EMI-Simulation of a SiC based DCDC-Converter in a CISPR25 component test setup

Transcription

1 EMI-Simulation of a SiC based DCDC-Converter in a CISPR25 component test setup P. Hillenbrand, J. Hansen - Introduction & EMI models overview - Transient simulation of commutation cell - AC simulation of test setup - Simulation result - Summary

2 Conducted and Radiated Emissions Test Setup University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

3 Conducted and Radiated Emissions Simulation models overview Level 1 Simple circuit model LISN LLISN 200 nf CLISN 25 Ω Inverter LTN ITN VCM Lpar,TN Lpar,PN CTN CPN VHV+ VHV- LEarth-Strap IPN LPN 3~Load CLoad + easy to understand - Low accuracy > 30 MHz - CM or DM model Level 2 + High accuracy > 30 MHz Geometry model with equivalent voltage sources - Measurements needed - Low accuracy of DM Level 3 Combination of transient simulation and geometry model Control Signals IHS ILS VLS HV+ HV- Physical reduced equivalent circuit of commutation cell U V C100n_1 C100n_18 C2.2µ_1ZLS C2.2µ_7 & LS HS Frequency domain representation of test setup LISN- LISN+ VLISN+,HS + high accuracy 50 Ω + 50 Ω no simplifications VLISN-,HS + no measurements needed University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

4 Conducted and Radiated Emissions 3D geometry model is to complex to simulate in time-domain AC simulation (3D geometry model) Time-domain simulation (circuit based) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

5 System Simulation Combine transient simulation with AC simulation Goal: efficient EMI simulation + understanding of all influencing effects Very large and complex problem AC Simulation preferred But: transient simulation necessary for nonlinear and time-variant switches Combine transient simulation of switches with AC simulation of test setup LTI or non- LTI system LTI or non- LTI system I port (f) External System I port (f) External LTI or non- System LTI system LTI or non- LTI system I eq (f) External System I eq (f) External System V x (t) Z x (t) V x (t) V port (f) Z x (t) V port (f) Z ext (f) Z ext (f) V eq (f) V eq (f) V eq (f) V eq (f) Z ext (f) Z ext (f) Time domain Time domain Frequency domain Frequency equivalent domain equivalent University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

6 System Simulation Combine transient simulation with AC simulation Goal: efficient EMI simulation + understanding of all influencing effects Very large and complex problem AC Simulation preferred But: transient simulation necessary for nonlinear and time-variant switches Combine transient simulation of switches with AC simulation of test setup non-lti system I p1 (f) LTI-system Eqv. LTI-system I p1,i (f) LTI-system V 1 (t) Y 1 (t) V p1 (f) V 1 (t) Y 1 (t) V p1,i (f) I pn (f) [Y ext ](f) à... I pn,i (f) [Y ext ](f) V n (t) Y n (t) V pn (f) Y n (f) V pn,i (f) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

7 System Simulation Combine transient simulation with AC simulation Goal: efficient EMI simulation + understanding of all influencing effects Very large and complex problem AC Simulation preferred But: transient simulation necessary for nonlinear and time-variant switches Combine transient simulation of switches with AC simulation of test setup non-lti system I p1 (f) LTI-system Eqv. LTI-system I p1,i (f) LTI-system Eqv. LTI-system I p1,i (f) LTI-system V 1 (t) Y 1 (t) V n (t) Y n (t) V p1 (f) I pn (f) V pn (f) [Y ext ](f) = n i = 1 V 1 (t) Y 1 (t) Y n (f)... V p1,i (f) I pn,i (f) V pn,i (f) [Y ext ](f)... Y 1 (f)... V n (t) Y n (t) V p1,i (f) I pn,i (f) V pn,i (f) [Y ext ](f) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

8 System Simulation Combine transient simulation with AC simulation Goal: efficient EMI simulation + understanding of all influencing effects Very large and complex problem AC Simulation preferred But: transient simulation necessary for nonlinear and time-variant switches Combine transient simulation of switches with AC simulation of test setup non-lti system I p1 (f) LTI-system Eqv. LTI-system I p1,i (f) LTI-system Eqv. LTI-system I p1,i (f) LTI-system V 1 (t) Y 1 (t) V n (t) Y n (t) V p1 (f) I pn (f) V pn (f) [Y ext ](f) = n i = 1 V 1 (f) Y n (f)... V p1,i (f) I pn,i (f) V pn,i (f) [Y ext ](f)... Y 1 (f) V n (f)... V p1,i (f) I pn,i (f) V pn,i (f) [Y ext ](f) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

9 System Simulation DCDC converter example Replacement of switches by LTI voltage sources and impedances nonlinear & time variant linear & time invariant Battery Cables & LISNs C DC L DC V HS V LS C HV+ C U Motor Cables & Load Battery Cables & LISNs C DC L DC V HS Z LS C HV+ C U Motor Cables & Load & Battery Cables & LISNs C DC L DC Z HS V LS C HV+ C U Motor Cables & Load C HV- C HV- C HV- Time-domain simulation of commutation cell University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

10 System Simulation Workflow step 1 TD simulation HV+ HV- Switch-off High-Side Switch (Example) I HS C 100n_1 Control Signals I LS V HS V LS Physical reduced equivalent circuit of commutation cell C 100n_18 C 2.2µ_1 C 2.2µ_7 U V University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

11 System Simulation Workflow step 2 TD simulation Switch-off High-Side Switch (Example) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

12 System Simulation Workflow step 3 TD simulation AC simulation V HS Z LS LS HS Frequency domain representation of test setup LISN- LISN+ V LISN+,HS 50 Ω 50 Ω V LISN-,HS Z HS V LS LS HS Frequency domain representation of test setup LISN- LISN+ V LISN+,HS 50 Ω 50 Ω V LISN-,HS University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

13 System Simulation Workflow step 4 TD simulation AC simulation V HS Z LS LS HS Frequency domain representation of test setup LISN- LISN+ V LISN+,HS 50 Ω 50 Ω V LISN-,HS Z HS V LS LS HS Frequency domain representation of test setup LISN- LISN+ V LISN+,HS 50 Ω 50 Ω V LISN-,HS University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

14 HV+ HV- IHS C100n_1 Time-domain Simulation Parasitic elements of commutation cell Control Signals ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_18 C2.2µ_1 C2.2µ_7 Detailed geometry model of PCB and switches Generation of equivalent circuit with a) PHREEC b) Model order reduction HV+ HV- DC link capacitors (Ports) High-Side Low-Side W SiC MOSFETs U V Drain-Pin Source-Pin Semiconductor (Port) University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

15 HV+ HV- IHS C100n_1 Time-domain Simulation Equivalent circuit of DC-link Control Signals ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_18 C2.2µ_1 C2.2µ_7 Behavioral model Modelling of frequency depending resistance Example: 2.2 µf electrolyte capacitor L ESL C cap R ESR R(f) L 1 L 2 L n Z R 1 R 2 R n 100nF 2.2 µf University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

16 IV-curves Capacitances HV+ HV- IHS C100n_1 Time-domain Simulation MOSFET spice model Control Signals ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_18 C2.2µ_1 C2.2µ_7 SiC MOSFET model Behavioral model for 25 C From measurement or datasheet Drain C GD (V DS ) R DS (I DS ) Gate R G I DS (V DS,V GS ) V DS C DS (V DS ) V GS C GD Source University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

17 Currents Voltages HV+ IHS C100n_1 Time-domain Simulation Simulation results Control Signals ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_18 C2.2µ_1 C2.2µ_7 High side MOSFET in double pulse test Switch-On Switch-Off V DC = 180 V, I Load = 10 A HV+ HV- HV- I HS C 100n_1 Control Signals I LS V HS V LS Physical reduced equivalent circuit of commutation cell C 100n_18 C 2.2µ_1 C 2.2µ_7 U V University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

18 AC-Simulation ZLS LS HS Frequency domain representation of test setup LISN- LISN+ Geometry model of test setup Combine 3D geometry model with measured frequency domain data 350k tetrahedrons, Broadband AC-solver using model order LISN & DC-Supply 4x4 S-Parameter ~load 3x3 S-Parameter Simulate V HS Z LS S-Parameters LS HS Frequency domain representation of test setup LISN- LISN+ 6x 2.2 uf electrolyte capacitor 1x1 S-Parameter 18x 100 nf ceramic capacitor 1x1 S-Parameter University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

19 Measurement Simulation Sources LISN HV+ HV- Combined Results (transient & AC) Conducted emissions Control Signals IHS ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_1 C100n_18 C2.2µ_1 C2.2µ_7 & ZLS LS HS Frequency domain representation of test setup LISN- LISN+ Inverter in DCDC double pulse test without filters A B University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

20 Measurement Simulation Sources Antenna HV+ HV- Combined Results (transient & AC) Radiated emissions Control Signals IHS ILS VLS Physical reduced equivalent circuit of commutation cell U V C100n_1 C100n_18 C2.2µ_1 C2.2µ_7 & ZLS LS HS Frequency domain representation of test setup LISN- LISN+ Inverter in DCDC double pulse test without filters A University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand

21 Summary & Outlook Modell approach to combine a transient simulation with AC simulation Transient simulation based on equivalent circuit of the commutation cell AC simulation: 3D geometry model & measurements High accuracy can be achieved for conducted and radiated emissions µr`(f) & µr``(f) x 330nF electrolyte capacitor 1x1 S-Parameter 2x 4.7µF electrolyte capacitor 1x1 S-Parameter University of Stuttgart Institute for Energy Transmission and High Voltage Engineering Philipp Hillenbrand