MOS FIELD EFFECT POWER TRANSISTORS 2SJ495

Transcription

1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super Low On-State Resistance RDS(on)1 = 3 mω MAX. (VGS = 1 V, ID = 15 A) RDS(on)2 = 56 mω MAX. (VGS = 4 V, ID = 15 A) Low Ciss Ciss = 412 pf TYP. Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 6 V Gate to Source Voltage* VGSS(AC) m2 V Gate to Source Voltage VGSS(DC) 2, V Drain Current (DC) ID(DC) m3 A Drain Current (pulse)** ID(pulse) m12 A Total Power Dissipation (TC = 25 C) PT 35 W Total Power Dissipation (TA = 25 C) PT 2. W Channel Temperature Tch 15 C Storage Temperature Tstg 55 to +15 C *f = 2 khz, Duty Cycle 1% (+Side) **PW 1 µs, Duty Cycle 1% THERMAL RESISTANCE Channel to Case Rth(ch-c) 3.57 C/W Channel to Ambient Rth(ch-A) 62.5 C/W 15. ±.3 PACKAGE DIMENSIONS (in millimeter) 1. ± ± ± ±.2.7 ± ± ± ±.2.65 ± ±.2 3 ± ± MIN. 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-22) Drain Gate Body Diode Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11267EJ2VDS (2nd edition) Date Published November 1997 N Printed in Japan 1997

2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On state Resistance RDS(on)1 VGS = 1 V, ID = 15 A 24 3 mω RDS(on)2 VGS = 4 V, ID = 15 A mω Gate to Source Cutoff Voltage VGS(off) VDS = 1 V, ID = 1 ma V Forward Transfer Admittance yfs VDS = 1 V, ID = 15 A S Drain Leakage Current IDSS VDS = 6 V, VGS = 1 µa Gate to Source Leakage Current IGSS VGS = m 2 V, VDS = m1 µa Input Capacitance Ciss VDS = 1 V 412 pf Output Capacitance COSS VGS = 175 pf Reverse Transfer Capacitance Crss f = 1 MHz 58 pf Turn-On Delay Time td(on) ID = 15 A 4 ns Rise Time tr VGS(on) = 1 V 22 ns Turn-Off Delay Time td(off) VDD = 3 V 6 ns Fall Time tf RG = 1 Ω 38 ns Total Gate Charge QG ID = 3 A 14 nc Gate to Source Charge QGS VDD = 48 V 12 nc Gate to Drain Charge QGD VGS = 1 V 46 nc Body Diode Forward Voltage VF(S-D) IF = 3 A, VGS = V Reverse Recovery Time trr IF = 3 A, VGS = 16 ns Reverse Recovery Charge Qrr di/dt = 1 A/µs 4 nc Test Circuit 1 Switching Time Test Circuit 2 Gate Charge VGS PG. D.U.T. RG RG = 1 Ω RL VDD VGS Wave Form ID Wave Form VGS 1 % D ID 9 % VGS(on) ID 9 % 9 % 1 % 1 % PG. D.U.T. IG = 2 ma 5 Ω RL VDD t td(on) tr td(off) tf t = 1 µ s Duty Cycle 1% ton toff 2

3 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA TC = 25 C Single Pulse 1.1 RDS(on) Limited (at VGS =1 V) ID(DC) ID(pulse) Power Dissipation Limited DC 1 ms 1 ms 1 ms VDS - Drain to Source Voltage - V 5 s µ DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V VGS = 4 V VDS - Drain to Source Voltage - V 1 FORWARD TRANSFER CHARACTERISTICS Tch = 25 C 25 C 125 C VDS = 1 V VGS - Gate to Source Voltage - V 3

4 1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 62.5 C/W Rth(ch-c) = 3.57 C/W Single Pulse.1 1 µ 1 µ 1 m 1 m 1 m PW - Pulse Width - s yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Tch= 25 C 25 C 75 C 125 C ID- Drain Current - A VDS = 1 V 1 1 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 15 A 2 3 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 VGS = 4 V VGS = 1 V 1 1 VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 1 V ID = 1 ma Tch - Channel Temperature - C 4

5 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - C VGS = 4 V VGS=-1 V ID = 15 A ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 4 V 1. VGS = VSD - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = f = 1 MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS td(off) tf tr VDD = 3 V td(on) VGS = 1 V RG =1 Ω VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A di/dt = 5 A/ µ s VGS = VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 ID = 3A VDD= 48 V 3 V 15 V VDS QG - Gate Charge - nc VGS VGS - Gate to Source Voltage - V 5

6 Document Name NEC semicondacter device reliabilty/quality control system Power MOS FET features and application to switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) Document No. C11745E D12971E TEA-135 TEA-137 C11892E 6

7 [MEMO] 7

8 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5