Low light electron multiplying image sensors modeling and characterization : Study of the EMCMOS concept. Timothée Brugière
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1 Low light electron multiplying image sensors modeling and characterization : Study of the EMCMOS concept Timothée Brugière NDP juin 2014 Groupe ebcmos
2 Why low ux? 2/13 Fast detection Acquisition frequency Very short integration time (less than 10 ms) Low number of photons per frame Low ux Few ( 1 to 10) photons per frame and per pixel Maximization of the number of detected photons : Quantum eciency Fill factor Micro-lens Minimization of noises : Charge transfer Dark current Cooling Read noise : Correlated Double Sampling (CDS) Low noise readout Charge multiplication Timothée Brugière - NDP juin 2014
3 How to make imaging with low uxes? Existing devices : scmos, EMCCD, ebcmos,... Limitations : Frame rate, Matrix size, Power consumption, Cooling, Read noise scmos No charge multiplication, Read noise : 1e EMCCD Eective readout noise : 0.1e CC noise (Clock-nduced Charge) in shift registers Power consumption, cooling, slow frame rate, smearing 3/13 Timothée Brugière - NDP juin 2014
4 The EMCMOS concept EMCMOS n-pixel charge multiplication no CC noise expected "System-on-chip" compactness Low power consumption Large dynamic range, no smearing mplementation in mature technology Reliability and cost 4/13 1 γ 2 EMCMOS Pixel Photodiode signal e noise sources noise e 3 EM structure potential impact ionization Readout charge to voltage conversion ADC Noise sources : 1. Band-to-band tunneling 2. ST (Shallow trench isolation) and metal oxides 3. Thermal generation Timothée Brugière - NDP juin 2014
5 The MULTMOS project 5/13 Production of EMCMOS prototypes E2V Saint-Egrève (France, sère) Design / Technological variants 200 distinct pixel structures 120 control parameters Characterization of the in-pixel multiplication Modeling EMCMOS original sequencing Optical benches and Acquisition card Acquisition and Analysis softwares Automation, quick view of results Sequencing, operating point Study of in-pixel impact ionization Parameter α maging with EMCMOS SNR, QE, PSF,... On-going Timothée Brugière - NDP juin 2014
6 EMCMOS chips by E2V 6/13 CMOS analog circuitry Di erential analog front end (AFE) CDS, Column FPN rejection Timothée Brugière - NDP juin 2014 Electronic Rolling Shutter (ERS) and Global Shutter (GS) Pitch : 8 µm O -chip adjustable gain and 12-bits ADC
7 Characterization set-up at PNL 7/13 3 optical benches Flat eld PTC, QE,... Focused source PSF Correlated photons QE Acquisition card Power sup., Bias cur. FPGA Sequencing, 120 par. Timothée Brugière - NDP juin Gb/s Ethernet Cooling, C-mount
8 EMCMOS pixel structures Multiple possible designs (Sanyo / E2V patents) : 8/13 Multiplication cell separated from the photodiode Multiplication occurs AFTER the integration HV gates integrated within the photodiode Multiplication occurs DURNG the integration Timothée Brugière - NDP juin 2014
9 EMCMOS modeling mpact ionization : Stochastic, α(e) = γ Z(E) e β/e Excess Noise Factor (ENF) Previous works : Van Vliet (1979), Hollenhorst (1990) 9/13 Multiplication AFTER the integration A theory of multiplication noise for electron multiplying CMOS image sensors T.Brugière, F. Mayer, P. Fereyre, A. Dominjon, R. Barbier published in EEE Transactions on Electron Devices Generalized modeling : N contributions to the output signal Probability Generating Functions (PGF) Response to 1 electron contributions are not independents (Categorical distribution) Timothée Brugière - NDP juin 2014
10 EMCMOS modeling Output signal : ( ) σ 2 n out = meq 2 σ 2 n in + n in N c N c p iσ 2 m eq + p i ( m eq i i meq ) 2 i=1 i=1 }{{} Excess noise factor : Excess noise ENF = 1 + EN ϕ + EN T P N m eq 2 σ 2 n in 10/13 Timothée Brugière - NDP juin 2014
11 Multiplication test structure 11/13 Structures without photodiode Dark current generation under HV gates used as source Generation of e DURNG the multiplication Generation boosted by heating nput signal multiplication time ntegration and multiplication fully overlapped Dark current generation Log-normal distribution over the matrix Flux driven by temperature Timothée Brugière - NDP juin 2014
12 Results on test structures 12/13 Data : Model : Results : Data taking at multiple HVs Conversion factor from PTC analysis CVF 80 µv/e Multiplication Bernoulli Source Poisson n in = σ 2 in Fit output signal with the modeling α = 0.32% at E = 24 V/µm Limitation from test structures To be compared to values extract from full structures On-going Timothée Brugière - NDP juin 2014
13 Conclusion 13/13 Automated acquisition and analysis Fast characterization of a chip EMCMOS Modeling Formula validated by Monte-Carlo simulation EMCMOS + generation during multiplication for other devices Modeling validation by comparison with real data Mean output signal and associated expected variance Validation of the impact ionization implementation in a 8 µm pitch pixel What next? Study of full structures : On-going maging with EMCMOS Timothée Brugière - NDP juin 2014
14 13/13 THANK YOU Timothée Brugière - NDP juin 2014
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