M54516P MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

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1 -UNIT DARLINGTON TRANSISTOR ARRAY DESCRIPTION is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES Medium breakdown voltage (BCEO 2) High-current driving (Ic(max) = ) Driving available with PMOS IC output Wide operating temperature range (Ta = 2 to +7 C) PIN CONFIGURATION NC 1 IN1 2 IN2 3 IN3 4 IN4 IN 6 GND 7 Package type 14P4(P) 14 NC 13 O1 12 O2 11 O3 1 O4 9 O 8 NC NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 2K 2K 2K GND FUNCTION The has five circuits consisting of NPN Darlington transistors. These ICs have resistance of 2kΩ between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 7). Collector current is maximum. Collector-emitter supply voltage is 2 maximum. The five circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. : Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = 2 ~ +7 C) Conditions Ratings CEO IC I Pd Topr Tstg Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Output, H Current per circuit output, L, when mounted on board. ~ +2. ~ ~ +7 ~ +12 W C C Jan. 2

2 -UNIT DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 2 ~ +7 C) O IC Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Duty Cycle no more than 1% Duty Cycle no more than % min typ max IH IL H input voltage L input voltage IC 4 IC ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 2 ~ +7 C) (BR) CEO II CE (sat) hfe Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current DC amplification factor Test conditions ICEO = 1µA I = 8, IC = 4 I =, IC = 2 I = 17 CE = 4, IC = 4, min typ* max * : The typical values are those measured under ambient temperature (Ta) of 2 C. There is no guarantee that these values are obtained under any conditions SWITCHING CHARACTERISTICS (Unless otherwise noted, ) Test conditions min typ max ton toff Turn-on time Turn-off time CL = 1pF (note 1) 4 ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM O Measured device RL % % PG Ω CL % % ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 1µs, tr = 6ns, tf = 6ns, ZO = Ω P = 8P-P (2) Input-output conditions : RL = 2Ω, O = 1 (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2

3 -UNIT DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS 2. Thermal Derating Factor Characteristics Output Saturation oltage Collector Current Characteristics Power dissipation Pd (W) I = Ta = 2 C Ambient temperature Ta ( C) Output saturation voltage CE (sat) () Duty-Cycle-Collector Characteristics ➀ Duty-Cycle-Collector Characteristics The collector current values represent the current per circuit. Repeated frequency 1Hz The value in the circle represents the value of the simultaneously-operated circuit ➁ ➂ ➃ ➄ The collector current values represent the current per circuit. Repeated frequency 1Hz The value in the circle represents the value of the simultaneously-operated circuit. ➀ ➁ ➂ ➃ ➄ Duty cycle (%) Duty cycle (%) DC amplification factor hfe DC Amplification Factor Collector Current Characteristics CE = 4 Ta = 2 C Grounded Emitter Transfer Characteristics CE = 4 Ta = 2 C Input voltage I () Jan. 2

4 -UNIT DARLINGTON TRANSISTOR ARRAY 2. Input Characteristics Input current II () Ta = 2 C Input voltage I () Jan. 2

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