2SK2393. Silicon N-Channel MOS FET. Application. Features. Outline. High voltage / High speed power switching
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1 SK9 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-PL D G S. Gate. Drain (Flange). Source
2 SK9 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS V Gate to source voltage V GSS ± V Drain current I D 8 A Drain peak current I D(pulse) * A Body to drain diode reverse drain current I DR 8 A Channel dissipation Pch* W Channel temperature Tch C Storage temperature Tstg to + C Notes. PW µs, duty cycle %. Value at Tc = C Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V (BR)DSS V I D = ma, V GS = * voltage Gate to source leak current I GSS ± µa V GS = ± V, V DS = Zero gate voltage drain current I DSS µa V DS = V, V GS = Gate to source cutoff voltage V GS(off).. V I D = ma, V DS = V Static drain to source on state resistance R DS(on).9.8 Ω I D = A V GS = V* Forward transfer admittance y fs.8. S I D = A V DS = V* Input capacitance Ciss 7 pf V DS = V Output capacitance Coss 6 pf V GS = Reverse transfer capacitance Crss pf f = MHz Turn-on delay time t d(on) 7 ns I D = A Rise time t r 8 ns V GS = V Turn-off delay time t d(off) 6 ns R L = 7. Ω Fall time t f ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note. V DF.9 V I F = 8 A, V GS = t rr 6. µs I F = 8 A, V GS =, di F / dt = A / µs
3 SK9 Power vs. Temperature Derating Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature Tc ( C). Operation in this area is limited by R DS(on) ms µs µs PW = ms (shot) DC Operation (Tc = C). Ta = C Drain to Source Voltage V DS (V) 8 6 Typical Output Characteristics V V 8 V 7 V 6 V V GS = V Typical Transfer Characteristics V DS = V Tc = 7 C C C Drain to Source Voltage V DS (V) 6 8 Gate to Source Voltage V GS (V)
4 SK9 Drain to Source Voltage V DS(on) (V) 6 8 Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = A A A 8 6 Gate to Source Voltage V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Drain Current. V GS = V V... Static Drain to Source on State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Temperature I D = A A A V GS = V 8 6 Case Temperature Tc ( C) Forward Transfer Admittance yfs (S).... Forward Transfer Admittance vs. Drain Current Tc = C C 7 C V DS = V..
5 SK9 Reverse Recovery Time trr (µs). Body to Drain Diode Reverse Recovery Time di/dt = A/µs V =, Ta = C GS.. Reverse Drain Current I DR (A) Capacitance C (pf) Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss V GS = f = MHz Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 8 6 V DS Dynamic Input Characteristics I D = 8 A V DD = V V 6 V V GS 6 V DD = V V 6 V 8 6 Gate Charge Qg (nc) 8 Gate to Source Voltage V GS (V) Switching Time t (ns). Switching Characteristics t f V GS = V, V DD = V PW = µs, duty < % t r t d(off) t d(on)..
6 SK9 Reverse Drain Current I DR (A) 8 6 Reverse Drain Current vs. Source to Drain Voltage V V V GS =, V Source to Drain Voltage V SD (V) Switching Time Test Circuit Waveform Vin Monitor D.U.T. R L Vout Monitor Vin % 9% Vin V Ω VDD = V Vout % % 9% 9% td(on) tr td(off) t f 6
7 Unit: mm 6. ±.. ±. φ. ±.. ±. 6. ±.. ±.6. ± ±.. ± ± Hitachi Code JEDEC EIAJ Weight (reference value) TO-PL 9.9 g
8 Cautions. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo -, Japan Tel: Tokyo () 7- Fax: () 7-9 URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 79 East Tasman Drive, San Jose,CA 9 Tel: <> (8) -99 Fax: <>(8) - Hitachi Europe GmbH Electronic components Group Dornacher Stra e D-86 Feldkirchen, Munich Germany Tel: <9> (89) Fax: <9> (89) 9 9 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <> (68) 8 Fax: <> (68) 778 Hitachi Asia Pte. Ltd. 6 Collyer Quay #- Hitachi Tower Singapore 98 Tel: - Fax: - Hitachi Asia Ltd. Taipei Branch Office F, Hung Kuo Building. No.67, Tun-Hwa North Road, Taipei () Tel: <886> () Fax: <886> () Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <8> () 7 98 Fax: <8> () 7 8 Telex: 8 HITEC HX Copyright ' Hitachi, Ltd., 999. All rights reserved. Printed in Japan.
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