CMOS linear image sensor

Size: px
Start display at page:

Download "CMOS linear image sensor"

Transcription

1 High-speed readout (00 klines/s) The is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. The columnparallel readout system, which has a readout amplifier and an A/D converter for each pixel, allows high-speed readout. For the A/D converter resolution, either 0-bit (high-speed mode: 00 klines/s max.) or 2-bit (low-speed mode: 25 klines/s max.) can be selected. Video signal is output serially in 0 MHz LVDS format. Features Applications Pixel size: 7 7 µm Number of pixels: 4096 High-speed readout: 00 klines/s Simultaneous integration of all pixels power supply operation SPI communication function Built-in 0-bit/2-bit A/D converters Machine vision Film inspection Printed circuit board appearance inspection Print inspection Structure Parameter Specification Unit Number of pixels Pixel pitch 7 µm Pixel height 7 µm Effective photosensitive area length mm Package Ceramic - Window material* Borosilicate glass - *: AR coated (% or less reflectance at 400 to 00 nm) Absolute maximum ratings (Ta=25 C) Parameter Symbol Condition Value Unit Analog terminal Vdd(A) -0.3 to +3.9 V Supply voltage Digital terminal Vdd(D) -0.3 to +3.9 V Counter terminal Vdd(C) -0.3 to +3.9 V Digital input signal terminal voltage* 2 Vi -0.3 to +3.9 V Vref_cp terminal voltage Vref_cp -0.3 to +6.5 V Vref_cp2 terminal voltage Vref_cp2-2.0 to +0.3 V Operating temperature Topr No dew condensation* 3-5 to +70 C Storage temperature Tstg No dew condensation* 3-0 to +70 C *2: CS, SCLK, MOSI, RSTB, MCLK, MST, All-reset, Pll-reset *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

2 Recommended operating conditions (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Analog terminal Vdd(A) Supply voltage Digital terminal Vdd(D) V Counter terminal Vdd(C) Digital input voltage High level Vi(H) 3 Vdd(D) Vdd(D) V Low level Vi(L) Electrical characteristics Digital input signal [Ta=25 C, Vdd(A)=Vdd(D)=Vdd(C)=, unless otherwise noted] Parameter Symbol Min. Typ. Max. Unit Master clock pulse frequency f(mclk) MHz Master clock pulse duty cycle D(MCLK) % Master start pulse High-speed mode 300/f(MCLK) - - interval* 4 tpi(mst) Low-speed mode 200/f(MCLK) - - s Master start pulse High-speed mode 66/f(MCLK) - - High period* 4 thp(mst) Low-speed mode 664/f(MCLK) - - s Master start pulse High-speed mode 2/f(MCLK) - - Low period* 4 tlp(mst) Low-speed mode /f(mclk) - - s Master clock - Master start delay time tcsd ns Master clock - Reset delay time tcrd ns Rise time* 5 tr(sigi) ns Fall time* 5 tf(sigi) ns *4: The maximum line rate is 00 klines/s in high-speed mode. Line rate is 00 klines/s when tpi(mst) = 300/f(MCLK). The maximum line rate is 25 klines/s in low-speed mode. Line rate is 25 klines/s when tpi(mst) = 200/f(MCLK). *5: Time for the input voltage to rise or fall between 0% and 90% MCLK and MST input timings tr(sigi) tf(sigi) MCLK MST tcsd tr(sigi) tr(sigi) thp(mst) tpi(mst) tf(sigi) tlp(mst) KMPDC0677EA 2

3 PLL_Reset, All_Reset input timing After 00 µs of turning on the power, set PLL_Reset to low level for at least 5 master clock cycles and then do the same for All_Reset. Vdd(A) Vdd(D) Vdd(C) Rise time of power supply voltage >00 µs MCLK tcrd tcrd >5 clk PLL_Reset >5 clk All_Reset KMPDC0663EA Digital output signal [Ta=25 C, Vdd(A)=Vdd(D)=Vdd(C)=, f(mclk)=30 MHz, unless otherwise noted] Parameter Symbol Min. Typ. Max. Unit Video data rate (LVDS) DR f(mclk) 6 MHz Line rate High-speed mode LR Low-speed mode klines/s LVDS output voltage* Offset Vcom Differential Vdiff V LVDS rise time* 7 tr(lvds) ns LVDS fall time* 7 tf(lvds) ns Pclk OutX[m] period tpdd ns Pclk CTR period tpdc ns Pclk Sync period Rise time tpdsr ns Fall time tpdsf CMOS output voltage High Vsigo(H) Vdd(D)-0.25 Vdd(D) - Low Vsigo(L) V Clock pulse frequency High-speed mode - f(mclk) - f(tgclk) of timing generator Low-speed mode - f(mclk)/4 - MHz CMOS output rise time* tr(sigo) ns CMOS output fall time* tf(sigo) ns *6: Attach a 00 Ω terminator to the LVDS output terminal. *7: Time for the output voltage to rise or fall between 0% and 90% when there is a 2 pf load capacitor attached to the output terminal *: Time for the output voltage to rise or fall between 0% and 90% when there is a 0 pf load capacitor attached to the output terminal LVDS output voltage, rise and fall time Out_Xp[m] Out_Xn[m] Vcom Vdiff tr(lvds) tf(lvds) KMPDC065EA 3

4 Output timing of video output and Sync signal pclk Out_X [m] Sync tpdd tpdsf tpdsr CTR tpdc KMPDC0659EA Out_X[m] is video output. X: A to P (port), m: 0=lower bit, =higher bit Video output should be acquired at the rising timing of pclk. Video output starts after the rising of Sync. Sync can be used as reference of data acquisition [refer to Timing chart (P.)]. On the rising edge of CTR, the lower bits are output from D0 and the higher bits from D6. CTR can be used as reference of data acquisition [refer to Timing chart (P.9)]. Current consumption [Ta=25 C, Vdd(A)=Vdd(D)=Vdd(C)=, f(mclk)=30 MHz, LR=00 klines/s, unless otherwise noted] Parameter Symbol Min. Typ. Max. Unit Vdd A) terminal* 9 Ic Vdd(D) terminal* 9 Ic ma Vdd(C) terminal* 9 Ic *9: Apply saturation exposure light. Electrical characteristics of A/D converter [Ta=25 C, Vdd(A)=Vdd(D)=Vdd(C)=, f(mclk)=30 MHz, unless otherwise noted] Parameter Symbol Specification Unit High-speed mode 0* Resolution RESO 0 bit Low-speed mode 2 Conversion voltage range - 0 to.3 V *0: Equivalent to 0-bit. From offset output to saturated output is approximately 024 DN. 4

5 Electrical and optical characteristics [Ta=25 C, Vdd(A)=Vdd(D)=Vdd(C)=, f(mclk)=30 MHz, gain: default value, offset: default value, tpi(mst)=0 µs (high-speed mode), 40 µs (low-speed mode), unless otherwise noted] Common to all modes Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 000 nm Peak sensitivity wavelength λp nm Gain= - ±5 ±0 Photoresponse nonuniformity* PRNU Gain= - ±5 ±0 % Image lag* 2 Lag % Saturation charge Qsat ke- SNR max. Gain= Gain= db *: The output uniformity when a uniform light with a light exposure that is approximately 50% of saturation output is applied. It is defined as follows for the 4090 pixels excluding the 3 pixels at each end of the sensor. PRNU = (ΔX/X) 00 [%] *2: The signal component of the previous data that remains after data is read out under saturation output conditions. Image lag increases if light greater than the saturation exposure is incident. High-speed mode Parameter Symbol Gain Min. Typ. Max. Unit - 3 mv DN Offset variation* 3 VSNU mv DN mv DN Dark output* 4 VD mv DN V/(lx s) Photosensitivity* 5-36k - DN/(lx s) Sw V/(lx s) - 290k - DN/(lx s) µv/e mdn/e- Conversion efficiency CE µv/e mdn/e V Saturation output Vsat DN mv-rms DN-rms Readout noise* 6 Nread mv-rms DN-rms Dynamic range* 7 Drange

6 Low-speed mode Parameter Symbol Gain Min. Typ. Max. Unit - 3 mv DN Offset variation* 3 VSNU mv DN mv DN Dark output* 4 VD mv DN V/(lx s) - 40k - DN/(lx s) Photosensitivity* 5 Sw V/(lx s) - 200k - DN/(lx s) µv/e mdn/e- Conversion efficiency CE µv/e mdn/e V Saturation output Vsat DN mv-rms DN-rms Readout noise* 6 Nread mv-rms DN-rms Dynamic range* 7 Drange *3: Measured in the dark state. Difference between the maximum and minimum. *4: Ts=0 ms, voltage difference from the offset output level *5: 256 K, tungsten lamp *6: Dark state *7: Vsat/Nread Note: DN (digital number): unit of A/D converter output Spectral response (typical example) (Ta=25 C) Spectral transmittance characteristics of window material (Typ. Ta=25 C) Photosensitivity (A/W) Transmittance (%) Wavelength (nm) KMPDB0493EA Wavelength (nm) KMPDB0494EA 6

7 Block diagram The video output signal is divided and output through 6 ports (A through P). Each port outputs 256 pixels of data (pixel numbers output from each port: A= to 256, B=257 to 52,... P=34 to 4096). KMPDC0637EA Enlarged view of video output (full output mode) Output for each port divides data into LVDS (lower bits and higher bits) pairs. Port A to 256 pixels Port B 257 to 52 pixels Port P 34 to 4096 pixels 6-bit 6-bit 6-bit 6-bit 6-bit 6-bit Serializer A Serializer A Serializer B Serializer B Serializer P Serializer P Lower bit Higher bit Lower bit Higher bit Lower bit Higher bit KMPDC075EA 7

8 Timing chart Description of operation The integration time is determined by the low period of the start pulse. ST ➀ ➁ ➂ Integration time Integration time Integration time Video output (Port A) Video output (Port B) Video data Video data ( to 256 pixels) ( to 256 pixels) Video data Video data (257 to 52 pixels) (257 to 52 pixels) KMPDC076EA () The start of integration time is determined by the falling edge of the start pulse. (2) The end of integration time is determined by the rising edge of the start pulse. (3) Video data is output after the rising edge of the next start pulse cycle. Video data is output in order from the first pixel. (256 pixels of data are output for each port.) * Signal integration is possible even during video output TGCLK n-th frame integration time ST thp(mst) tlp(mst) 35 clocks tpi(mst) Sync Out_A [0] Out_A [] Out_P [0] Out_P [] 3 clocks Invalid data Valid data Invalid data Valid data Invalid data Valid data Invalid data Invalid data Valid data Invalid data Valid data Invalid data Valid data Invalid data Invalid data Valid data Invalid data Valid data Invalid data Valid data Invalid data Invalid data Valid data Invalid data Valid data Invalid data Valid data Invalid data (n-2)-th frame data 256 pixels (n-)-th frame data 256 pixels n-th frame data 256 pixels CS KMPDC0660EA Line rate equals the reciprocal of start pulse interval. TGCLK is a timing generator clock inside the sensor. TGCLK is the same frequency as that of MCLK in high-speed mode, and the /4 in low-speed mode. The integration time equals the low period of start pulse plus 06 clock cycles of TGCLK. SPI set within 3 TGCLK clocks after the rising edge of the start pulse is updated starting from the nth frame data. In /4 output mode, only the following outputs are valid. Out_A[0], Out_C[0], Out_E[0], Out_G[0], Out_I[0], Out_K[0], Out_M[0] and Out_O[0]

9 ex.: Port A, B Full output mode PCLK Sync CTR Out_A[0] D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D5 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 Out_A[] D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 Out_B[0] D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 D5 D0 D D2 D3 D4 Out_B[] D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 D D6 D7 D D9 D0 Invalid data st pixel data 2nd pixel data 3rd pixel data KMPDC066EA /4 output mode PCLK Sync CTR Out_A[0] 4 cycles D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D D0 D D2 D3 D4 D5 D6 D7 D D9 D0 D Invalid data Port A st pixel data Port B st pixel data Port A 2nd pixel data Port B 2nd pixel data KMPDC0662EA Operation example Example Line rate = 00 kline/s, master clock pulse frequency = 30 MHz, high-speed mode, full output mode, integration time max. MST pulse cycle: 0 µs Integration time: µs MST.7 µs Sync.53 µs Video output 256 KMPDC069EA Master start pulse cycle = 300/f(MCLK) = 0 µs (equals the reciprocal of start pulse interval.) Master start pulse s low period = Master start pulse cycle Master start pulse s High period min. = 300/f(MCLK) - 66/f(MCLK) = 300/30 MHz - 66/30 MHz = 34/30 MHz = 4.47 µs Integration time = master start pulse low period + 06 cycles of master clock pulses = ( )/30MHz = µs Sync rises about.7 µs after the rising edge of the master start pulse. Then the video output signal is output in order from the first pixel (256 pixels is output from each port). 9

10 Example 2: Line rate = 25kline/s, master clock pulse frequency = 30MHz, low-speed mode, /4 output mode, integration time max. MST pulse cycle: 40 µs Integration time: 32 µs MST 4.67 µs Sync 34.3 µs Video output 256 KMPDC0692EA Master start pulse cycle = 200/f(MCLK) = 40 µs (equals the reciprocal of start pulse interval.) Master start pulse s low period = Master start pulse cycle Master start pulse s High period min. = 200/f(MCLK) - 664/f(MCLK) = 200/30 MHz - 664/30 MHz = 536/30 MHz = 7.7 µs Integration time = master start pulse low period cycles of master clock pulses = ( )/30 MHz = 32 µs Sync rises approximately 4.67 µs after the rising edge of the master start pulse. Then the video output signal is output in order from the first pixel (256 pixels is output from each port). 0

11 SPI address setting Address (Decimal) Register Default value Binary Decimal Setting 0 Mode[:0] Mode[0] high-speed/low-speed mode (default: high-speed mode) Mode[] number of video output terminal (default: full output mode) 9 pclk_delay[5:0] pclk timing (default: pclk-delay [5:0]=0) 20 AGC[4:0] Gain (default: gain=) 2 Offset[:] Offset[7:0] Output offset (default: 3) Note) Always set the addresses shown in the above table. The image sensor may malfunction if any other address is set. High-speed/low-speed mode Maximum line rate is selectable from following 2 modes: It is set to High-speed mode when Mode[0] is 0 (Low), Low-speed mode when Mode[0] is (High). High-speed mode (Mode[0]=0): Maximum line rate = 00 klines/s, A/D converter resolution = 0-bit (From offset output to saturation output is approximately 024 DN.) Low-speed mode (Mode[0]=): Maximum line rate = 25 klines/s, A/D converter resolution = 2-bit Number of video output terminal The number of video output terminal is selectable from following 2 modes: Full output mode (Mode[]=0): Video output=64 terminals (32 LVDS pairs) /4 output mode (Mode[]=): Video output=6 terminals ( LVDS pairs) * To make the line rate faster than 25 klines/s, do not use /4 output mode. Note) Refer to [timing chart (P.9)] in detail. pclk timing The pclk output timing can be delayed inside the sensor. Set pclk_delay[5:0] between 0 and 63. When pclk_delay[5:0] is increased by, the pclk output is delayed by approximately 0.5 ns. Gain setting The sensor may not operate properly if a setting not in the following table is specified. Specify a setting shown in the table. AGC[4:0] Decimal Binary Gain Description [4] [3] [2] [] [0] Default setting

12 Output offset setting Set Offset[:0] between 0 and 023. When Offset[:0] is increased by, the offset value increases by DN. Due to the variations in each chip, the actual offset value will be slightly off from the specified value. Set offset[:0] to 0. SPI setting Set the SPI using SCLK, CS, and MOSI. Setting RSTB to low level resets all parameters. SCLK CS tset(cs) thold(cs) MOSI A6 A5 A0 W D7 D6 D0 MISO tset(mo) thold(mo) KMPDC0693EA (Ta=25 C, Vdd(A)=Vdd(D)=, f(mclk)=30 MHz, LR=00 klines/s, unless otherwise noted) Item Symbol Min. Typ. Max. Unit SPI clock pulse frequency f(sclk) MHz SPI setup time (CS) tset(cs) ns SPI hold time (CS) thold(cs) ns SPI setup time (MOSI) tset(mo) ns SPI hold time (MOSI) thold(mo) ns Digital input signal rise time* tr(sigi) ns Digital input signal fall time* tf(sigi) ns *: The time for input voltage to rise or fall between 0% and 90% Example of SPI setting Writing AGC [4:0]= (setting gain to 2 times) SCLK CS MOSI A6 A5 A4 A3 A2 A A0 W D7 D6 D5 D4 D3 D2 D D0 MISO KMPDC0694EA 2

13 Checking the SPI setting You can check the current SPI setting in the following manner. SCLK CS MOSI A6 A5 A0 R MISO D7 D6 D0 tsmd tr(sigo), tf(sigo) KMPDC0695EA (Ta=25 C, Vdd(A)=Vdd(D)=, f(mclk)=30 MHz, LR=00 klines/s, unless otherwise noted) Item Symbol Min. Typ. Max. Unit Output signal rise time* 9 tr(sigo) ns Output signal fall time* 9 tf(sigo) ns SCLK-MISO delay time tsmd ns *9: Time for the output voltage to rise or fall between 0% and 90% when the load capacitance of the output terminal is 0 pf Example of checking the SPI setting Confirms AGC [4:0]= (gain=2 times) SCLK CS MOSI A6 A5 A4 A3 A2 A A0 r MISO D7 D6 D5 D4 D3 D2 D D0 KMPDC0696EA 3

14 Dimensional outline (unit: mm) 4.45 ± 0.05* ± 0.2 Photosensitive area.46 ± 0.05* Window.40 ± 0.2* 3.35 ± 0.2* 4.60 ± 0.2* st pixel 6.50 ± Index mark 0.50* 6 ϕ.20 Direction of scan Photosensitive surface 3.00 (0.) (0.2) (3.0) 4.00 Index mark ± 0.27 A B C D E F G H I J K Tolerance unless otherwise noted: ±0.2 *: Distance from package edge to photosensitive area center *2: Distance from package edge to photosensitive area edge *3: Distance from package bottom to photosensitive area *4: Distance from glass surface to photosensitive surface *5: Distance from package top to photosensitive surface *6: Glass thickness ± 0.27 KMPDA0572EA 4

15 Pin connections Pin no. Symbol Function I/O A2 Out_An[0] Video output signal O A4 Out_An[] Video output signal O A6 Out_Cn[0] Video output signal O A Out_Cn[] Video output signal O A0 Out_En[0] Video output signal O A2 Out_En[] Video output signal O A4 Out_Gn[0] Video output signal O A6 Out_Gn[] Video output signal O A Out_In[0] Video output signal O A20 Out_In[] Video output signal O A22 Out_Kn[0] Video output signal O A24 Out_Kn[] Video output signal O A26 Out_Mn[0] Video output signal O A2 Out_Mn[] Video output signal O A30 Out_On[0] Video output signal O B Out_Ap[0] Video output signal O B3 Out_Ap[] Video output signal O B5 Out_Cp[0] Video output signal O B7 Out_Cp[] Video output signal O B9 Out_Ep[0] Video output signal O B Out_Ep[] Video output signal O B3 Out_Gp[0] Video output signal O B5 Out_Gp[] Video output signal O B7 Out_Ip[0] Video output signal O B9 Out_Ip[] Video output signal O B2 Out_Kp[0] Video output signal O B23 Out_Kp[] Video output signal O B25 Out_Mp[0] Video output signal O B27 Out_Mp[] Video output signal O B29 Out_Op[0] Video output signal O B3 Out_Op[] Video output signal O C2 Vdd(D) Supply voltage () I C4 Ground - C6 PCLKn Bit output sync signal O C CTRn Pixel sync signal O C0 NC No connection - C2 NC No connection - C4 NC No connection - C6 NC No connection - C NC No connection - C20 NC No connection - C22 NC No connection - C24 NC No connection - C26 Syncn Frame sync signal O C2 MCLK Master clock signal I C30 Out_On[] Video output signal O D Vdd(D) Supply voltage () I D3 Ground - D5 PCLKp Bit output sync signal O D7 CTRp Pixel sync signal O D9 Vref_cp Bias voltage for charge pump circuit (5.5 V)* 20 O D Vref_cp2 Bias voltage for charge pump circuit (-.5 V)* 20 O D3 Vref Bias voltage* 20 O D5 Vref2 Bias voltage* 20 O D7 Vref3 Bias voltage* 20 O D9 Vref4 Bias voltage* 20 O D2 Vref5 Bias voltage* 20 O *20: Insert a µf capacitor between each terminal and. Note: Leave NC pins open; do not connect to. Pin no. Symbol Function I/O D23 Vref6 Bias voltage* 20 O D25 Syncp Frame sync signal O D27 MST Master start signal I D29 (C) Ground - D3 Vdd(C) Supply voltage () I E2 Vdd(D) Supply voltage () I E4 Ground - E6 Pll_Reset Pll circuit reset I E CS SPI selection signal I E24 NC No connection - E26 All_Reset Timing generator reset I E2 (C) Ground - E30 Vdd(C) Supply voltage () I F Vdd(D) Supply voltage () I F3 Ground - F5 SCLK SPI clock signal I F7 MOSI SPI input signal I F9 RSTB SPI reset signal I F23 NC No connection - F25 NC No connection - F27 NC No connection - F29 (C) Ground - F3 Vdd(C) Supply voltage () I G2 Vdd(D) Supply voltage () I G4 Ground - G6 MISO SPI output signal O G TGCLK Timing generator clock signal O G24 NC No connection - G26 NC No connection - G2 (C) Ground - G30 Vdd(C) Supply voltage () I H Vdd(D) Supply voltage () I H3 Ground - H5 NC No connection - H7 NC No connection - H9 Vref7 Bias voltage* 20 O H Vref Bias voltage* 20 O H3 Vref9 Bias voltage* 20 O H5 Vref0 Bias voltage* 20 O H7 Vref Bias voltage* 20 O H9 Vref2 Bias voltage* 20 O H2 Vref3 Bias voltage* 20 O H23 Vref4 Bias voltage* 20 O H25 NC No connection - H27 NC No connection - H29 (C) Ground - H3 Vdd(C) Supply voltage () I I2 Vdd(D) Supply voltage () I I4 Ground - I6 NC No connection - I NC No connection - I0 Vdd(A) Supply voltage () I I2 Ground - I4 Vdd(A) Supply voltage () I I6 Ground - I Vdd(A) Supply voltage () I I20 Ground - 5

16 Pin no. Symbol Function I/O I22 Vdd(A) Supply voltage () I I24 Ground - I26 NC No connection - I2 NC No connection - I30 Out_Pn[] Video output signal O J Out_Bp[0] Video output signal O J3 Out_Bp[] Video output signal O J5 Out_Dp[0] Video output signal O J7 Out_Dp[] Video output signal O J9 Out_Fp[0] Video output signal O J Out_Fp[] Video output signal O J3 Out_Hp[0] Video output signal O J5 Out_Hp[] Video output signal O J7 Out_Jp[0] Video output signal O J9 Out_Jp[] Video output signal O J2 Out_Lp[0] Video output signal O J23 Out_Lp[] Video output signal O J25 Out_Np[0] Video output signal O Note: The video output symbol is defined as follows: Out_An[0] [0]: lower (0 to 5) bits, []: higher (6 to ) bits p: positive input of the differential pair, n: negative input of the differential pair A to P: output ports Pin no. Symbol Function I/O J27 Out_Np[] Video output signal O J29 Out_Pp[0] Video output signal O J3 Out_Pp[] Video output signal O K2 Out_Bn[0] Video output signal O K4 Out_Bn[] Video output signal O K6 Out_Dn[0] Video output signal O K Out_Dn[] Video output signal O K0 Out_Fn[0] Video output signal O K2 Out_Fn[] Video output signal O K4 Out_Hn[0] Video output signal O K6 Out_Hn[] Video output signal O K Out_Jn[0] Video output signal O K20 Out_Jn[] Video output signal O K22 Out_Ln[0] Video output signal O K24 Out_Ln[] Video output signal O K26 Out_Nn[0] Video output signal O K2 Out_Nn[] Video output signal O K30 Out_Pn[0] Video output signal O Precautions () Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or stain adheres to the surface of the light input window glass, it will appear as black spots on the image. When cleaning, avoid rubbing the window surface with dry cloth, dry cotton swab or the like, since doing so may generate static electricity. Use soft cloth, paper, a cotton swab, or the like moistened with alcohol to wipe off dust and stain. Then blow compressed air so that no stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 C. (4) Operating and storage environments Handle the device within the temperature range of the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV light irradiation Because this product is not designed to resist characteristic deterioration under UV light irradiation, do not apply UV light irradiation to it. (6) Fixing the product in place When using screws to fix the product in place, use M2 screws. Set the tightening torque to 0.0 N m or less. 6

17 Connection circuit example µf µf µf µf µf 0. µf 0. µf 0. µf 0. µf 0. µf Vdd(C) Vdd(C) Vdd(C) Vdd(C) Vdd(C) Vref_cp µf Vref_cp2 µf Vref µf Vref2 µf Vref3 µf Vref4 µf Vref5 µf Vref6 µf Vref7 µf Vref µf Vref9 µf Vref0 µf Vref µf Vref2 µf Vref3 µf Vref4 µf Vdd(A) Vdd(A) Vdd(A) Vdd(A) Vdd(D) Vdd(D) Vdd(D) Out_Xp[m] Out_Xn[m] PCLKp PCLKn CTRp CTRn Syncp Syncn MCLK MST Pll_Reset All_Reset CS SCLK MOSI RSTB MISO TGCLK Vdd(D) Vdd(D) Vdd(D) Vdd(D) Digital buffer 00 Ω 00 Ω 00 Ω 00 Ω µf µf Digital buffer Connect and (C) with a single point. KMPDC063EA 7

18 Related information Precautions Disclaimer Image sensors Information described in this material is current as of July 20. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division 26- Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: () , Fax: () U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 007, U.S.A., Telephone: () , Fax: () , Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 0, D-22 Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) , France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 92 Massy Cedex, France, Telephone: 33-() , Fax: 33-() , infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 0 Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) , Fax: (44) , info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) , info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) , info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B20, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 00020, China, Telephone: (6) , Fax: (6) , hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: F-3, No. 5, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (6) , Fax: (6) , info@hamamatsu.com.tw Cat. No. KMPD4E02 Jul. 20 DN

CMOS linear image sensor

CMOS linear image sensor S3774 High-speed readout (00 klines/s) The S3774 is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. The columnparallel readout system, which has a readout

More information

CMOS linear image sensors

CMOS linear image sensors CMOS linear image sensors S12198 series (-01) Smoothly varying spectral response characteristics in UV region The S12198 series are CMOS linear image sensors using a vertically long pixels (25 500 µm).

More information

CMOS linear image sensor

CMOS linear image sensor RGB color image sensor The is a CMOS linear image sensor that is sensitive to red (630 nm), green (540 nm), and blue (460 nm). Filters are attached to the pixels in the following order: R, G, and B. Features

More information

CMOS linear image sensor

CMOS linear image sensor Achieves high sensitivity by adding an amplifier to each pixel The is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area (effective

More information

CMOS linear image sensor

CMOS linear image sensor CMOS linear image sensor S11639-01 High sensitivity, photosensitive area with vertically long pixels The S11639-01 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically

More information

InGaAs PIN photodiodes

InGaAs PIN photodiodes area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm

More information

Compact SMD type high output LED

Compact SMD type high output LED Compact SMD type high output LED The is a small-size LED available in a surface mount COB package. Its size is drastically reduced compared to the previous premolded type. Features Applications High output

More information

InGaAs PIN photodiodes

InGaAs PIN photodiodes Long wavelength type (cutoff wavelength: 2.05 to 2.1 μm) Features Cutoff wavelength: 2.05 to 2.1 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response

More information

InGaAs PIN photodiodes

InGaAs PIN photodiodes Long wavelength type (cutoff wavelength: 2.55 to 2.6 μm) Features Cutoff wavelength: 2.55 to 2.6 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response

More information

High power LED, peak emission wavelength: 1.45 µm

High power LED, peak emission wavelength: 1.45 µm High power LED, peak emission wavelength:.45 µm The is a high-power LED that emits infrared light at a peak of.45 µm. A bullet-shaped package () and a surface mount type () are available. It offers high

More information

CMOS linear image sensors

CMOS linear image sensors CMOS linear image sensors S10121 to S10124 series (-01) Higher UV sensitivity than previous type, current-output type sensors with variable integration time function The S10121 to S10124 series are self-scanning

More information

InAs photovoltaic detectors

InAs photovoltaic detectors P9 series P763 Low noise, high reliability infrared detectors (for 3 µm band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors,

More information

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings

Photo IC diode. Wide operating temperature: -40 to +105 C.   S MT. Absolute maximum ratings Wide operating temperature: -40 to +05 C The photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by

More information

CMOS linear image sensors

CMOS linear image sensors Built-in electronic shutter function and gain switching function The is a CMOS linear image sensor with electronic shutter function and gain switching function. The has a pixel pitch that is one-half that

More information

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers Photodiode arrays with amplifiers S3885 series Photodiode arrays combined with signal processing IC for X-ray detection The S3885 series are photodiode arrays with amplifiers having a phosphor sheet attached

More information

Energy saving sensors for TV brightness controls, etc.

Energy saving sensors for TV brightness controls, etc. S7184 Linear current amplification of photodiode output The and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to 1300 times.

More information

InGaAs PIN photodiodes

InGaAs PIN photodiodes area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm

More information

InAs photovoltaic detectors

InAs photovoltaic detectors P9 series P763 Low noise, high reliability infrared detectors (for 3 μm band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors,

More information

Photodiode arrays with ampli er

Photodiode arrays with ampli er Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process

More information

01 12-bit digital output

01 12-bit digital output 12-bit digital output The is a digital color sensor sensitive to red (λ=615 nm), green (λ=540 nm) and blue (λ=465 nm) regions of the spectrum. Detected signals are serially output as 12-bit digital data.

More information

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers S865-64/-8/-56 S866-64-0/-8-0 Photodiode arrays combined with signal processing IC These are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS

More information

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers S865-64/-28/-256 S866-64-02/-28-02 Photodiode arrays combined with signal processing IC The S865/S866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been

More information

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers S865-64G/-8G/-56G S866-64G-0/-8G-0 Photodiode arrays combined with signal processing IC for X-ray detection These are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive

More information

Si photodiodes with preamp

Si photodiodes with preamp Si photodiodes with preamp Photodiode and preamp integrated with feedback resistance and capacitance The and are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance,

More information

Si photodiodes with preamp

Si photodiodes with preamp Si photodiodes with preamp Photodiode and preamp integrated with feedback resistance and capacitance The and are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance,

More information

MEMS-FPI spectrum sensor

MEMS-FPI spectrum sensor Ultra-compact near infrared spectrum sensor that integrates MEMS tunable filter and photosensor The MEMS-FPI spectrum sensor is a ultra-compact sensor that houses a MEMS-FPI (Fabry-Perot Interferometer)

More information

Photodiode arrays with amplifier

Photodiode arrays with amplifier /-28/-256 S8866-64-02/-28-02 Photodiode array combined with signal processing IC The /-28/-256 and S8866-64-02/-28-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing

More information

Radiation detection modules

Radiation detection modules C7 series High accuracy, high sensitivity, compact radiation detection module The C7 series is a radiation detection module containing a scintillator and MPPC (multi-pixel photon counter) designed to detect

More information

Applications S S S S 1024

Applications S S S S 1024 IMAGE SENSOR NMOS linear image sensor S9/S9 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed

More information

Photo IC diodes S SB S CT. Spectral response close to human eye sensitivity. Absolute maximum ratings (Ta=25 C)

Photo IC diodes S SB S CT. Spectral response close to human eye sensitivity.  Absolute maximum ratings (Ta=25 C) Photo IC diodes S9066-211SB S9067-201CT Spectral response close to human eye sensitivity The S9066-211SB, S9067-201CT photo ICs have spectral response close to human eye sensitivity. Two photosensitive

More information

5 W XENON FLASH LAMP MODULES

5 W XENON FLASH LAMP MODULES LAMP W XENON FLASH LAMP MODULES : L/L series (side-on type) : L/L series (head-on type) : L/L series (high output type) : L (SMA fiber adapter type) : L/L series (high precision type) : L/L series (silent

More information

CCD linear image sensor

CCD linear image sensor CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region

More information

Mini-spectrometers. TM series. High sensitivity type (integrated with backthinned type CCD image sensor) C10082CA/C10083CA series

Mini-spectrometers. TM series. High sensitivity type (integrated with backthinned type CCD image sensor)  C10082CA/C10083CA series C12CA/C13CA series High sensitivity type (integrated with backthinned type CCD ) mini-spectrometers are polychromators integrated with optical elements, an and a driver circuit. Light to be measured is

More information

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator) POWER LCOS-SLM CONTROLLER RESET POWER OUTPUT ERROR LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator) Control your light! Shape your beam! Improve your image! The devices are a reflective type

More information

CCD linear image sensor

CCD linear image sensor CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region

More information

XENON FLASH LAMP MODULES

XENON FLASH LAMP MODULES LAMP COMPACT W MODULES : L/L series (side-on type) : L/L series (head-on type) : L/L series (high output type) : L (SMA fiber adapter type) : L/L series (high precision type) : L/L series (silent type)

More information

Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) IR-enhanced CCD image sensors Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) The is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared

More information

Photosensor with front-end IC

Photosensor with front-end IC Near infrared sensor that integrates an InGas photodiode and front-end IC The is a compact optical device that integrates an InGas photodiode and front-end IC. Signal from a photodiode that receives near

More information

TDI-CCD area image sensor

TDI-CCD area image sensor S8658-01/01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S8658-01 is an front-illuminated FFT-CCD image sensor developed for X-ray imaging. A F (Fiber Optic plate with Scintillator)

More information

Applications. active pixels [mm (H) mm(v)] S9979 Non-cooled

Applications. active pixels [mm (H) mm(v)] S9979 Non-cooled IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular,

More information

CCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available. S11071/S series

CCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available.  S11071/S series Improved etaloning characteristics, High-speed type and low noise type available The are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type (S11071 series)

More information

Digital Cameras for Microscopy

Digital Cameras for Microscopy Digital Cameras for Microscopy Fast frame rate and high sensitivity EM-CCD (Electron multiplication CCD) cameras High dynamic range Enhanced Ideal format for short exposures, fast frame rate and high dynamic

More information

CCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available. S11071/S series

CCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available.  S11071/S series Improved etaloning characteristics, High-speed type and low noise type available The are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type (S11071 series)

More information

S3922/S3923 series. NMOS linear image sensor. Voltage output type with current-integration readout circuit and impedance conversion circuit.

S3922/S3923 series. NMOS linear image sensor. Voltage output type with current-integration readout circuit and impedance conversion circuit. IMAGE SENSOR NMOS linear image sensor S39/S393 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode

More information

Applications KMPDC0019EA. S3923 series: a=25 µm, b=20 µm Absolute maximum ratings Parameter Symbol Value

Applications KMPDC0019EA. S3923 series: a=25 µm, b=20 µm Absolute maximum ratings Parameter Symbol Value IMAGE SENSOR NMOS linear image sensor S39/S393 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode

More information

Near infrared/proximity type sensor

Near infrared/proximity type sensor Reflective sensor with InGas photodiode and infrared housed in a compact package This reflective sensor houses an InGas PIN photodiode and 1.45 μm band in a compact package. The irradiates infrared light

More information

CCD area image sensor

CCD area image sensor IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers

More information

Applications. General ratings Parameter S S S

Applications. General ratings Parameter S S S IMAGE SENSOR CCD area image sensor S9736 series 52 52 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific

More information

CCD linear image sensors

CCD linear image sensors S55-048-0 S56-048-0 Back-thinned CCD image sensors with electronic shutter function The S55-048-0 and S56-048-0 are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers.

More information

CCD area image sensors

CCD area image sensors CCD area image sensors S814 S811-11 Front-illuminated FFT-CCD for X-ray imaging The S814 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S814 has about 2 mega

More information

PHOTOMULTIPLIER TUBE MODULES, NEW RELEASED PAMPHLET

PHOTOMULTIPLIER TUBE MODULES, NEW RELEASED PAMPHLET PHOTOMULTIPLIER TUBE MODULES, NEW RELEASED PAMPHLET This pamphlet is gathered up the new released products from January 9. Photomultiplier tube (PMT) module functions are shown in the chart below. PMT

More information

TECHNICAL INFORMATION. How to Use UVTRON

TECHNICAL INFORMATION. How to Use UVTRON TECHNICAL INFORMATION How to Use The is a sensor sensitive only to ultraviolet light with wavelengths shorter than 26 nm. Featuring high sensitivity high output, and high-speed response, the is the ideal

More information

CCD area image sensors

CCD area image sensors S7170-0909 S7171-0909-01 512 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP (multi-pinned phase) mode back-thinned FFT-CCDs specifically designed for low-light-level detection in scientific applications.

More information

CCD image sensor. High-speed operation, back-thinned FFT-CCD. S9037/S9038 series. Structure

CCD image sensor. High-speed operation, back-thinned FFT-CCD.  S9037/S9038 series. Structure High-speed operation, back-thinned FFT-CCD The FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide bandwidth is used to an image sensor, a pixel

More information

CCD image sensors. Enhanced near infrared sensitivity, Constant element temperature control. S11511 series. Applications.

CCD image sensors. Enhanced near infrared sensitivity, Constant element temperature control.  S11511 series. Applications. Enhanced near infrared sensitivity, Constant element temperature control The is a family of FFT (full frame transfer)-ccd image sensors for photometric applications that offer improved sensitivity in the

More information

CCD area image sensor

CCD area image sensor High sensitivity in U region, anti-blooming function included The CCD area image sensor has a back-thinned structure that enables a high sensitivity in the U to visible region as well as a wide dynamic

More information

CCD linear image sensors

CCD linear image sensors S13255-2048-02 S13256-2048-02 Back-thinned CCD image sensors with electronic shutter function The S13255-2048-02 and S13256-2048-02 are back-thinned CCD linear image sensors with an internal electronic

More information

Applications. Number of total pixels. Number of active pixels

Applications. Number of total pixels. Number of active pixels IMAGE SENSOR CCD area image sensor S7/S7 series Back-thinned FFT-CCD S7/S7 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By

More information

TDI-CCD image sensors

TDI-CCD image sensors S10201-04-01 S10202-08-01 S10202-16-01 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD image sensers capture clear and bright images even under low-light-level conditions.

More information

PMA-12. Photonic multichannel analyzer. Scientific applications. Industrial applications. UV to visible spectroscopy. Fluorescence spectroscopy

PMA-12. Photonic multichannel analyzer. Scientific applications. Industrial applications. UV to visible spectroscopy. Fluorescence spectroscopy Photonic multichannel analyzer Scientific applications UV to visible spectroscopy Fluorescence spectroscopy Raman scattering Chemiluminescence analysis Liquid chromatography Gas chromatography ICP emission

More information

MIRROR QE=0.1 % MIRROR

MIRROR QE=0.1 % MIRROR MICROCHANNEL PLATE- PHOTOMULTIPLIER TUBES (MCP-PMT) SERIES FEATURES High Speed Rise Time: 160 ps IRF (Instrument Response Function) A : 55 ps (FWHM) Low Noise Compact Profile Useful Photocathode: 11 mm

More information

Technical note EM-CCD CAMERA. 1. Introduction

Technical note EM-CCD CAMERA. 1. Introduction EM-CCD CAMERA Technical note 1. Introduction 2. Technologies of cooled CCD cameras 2.1 Hermetic vacuum-sealed chamber 2.2 Advantages of an Interline Transfer CCD (ER-150 CCD) 2.3 Readout noise 2.4 Dark

More information

GATED MICROCHANNEL PLATE PHOTOMULTIPLIER TUBES (MCP-PMT) R5916U-50 SERIES

GATED MICROCHANNEL PLATE PHOTOMULTIPLIER TUBES (MCP-PMT) R5916U-50 SERIES PHOTOMULTIPLIER TUBES (MCP-PMT) SERIES FEATURES High Speed Gating by Low Supply Voltage (+10 V) Gate Rise Time : 1 ns A Gate Width : 3 ns Fast Rise Time : 180 ps Narrow T.T.S. B : 90 ps High Switching

More information

CCD area image sensor

CCD area image sensor Back-thinned FFT-CCD The is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the can be used as a linear

More information

ILX pixel CCD Linear Image Sensor (B/W)

ILX pixel CCD Linear Image Sensor (B/W) VOUT VGG 8 Internal Structure Output amplifier S/H circuit 22 2 2 7 6 4 3 2 D3 D4 D32 S S2 S3 S246 S247 S248 D33 D34 D3 D36 D37 D38 Clock plse generator/ Sample-and-hold pulse generator Readout gate CCD

More information

CCD area image sensor

CCD area image sensor Low readout noise, high resolution (pixel size: 12 μm) The is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the

More information

Preliminary TCD2704D. Features. Pin Connections (top view) Maximum Ratings (Note 1)

Preliminary TCD2704D. Features. Pin Connections (top view) Maximum Ratings (Note 1) Preliminary TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) T C D 2 7 0 4 D The TCD2704D is a high sensitive and low dark current 7500 elements 4 line CCD color image sensor which includes

More information

Input aperture size (mm) Supply voltage Features Conversion dynode ± 1.

Input aperture size (mm) Supply voltage Features Conversion dynode ± 1. PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers

More information

Electron Multiplying CCD Camera. series

Electron Multiplying CCD Camera. series Electron Multiplying CCD Camera series Multiply faster R The ImagEM X2 is an extremely versatile camera that quietly delivers 70 frames/s at full frame and up to 1076 frames/s with analog binning and regions

More information

TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2561D

TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2561D TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements 4 line CCD color image sensor which includes CCD drive circuit,

More information

Multiply faster R. 70 frames/s frames/s. Electron Multiplying CCD Camera

Multiply faster R. 70 frames/s frames/s. Electron Multiplying CCD Camera Electron Multiplying CCD Camera Multiply faster R The ImagEM X2 is an extremely versatile camera that quietly delivers 70 frames/s at full frame and up to 1076 frames/s with analog binning and regions

More information

Wide range of applications from Real time imaging of low light fluorescence to Ultra low light detection

Wide range of applications from Real time imaging of low light fluorescence to Ultra low light detection Electron Multiplier CCD Camera C100-13, -14 Wide range of applications from Real time imaging of low light fluorescence to Ultra low light detection Great Stability High Sensitivity Low Noise High Resolution

More information

Quantum Cascade Laser

Quantum Cascade Laser Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-ir range (4 µm to 10 µm). They have

More information

Photodiode Detector with Signal Amplification XB8816R Series

Photodiode Detector with Signal Amplification XB8816R Series 107 Bonaventura Dr., San Jose, CA 95134 Tel: +1 408 432 9888 Fax: +1 408 432 9889 www.x-scanimaging.com Linear X-Ray Photodiode Detector Array with Signal Amplification XB8816R Series An X-Scan Imaging

More information

ILX526A pixel CCD Linear Image Sensor (B/W)

ILX526A pixel CCD Linear Image Sensor (B/W) D4 D D4 D S S S3 S999 S3 D6 D6 3-pixel CCD Linear Image Seor (B/W) ILX6A Description The ILX6A is a rectangular reduction type CCD linear image seor designed for bar code POS hand scanner and optical measuring

More information

Contact Image Sensor (CIS) Module

Contact Image Sensor (CIS) Module Preliminary Contact Image Sensor (CIS) Module Product Name M106-A9G Approval Notes CMOS Sensor Inc. 20045 Stevens Creek Blvd., Suite 1A Cupertino, CA., 95014 Tel: (408) 366-2898 Fax: (408) 366-2698 Approved

More information

Linear X-Ray Photodiode Detector Array with Signal Amplification

Linear X-Ray Photodiode Detector Array with Signal Amplification 70 Bonaventura Dr., San Jose, CA 95134 Tel: +1 408 432 9888 Fax: +1 408 432 9889 www.x-scanimaging.com Linear X-Ray Photodiode Detector Array with Signal Amplification XB8850 Series An X-Scan Imaging XB8850

More information

Photo IC for optical link

Photo IC for optical link S11355-03 P11379-04AT Transmitter photo IC Receiver photo IC S11355-03 Transmitter/ receiver photo IC P11379-04AT For 150 Mbps optical link These photo ICs is capable of data communication at a transmission

More information

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The is a linear image sensor suitable for a multichip contact image sensor with resolution of 8 dots per mm. The obtained image signals by light

More information

7926-pixel CCD Linear Image Sensor (B/W) For the availability of this product, please contact the sales office.

7926-pixel CCD Linear Image Sensor (B/W) For the availability of this product, please contact the sales office. ILX8A 796-pixel CCD Linear Image Seor (B/W) For the availability of this product, please contact the sales office. Description The ILX8A is a reduction type CCD linear seor 4 pin DIP (Ceramic) developed

More information

TSL LINEAR SENSOR ARRAY

TSL LINEAR SENSOR ARRAY 896 1 Sensor-Element Organization 200 Dots-Per-Inch (DPI) Sensor Pitch High Linearity and Uniformity Wide Dynamic Range...2000:1 (66 db) Output Referenced to Ground Low Image Lag... 0.5% Typ Operation

More information

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR. Rev.1.1_10

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR. Rev.1.1_10 Rev.1.1_10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The is a linear image sensor suitable for a multichip contact image sensor with resolution of 8 dots per mm. The obtained image signals by light

More information

ILX pixel CCD Linear Image Sensor (B/W)

ILX pixel CCD Linear Image Sensor (B/W) -pixel CCD Linear Image Seor (B/W) ILX6 Description The ILX6 is a reduction type CCD linear seor developed for high resolution facsimiles and copiers. This seor reads A-size documents at a deity of DPI

More information

CCD525 Time Delay Integration Line Scan Sensor

CCD525 Time Delay Integration Line Scan Sensor CCD525 Time Delay Integration Line Scan Sensor FEATURES 248 Active Pixels Per Line 96 TDI Lines 13µm x13 µm Pixels 4 Speed Output Ports TDI Stages Selectable Between 96, 64, 48, 32, or 24 1 MHz Data Rate

More information

FEATURES GENERAL DESCRIPTION. CCD Element Linear Image Sensor CCD Element Linear Image Sensor

FEATURES GENERAL DESCRIPTION. CCD Element Linear Image Sensor CCD Element Linear Image Sensor CCD 191 6000 Element Linear Image Sensor FEATURES 6000 x 1 photosite array 10µm x 10µm photosites on 10µm pitch Anti-blooming and integration control Enhanced spectral response (particularly in the blue

More information

TCD2557D TCD2557D FEATURES PIN CONNECTION. MAXIMUM RATINGS (Note 1) (TOP VIEW) TOSHIBA CCD LINEAR IMAGE SENSOR CCD (Charge Coupled Device)

TCD2557D TCD2557D FEATURES PIN CONNECTION. MAXIMUM RATINGS (Note 1) (TOP VIEW) TOSHIBA CCD LINEAR IMAGE SENSOR CCD (Charge Coupled Device) TOSHIBA CCD LINEAR IMAGE SENSOR CCD (Charge Coupled Device) TCD2557D TCD2557D The TCD2557D is a high sensitive and low dark current 5340 elements 3 line CCD color image sensor which includes CCD drive

More information

Pixel. Pixel 3. The LUMENOLOGY Company Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 Plano, TX (972)

Pixel. Pixel 3. The LUMENOLOGY Company Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 Plano, TX (972) 64 1 Sensor-Element Organization 200 Dots-Per-Inch (DPI) Sensor Pitch High Linearity and Uniformity Wide Dynamic Range...2000:1 (66 db) Output Referenced to Ground Low Image Lag... 0.5% Typ Operation to

More information

ILX554B pixel CCD Linear Sensor (B/W) for Single 5V Power Supply Bar-code Reader

ILX554B pixel CCD Linear Sensor (B/W) for Single 5V Power Supply Bar-code Reader 248-pixel CCD Linear Seor (B/W) for Single 5V Power Supply Bar-code Reader Description The ILX554B is a rectangular reduction type CCD linear image seor designed for bar code POS hand scanner and optical

More information

TSL1406R, TSL1406RS LINEAR SENSOR ARRAY WITH HOLD

TSL1406R, TSL1406RS LINEAR SENSOR ARRAY WITH HOLD 768 Sensor-Element Organization 400 Dot-Per-Inch (DPI) Sensor Pitch High Linearity and Uniformity Wide Dynamic Range...4000: (7 db) Output Referenced to Ground Low Image Lag... 0.5% Typ Operation to 8

More information

ams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information:

ams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 (0) 3136 500 0 e-mail: ams_sales@ams.com

More information

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1205DG

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1205DG Preliminary TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1205DG The TCD1205DG is a high sensitive and low dark current 2048 elements linear image sensor. The sensor can be used for POS

More information

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1304AP

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1304AP TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1304AP TCD1304AP The TCD1304AP is a high sensitive and low dark current 3648 elements linear image sensor. The sensor can be used for POS scanner.

More information

GP1U26X/GP1U27X Series GP1U28X/GP1U28Y Series

GP1U26X/GP1U27X Series GP1U28X/GP1U28Y Series GP1U26X/GP1U27X Series GP1U28X/GP1U28Y Series Features 1. Compact (case volume) (GP1U28Y : About 1/4 compared with GP1U58Y) 2. Height from PWB to detector face same as GP1U58Y 3. Power filter capacitor

More information

CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor

CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES 1024 by 1024 Nominal (1056 by 1027 Usable Pixels) Image area 13.3 x 13.3mm Back Illuminated format for high quantum efficiency

More information

Block Diagram GND. amplifier 5 GND G R B

Block Diagram GND. amplifier 5 GND G R B 68 pixel 3 line CCD Linear Seor (Color) Description The is a reduction type CCD linear seor developed for color image scanner. This seor reads A-size documents at a deity of DPI. pin DIP (Plastic) Features

More information

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1208AP

TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1208AP TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) TCD1208AP TCD1208AP The TCD1208AP is a high sensitive and low dark current 2160 element image sensor. The sensor can be used for facsimile, imagescanner

More information

CCD42-10 Back Illuminated High Performance AIMO CCD Sensor

CCD42-10 Back Illuminated High Performance AIMO CCD Sensor CCD42-10 Back Illuminated High Performance AIMO CCD Sensor FEATURES 2048 by 512 pixel format 13.5 µm square pixels Image area 27.6 x 6.9 mm Wide Dynamic Range Symmetrical anti-static gate protection Back

More information

Imaging Software Optimized for Image Acquisition and Analysis

Imaging Software Optimized for Image Acquisition and Analysis Imaging Software Optimized for Image Acquisition and Analysis HCImage is designed to solve a wide range of imaging applications. It includes an extensive range of image processing tools that can be used

More information

TCD1711DG TCD1711DG. Features. Pin Connection (top view) Maximum Ratings (Note 1)

TCD1711DG TCD1711DG. Features. Pin Connection (top view) Maximum Ratings (Note 1) TOSHIBA CCD Linear Image Sensor CCD (Charge Coupled Device) TCD7DG TCD7DG The TCD7DG is a high sensitive and low dark current 7450 elements CCD image sensor. The sensor is designed for facsimile, imagescanner

More information

KAF- 1602E (H) x 1024 (V) Pixel. Full-Frame CCD Image Sensor. Performance Specification. Eastman Kodak Company. Image Sensor Solutions

KAF- 1602E (H) x 1024 (V) Pixel. Full-Frame CCD Image Sensor. Performance Specification. Eastman Kodak Company. Image Sensor Solutions KAF- 1602E 1536 (H) x 1024 (V) Pixel Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 1 April 3, 2001 TABLE OF

More information