2SD667, 2SD667A. Silicon NPN Epitaxial. ADE (Z) 1st. Edition Mar Application. Outline
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1 Silicon NPN Epitaxial ADE (Z) 1st. Edition Mar. 1 Application Low frequency power amplifier Complementary pair with SB647/A Outline TO-9MOD 1. Emitter. Collector 3. Base 3 1
2 Absolute Maximum Ratings (Ta = C) Item Symbol SD667 SD667A Unit Collector to base voltage V CBO 1 1 V Collector to emitter voltage V CEO 8 1 V Emitter to base voltage V EBO V Collector current I C 1 1 A Collector peak current i C(peak) A Collector power dissipation P C.9.9 W Junction temperature Tj 1 1 C Storage temperature Tstg to +1 to +1 C Electrical Characteristics (Ta = C) SD667 SD667A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 1 1 V I C = 1 µa, I E = Collector to emitter breakdown voltage Emitter to base breakdown voltage V (BR)CEO 8 1 V I C = 1 ma, R BE = V (BR)EBO V I E = 1 µa, I C = Collector cutoff current I CBO 1 1 µa V CB = 1 V, I E = DC current transfer ratio h FE1 * V CE = V, I C = 1 ma* Collector to emitter saturation voltage h FE 3 3 V CE = V, I C = ma* V CE(sat) 1 1 V I C = ma, I B = ma* Base to emitter voltage V BE V V CE = V, I C = 1 ma* Gain bandwidth product f T MHz V CE = V, I C = 1 ma* Collector output capacitance Cob 1 1 pf V CB = 1 V, I E =, f = 1 MHz Notes: 1. The SD667 and SD667A are grouped by h FE1 as follows.. Pulse test B C D SD667 6 to 1 1 to 16 to 3 SD667A 6 to 1 1 to
3 Collector Power Dissipation P C (W) Maximum Collector Dissipation Curve Ambient Temperature Ta ( C) Collector Current I C (A) Typical Output Characteristics P C =.9 W.mA I B = Collector to Emitter Voltage V CE (V) Typical Transfer Characteristics V CE = V Ta = 7 C Base to Emitter Voltage V BE (V) DC Current Transfer Ratio h FE V CE = V DC Current Transfer Ratio vs. Collector Current Ta = 7 C , 3
4 Collector to Emitter Saturation Voltage V CE(sat) (V) Base to Emitter Saturation Voltage V BE(sat) (V) I C = 1 I B Pulse V BE(sat) V CE(sat) Saturation Voltage vs. Collector Current Ta = C 7 Ta = C , 7 Gain Bandwidth Product f T (MHz) V CE = V Gain Bandwidth Product vs. Collector Current , Collector Output Capacitance C ob (pf) 1 1 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz I E = Collector to Base Voltage V CB (V) 4
5 Package Dimensions As of January, 1 Unit: mm 4.8 ± 3.8 ± 8. ±..6 ±.1.7 Max.6 Max.Max.7.3 Max 1.1 Min.Max Hitachi Code JEDEC EIAJ Mass (reference value) TO-9 Mod Conforms.3 g
6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo 1-4, Japan Tel: Tokyo (3) Fax: (3) URL NorthAmerica : Europe : Asia : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9134 Tel: <1> (48) Fax: <1>(48) Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-86 Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (168) 8 Fax: <44> (168) 816 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #-, Singapore Tel : <6> / Fax : <6> / URL : Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (1), Taiwan Tel : <886>-() Fax : <886>-() Telex : 3 HAS-TP URL : Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <8>-() Fax : <8>-() URL : Copyright Hitachi, Ltd.,. All rights reserved. Printed in Japan. Colophon. 6
7 This datasheet has been download from: Datasheets for electronics components.
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