2SC1345. Silicon NPN Epitaxial. Application. Outline. Absolute Maximum Ratings. REJ03G (Previous ADE A) Rev.3.00 Sep.10.

Transcription

1 SC5 Silicon NPN Epitaxial REJG7- (Previous ADE--5A) Rev.. Sep..5 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSSDA-A (Package name: TO-9 ()). Emitter. Collector. Base Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Collector to base voltage V CBO 55 V Collector to emitter voltage V CEO 5 V Emitter to base voltage V EBO 5 V Collector current I C ma Collector power dissipation P C mw Junction temperature Tj 5 C Storage temperature Tstg 55 to +5 C Rev.. Aug, 5 page of

2 SC5 Electrical Characteristics Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 55 V I C = µa, I E = Collector to emitter breakdown voltage V (BR)CEO 5 V I C = ma, R BE = Emitter to base breakdown voltage V (BR)EBO 5 V I E = µa, I C = Collector cutoff current I CBO.5 µa V CB = V, I E = Emitter cutoff current I EBO.5 µa V EB = V, I C = DC current transfer ratio h FE * 5 V CE = V, I C = ma Base to emitter voltage V BE.75 V V CE = V, I C = ma Collector to emitter saturation voltage V CE(sat).5 V I C = ma, I B = ma Gain bandwidth product f T MHz V CE = V, I C = ma Collector output capacitance Cob.5 pf V CB = V, I E =, f = MHz Noise figure NF db V CE = V, I C =. ma, f = Hz, R g = kω Note:. The SC5 is grouped by h FE as follows. D E F 5 to 5 to to V CE = V, I C =. ma, f = khz, R g = kω (Ta = 5 C) Small Signal h Parameters (V CE = 5V, I C =. ma, f = 7 Hz, Ta = 5 C, Emitter common) Item Symbol D E F Unit Input impedance hie 7 kω Voltage feedback ratio hre Current transfer ratio hfe 5 5 Output admittance hoe..5.5 µs Rev.. Aug, 5 page of

3 SC5 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics Collector Power Dissipation P C (mw) µa I B = PC = mw Ambient Temperature Ta ( C) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 7 5 DC Current Transfer Ratio h FE 5 V CE = V Ta = 75 C 5 V CE = V Base to Emitter Voltage V BE (V) Base to Emitter Voltage vs. Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage Base to Emitter Voltage V BE (V) V CE = V I C = ma Collector Output Capacitance C ob (pf) 5 I E = f= MHz 5 Ambient Temperature Ta ( C) Collector to Base Voltage V CB (V) Rev.. Aug, 5 page of

4 SC5 Emitter Input Capacitance vs. Emitter to Base Voltage Contours of Constant Noise Figure Emitter Input Capacitance C ie (pf) 5 I C = f= MHz 5 Signal Source Resistance R g (kω) db db db.. db db.... db db db db db V CE = V f = Hz..... Emitter to Base Voltage V EB (V) Contours of Constant Noise Figure Contours of Constant Noise Figure Signal Source Resistance R g (kω).. db db db db.... db db db db V CE = V f = Hz..... Signal Source Resistance R g (kω).... db. V CE = V f = khz db db db. db db db db db db..... Noise Figure vs. Frequency Noise Figure vs. Collector to Emitter Voltage V CE = V I C =. ma R g = kω I C =. ma f = Hz R g = kω 5 5 k Frequency f (Hz) 5 5 Rev.. Aug, 5 page of

5 SC5 Noise Figure vs. Collector to Emitter Voltage Noise Figure vs. Collector to Emitter Voltage I C =. ma f = Hz R g = kω I C =. ma f = khz R g = kω Rev.. Aug, 5 page 5 of

6 SC5 Package Dimensions JEITA Package Code SC-A RENESAS Code PRSSDA-A Package Name TO-9() / TO-9()V MASS[Typ.].5g Unit: mm. ±.. ±. 5. ±.. Max.55 Max.7. Max.7 Min.5 Max.7.5 Ordering Information Part Name Quantity Shipping Container SC5ETZ-E SC5FTZ-E 5 Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.. Aug, 5 page of

7 Sales Strategic Planning Div. Nippon Bldg., --, Ohte-machi, Chiyoda-ku, Tokyo -, Japan Keep safety first in your circuit designs!. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to " for the latest and detailed information. Renesas Technology America, Inc. 5 Holger Way, San Jose, CA 95-, U.S.A Tel: <> () -75, Fax: <> () -75 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL 5FH, U.K. Tel: <> () 55-, Fax: <> () 55-9 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <5> 5-, Fax: <5> 7-7 Renesas Technology Taiwan Co., Ltd. th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <> () 75-, Fax: <> () Renesas Technology (Shanghai) Co., Ltd. Unit7 Ruijing Building, No.5 Maoming Road (S), Shanghai, China Tel: <> () 7-, Fax: <> () 5-95 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #-, Keppel Bay Tower, Singapore 9 Tel: <5> -, Fax: <5> 7- Renesas Technology Korea Co., Ltd. Kukje Center Bldg. th Fl., 9, -ka, Hangang-ro, Yongsan-ku, Seoul -7, Korea Tel: <> -79-5, Fax: <> Renesas Technology Malaysia Sdn. Bhd. Unit 9, Block B, Menara Amcorp, Amcorp Trade Centre, No., Jalan Persiaran Barat, 5 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <> , Fax: <> Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon..