ULN2001A THRU ULN2004A DARLINGTON TRANSISTOR ARRAYS

Size: px

Start display at page:

Download "ULN2001A THRU ULN2004A DARLINGTON TRANSISTOR ARRAYS"

Jeffry Gordon
5 years ago
Views:

1 ULNA THRU ULNA SLRS D, DECEMBER REVISED APRIL HIGH-VOLTAGE HIGH-CURRENT -ma Rated Collector Current (Single ) High-Voltage s... V Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver Applications Designed to Be Interchangeable With Sprague ULNA Series description D OR N PACKAGE (TOP VIEW) The ULNA, ULNA, ULNA, and ULNA are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is ma. The Darlington pairs may be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. For -V (otherwise interchangeable) versions, see the SN through SN. The ULNA is a general-purpose array and can be used with TTL, P-MOS, CMOS, and other MOS technologies. The ULNA is specifically designed for use with - to -V P-MOS devices. Each input of this device has a zener diode and resistor in series to control the input current to a safe limit. The ULNA has a.-kω series base resistor for each Darlington pair for operation directly with TTL or -V CMOS devices. The ULNA has a.-kω series base resistor to allow its operation directly from CMOS or P-MOS devices that use supply voltages of to V. The required input current of the ULNA is below that of the ULNA, and the required voltage is less than that required by the ULNA. B B B B B B B E C C C C C C C logic symbol logic diagram B B B B B B B CLAMP This symbol is in accordance with ANSI/IEEE Std - and IEC Publication -. C C C C C C C B B B B B B C C C C C C B C PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright, Texas Instruments Incorporated POST OFFE BOX DALLAS, TEXAS

2 ULNA THRU ULNA SLRS D, DECEMBER REVISED APRIL schematics (each Darlington pair) Input B C Input B V. kω C. kω kω E. kω kω E ULNA ULNA Input B RB C ULNA: RB =. kω ULNA: RB =. kω. kω kω E All resistor values shown are nominal. ULNA, ULNA absolute maximum ratings at C free-air temperature (unless otherwise noted) Collector-emitter voltage V Input voltage, V I (see Note ) V Peak collector current (see Figures and ) ma clamp current, I OK ma Total emitter-terminal current A Continuous total power dissipation See Dissipation Rating Table Operating free-air temperature range C to C Storage temperature range C to C Lead temperature, mm (/ inch) from case for seconds C NOTE : All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. DISSIPATION RATING TABLE PACKAGE TA = C DERATING FACTOR TA = C POWER RATING ABOVE TA = C POWER RATING D mw. mw/ C mw N mw. mw/ C mw POST OFFE BOX DALLAS, TEXAS

3 ULNA THRU ULNA electrical characteristics, T A = C (unless otherwise noted) PARAMETER TEST FIGURE TEST CONDITIONS SLRS D, DECEMBER REVISED APRIL ULNA ULNA MIN TYP MAX MIN TYP MAX VI(on) On-state input voltage = V, = ma V (sat) Collector-emitter saturation voltage II = µa, = ma.... II = µa, = ma.. V II = µa, = ma.... VF Clamp forward voltage IF = ma.. V EX Collector cutoff current II(off) Off-state input current = V, II = UNIT = V, II = µa TA = C VI = V = V, TA = C C = µa, µa II Input current VI = V.. ma IR Clamp reverse current VR = V, TA = C µa hfe Static forward current transfer ratio = V, = ma IR Clamp reverse current VR = V µa Ci Input capacitance VI =, f = MHz pf electrical characteristics, T A = C (unless otherwise noted) PARAMETER TEST FIGURE VI(on) On-state input voltage =V (sat) EX Collector-emitter saturation voltage Collector cutoff current TEST CONDITIONS ULNA ULNA MIN TYP MAX MIN TYP MAX = ma = ma. = ma. = ma = ma = ma II = µa, = ma.... II = µa, = ma.. V II = µa, = ma.... = V, II = UNIT = V, II = µa TA = C VI = V VF Clamp forward voltage IF = ma.. V II(off) Off-state input current = V, = µa, TA = C VI =. V.. µa III Input current VI = V.. ma VI = V. IR Clamp reverse current VR = V VR = V, TA = C Ci Input capacitance VI =, f = MHz pf V µa POST OFFE BOX DALLAS, TEXAS

4 ULNA THRU ULNA SLRS D, DECEMBER REVISED APRIL switching characteristics, T A = C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tplh Propagation delay time, low-to-high-level output. µs See Figure tphl Propagation delay time, high-to-low-level output. µs VOH High-level output voltage after switching VS = V, IO ma, See Figure VS mv PARAMETER MEASUREMENT INFORMATION EX EX VI Figure. I CEX Test Circuit Figure. I CEX Test Circuit II(off) II(on) VI Figure. I I(off) Test Circuit Figure. I I Test Circuit hfe = I C II II VI(on) NOTE: II is fixed for measuring (sat), variable for measuring hfe. Figure. h FE, V CE(sat) Test Circuit Figure. V I(on) Test Circuit VR IR VF IF Figure. I R Test Circuit Figure. V F Test Circuit POST OFFE BOX DALLAS, TEXAS

5 ULNA THRU ULNA PARAMETER MEASUREMENT INFORMATION SLRS D, DECEMBER REVISED APRIL Input % % t PHL t PLH % % VOLTAGE WAVEFORMS Figure. Propagation Delay Time Waveforms VS Pulse Generator (see Note A) Input ULNA only. kω ULNA ULNA ULNA N mh Ω CL = pf (see Note B) TEST CIRCUIT Input ns % %. V. V % % µs ns VIH (see Note C) V VOLTAGE WAVEFORMS VOH VOL NOTES: A. The pulse generator has the following characteristics: PRR =. khz, ZO = Ω. B. CL includes probe and jig capacitance. C. For testing the ULNA and the ULNA, VIH = V; for the ULNA, VIH = V; for the ULNA, VIH = V. Figure. Latch-Up Test Circuit and Voltage Waveforms POST OFFE BOX DALLAS, TEXAS

6 ULNA THRU ULNA SLRS D, DECEMBER REVISED APRIL TYPAL CHARACTERISTS COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT (ONE DARLINGTON) COLLECTOR-EMITTER SATURATION VOLTAGE TOTAL COLLECTOR CURRENT (TWO DARLINGTONS PARALLELED) (sat) V Collector-Emitter Saturation Voltage V CE(sat)... TA = C II = µa II = µa II = µa Collector Current ma (sat) Collector-Emitter Saturation Voltage V... TA = C II = µa II = µa II = µa (tot) Total Collector Current ma Figure Figure Collector Current ma RL = Ω TA = C COLLECTOR CURRENT INPUT CURRENT VS = V VS = V II Input Current µa Figure POST OFFE BOX DALLAS, TEXAS

7 ULNA THRU ULNA THERMAL INFORMATION SLRS D, DECEMBER REVISED APRIL D PACKAGE MAXIMUM COLLECTOR CURRENT DUTY CYCLE N PACKAGE MAXIMUM COLLECTOR CURRENT DUTY CYCLE Maximum Collector Current ma N = N = N = N = N = N = TA = C N = Number of s Conducting Simultaneously N = Duty Cycle % N = N = N = TA = C N = Number of s Conducting Simultaneously Duty Cycle % Figure Figure Maximum Collector Current ma N = N = N = N = POST OFFE BOX DALLAS, TEXAS

8 ULNA THRU ULNA SLRS D, DECEMBER REVISED APRIL APPLATION INFORMATION VSS ULNA V VCC ULNA V P-MOS TTL Lamp Test Figure. P-MOS to Load Figure. TTL to Load VDD ULNA V VCC ULNA V RP CMOS Figure. Buffer for Higher Current Loads TTL Figure. Use of Pullup Resistors to Increase Drive Current POST OFFE BOX DALLAS, TEXAS

9 IMPORTANT NOTE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ( Critical Applications ). TI SEMONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLATIONS, DEVES OR SYSTEMS OR OTHER CRITAL APPLATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright, Texas Instruments Incorporated

ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS

ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS ULNA, ULNA, ULNA, ULNA SLRS DECEMBER REVISED APRIL HIGH-VOLTAGE HIGH-CURRENT -ma Rated Collector Current (Single ) High-Voltage s... V Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver