BCR8CM-12L. Triac. Medium Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Aug

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1 BCR8CM-1L Triac Medium Power Use REJG9-1 Rev.1. ug.. Features I T (RMS) : 8 V DRM : 6 V I FGTI, I RGTI, I RGTⅢ : m ( m) Note6 Non-Insulated Type Planar Passivation Type Outline TO- 1, 1 1. T 1 Terminal. T Terminal. Gate Terminal. T Terminal pplications Contactless C switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltage Note1 V DRM 6 V Non-repetitive peak off-state voltage Note1 V DSM V 1 Unit Rev.1., ug.., page 1 of 1

2 BCR8CM-1L Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 8 Commercial frequency, sine full wave 6 conduction, Tc = 1 C Note Surge on-state current I TSM 8 6Hz sinewave 1 full cycle, peak value, non-repetitive I t for fusing I t 6 s Value corresponding to 1 cycle of half wave 6Hz,surge on-state current Peak gate power dissipation P GM W verage gate power dissipation P G (V). W Peak gate voltage V GM 1 V Peak gate current I GM Junction temperature Tj to +1 C Storage temperature Tstg to +1 C Mass. g Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM. m Tj = 1 C, V DRM applied On-state voltage V TM 1. V Tc = C, I TM = 1, Instantaneous measurement Gate trigger voltage Note Gate trigger current Note Ι V FGTΙ 1. V ΙΙ V RGTΙ 1. V ΙΙΙ V RGTΙΙΙ 1. V Ι I FGTΙ Note6 m ΙΙ I RGTΙ Note6 m ΙΙΙ I RGTΙΙΙ Note6 m Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Gate non-trigger voltage V GD. V Tj = 1 C, V D = 1/ V DRM Thermal resistance R th (j-c). C/W Junction to case Critical-rate of rise of off-state (dv/dt)c 1 V/µs Tj = 1 C commutating voltage Note Note Note Notes:. Measurement using the gate trigger characteristics measurement circuit.. Case temperature is measured at the T tab 1. mm away from the molded case.. The contact thermal resistance R th (c-f) in case of greasing is 1. C/W.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 6. High sensitivity (I GT m) is also available. (I GT item: 1) Test conditions 1. Junction temperature Tj = 1 C. Rate of decay of on-state commutating current (di/dt)c =. /ms. Peak off-state voltage V D = V Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c (di/dt)c V D Rev.1., ug.., page of 1

3 BCR8CM-1L Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current () Tj = C Tj = 1 C Surge On-State Current () On-State Voltage (V) Conduction (Cycles at 6Hz) Gate Voltage (V) Gate Characteristics (I, II and III) V GM = 1V P G(V) =.W 1 1 P GM = W I GM = V GT = 1.V 1 I 1 1 FGT I I RGT I, I RGT III V GD =.V Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) 1 1 Gate Trigger Current vs. I RGT I, IFGT I I RGT III Gate Current (m) ( C) Gate Trigger Voltage (Tj = t C) Gate Trigger Voltage (Tj = C) Gate Trigger Voltage vs Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) ( C) Conduction (Cycles at 6Hz) Rev.1., ug.., page of 1

4 BCR8CM-1L Maximum On-State Power Dissipation llowable Case Temperature vs. RMS On-State Current On-State Power Dissipation (W) Conduction Resistive, inductive loads Case Temperature ( C) Curves apply regardless of conduction angle 6 Conduction Resistive, inductive loads RMS On-State Current () RMS On-State Current () llowable mbient Temperature vs. RMS On-State Current llowable mbient Temperature vs. RMS On-State Current mbient Temperature ( C) ll fins are black painted aluminum and greased 1 1 t. 1 1 t. 6 6 t. 6 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection mbient Temperature ( C) Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads RMS On-State Current () RMS On-State Current () Repetitive Peak Off-State Current (Tj = t C) Repetitive Peak Off-State Current (Tj = C) 1 1 Repetitive Peak Off-State Current vs ( C) Holding Current (Tj = t C) Holding Current (Tj = C) Holding Current vs ( C) Rev.1., ug.., page of 1

5 BCR8CM-1L Latching Current vs. Breakover Voltage vs. Latching Current (m) 1 1 Distribution T +, G 1 1 T +, G + T, G Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) ( C) ( C) Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 16 1 Tj = 1 C 1 I Quadrant III Quadrant Rate of Rise of Off-State Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics Main Voltage (dv/dt)c V D Main Current IT (di/dt)c τ Minimum Characteristics Value III Quadrant Tj = 1 C I T = τ = µs V D = V f = Hz I Quadrant 1 Rate of Decay of On-State Commutating Current (/ms) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Characteristics Test Circuits Gate Trigger Current (tw) Gate Trigger Current (DC) 1 1 I FGT I I RGT I I RGT III Ω 6V V Ω Test Procedure I 6Ω 6V V Ω 6Ω 6V V Ω Test Procedure II Gate Current Pulse Width (µs) Test Procedure III Rev.1., ug.., page of 1

6 BCR8CM-1L Package Dimensions TO- EIJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms. Cu alloy max. ±.. φ.6 ±. 1. min.8 max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.. Symbol 1 b D E e x y Dimension in Millimeters Min Typ Max y 1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 1 Type name + BCR8CM-1L Lead form Plastic Magazine (Tube) Type name + Lead forming code BCR8CM-1L-8 Note : Please confirm the specification about the shipping in detail. Rev.1., ug.., page 6 of 1

7 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) BCR8CM-1L Triac Medium Power Use (The product guaranteed maximum junction temperature of 1 C) Features I T (RMS) : 8 V DRM : 6 V I FGTI, I RGTI, I RGTⅢ : m ( m) Note6 Non-Insulated Type Planar Passivation Type Outline TO- 1, 1 1. T 1 Terminal. T Terminal. Gate Terminal. T Terminal pplications Contactless C switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using.. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 1 C will be supplied. Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltage Note1 V DRM 6 V Non-repetitive peak off-state voltage Note1 V DSM V 1 Unit Rev.1., ug.., page of 1

8 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 8 Commercial frequency, sine full wave 6 conduction, Tc = 1 C Note Surge on-state current I TSM 8 6Hz sinewave 1 full cycle, peak value, non-repetitive I t for fusing I t 6 s Value corresponding to 1 cycle of half wave 6Hz, surge on-state current Peak gate power dissipation P GM W verage gate power dissipation P G (V). W Peak gate voltage V GM 1 V Peak gate current I GM Junction temperature Tj to +1 C Storage temperature Tstg to +1 C Mass. g Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM. m Tj = 1 C, V DRM applied On-state voltage V TM 1. V Tc = C, I TM = 1, Instantaneous measurement Gate trigger voltage Note Ι V FGTΙ 1. V Tj = C, V D = 6 V, R L = 6 Ω, ΙΙ V RGTΙ 1. V R G = Ω Gate trigger current Note ΙΙΙ V RGTΙΙΙ 1. V Ι I FGTΙ Note6 m ΙΙ I RGTΙ Note6 m ΙΙΙ I RGTΙΙΙ Note6 m Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Gate non-trigger voltage V GD./.1 V Tj = 1 C/1 C, V D = 1/ V DRM Thermal resistance R th (j-c). C/W Note Note Junction to case Critical-rate of rise of off-state (dv/dt)c 1/1 V/µs Tj = 1 C/1 C commutating voltage Note Notes:. Measurement using the gate trigger characteristics measurement circuit.. Case temperature is measured at the T tab 1. mm away from the molded case.. The contact thermal resistance R th (c-f) in case of greasing is 1. C/W.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 6. High sensitivity (I GT m) is also available. (I GT item: 1) Test conditions 1. Junction temperature Tj = 1 C/1 C. Rate of decay of on-state commutating current (di/dt)c =. /ms. Peak off-state voltage V D = V Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c (di/dt)c V D Rev.1., ug.., page 8 of 1

9 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current () Tj = 1 C 1 Tj = C Surge On-State Current () On-State Voltage (V) Conduction (Cycles at 6Hz) Gate Voltage (V) Gate Characteristics (I, II and III) V GM = 1V P G(V) =.W V GT = 1.V P GM = W I GM = 1 1 IFGT I I RGT I, IRGT III V GD =.1V Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) 1 1 Gate Trigger Current vs. I RGT III I FGT I, I RGT I Gate Current (m) ( C) Gate Trigger Voltage (Tj = t C) Gate Trigger Voltage (Tj = C) 1 1 Gate Trigger Voltage vs Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) ( C) Conduction (Cycles at 6Hz) Rev.1., ug.., page 9 of 1

10 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Maximum On-State Power Dissipation llowable Case Temperature vs. RMS On-State Current On-State Power Dissipation (W) Conduction Resistive, inductive loads Case Temperature ( C) Curves apply regardless of conduction angle 6 Conduction Resistive, inductive loads RMS On-State Current () RMS On-State Current () llowable mbient Temperature vs. RMS On-State Current llowable mbient Temperature vs. RMS On-State Current mbient Temperature ( C) t. 1 1 t. 6 6 t. 6 Curves apply regardless of conduction angle Resistive, ll fins are black inductive loads painted aluminum Natural convection and greased mbient Temperature ( C) Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads RMS On-State Current () RMS On-State Current () Repetitive Peak Off-State Current (Tj = t C) Repetitive Peak Off-State Current (Tj = C) 1 6 Repetitive Peak Off-State Current vs ( C) Holding Current (Tj = t C) Holding Current (Tj = C) Holding Current vs ( C) Rev.1., ug.., page 1 of 1

11 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Latching Current vs. Breakover Voltage vs. Latching Current (m) 1 1 Distribution T +, G 1 1 T +, G+ T, G Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) ( C) ( C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=1 C) 16 1 Tj = 1 C Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=1 C) 16 1 Tj = 1 C Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) I Quadrant III Quadrant Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) I Quadrant III Quadrant Rate of Rise of Off-State Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=1 C) 1 1 Main Voltage (dv/dt)c V D Main Current IT (di/dt)c τ Minimum Characteristics Value III Quadrant Tj = 1 C I T = τ = µs V D = V f = Hz I Quadrant Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=1 C) Main Voltage (dv/dt)c V D Main Current IT (di/dt)c τ I Quadrant III Quadrant Tj = 1 C I T = τ = µs V D = V f = Hz Minimum Characteristics Value 1 Rate of Decay of On-State Commutating Current (/ms) Rate of Decay of On-State Commutating Current (/ms) Rev.1., ug.., page 11 of 1

12 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) Gate Trigger Current (DC) 1 1 I FGT I I RGT I I RGT III Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values round The Triac 6Ω 6Ω Load C 1 6V V Ω Test Procedure I 6Ω 6V V Ω Test Procedure II R 1 C 1 =.1 to.µf R 1 = to 1Ω C R C =.1µF R = 1Ω 6V V Ω Test Procedure III Rev.1., ug.., page 1 of 1

13 BCR8CM-1L (The product guaranteed maximum junction temperature of 1 C) Package Dimensions TO- EIJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms. Cu alloy max. ±.. φ.6 ±. 1. min.8 max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.. Symbol 1 b D E e x y Dimension in Millimeters Min Typ Max y 1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 1 Type name +B BCR8CM-1LB Lead form Plastic Magazine (Tube) Type name +B Lead forming code BCR8CM-1LB-8 Note : Please confirm the specification about the shipping in detail. Rev.1., ug.., page 1 of 1

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