-13 4E-13 2E-13 Capacitance (pf) 1,95 1,9 1,85 1,8 1, Gain 1, Bias Voltage (V) Note: Fig. 3 - Fig. 4 only valid for IAG 200-Series PRODUCT NUMBER DESIGNATIONS I A G Diameter 080 = 80 μm 200 = 200 μm 350 = 350 μm Package Style S5= TO-46 (2 pin) S6= TO-46 (3 pin) S7= TO-46 (low profile) T6= TO-37 (with TEC) T8= TO-8 (with TEC) Y1= ceramic submount Page 3

4 PACKAGE DRAWINGS Package S5 TO-46 (2 pin) Package S6 TO-46 (3 pin) Page 4

5 Package S7 TO-46 (low profile) Note: Only available for IAG 080-chip Package T6 TO-37 (with TEC) Page 5

6 Package T8 TO-8 (with TEC) Package Y1 Ceramic Submount PRODUCT CHANGES LASER COMPONENTS reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. ORDERING INFORMATION Products can be ordered directly from LASER COMPONENTS or its representatives. For a complete listing of representatives, visit our website at Custom designed products are available on request. 09/09 / V4 / HW / lcd/ iag-series_ingaas.doc Page 6