NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV Operational Amplifier, Railto-Rail

Size: px
Start display at page:

Download "NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV Operational Amplifier, Railto-Rail"

Transcription

1 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 Operational Amplifier, Railto-Rail Output, 3 MHz BW The NCx27x series operational amplifiers provide rail to rail output operation, 3 MHz bandwidth, and are available in single, dual, and quad configurations. Rail to rail operation enables the user to make optimal use of the entire supply voltage range while taking advantage of 3 MHz bandwidth. The NCx27x can operate on supply voltages as low as 2.7 V over the temperature range of 4 C to 25 C. At a 2.7 V supply, the high bandwidth provides a slew rate of 2.8 V/ s while only consuming 45 A of quiescent current per channel. The wide supply range allows the NCx27x to run on supply voltages as high as 36 V, making it ideal for a broad range of applications. Since this is a CMOS device, high input impedance and low bias currents make it ideal for interfacing to a wide variety of signal sensors. The NCx27x devices are available in a variety of compact packages. Automotive qualified options are available under the NCV prefix. Features Rail To Rail Output Wide Supply Range: 2.7 V to 36 V Wide Bandwidth: 3 MHz typical at V S = 2.7 V High Slew Rate: 2.8 V/ s typical at V S = 2.7 V Low Supply Current: 45 A per channel at V S = 2.7 V Low Input Bias Current: 5 pa typical Wide Temperature Range: 4 C to 25 C Available in a variety of packages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Current Sensing Signal Conditioning Automotive End Products Notebook Computers Portable Instruments Power Supplies SOT 553 CASE 463B Micro8 CASE 846A TSSOP 8 CASE 948S 4 ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. SOIC 4 NB CASE 75A 5 TSOP 5 CASE SOIC 8 CASE 75 TSSOP 4 CASE 948G DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. 4 This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. Semiconductor Components Industries, LLC, 27 November, 27 Rev. 3 Publication Order Number: NCS27/D

2 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 MARKING DIAGRAMS Single Channel Configuration NCS27, NCV27 XXM SOT 553 CASE 463B 5 XXXAYW TSOP 5 CASE 483 Dual Channel Configuration NCS272, NCV AYW 8 NCS272 ALYW K72 YWW A Micro8 CASE 846A SOIC 8 CASE 75 TSSOP 8 CASE 948S Quad Channel Configuration NCS274, NCV274 4 NCS2 74 ALYW 4 NCS274G AWLYWW TSSOP 4 CASE 948G SOIC 4 NB CASE 75A XXXXX = Specific Device Code A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or = Pb Free Package (Note: Microdot may be in either location) 2

3 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 Single Channel Configuration NCS27, NCV27 OUT 5 VDD IN+ 5 VDD + VSS 2 + VSS 2 IN+ 3 4 IN IN 3 4 OUT SOT23 5 (TSOP 5) SOT553 5 Dual Channel Configuration NCS272, NCV272 OUT Quadruple Channel Configuration NCS274, NCV274 4 OUT 4 OUT 8 VDD IN 2 3 IN 4 IN IN+ VSS OUT 2 IN 2 IN+ 2 IN+ VDD IN+ 2 IN IN+ 4 VSS IN+ 3 IN 3 OUT OUT 3 Figure. Pin Connections 3

4 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ORDERING INFORMATION Device Configuration Automotive Marking Package Shipping NCS27SN2TG NCS27XV53T2G (In Development)** NCV27SN2TG* NCV27XV53T2G* (In Development)** Single No Yes AEA AL AEA AL TSOP 5 SOT553 5 TSOP 5 SOT / Tape and Reel 4 / Tape and Reel 3 / Tape and Reel 4 / Tape and Reel NCS272DMR2G 72 Micro8 (MSOP8) 4 / Tape and Reel NCS272DR2G NCS272 SOIC 8 No NCS272DTBR2G K72 TSSOP 8 NCV272DMR2G* Dual 72 Micro8 (MSOP8) NCV272DR2G* NCS272 SOIC 8 Yes NCV272DTBR2G* K72 TSSOP 8 25 / Tape and Reel 25 / Tape and Reel 4 / Tape and Reel 25 / Tape and Reel 25 / Tape and Reel NCS274DR2G NCS274DTBR2G NCV274DR2G* NCV274DTBR2G* Quad No Yes NCS274 NCS2 74 NCS274 NCS2 74 SOIC 4 TSSOP 4 SOIC 4 TSSOP 4 25 / Tape and Reel 25 / Tape and Reel 25 / Tape and Reel 25 / Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable. **Contact local sales office for availability. 4

5 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ABSOLUTE MAXIMUM RATINGS (Note ) Rating Symbol Limit Unit Supply Voltage (V DD V SS ) (Note 4) V S 4 V Input Voltage V CM V SS.2 to V DD +.2 V Differential Input Voltage (Note 2) V ID ±V s V Maximum Input Current I IN ± ma Maximum Output Current (Note 3) I O ± ma Continuous Total Power Dissipation (Note 4) P D 2 mw Maximum Junction Temperature T J 5 C Storage Temperature Range T STG 65 to 5 C Mounting Temperature (Infrared or Convection 2 sec) T mount 26 C ESD Capability (Note 5) Human Body Model Machine Model NCx27 Machine Model NCx272, NCx274 Charged Device Model NCx27, NCx272 Charged Device Model NCx274 HBM MM MM CDM CDM (C6) (C6) Latch Up Current (Note 6) I LU ma Moisture Sensitivity Level (Note 7) MSL Level Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Maximum input current must be limited to ± ma. Series connected resistors of at least 5 on both inputs may be used to limit the maximum input current to ± ma. 3. Total power dissipation must be limited to prevent the junction temperature from exceeding the 5 C limit. 4. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 5 C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability. 5. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per JEDEC standard JS- (AEC Q 2) ESD Machine Model tested per JEDEC standard JESD22 A5 (AEC Q 3) ESD Charged Device Model tested per JEDEC standard JESD22 C (AEC Q ) 6. Latch up Current tested per JEDEC standard JESD78 (AEC Q 4) 7. Moisture Sensitivity Level tested per IPC/JEDEC standard J STD 2A THERMAL INFORMATION Junction to Ambient Parameter Symbol Package JA Single Layer Board (Note 8) Multi Layer Board (Note 9) SOT23 5 / TSOP SOT Micro8 / MSOP SOIC TSSOP SOIC 4 42 TSSOP Values based on a S standard PCB according to JEDEC5 3 with. oz copper and a 3 mm 2 copper area 9. Values based on a S2P standard PCB according to JEDEC5 7 with. oz copper and a mm 2 copper area OPERATING RANGES Parameter Symbol Min Max Unit Operating Supply Voltage (Single Supply) V S V Operating Supply Voltage (Split Supply) V S ±.35 ±8 V Differential Input Voltage (Note ) V ID V S V Input Common Mode Voltage Range V CM V SS V DD.35 V Ambient Temperature T A 4 25 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.. Maximum input current must be limited to ± ma. See Absolute Maximum Ratings for more information. V Unit C/W 5

6 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT V S = 2.7 V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes, 2) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage V OS NCx27 NCx272, NCx274.3 ± ±3 Offset Voltage Drift V OS / T T A = 25 C to 25 C 2 V/ C Input Bias Current (Note 2) I IB 5 2 Input Offset Current (Note 2) I OS NCx27, NCx272 Channel Separation XTLK DC NCx274 NCx272 NCx Differential Input Resistance R ID 5 G Common Mode Input Resistance R IN 5 G Differential Input Capacitance C ID.5 pf Common Mode Input Capacitance C CM 3.5 pf Common Mode Rejection Ratio CMRR V CM = V SS +.2 V to V DD.35 V OUTPUT CHARACTERISTICS Open Loop Voltage Gain A VOL 86 Op amp sinking current 7 Output Current Capability (Note 3) I O Op amp sourcing current 5 ma Output Voltage High V OH Voltage output swing from positive rail V Output Voltage Low V OL Voltage output swing from negative rail V AC CHARACTERISTICS Unity Gain Bandwidth UGBW C L = 25 pf 3 MHz Slew Rate at Unity Gain SR C L = 2 pf, R L = 2 k 2.8 V/ s Phase Margin m C L = 25 pf 5 Gain Margin A m C L = 25 pf 4 Settling Time t S V O = Vpp, Gain =, C L = 2 pf 69 Settling time to.%.6 Settling time to.%.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 3.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 2 mv pa pa s 6

7 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT V S = 2.7 V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes, 2) Parameter Symbol Conditions Min Typ Max Unit NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N V IN =.5 Vpp, f = khz, Av =.5 % f = khz 3 Input Referred Voltage Noise e n f = khz 2 nv/ Hz Input Referred Current Noise i n f = khz 9 fa/ Hz SUPPLY CHARACTERISTICS Power Supply Rejection Ratio PSRR No Load Power Supply Quiescent Current I DD NCx27 No load NCx272, NCx274 Per channel, no load Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 3.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 625 A ELECTRICAL CHARACTERISTICS AT V S = 5 V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 4, 5) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage V OS NCx27 NCx272, NCx274.3 ± ±3 Offset Voltage Drift V OS / T T A = 25 C to 25 C 2 V/ C Input Bias Current (Note 5) I IB 5 2 Input Offset Current (Note 5) I OS NCx27, NCx272 Channel Separation XTLK DC NCx274 NCx272 NCx Differential Input Resistance R ID 5 G Common Mode Input Resistance R IN 5 G Differential Input Capacitance C ID.5 pf Common Mode Input Capacitance C CM 3.5 pf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 6.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 2 mv pa pa 7

8 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT V S = 5 V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 4, 5) Parameter INPUT CHARACTERISTICS Symbol Conditions Common Mode Rejection Ratio CMRR V CM = V SS +.2 V to V DD.35 V OUTPUT CHARACTERISTICS Min Typ 2 25 VOL O 86 Open Loop Voltage Gain A 96 2 Op amp sourcing current 6 ma Output Current Capability (Note 6) I Op amp sinking current Output Voltage High V OH Voltage output swing from positive rail.25 V.. Output Voltage Low V OL Voltage output swing from negative rail.5 V AC CHARACTERISTICS Unity Gain Bandwidth UGBW C L = 25 pf 3 MHz Slew Rate at Unity Gain SR C L = 2 pf, R L = 2 k 2.7 V/ s Phase Margin m C L = 25 pf 5 Gain Margin A m C L = 25 pf 4 Settling Time t S V O = 3 Vpp, Gain =, C L = 2 pf 8 Settling time to.%.2 Settling time to.% 5.6 NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N V IN = 2.5 Vpp, f = khz, Av =.9 % Input Referred Voltage Noise e n f = khz 2 nv/ Hz f = khz 3 Input Referred Current Noise i n f = khz 9 fa/ Hz SUPPLY CHARACTERISTICS Power Supply Rejection Ratio PSRR No Load Power Supply Quiescent Current I DD NCx27 No load NCx272, NCx274 Per channel, no load Max Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 6.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 63 Unit s A 8

9 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT V S = V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 7, 8) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage V OS NCx27.3 ±3.5 mv 4.5 mv Input Offset Voltage V OS NCx272, NCx274.3 ±3 mv Offset Voltage Drift V OS / T T A = 25 C to 25 C 2 V/ C Input Bias Current (Note 8) I IB 5 2 Input Offset Current (Note 8) I OS NCx27, NCx272 Channel Separation XTLK DC NCx274 NCx272 NCx Differential Input Resistance R ID 5 G Common Mode Input Resistance R IN 5 G Differential Input Capacitance C ID.5 pf Common Mode Input Capacitance C CM 3.5 pf Common Mode Rejection Ratio CMRR V CM = V SS +.2 V to V DD.35 V OUTPUT CHARACTERISTICS Open Loop Voltage Gain A VOL 88 Op amp sinking current 5 Output Current Capability (Note 9) I O Op amp sourcing current 65 ma Output Voltage High V OH Voltage output swing from positive rail V Output Voltage Low V OL Voltage output swing from negative rail V AC CHARACTERISTICS Unity Gain Bandwidth UGBW C L = 25 pf 3 MHz Slew Rate at Unity Gain SR C L = 2 pf, R L = 2 k 2.6 V/ s Phase Margin m C L = 25 pf 5 Gain Margin A m C L = 25 pf 4 Settling Time t S V O = 8.5 Vpp, Gain =, C L = 2 pf 87 Settling time to.% 3.4 Settling time to.% 6.8 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 9.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 2 mv pa pa s 9

10 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT V S = V T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 7, 8) Parameter Symbol Conditions Min Typ Max Unit NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N V IN = 7.5 Vpp, f = khz, Av =.4 % f = khz 3 Input Referred Voltage Noise e n f = khz 2 nv/ Hz Input Referred Current Noise i n f = khz 9 fa/ Hz SUPPLY CHARACTERISTICS Power Supply Rejection Ratio PSRR No Load Power Supply Quiescent Current I DD NCx27 No load NCx272, NCx274 Per channel, no load Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 9.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 64 A ELECTRICAL CHARACTERISTICS AT T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 2, 2) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage V OS NCx27 NCx272, NCx274.3 ±3.5 mv 4.5 mv.3 ±3 mv Offset Voltage Drift V OS / T T A = 25 C to 25 C 2 V/ C Input Bias Current (Note 2) I IB Input Offset Current (Note 2) I OS NCx27, NCx272 Channel Separation XTLK DC NCx27, NCx272 2 NCx274 5 NCx274 NCx272 NCx Differential Input Resistance R ID 5 G Common Mode Input Resistance R IN 5 G Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 2 mv pa pa

11 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 2, 2) Parameter Symbol Conditions INPUT CHARACTERISTICS Differential Input Capacitance C ID.5 pf Common Mode Input Capacitance C CM 3.5 pf NCx27 V CM = V SS +.2 V to 8 35 V DD.35 V 95 Common Mode Rejection Ratio CMRR NCx272 V CM = V SS +.2 V to 2 45 V DD.35 V 95 NCx274 V CM = V SS +.2 V to 2 45 V DD.35 V 85 OUTPUT CHARACTERISTICS Open Loop Voltage Gain A VOL Op amp sourcing current 65 ma Output Current Capability (Note 22) I Op amp sinking current 5 Output Voltage High V OH Voltage output swing from positive rail NCx27 NCx272 NCx274 Output Voltage Low V OL Voltage output swing from negative rail Min Typ Max AC CHARACTERISTICS Unity Gain Bandwidth UGBW C L = 25 pf 3 MHz Slew Rate at Unity Gain SR C L = 2 pf, R L = 2 k 2.4 V/ s Phase Margin m C L = 25 pf 5 Gain Margin A m C L = 25 pf 4 Settling Time t S V O = Vpp, Gain =, C L = 2 pf Settling time to.% 3.2 Settling time to.% 7 NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N V IN = 28.5 Vpp, f = khz, Av =. % Input Referred Voltage Noise e n f = khz 2 nv/ Hz f = khz 3 Input Referred Current Noise i n f = khz 9 fa/ Hz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information..35 Unit V V s

12 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 ELECTRICAL CHARACTERISTICS AT T A = 25 C; R L k ; V CM = V OUT = mid supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, T A = 4 C to 25 C. (Notes 2, 2) Parameter SUPPLY CHARACTERISTICS Symbol Conditions Power Supply Rejection Ratio PSRR No Load Power Supply Quiescent Current I DD NCx27 NCx272 NCx274 No load Per channel, no load Per channel, no load Min Typ Max Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22.Power dissipation must be limited to prevent junction temperature from exceeding 5 C. See Absolute Maximum Ratings for more information. 7 Unit A 2

13 NCS27, NCV27, NCS272, NCV272, NCS274, NCV SUPPLY CURRENT (ma) T = 25 C T = 85 C T = 25 C T = 4 C SUPPLY CURRENT (ma) V S = V V S = 5 V V S = 2.7 V SUPPLY VOLTAGE (V) Figure 2. Quiescent Current Per Channel vs. Supply Voltage TEMPERATURE ( C) Figure 3. Quiescent Current vs. Temperature OFFSET VOLTAGE (mv) T = 4 C T = 85 C T = 25 C T = 25 C V CM = mid supply OFFSET VOLTAGE (mv) V S = ±8 V units SUPPLY VOLTAGE (V) Figure 4. Offset Voltage vs. Supply Voltage COMMON MODE VOLTAGE (V) Figure 5. Input Offset Voltage vs. Common Mode Voltage OFFSET VOLTAGE (mv) Normal operation V S = ±8 V units GAIN () GAIN R L = k C L = 5 pf PHASE V S = 2.7 V, Gain, Gain V S = 2.7 V, Phase, Phase PHASE ( ) k k k M M COMMON MODE VOLTAGE (V) Figure 6. Input Offset Voltage vs. Common Mode Voltage FREQUENCY (Hz) Figure 7. Gain and Phase vs. Frequency 8 M 3

14 NCS27, NCV27, NCS272, NCV272, NCS274, NCV V S = 5 V R L = k T A = 25 C E+ E+ f IN = khz A V = PHASE MARGIN ( ) THD+N (%) E E 2 E CAPACITIVE LOAD (pf) Figure 8. Phase Margin vs. Capacitive Load E OUTPUT VOLTAGE (Vpp) Figure 9. THD+N vs. Output Voltage THD+N (%) E+ A V = E+ E E 2 V S = 2.7 V V S = 5 V V S = V V E 3 S = 36 V E 4 k k FREQUENCY (Hz) Figure. THD+N vs. Frequency VOLTAGE NOISE (nv/ Hz) 275 V S = 2.7 V 25 V S = 5 V 225 V S = V k k k FREQUENCY (Hz) Figure. Input Voltage Noise vs. Frequency INPUT REFERRED CURRENT NOISE (fa/ Hz). k k k FREQUENCY (Hz) V S = 2.7 V V S = 5 V V S = V Figure 2. Input Current Noise vs. Frequency PSRR () k k k M FREQUENCY (Hz) Figure 3. PSRR vs. Frequency V S = 2.7 V, V DD V S = 2.7 V, V SS, V DD V SS 4

15 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 CMRR () FREQUENCY (Hz) Figure 4. CMRR vs. Frequency V S = 2.7 V V S = 5 V V S = V R L = k T A = 25 C k k k M OUTPUT VOLTAGE RELATIVE TO V DD (V) T = 4 C T = 25 C T = 85 C T = 25 C OUTPUT CURRENT (ma) Figure 5. High Level Output vs. Output Current 2 OUTPUT VOLTAGE RELATIVE TO V SS (V) T = 4 C T = 25 C T = 85 C T = 25 C OUTPUT CURRENT (ma) Figure 6. Low Level Output vs. Output Current VOLTAGE (V) Input Output A V = + R L = k TIME ( s) Figure 7. Non inverting Small Signal Transient Response Input Output 25 VOLTAGE (V) TIME ( s) A V = + R L = k Figure 8. Inverting Small Signal Transient Response 6 VOLTAGE (V) 2 5 Input A V = + Output R L = k TIME ( s) Figure 9. Non inverting Large Signal Transient Response 5

16 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 VOLTAGE (V) A V = R L = k CURRENT (pa) I IB + I IB I OS 2 Input Output TIME ( s) Figure 2. Inverting Large Signal Transient Response TEMPERATURE ( C) Figure 2. Input Bias and Offset Current vs. Temperature CURRENT (pa) I IB + I IB I OS 2 V/div. Hz to Hz noise V S = ±8 V, V CM = V S /2 R L = k, C L = pf A V =, V IN = V COMMON MODE VOLTAGE (V) Figure 22. Input Bias Current vs. Common Mode Voltage TIME (s) Figure 23.. Hz to Hz Noise CHANNEL SEPARATION () 5 R L = k V S = 2.7 V 2 45 C L = 25 pf V S = 5 V 4 V S = V V S = 2.7 V 5 V S = 5 V 4 V S = V 5 6 k k k M k k k M FREQUENCY (Hz) Figure 24. Channel Separation vs. Frequency IMPEDANCE ( ) FREQUENCY (Hz) Figure 25. Open Loop Output Impedance 6

17 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 OFFSET VOLTAGE ( V) Units V CM = mid supply TEMPERATURE ( C) Figure 26. Offset Voltage vs. Temperature 25 FROM FINAL VALUE (mv) V step A V = bit Setting ±/2LSB = ±.24% TIME ( s) Figure 27. Large Signal Settling Time 5 4 SR+ SR SLEW RATE (V/ s) TEMPERATURE ( C) Figure 28. Slew Rate vs. Temperature 7

18 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 APPLICATIONS INFORMATION Input Circuit The NCS27x input stage has a PMOS input pair and ESD protection diodes. The input pair is internally connected by back to back Zener diodes with a reverse voltage of 5.5 V. To protect the internal circuitry, the input current must be limited to ma. When operating the VDD NCS27x at differential voltages greater than V ID = 26 V, series resistors can be added externally to limit the input current flowing between the input pins. Adding 5 resistors in series with the input prevents the current from exceeding ma over the entire operating range up to 36 V. VDD IN+ k k IN VSS Figure 29. Differential Input Pair VSS Output The NCS27x has a class AB output stage with rail to rail output swing. High output currents can cause the junction temperature to exceed the 5 C absolute maximum rating. In the case of a short circuit where the output is connected to either supply rail, the amount of current the op amp can source and sink is described by the output current capability parameter listed in the Electrical Characteristics. The junction temperature at a given power dissipation, P, can be calculated using the following formula: T J = T A + P x JA The thermal resistance between junction and ambient, JA, is provided in the Thermal Information section of this datasheet. 8

19 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS SOT 553, 5 LEAD CASE 463B ISSUE C D X e E Y b 5 PL.8 (.3) M X Y A L H E c NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A b c D E e.5 BSC.2 BSC L H E RECOMMENDED SOLDERING FOOTPRINT* SCALE 2: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

20 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS TSOP 5 CASE 483 ISSUE M 2X 2X.2 NOTE 5 T. B.5 A T B H G A TOP VIEW SIDE VIEW C D 5X S.2 C SEATING PLANE C A B J K DETAIL Z END VIEW M DETAIL Z NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.5 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN.2 FROM BODY. MILLIMETERS DIM MIN MAX A B C D.25.5 G.95 BSC H.. J..26 K.2.6 M S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 2

21 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS Micro8 CASE 846A 2 ISSUE J H E D E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.25 (.) PER SIDE A- OBSOLETE, NEW STANDARD 846A-2. PIN ID T SEATING PLANE.38 (.5) e b 8 PL.8 (.3) M T B S A S A MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A..43 A b c D E e.65 BSC.26 BSC L H E A c L RECOMMENDED SOLDERING FOOTPRINT* 8X.48 8X PITCH DIMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 2

22 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS SOIC 8 NB CASE 75 7 ISSUE AK X B Y Z H 8 G A D 5 4 S C.25 (.) M Z Y S X S.25 (.) M SEATING PLANE Y. (.4) M N X 45 M SOLDERING FOOTPRINT* K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 75 6 ARE OBSOLETE. NEW STANDARD IS MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M 8 8 N S SCALE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 22

23 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS TSSOP 8 CASE 948S ISSUE C.2 (.8) T.2 (.8) T L U U.76 (.3) T SEATING PLANE S PIN IDENT S D 2X L/2 C 8 5 8x A V K REF 4. (.4) M T U S V S G B U J N ÉÉÉÉ ÇÇÇ ÉÉÉÉ ÇÇÇ DETAIL E N J K K SECTION N N.25 (.) M W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.25 (.) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.65 BSC.26 BSC J J K K L 6.4 BSC.252 BSC M 8 8 F DETAIL E 23

24 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS TSSOP 4 CASE 948G ISSUE C.5 (.6) T.5 (.6) T L. (.4) T SEATING PLANE U U S 2X L/2 PIN IDENT. S D C 4 4X K REF. (.4) M T U S V S N 8.25 (.) M B U 7 A V G H N J J F DETAIL E K K ÇÇÇ ÉÉÉ SECTION N N DETAIL E W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.25 (.) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.8 (.3) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C.2.47 D F G.65 BSC.26 BSC H J J K K L 6.4 BSC.252 BSC M 8 8 SOLDERING FOOTPRINT* PITCH 4X.36 4X.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 24

25 NCS27, NCV27, NCS272, NCV272, NCS274, NCV274 PACKAGE DIMENSIONS H M B M. e D 7 3X b A B.25 M C A S B S A E A C SEATING PLANE SOIC 4 NB CASE 75A 3 ISSUE L SOLDERING FOOTPRINT* 6.5 DETAIL A h X 45 M L A3 DETAIL A 4X.8 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE.3 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION.5 PER SIDE. MILLIMETERS INCHES DIM MIN MAX MIN MAX A A A b D E e.27 BSC.5 BSC H h L M PITCH 4X.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS27/D

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output

More information

LM321. Single Channel Operational Amplifier

LM321. Single Channel Operational Amplifier Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging

More information

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv

More information

NCS2250, NCV2250, NCS2252, NCV2252. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

NCS2250, NCV2250, NCS2252, NCV2252. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail NCS22, NCV22, NCS222, NCV222 Comparator, High Speed, ns, Low Voltage, Rail-to-Rail The NCS22 and NCS222 low voltage comparators feature fast response time and rail to rail input and output. The extended

More information

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

P2I2305NZ. 3.3V 1:5 Clock Buffer

P2I2305NZ. 3.3V 1:5 Clock Buffer 3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD3 (NPN), MJD3 (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change

More information

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer . V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon

BC846ALT1G Series. General Purpose Transistors. NPN Silicon BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators , LM293, LM293, LM293V, NCV293, NCV293V Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are

More information

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23 NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive

More information

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable

More information

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

BAV ma 70 V High Conductance Ultra-Fast Switching Diode BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration Applications

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

More information

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

NCS MHz Voltage Feedback Op Amp

NCS MHz Voltage Feedback Op Amp 75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture

More information

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

More information

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)

More information

LM339S, LM2901S. Single Supply Quad Comparators

LM339S, LM2901S. Single Supply Quad Comparators LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features

More information

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75 NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

More information

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75 Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

More information

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features. MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

More information

LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators

LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,

More information

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NSQA6V8AW5T2 Series Transient Voltage Suppressor Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

More information

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high

More information

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator NCP5732, NC5732 3. A, ery Low-Dropout (LDO) Fast Transient Response Regulator The NCP5732 is a high precision, very low dropout (LDO), low minimum input voltage and low ground current positive voltage

More information

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive

More information

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)

More information

NCP ma, 10 V, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator 15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP334 and NCP335 are low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

More information

MC33201, MC33202, MC33204, NCV33202, NCV Low Voltage, Rail-to-Rail Operational Amplifiers

MC33201, MC33202, MC33204, NCV33202, NCV Low Voltage, Rail-to-Rail Operational Amplifiers MC332, MC3322, MC3324, NCV3322, NCV3324 Low Voltage, Rail-to-Rail Operational Amplifiers The MC332/2/4 family of operational amplifiers provide railtorail operation on both the input and output. The inputs

More information

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

More information

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23 NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint

More information

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and

More information

LM431SA, LM431SB, LM431SC. Programmable Shunt Regulator

LM431SA, LM431SB, LM431SC. Programmable Shunt Regulator A, B, C Programmable Shunt Regulator Description The A / B / C are three terminal the output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set

More information

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

More information

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and

More information

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

More information

SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection

SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection , SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection

More information

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier MC3334 Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier The MC3334 is a monolithic bipolar operational amplifier. This low voltage rail to rail amplifier has both a rail to rail input and output

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection 3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

NVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel

NVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel NVMFDC478NL Power MOSFET 4 V, 4. m, 29 A, Dual N Channel Features Small Footprint ( x 6 mm) for Compact Design Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFDC478NLWF

More information

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.

More information

NL27WZ07. Dual Buffer with Open Drain Outputs

NL27WZ07. Dual Buffer with Open Drain Outputs Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including

More information

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes , Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

More information

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving

More information

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

More information

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual

More information

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m 35 V, 5 A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and

More information

KA431 / KA431A / KA431L Programmable Shunt Regulator

KA431 / KA431A / KA431L Programmable Shunt Regulator KA431 / KA431A / KA431L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range

More information

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction

More information

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )

More information

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF

More information

NCV4264-2C. Low I Q Low Dropout Linear Regulator

NCV4264-2C. Low I Q Low Dropout Linear Regulator NCV464-C Low I Q Low Dropout Linear Regulator The NCV464 C is a low quiescent current consumption LDO regulator. Its output stage supplies ma with ±.% output voltage accuracy. Maximum dropout voltage is

More information

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRA320T3G Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other

More information

NCV ma Micropower Precision Voltage Reference

NCV ma Micropower Precision Voltage Reference NCV51 ma Micropower Precision Voltage Reference The NCV51 is a high performance, low power precision voltage reference. This device combines very high accuracy, low power dissipation and small package

More information

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of

More information

NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output

NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output Description The NB3N508S is a high precision, low phase noise Voltage Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that

More information

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8 NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

More information

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay

More information

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier 4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information