BCR16A, BCR16B, BCR16C, BCR16E
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- Arnold Kennedy
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1 MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm φ. MIN φ. MIN 4 MX φ8. MX 6. MX 9 MX φ. MX MX IT (RMS)... 6 DRM...4/ IFGT!, IT!, IT #... m T TERMINL T TERMINL GTE TERMINL BCR6 PPLICTION Contactless C switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens MXIMUM RTINGS DRM DSM Repetitive peak off-state voltage Non-repetitive peak off-state voltage oltage class IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave, 6 conduction Conditions BCR6, B, C BCR6E 6Hz sinewave full cycle, peak value, non-repetitive Tc=99 Tb= Ratings 6 I t I t for fusing alue corresponding to cycle of half wave 6Hz, surge on-state current s PGM PG () Peak gate power dissipation verage gate power dissipation. W W GM Peak gate voltage IGM Tj Peak gate current Junction temperature ~ +. Gate open. Feb.999
2 MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE MXIMUM RTINGS (continue) Tstg Storage temperature Ratings ~ + BCR6. Weight (Typical value) BCR6B BCR6C g Soldering temperature BCR6E BCR6 only, sec. 9. Mounting torque BCR6C only (Typical value).94 kg cm N m iso Isolated voltage BCR6E only, Ta=, C minute, T Terminal to base ELECTRICL CHRCTERISTICS IDRM Repetitive peak off-state current Tj=, DRM applied Min. Limits Typ. Max.. m TM On-state voltage Tc=, Tb= (BCR6E only), ITM=, Instantaneous measurement.6 FGT! T! T # IFGT! IT! IT # GD Rth (j-c) Rth (j-b) Gate trigger voltage Gate trigger current Gate non-trigger voltage Thermal # Tj=, D=6, RL=, =Ω Tj=, D=6, RL=, =Ω Tj=, D=/DRM Junction to case (BCR6, BCR6B, BCR6C) Junction to base (BCR6E) m m m /W /W (dv/dt)c Critical-rate of rise of off-state commutating voltage /µs. Measurement using the gate trigger characteristics measurement circuit.. The critical-rate of rise of the off-state commutating voltage is shown in the table below. oltage class DRM () (dv/dt) c Min. Commutating voltage and current waveforms (inductive load) 8 4 R L R L /µs. Junction temperature Tj=. Rate of decay of on-state commutating current (di/dt)c= 8/ms. Peak off-state voltage D=4 SUPPLY OLTGE MIN CURRENT MIN OLTGE (dv/dt)c (di/dt)c D Feb.999
3 MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm -φ. MIN BCR6B BCR6C -φ. MIN BCR6E. MX MX 4 MX MX T TERMINL T TERMINL GTE TERMINL φ. MIN. MX φ8. MX ±. MX.8 MX 8 MX. MX (6.) φ. MIN MX 6 MX.9 MX φ8. MX MIN 8. MX MX M6. 6 MX φ. MIN φ. MIN (φ6) ±. φ MX φ. MIN φ8. MX.8 MX MX MX PERFORMNCE CURES MXIMUM ON-STTE CHRCTERISTICS ON-STTE CURRENT () TC = Tb = ON-STTE OLTGE () SUE ON-STTE CURRENT () RTED SUE ON-STTE CURRENT 4 4 (CYCLES T 6Hz) GTE OLTGE () GTE CHRCTERISTICS GM = PG() =.W PGM =.W IGM = GT =. IFGT I, IT I, IT III GD =. 4 GTE CURRENT (m) (%) GTE TRIGGER CURRENT OLTGE (Tj = t) GTE TRIGGER CURRENT OLTGE (Tj = ) GTE TRIGGER CURRENT OLTGE S. JUNCTION TEMPERTURE TEST PROCEDURE Ι, ΙΙ ND ΙΙΙ GTE TRIGGER CURRENT GTE TRIGGER OLTGE JUNCTION TEMPERTURE () Feb.999
4 MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE TRNSIENT THERML IMPEDNCE (/W) MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO CSE) (BCR6, B, C) TRNSIENT THERML IMPEDNCE (/W) MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO BSE) (BCR6E) (CYCLES T 6Hz) (CYCLES T 6Hz) ON-STTE POWER DISSIPTION (W) 4 MXIMUM ON-STTE POWER DISSIPTION 6 CONDUCTION RESISTIE, INDUCTIE LODS CSE TEMPERTURE () LLOWBLE CSE TEMPERTURE S. RMS ON-STTE CURRENT CURES PPLY REGRDLESS OF CONDUCTION NGLE BCR6, BCR6B, BCR6C BCR6E 4 6 CONDUCTION RESISTIE, INDUCTIE LODS MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6) t4. 4 t. 8 8 t. LL FINS RE BLCK PINTED LUMINUM ND GRESED 8 CURES PPLY REGRDLESS 6 OF CONDUCTION NGLE 4 NTURL CONECTION WITH SOLDER : MOUNTING PLTE WITHOUT GRESE MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6B) 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED t4. t. 8 8 t. 8 CURES PPLY REGRDLESS 6 OF CONDUCTION NGLE 4 NTURL CONECTION WITHOUT GRESE : INSULTED PLTE WITH GRESE Feb.999
5 MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6C) 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED 4 NTURL CONECTION 6 6 t4. t. 8 8 t. 8 CURES PPLY 6 REGRDLESS OF CONDUCTION 4 NGLE WITH GRESE : MIC PLTE WITH GRESE MBIENT TEMPERTURE () 6 4 LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6E) 8 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED RESISTIE, INDUCTIE LODS NTURL CONECTION 6 6 t4. t. 8 8 t. 4 CURES PPLY REGRDLESS OF CONDUCTION NGLE GTE TRIGGER CHRCTERISTICS TEST CIRCUITS 6 6 TEST PROCEDURE TEST PROCEDURE 6 TEST PROCEDURE Feb.999
BCR5KM. APPLICATION Control of heater such as electric rice cooker, electric pot. BCR5KM OUTLINE DRAWING Dimensions in mm
Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm ±..8 ±. 1 ±. ±. 6. ±. φ. ±. 1 ±..6 ±. 1.1 ±. 1.1 ±. E. ±.. ±.1. ±.. ±.1 IT (RMS)... DRM...
More informationUnit IT (RMS) ITSM. Conditions. Commercial frequency, sine full wave 360 conduction, Tc=98 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING Dimensions in mm MX TYPE NME CLSS.±.. MIN. MX. MX.. φ.6±. 1.. 1.....6. IT (RMS)... DRM.../ IFGT!, IT!, IT #... m (m) 1 1 1T1 TERMINL T TERMINL GTE TERMINL T TERMINL TO- Measurement point
More informationConditions Commercial frequency, sine full wave 360 conduction, Tc=56 C 4 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ... IT (RMS)... DRM... 6 IFGT!, IT!, IT #... m IFGT #...m JEDEC : TO-9..9 MX PPLICTION
More informationConditions. Unit IT (RMS) ITSM. Commercial frequency, sine full wave 360 conduction, Tc=86 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING MX Dimensions in mm φ.±.1 TYPE NME CLSS 8 MX 1.±.1.8.8.±..7± MX 1 MIN.. MIN. MX 1 Measurement point of case temperature IT (RMS)... DRM.../6 IFGT!, IT!, IT #... m (1m) 6 ±.1 MX 1T1 TERMINL
More informationConditions Commercial frequency, sine full wave 360 conduction, Tc=103 C 3. Unit A ITSM. 60Hz sinewave 1 full cycle, peak value, non-repetitive
Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm TYPE NME CLSS 1. MX 6..±..9 MX 1.... MIN.±. 1.±. MX.±..8.±.1. Measurement point of case temperature
More informationIT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationIT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
More informationAPPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.
TMR-M,-H TMR-M,-H PPLICTION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRWING & CIRCUIT DIGRM 1 4.6 K1 K
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Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
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QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E6 (N) File No. E1 PPLICTION Inverters, C servo drives, UPS, motor
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QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe DC current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, DC
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QMHY-H QMHY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
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BCR16PM-1L Triac Medium Power Use REJG6-1 Rev.1. ug.. Features I T (RMS) : 16 V DRM : 6 V I FGTI, I RGTI, I RGTⅢ : m ( m) Note Viso : 1 V Insulated Type Planar Passivation Type UL Recognized : Yellow Card
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BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon
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SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY ISOLTED PCKGE : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The and Family Silicon Controlled Rectifiers
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Qxx15xx & Qxx16xHx Series RoHS Description The 15 mp and 16 mp bi-directional solid state switch series are designed for C switching and phase control applications such as motor speed, temperature modulation
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CUTION / RNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes
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More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
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