A Spectrum of Aerospace and Defense Solutions

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1 PktFldr_001 Page PktFldr:Layout 1 3/10/11 10-MAR-11 8:24 AM Page 1 M/A-COM Technology Solutions Military Communications M/A-COM Technology Solutions Aerospace and Defense mm Wave and EW A Spectrum of Aerospace and Defense Solutions Discrete Components, MMICs and Integrated Modules Radar Solutions for Challenging Military Communications Applications High Power MELF PIN Diodes High Performance Surface Mount VCOs UHF and VHF High Power Transistors and Modules RF and Microwave Broadband Components (COTS) High Frequency and Ultra Broadband Solutions High Performance AlGaAs PIN Diode Switches Phased Array Radar Electronic Warfare High Power GaN Transistors High Power Bipolar RF Transistors and Pallets Affordable Aerospace and Defense Solutions COTS Components for Phased Array Applications U.S. Army photo by Martin Greeson Communications The Counter Remotely-Controlled IED Electronic Warfare system, or CREW Duke system Photo courtesy of U.S. Army Avionics MILCOM North America India China (Shanghai) MTS-L Cyan Magenta Yellow Black Die The Signature Group

2 Integrated Modules and Discrete Components for Radar and EW Applications Quality and Reliability The goal of M/A-COM Technology Solutions is to continually deliver effective, high quality products and services that meet our customers and internal operations needs in terms of delivery, performance, safety and value. Process controls are implemented such that the tasks are performed properly the first time, so that products and services meet established, agreed-to requirements. It is the personal responsibility of every employee to ensure quality, customer satisfaction, continual improvement, maintenance of our quality management system and compliance with customer and regulatory requirements. Aerospace and defense applications require a diverse suite of RF components that support a broad range of system architectures. From military communications to radar and sensing to electronic warfare, today s battlefield systems require high performance, the utmost in reliability and affordability to provide our warfighters with the tools they deserve. M/A-COM Technology Solutions has supported the demanding needs of the aerospace and defense more than 60 years. Our engineers understand and deliver the performance that keeps our warfighters safe. M/A-COM Tech offers a broad range of products and technical capabilities that meet today s aerospace and defense requirements support systems with both standard and custom solutions. M/A-COM Tech uses high volume, dual use processes to create aerospace and defense applications: Si bipolar and LDMOS power transistors Si, GaAs and AlGaAs diodes GaAs MESFET and phemt-based MMICs Hybrid components both passive and active Hermetic and printed circuit board-based modules and assemblies Our extensive design experience, coupled with our assembly and automated test capability, makes M/A-COM Tech uniquely qualified to address the most demanding aerospace and defense specifications.

3 Military Communications Products Solutions for Challenging Military Communications Applications M/A-COM Technology Solutions offers a broad portfolio of standard products which support military and public radio applications. Whether for the transmit chain or the receive chain, M/A-COM Tech creates compelling components for this demanding market: Silicon-based power transistors and modules MMIC-based amplifiers and control components Hybrid mixers, couplers, transformers/baluns, power dividers, modulators and demodulators For more details, contact your M/A-COM Tech sales office or visit MMIC Amplifiers and Modules (HBT, phemt, MESFET) E-Series Mixers E-Series Passives T/R Switches (GaAs MMICs, Diode ICs and Discretes) Low Phase Noise VCOs MMIC Amplifiers and Modules (HBT, phemt, MESFET) Power Transistors and Amplifier Modules Attenuators: Variable and Digital (MMIC and PIN) Discrete Diodes (Varactor and Schottky)

4 Military Communications Products High Power MELF PIN Diodes M/A-COM Technology Solutions high power MELF PIN diodes are well suited for the demanding needs of today s military radio systems. Our PIN diodes have been deployed in numerous battlefield radios for many years, providing the performance and reliability required for critical warfighter communications. MELF PIN diodes are: Ideal for applications from DC to 1GHz Surface mount hermetic package with low RF resistance (R S ) and thermal resistance(θ) the ultimate choice for power switch applications High breakdown voltage (V R ) ideal for high peak voltage applications such as vehicular mounted radios Low distortion vs. forward current optimal for stringent attenuator applications Available in tape and reel for high volume manufacturing For more details, contact your M/A-COM Tech sales office or visit MA4PH T MA4P T MA4P T MA4P4001F-1091T MA4P7101F-1072T MA4P7001F-1072T MA4P4301F-1091T MA4P4002F-1091T MA4P7102F-1079T MA4P7002F-1072T MA4PH T MA4P7104F-1072T MA4P T MA4P T MA4P T MA4P4006F-1091T MA4P7006F-1072T

5 Military Communications Products High Performance Surface Mount Voltage Controlled Oscillators M/A-COM Technology Solutions surface mount VCOs support applications from 45 MHz to 4 GHz. They are ideal for military and private mobile radios. In addition to these state-of-the-art VCOs, M/A-COM Tech also offers a broad range of diodes, transistors, MMICs, and passive products a comprehensive solution set for military communications. Our VCOs feature: Low phase noise Our specialty 100% factory tested Cost Extremely competitive A selection of our latest design releases is shown below. For more details, contact your M/A-COM Tech sales office or visit /VCOs Power Tune Phase Noise Power Tuning VCO Frequency Output Voltage SSB Supply Temp Sensitivity Type Package Part Number (MHz) (dbm) (V) Range ( C) Offset Freq Typical Vcc (V) Ic (ma) (Band) Min Max 10 khz 25 khz 1 MHz (MHz/V) Style Min Max Nom Max Min Max MAVC Single LSM1 MAVC Dual LSM13 MAVC Dual LSM11 MAVC Dual LSM13 MAVC Single LSM17 MAVC Single LSM11 MAVC Dual LSM11 MAVC Single LSM17 MAVC Single LSM17 MAVC Single LSM14 LSM1 x x 4 mm LSM11 x x 5.5 mm LSM x 9.5 x 5.5 mm x MAX LSM14 x x 7 mm LSM x 8.0 x 2.9 mm 2.9 MAX PIN

6 Military Communications Products UHF and VHF High Power Transistors and Modules M/A-COM Technology Solutions silicon MOS technology forms the foundation of our broad product portfolio of discrete UHF and VHF high power transistors and modules. These devices are ideal for transmit applications for military communications and private mobile radios. Qualified to MIL-PRF-19500, these devices display the ruggedness and reliability required for demanding battlefield applications. For more details, contact your M/A-COM Tech sales office or visit 200 MAPP C2X (24-28 V) 100 MAPM C28 (28 V) 60 MAPM C00 (24-28 V) Power (W) MAPM C00 (24-28 V) MAPM C12 (12-16 V) MAPM C00 (24-28 V) 10 MAPM C00 (24-28 V) Frequency (MHz) RF Power Transistors: Bipolar Frequency Operating Pout Minimum Gain Minimum Efficiency (MHz) Part Number Voltage (V) (W) (db) (%) Package 1-30 MRF P MRF P MRF P MRF P MRF P MRF P MRF P208A 2-30 MRF P MRF P-222A MRF P MRF P-210

7 Military Communications Products UHF and VHF High Power Transistors and Modules Power Transistors: Bipolar Frequency Operating Pout Minimum Gain Minimum Efficiency (MHz) Part Number Voltage (V) (W) (db) (%) Package MRF P MRF P MRF P MRF P MRF P N P MRF P PH BAL-3 Power Transistors: DMOS Frequency Operating Pout Minimum Gain Minimum Efficiency (MHz) Part Number Voltage (V) (W) (db) (%) Package 2-88 FH P FH P DU1215S P DU1230S P DU1260T P DU2805S P DU2810S P DU28120T P DU28120V P-34A DU28200M P DU2820S P DU2840S P DU2860T P DU2860U P DU2880T P DU2880U P DU2880V P34A UF2805B P-83B UF28100H BAL-3 (hermetic) UF28100M P UF28100V P-34A UF2810P P UF28150J P UF2815B P-83B UF2820P P UF2820R P UF2840G SS-1E UF2840P P LF2802A SS-1D LF2805A SS-1D LF2810A SS-1D Note: Part numbers are RoHS compliant indicates non-rohs compliant Detailed specifications for our standard parts can be found quickly on our website at by typing the part number into the search box. All specifications are subject to change.

8 UHF and VHF High Power Transistors and Modules RF Power Transistors: TMOS Frequency Operating Pout Minimum Gain Minimum Efficiency (MHz) Part Number Voltage (V) (W) (db) (%) Package 2-80 MRF P MRF P MRF P MRF P MRF P MRF141G P MRF148A P MRF P MRF151G P MRF P MRF173CQ P MRF P MRF171A P MRF175GV P MRF176GV P MRF175GU P MRF P MRF P MRF136Y P MRF P MRF175LU P MRF176GU P MRF P MRF P MRF P MRF166C P MRF166W P MRF275G P MRF275L P-225

9 Military Communications Products UHF and VHF High Power Transistors and Modules High Power GaN Transistors M/A-COM Technology Solutions is developing a full range of products utilizing Gallium Nitride (GaN) on Silicon Carbide. GaN technology offers the following advantages: Wider operational bandwidths High voltage operation Higher efficiency Superior power density Higher gain Longer pulse widths Easy to broadband For more details, contact your local M/A-COM Tech sales office or visit The following GaN Transistors are scheduled to be released in GaN Transistors Part Frequency Pout Gain Efficiency Number (MHz) (W) (db) (%) MAGX MAGX MAGX MAGX MAGX MAGM MAGM

10 Commercial Off The Shelf (COTS) RF and Microwave Broadband Components for MILCOM and Radar M/A-COM Technology Solutions is a leading supplier of Commercial Off-The-Shelf (COTS) products for the aerospace and defense markets. Our broad product portfolio includes heritage-rich brands such as M/A-COM, Omni Spectra, Watkins-Johnson, and more. Our COTS products offer the same sophistication and performance as custom-designed products, but are available immediately. They are used in radar, communications, electronic warfare, and missile guidance. Industry-wide, M/A-COM Tech is recognized for the high reliability performance of its component designs. We have a solid track record in helping our customers reduce costs, shorten design cycles, and ramp up production. Strong global customer base COTS products are commerce controlled EAR99 Lean manufacturing facilities in the US and Pacific Rim M/A-COM Tech also offers customer-specific design capabilities. Environmental screening is available on most products. Additionally, we offer expertise in replacement designs for obsolete or discontinued products. Our applications engineering support team is responsive, flexible, innovative, and ready to help you with your next project. For more details, contact your M/A-COM Tech sales office or visit 50 Ohm Hybrid Components Class A Amplifiers Frequency Part Gain Rev Isolation Noise VSWR P1dB OIP3 Phase Noise Voltage Current (MHz) Number (db) (db) Figure (db) In/Out (dbm) (dbm) (dbc/hz) (Vdc) (ma) Package A : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA AM-147-PIN : TO-8-1/SMA PA : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA 10 khz A : / TO-8/SMT0-8/CA MAAM SA : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA PA : TO-8/SMT0-8/CA A : TO-8/SMT0-8/CA : TO-8/SMT0-8/CA Limiting Amplifiers Frequency Part Gain Noise VSWR P1dB OIP3 Voltage Current (MHz) Number (db) Figure (db) In/Out (dbm) (dbm) (Vdc) (ma) Package SMLA : TO-8/SMT0-8/CA LA : TO-8/SMT0-8/CA LA : TO-8/SMT0-8/CA LA : TO-8/SMT0-8/CA

11 Signal Limiters Even Order Frequency Part Insertion VSWR Output Limiting OIP3 (dbm) Harmonic Voltage Current (MHz) Number Loss (db) In/Out Level* (db) (dbm) Supression (dbc) (Vdc) (ma) Package L : TO-8/SMT0-8/CA L : TO-8/SMT0-8/CA * Pin = +20 dbm Max Voltage Control Analog Attenuators Part Insertion Attenuation Harmonic Switching Linearizer Frequency Number Loss Range Distortion Speed Module Voltage Current (MHz) (db) (db) (db) (dbc) (µsec) (Vdc) (ma) Package G < 60, 10% - 90% LG1 0 to 15 4 TO-8/SMT0-8/CA G < 500, 10% - 90% 0 to 15 6 TO-8/SMT0-8/CA Mixers Frequency Frequency Part LO Drive Conversion Loss Isolation Compression Input P1dB RF/LO (MHz) IF (MHz) Number (dbm) (db) LO/RF (db) (db) (dbm) Package SM6D SMT SM4T SMT MD FP MD FP M2A TO-8/SMA MD FP M8H TO-8/SMA M Minpac/SMA MY76H Versapac/SMA MZ Versapac/SMA MZ Versapac/SMA MY83H Versapac/SMA MY Versapac/SMA MZ Versapac/SMA M Minpac/SMA MY Versapac/SMA M Minpac/SMA Couplers Frequency Part Coupling Insertion Maximum Isolation (MHz) Number (db) Loss(dB) Power (W) (db) Package CH/CHS FP-2/SF CH FP JH FP-2 Power Splitters / Combiners Frequency Part Isolation Phase Balance Amplitude (MHz) Number Channels (db) (degrees) Balance (db) Package MTH TO DS FP DS FP DS TO DS/ DSS FP-2/SF DS FP DS/ DSS FP-2/SF-1 Performance is +25 C. Sample list of available models from an extensive product line selection Detailed specifications for our standard parts can be found quickly on our website at by typing the part number into the search box. All specifications are subject to change.

12 mm Wave and Electronic Warfare High Frequency and Ultra Broadband Solutions M/A-COM Technology Solutions offers a comprehensive portfolio of millimeter wave MMIC products. Leveraging dual-use technology, we offer both discrete functions as well as highly integrated soltuions. We also offer a range of multi-octoave, broadband distributed amplifiers, ideal for many millimeter wave or electronic warfare applications. M/A-COM Tech uses high volume, dual use processes to create compelling products for aerospace and defense applications: Si bipolar and LDMOS power transistors Si, GaAs and AlGaAs diodes GaAs MESFET and phemt based MMICs Hybrid components both passive and active Hermetic and printed circuit board based-modules and assemblies Our extensive design experience coupled with our semiconductor processing, assembly and automated test capability make us uniquely qualified to address the most demanding aerospace and defense specifications. For more details, contact your M/A-COM Tech sales office or visit Frequency Operating P1dB Gain OIP3 (GHz) Part Number Description Voltage (V) (dbm) (db) (dbm) Package XP1027-BD Power Amplifier Bare Die XP1026-BD Power Amplifier Bare Die XP1080-QU Power Amplifier x7 Laminate XB1014-QT Driver Amplifier x3 QFN XX1000-QT Doubler 5 18 (Psat) 12 3x3 QFN XM1001-BD IR Mixer 8 (Loss) 25 (IIP3) Bare Die XR1019-QH Receiver (IIP3) 4x4 QFN Broadband Amplfiers Gain Noise Figure Output P1dB Output IP3 Frequency Part Number (db) (db) (dbm) (dbm) Package 30 khz - 40 GHz XD Bare Die GHz XD Bare Die GHz XB Bare Die/-QT Detailed specifications for our standard parts can be found quickly on our website at by typing the part number into the search box. All specifications are subject to change.

13 mm Wave and Electronic Warfare High Performance AlGaAs PIN Diode Switches Extreme Bandwidth M/A-COM Technology Solutions AlGaAs-based diodes provide ultra broadband performance from 50 MHz to 50 GHz with functional performance to 70 GHz. Offering an array of standard products as well as custom solutions, AlGaAs diode switches are ideally suited for demanding millimeter wave and broadband applications. The high electron mobility of AlGaAs coupled with the low capacitance of the PIN diode makes this switch technology ideal for fast switching, high frequency, multi-throw switch designs. Common uses include switching arrays for radar systems, radiometers, EW receivers, and other multi-assembly components. M/A-COM Tech uses high volume, dual use processes to create compelling products for aerospace and defense applications: Si bipolar and LDMOS power transistors Si, GaAs and AlGaAs diodes GaAs MESFET and phemt based MMICs Hybrid components both passive and active Hermetic and printed circuit board-based modules and assemblies Tactical Missile Defense Radar Our extensive design experience coupled with our semiconductor processing, assembly and automated test capability makes us uniquely qualified to address the most demanding aerospace and defense specifications. For more details, contact your M/A-COM Tech sales office or visit Switches Frequency Insertion Loss Isolation Input IP3 (MHz) Part Number Type (db) (db) (dbm) Package 50-70,000 MA4AGSW1 SPST Die 50-70,000 MA4AGSW1A SPST Die 50-70,000 MA4AGSW2 SPDT Die 50-70,000 MA4AGSW3 SP3T Die 50-70,000 MA4AGSW4 SP4T Die 50-70,000 MA4AGSW5 SP5T Die 50-70,000 MA4AGSW8 SP8T Die Detailed specifications for our standard parts can be found quickly on our website at by typing the part number into the search box. All specifications are subject to change.

14 Radar Products High Power GaN Transistors Next generation high power semiconductor technology Power Amplifier Line-Ups: and GHz 30 W 30 W 100 W 2X 180 W Device 340 W 22 db gain 275 W 20 db gain 2X 150 W Device 4X 180 W Device 625 W 22 db gain 100 W 525 W 20 db gain 4X 150 W Device M/A-COM Technology Solutions recently introduced Gallium Nitride (GaN) RF power transistors. Our initial product offering targets S-band pulsed applications and leverages M/A-COM Tech's 60-year heritage of providing both standard and custom solutions to meet the most demanding customer needs. Our GaN on Silicon Carbide (SiC) products, offered as transistors and pallets, utilize a 0.5 micron HEMT process and exhibit excellent RF performance with respect to power, gain, gain flatness, efficiency and ruggedness over wide operating bandwidths. Additional products that target applications such as L-band radar, avionics, EW, and MILCOM, as well as general purpose devices, will be released in Why choose GaN? GaN RF power devices combine the best properties of two technologies: high power handling and high-voltage operation of silicon LDMOS devices, with the high-frequency performance of GaAs. GaN also offers improved linearity and efficiency performance when compared to Si LDMOS. Other advantages include: High breakdown voltage Easy to broadband Superior power density High frequency operation High RF gain and efficiency Excellent thermal conductivity properties For more details, contact your M/A-COM Tech sales office or visit 8X 180 W Device GaN Transistors 30 W 180 W 30 W 150 W 8X 150 W Device 1200 W 32 db gain 1000 W 30 db gain Frequency Pulse / Duty Pout Gain Efficiency (GHz) Part Number (µs / %) (W) (db) (%) MAGX L / MAGX L / MAGX L / MAGX L00 50 / MAGX L / MAGX L / MAGX L /

15 Radar Products High Power Bipolar RF Transistors and Pallets M/A-COM Technology Solutions offers a broad range of RF power transistor products discrete devices and pallets from 1 MHz to 3.5 GHz. Our use of gold metallization results in the high reliability required for demanding radar applications. More than 40 years of experience and field tested performance in support of pulsed power applications make M/A-COM Tech the ideal partner in solving your critical RF power challenges. Our engineers have in-depth knowledge of the critical requirements of radar systems and support solutions with both standard and custom products. M/A-COM Tech offers complete transistor line-ups for both L- and S-band radar applications. The final high power stages can be implemented by the customer as discrete transistors or through the implementation of M/A-COM Tech integrated pallets. Discrete Transistor: L-Band Line-up For more details, contact your M/A-COM Tech sales office or visit PH1214-8M PH M PH1214-2M MAPRST0002 Watts 150µs, % PH M Part Freq Vcc Pout Gain Number (GHz) (V) (W) (db) PH1214-2M PH1214-8M MAPRST PH M Discrete Transistor: S-Band Line-up PH M Pulsed and CW high power RF transistors for radar applications worldwide PH2731-5M MAPR M00 PHA M Watts 100µs, % Part Freq Vcc Pout Gain Number (GHz) (V) (W) (db) PH2731-5M PH M MAPR M PHA M

16 Radar Products Front view of MPAR LRU displaying the radiating elements Back view of MPAR LRU displaying the active electronics PCB-based T/R module Multifunction transmit IC for S-band radar containing multiple gain stages, two 6-bit phase shifters and two 4-bit constant phase digital attenuators Affordable Aerospace and Defense Solutions Applying commercial manufacturing processes for high performance aerospace and defense applications Phased array apertures have become the technology of choice for many defense radar, communications and electronic warfare applications. This technology is used in systems as diverse as ship-to-ship communications, UAV data links, high power volume search radar, and wideband electronic warfare systems. These systems, while displaying very high performance, also can be very costly... until now. Cost growth of phased array systems is limiting the deployment of the technology for defense applications while making it virtually impossible to realize commercial systems. M/A-COM Technology Solutions is actively applying commercial manufacturing practices to create high performance, affordable phased array building blocks. There is a stark contrast between the worlds of defense and commercial manufacturing. In the commercial world, the mantra is speed to market and cost. To be a viable supplier, it is presumed that you will meet specification. Commonly, in the defense world, technology maturation programs are often implemented after the technology has failed to deliver resulting in years of program delays with concomitant cost growth. M/A-COM Tech s work on the MPAR (Multifunction Phased Array Radar) program is an excellent example of the application of commercial manufacturing practices to a technically demanding radar application. In addition to the technical demands, implementation of MPAR requires an order of magnitude or more reduction in cost as compared to previous defense phased array systems. To achieve these goals, M/A-COM Tech has: Designed and manufactured highly integrated MMICs to minimize the total part count and simplify manufacturing at the next level of assembly Packaged all MMICs in industry standard surface mount plastic packages Designed and manufactured printed circuit board (PCB) transmit/receive (T/R) modules to facilitate automated assembly and test Designed and manufactured PCB-based line replaceable unit (LRU) which forms the fundamental RF building block for the radar system MPAR is a dual polarization S-band system. Similar approaches can be taken at other frequencies. We have applied similar methodologies to: Highly Integrated MMICs Plastic packaging PCB-based T/R modules and higher level assembles C, X, and Ku bands For more details, contact your M/A-COM Tech sales office or visit

17 Radar Products COTS Components for Phased Array Applications M/A-COM Technology Solutions offers a comprehensive portfolio of Commercial Off-The-Shelf (COTS) components for phased array or active electronically scanned array (AESA) applications such as radar and data links. Our comprehensive product portfolio addresses major functions of the block diagram. Realized in M/A-COM Tech s proprietary GaAs MMIC, diode and hybrid technologies high performance, cost-effective solutions can be achieved. COTS building blocks can be customized to create unique, highly integrated T/R circuits. For more details, contact your M/A-COM Tech sales office or visit to/from Antenna Array TTL Threshold Detector Final Power Amp SPDT Switch Limiter Attenuator LNA Driver Amp Pre-driver Amp Digital Phase Shifter Phase Shifter 6 bit Digital Attenuator Tx Rx BITE I/P Receiver Protector 6 bit 6 bit T/R Switch L-Band S-Band C-Band X-Band Ku-Band MASW MASW MASW MASW Limiter MA4L-Series Attenuator MAAD MAAD Phase Shifter MAPS MAPS MAPS MAPS MAPS MAPS MAPS MAPS Low Noise Amplifier MAAM3700 MAAM71200 Driver Amplifier High Power Amplifier MAAM MAAM26100 MAAM71100 XP1043 XP1044 XP1035 MAAP MAAP XP1039 MAAP CMOS Controller MADR In Production CY2011 Release Future Development

18 T/R Switches Frequency Isolation Insertion Input IP3 (MHz) Part Number Type (db) Loss (db) (dbm) Package MASW SPDT mm PQFN MASW SPDT mm PQFN MASW SPDT mm PQFN MASW SPDT Die Limiter Diodes Incident Peak Power Incident Peak Power Incident Peak Power Recovery Time Maximum Maximum for 1 db Limiting for 10 db limiting for 15 db Limiting (3 Incident CW Input Frequency Part GHz 50 W Peak Power Peak Power Power (GHz) (dbm) (dbm) (dbm) (ns) (W) (W) DC to 20 MA4L DC to 20 MA4L DC to 20 MA4L DC to 20 MA4L DC to 20 MA4L DC to 20 MA4L DC to 20 MA4L DC to 20 MADL W DC to 20 MA4L Low Noise Amplifiers Frequency Gain Noise Figure Output P1dB Output IP3 (GHz) Part Number (db) (db) (dbm) (dbm) MAAM MAAM XL Driver Amplifiers Frequency Gain P1dB Psat (GHz) Part Number (db) (dbm) (dbm) MAAM MAAM MAAM XP XP High Power Amplifiers Frequency Gain P1dB Psat (GHz) Part Number (db) (dbm) (dbm) XP XP Detailed specifications for our standard parts can be found quickly on our website at by typing the part number into the search box. All specifications are subject to change.

19 PktFldr_001 Page PktFldr:Layout 1 3/10/11 10-MAR-11 8:24 AM Page 1 M/A-COM Technology Solutions Military Communications M/A-COM Technology Solutions Aerospace and Defense mm Wave and EW A Spectrum of Aerospace and Defense Solutions Discrete Components, MMICs and Integrated Modules Radar Solutions for Challenging Military Communications Applications High Power MELF PIN Diodes High Performance Surface Mount VCOs UHF and VHF High Power Transistors and Modules RF and Microwave Broadband Components (COTS) High Frequency and Ultra Broadband Solutions High Performance AlGaAs PIN Diode Switches Phased Array Radar Electronic Warfare High Power GaN Transistors High Power Bipolar RF Transistors and Pallets Affordable Aerospace and Defense Solutions COTS Components for Phased Array Applications U.S. Army photo by Martin Greeson Communications The Counter Remotely-Controlled IED Electronic Warfare system, or CREW Duke system Photo courtesy of U.S. Army Avionics MILCOM North America India China (Shanghai) MTS-L Cyan Magenta Yellow Black Die The Signature Group