HA17080 Series. J-FET Input Operational Amplifiers. Description. Features

Transcription

1 HA Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be used in a wide range of applications, from general-purpose control equipment to medical applications. In particular, they are optimal for processing signals from high-impedance sensors. Hitachi J-FET input operational amplifiers are available in single, dual, and quad versions. Other than the HA, all products are internal phase compensation types and include a built-in phase compensation capacitor. The HA and the HA3 allow offset adjustment. These products are also available in A grade versions with superlative electrical characteristics to allow the selection of an operational amplifier appropriate for the application. Features Wide operating power supply voltage range: ± V to ± V Low input bias current: 3 pa Low input offset current: pa High input impedance: Ω High slew rate: 3 V/µs Wide common mode input voltage range with operation possible near the power-supply voltage ( ). High voltage gain: db The HA and HA3 support offset adjustment. Pin compatible with the Texas Instruments TL series. Notes:. Since these products are high input impedance operational amplifiers, contamination may cause the input bias and input offset currents to increase if they are handled with bare hands. Avoid contamination when handling these devices.. Since these products provide a high slew rate, oscillation may occur due to load capacitances. (C L < pf: voltage follower mode)

2 HA Series Ordering Information Type No. Item HA HA HA3 HA Number of operational amplifiers (number of channels) Single Dual Dual Quad adjustment pin Yes No Yes No Phase compensation type External Internal Internal Internal Pin Arrangement HA HA Null/Comp Vin( ) Vin(+) 3 + Comp Vout Vout Vin( ) Vin(+) Vout Vin( ) Null Vin(+) (Top view) (Top view) HA3 HA Vin( ) Vin(+) 3 Null (N) Vout Vin( ) Vout Vin( ) Null (N) 3 + Vout Vin(+) 3 Vin(+) NC Null (N) + Vout Vin(+) Vin(+)3 Vin(+) Vin( ) 9 Null (N) Vin( ) Vout Vin( )3 Vout3 (Top view) (Top view)

3 HA Series Voltage Test Circuit MΩ Null MΩ Null/Comp + C C N KΩ N Comp + HA3 HA Circuit Structure Vin(+) HA only Vin( ) Null/Comp Null Comp To To Vout Null (N) Null (N) HA3 only Note: The HA does not have an internal phase compensation capacitor. 3

4 HA Series Absolute Maximum Ratings () Item Symbol Ratings (P, PS Series) Unit Notes Power-supply voltage + V V Differential input voltage Vin(diff) ±3 V Input voltage Vin ± V Allowable power dissipation P T mw Operating temperature Topr to + C Storage temperature Tstg to + C Notes:. When the power-supply voltage is less than ± V, the input voltage must fall within the powersupply voltage range.. These are the allowable values up to Ta = C for the P and PS series. Derate by.3 mw/ C above that temperature.

5 HA Series Electrical Characteristics ( = = V, ) HA Series HAA Series Item Symbol Min Typ Max Min Typ Max Unit Test Conditions Notes Input offset voltage V IO 3 mv R S = Ω Input offset current I IO pa I IO = I IB(+) I IB( ) Input bias current I IB 3 3 pa, Common-mode input voltage range Maximum output voltage amplitude V CM ± ± V Vop-p V R L kω R L kω Voltage Gain A VD 9 db R L kω, V O = ± V Common-mode rejection ratio Power supply rejection ratio CMR db R S kω PSRR db R S kω Supply current I CC.... ma 3 Bandwidth BW 3 3 MHz A VD = Slew rate SR 3 3 V/µs Vin = V, R L = kω, C L = pf, A VD = Channel separation CS db A VD = Rise time t r.. µs Vin = mv, R L = kω Overshoot Vover % C L = pf, A VD = Input resistance Rin Ω Input noise voltage Vn 3 3 nv/ Hz R S = Ω, f = khz Notes:. The non-a ratings apply to the HA, HA, HA3, and HA. The A version ratings apply to the HAA, HAA, HA3A, and HAA.. This is the J-FET gate leakage current, which is temperature dependent. The junction temperature must be held near room temperature when measuring this parameter. 3. This is the per-channel value.

6 HA Series Characteristic Curves Input bias current I IB (pa) k k V CM = V Input Bias Current vs. Ambient Temperature Input bias current I IB (pa) Input Bias Current vs. Common-Mode Input Voltage Maximum output voltage amplitude V OP-P (V) Maximum output voltage amplitude V OP-P (V) Ambient temperature Ta ( C) 3 Maximum Output Voltage Amplitude vs. Frequency R L = kω kω k k k M M 3 Maximum Output Voltage Amplitude vs. Load Resistance.... Load resistance R L (kω) Maximum output voltage amplitude V OP-P (V) Maximum output voltage amplitude V OP-P (V) Common-mode input voltage V CM (V) 3 R L = kω kω Ambient temperature Ta ( C) 3 Maximum Output Voltage Amplitude vs. Ambient Temperature Maximum Output Voltage Amplitude vs. Power-Supply Voltage R L = kω ±3 ± ±9 ± ± ± Power-supply voltage, (V)

7 HA Series Voltage gain A VD (db) Voltage Gain vs. Frequency () Voltage Gain vs. Frequency () R L = kω C L = 3 pf Voltage gain A VD (db) k k k M M k k k M M Voltage gain A VD (db) Voltage Gain vs. Ambient Temperature R L = kω Input noise voltage Vn (nv/ Hz) Input Noise Voltage vs. Frequency R S = Ω k k k Ambient temperature Ta ( C) Common-mode rejection ratio CMR (db) Common-Mode Rejection Ratio vs. Frequency Power-supply rejection ratio PSRR (db) Power-Supply Rejection Ratio vs. Frequency k k k M M k k k M M

8 HA Series Supply current I CC ± (ma).... Supply current vs. Power-Supply Voltage.... No signal No load Per channel ±3 ± ±9 ± ± ± Power-supply voltage, (V) Ambient temperature Ta ( C) Supply current I CC ± (ma).... Supply current vs. Ambient Temperature Power dissipation Pd (mw) No signal No load Power Dissipation vs. Power-Supply Voltage Power dissipation Pd (mw) Power Dissipation vs. Ambient Temperature = V Per channel No signal No load ±3 ± ±9 ± ± ± Power-supply voltage, (V) Ambient temperature Ta ( C) Output Voltage Vout (V) Voltage Follower Large Signa Pulse Response Output Input R L = kω C L = pf Output Voltage Vout (V) HA3 Adjustment R S = Ω Rf =. kω R = kω Time t (µs) Resistor position a (%)

9 HA Series Package Dimensions Unit: mm 9.. Max.3. Max.9.3. Max. Min. Min. Max. ±.. ± Hitachi Code JEDEC EIAJ Mass (reference value) DP- Conforms Conforms. g Unit: mm 9..3 Max.3. Max.3.39 Max. ±.. ±.. Min. Min. Max Hitachi Code JEDEC EIAJ Mass (reference value) DP- Conforms Conforms.9 g 9

10 HA Series Cautions. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant.. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., --, Ohte-machi, Chiyoda-ku, Tokyo -, Japan Tel: Tokyo (3) 3- Fax: (3) 3-9 URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 9 East Tasman Drive, San Jose,CA 93 Tel: <> () Fax: <>() 33-3 Hitachi Europe GmbH Electronic components Group Dornacher Straβe 3 D- Feldkirchen, Munich Germany Tel: <9> (9) 9 9- Fax: <9> (9) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL YA, United Kingdom Tel: <> () Fax: <> () 3 Hitachi Asia Pte. Ltd. Collyer Quay #- Hitachi Tower Singapore 93 Tel: 3- Fax: 3-33 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No., Tun-Hwa North Road, Taipei () Tel: <> () -3 Fax: <> () - Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) /F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <> () 3 9 Fax: <> () 3 Telex: HITEC HX Copyright ' Hitachi, Ltd., 99. All rights reserved. Printed in Japan.