ABSTRACT 1. INTRODUCTION

Transcription

1 C. T.-C. Nguyen, Micromechanical components for miniaturized low-power communications (invited plenary), Proceedings, 1999 IEEE MTT-S International Microwave Symposium RF MEMS Workshop (on Microelectromechanical Devices for RF Systems: Their Construction, Reliability, and Application), Anaheim, California, June 18, 1999, pp Microelectromechanical Components for Miniaturized Low-Power Communications Clark T.-C. Nguyen Center for Integrated Microsystems Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan ABSTRACT An overview of recent progress in the research and development of microelectromechanical devices for use in wireless communication sub-systems is presented. Among the specific devices described are tunable micromachined capacitors, integrated high-q inductors, and micro-scale vibrating mechanical s with Q s in the tens of thousands. Specific applications are reviewed for each of these components with emphasis on methods for miniaturization and performance enhancement of existing and future wireless transceivers. 1. INTRODUCTION Vibrating mechanical tank components, such as crystal and SAW s, are widely used for frequency selection in communication sub-systems because of their high quality factor (Q s in the tens of thousands) and exceptional stability against thermal variations and aging. In particular, the majority of heterodyning communication transceivers rely heavily upon the high Q of SAW and bulk acoustic mechanical s to achieve adequate frequency selection in their RF and IF filtering stages and to realize the required low phase noise and stability in their local oscillators. In addition, discrete inductors and variable capacitors are used to properly tune and couple the front end sense and power amplifiers, and to implement widely tunable voltage-controlled oscillators. At present, the aforementioned s and discrete elements are off-chip components, and so must interface with integrated electronics at the board level, often consuming a sizable portion of the total sub-system area. In this respect, these devices pose an important bottleneck against the ultimate miniaturization and portability of wireless transceivers. For this reason, many research efforts have been focused upon strategies for either miniaturizing these components [1-5] or eliminating the need for them altogether [6-8]. The rapid growth of IC-compatible micromachining technologies that yield micro-scale, high-q tank components may now bring the first of the above strategies closer to reality. Specifically, the high-q RF and IF filters, oscillators, and couplers, currently implemented via off-chip s and discrete passives may now potentially be realized on the micro-scale using micromachined equivalents based on a variety of novel devices, including high-q on-chip vibrating mechanical s [10-12], voltage-tunable on-chip capacitors [13], isolated low-loss inductors [14-18], microwave/mm-wave medium-q filters [19-22], structures for high frequency isolation packaging [23-24], and low loss micromechanical switches [25-27]. Once these miniaturized filters and oscillators become available, the fundamental bases upon which communication systems are developed may also evolve, giving rise to new system architectures with possible power and bandwidth efficiency advantages. For systems operating past X-Band, antennas can also be micromachined with potential cost savings and with additional capabilities attained via active antenna arrays (e.g., phased arrays, power combining, etc.) [28-30]. This abstract provides a prelude to the presentation material that follows. It begins with a brief introduction into the needs of wireless communication transceivers, identifying specific functions that could greatly benefit from micromechanical implementation, and describing methods for substantially reducing power consumption by using micromechanical devices in alternative transceiver architectures. The presentation material that follows then reviews several specific devices, with particular emphasis on frequency-selective microelectromechanical components for high-q oscillators and filters. It concludes with suggestions on how this micro-scale technology can best be used to revolutionize wireless communications. Additional author information: Full Address: 2406 EECS Bldg., 1301 Beal Ave, University of Michigan, Ann Arbor, MI Tel: (734) , FAX: (734) , ctnguyen@eecs.umich.edu,

2 Antenna1 Antenna Switch Bandpass Filter (Ceramic) TFR or /µmachin. Fig. 1: Antenna2 switch T/R Switch switch Off-Chip Passive Elements on-chip inductor RF LNA VCO Xstal Tank + tunable capacitor Mixer Image Reject Filter (Ceramic) Channel Select PLL Power Amplifier IF Filter (SAW) TFR or /µmachin. Transmitter IF Mixer System-level schematic detailing the front-end design for a typical wireless transceiver. The off-chip, high-q, passive components targeted for replacement via micromechanical versions (suggestions in lighter ink) are indicated in the figure. AGC IF PLL IF LNA Modulator 90 o Transmit PLL Receiver 90 o VCO Xstal Tank DAC DAC ADC ADC I Q I Q on-chip inductor + or tunable capacitor 2. ADVANTAGES OF MEMS IN COMMUNICATION TRANSCEIVERS To illustrate more concretely the specific transceiver functions that benefit from micromechanical implementation, Fig. 1 presents the system-level schematic for the front-end of a typical super-heterodyne wireless transceiver. As implied in the figure, several of the constituent components can already be miniaturized using integrated circuit transistor technologies. These include the low noise amplifiers (LNA s) in the receive path, the solid-state power amplifier (SSPA) in the transmit path, synthesizer phase-locked loop (PLL) electronics, mixers, and lower frequency digital circuits for baseband signal demodulation. Due to noise, power, and frequency considerations, the SSPA (and sometimes the LNA s) are often implemented using compound semiconductor technologies (i.e., GaAs). Thus, they often occupy their own chips, separate from the other mentioned transistor-based components, which are normally realized using silicon-based bipolar and CMOS technologies. However, given the rate of improvement of silicon technologies (silicon-germanium included [31]), it is not implausible that all of the above functions could be integrated onto a single-chip in the foreseeable future. Unfortunately, placing all of the above functions onto a single chip does very little towards decreasing the overall super-heterodyne transceiver size, which is dominated not by transistor-based components, but by the numerous passive components indicated in Fig. 1. The presence of so many frequency-selective passive components is easily justified when considering that communication systems designed to service large numbers of users require numerous communication channels, which in many implementations (e.g., Time Division Multiple Access (TDMA)) must have small bandwidths and must be separable by transceiver devices used by the system. The requirement for small channel bandwidths results in a requirement for extremely selective filtering devices for channel selection and extremely stable (noise free) local oscillators for frequency translation. For the vast majority of cellular and cordless standards, the required selectivity and stability can only be achieved using high-q components, such as discrete inductors, discrete tunable capacitors (i.e., varactors), and SAW and quartz crystal s, all of which interface with IC components at the board level. The needed performance cannot be achieved using conventional IC technologies, because such technologies lack the required Q. It is for this reason that virtually all commercially available cellular or cordless phones contain numerous passive SAW and crystal components. The presentation that follows describes methods for reducing the size and power consumption of portable transceivers by first replacing high-q passives by micromechanical versions, then extending their system-level presence by using them in large quantities. Among the components targeted for replacement in cellular and cordless applications are RF filters, including image reject filters, with center frequencies ranging from 800 MHz to 2.5 GHz; IF filters, with center frequencies ranging from

3 455 khz to 254 MHz; high-q, tunable, low phase noise oscillators, with frequency requirements in the 10 MHz to 2.5 GHz range; and switches for transmit/receive (T/R) selection, antenna selection, and multi-band configurability Miniaturization and IC-Compatibility Reduced size constitutes the most obvious incentive for replacing SAWs, crystals, and other discrete passives by equivalent µmechanical devices. The substantial size difference between micromechanical components and their macroscopic counterparts is illustrated in Fig. 3, which compares a typical SAW with a clamped-clamped beam micromechanical of comparable frequency. The particular µ shown is excited electrostatically via parallelplate capacitive transducers and designed to vibrate in a direction parallel to the substrate with a frequency determined by material properties, geometric dimensions, and stress in the material. Typical dimensions for a 100 MHz micromechanical are L 12.9 µm, W=2 µm, and h=2 µm. With electrodes and anchors, this device occupies an area of 420 µm 2 = mm 2. Compared with the several mm 2 required for a typical VHF range SAW, this represents several orders of magnitude in size reduction. A related incentive for the use of micromechanics is integrability. Micromechanical structures can be fabricated using the same planar process technologies used to manufacture integrated circuits. Several technologies demonstrating the merging of CMOS with surface micromachining have emerged in recent years [10,32-34], and one of these is now used for high volume production of commercial accelerometers [32]. Using similar technologies, complete systems containing integrated micromechanical filters and oscillator tanks, as well as amplification and frequency translation electronics, all on a single chip, are possible. This in turn makes possible high-performance, single-chip transceivers, with super-heterodyne architectures and all the communication link advantages associated with them. Other advantages inherent with integration are also obtained, such as elimination of board-level parasitics that could otherwise limit filter rejections and distort their passbands Power Savings Via MEMS Quartz Substrate MEMS Resonator SAW Resonator Interdigital Transducers Transducer Capacitor 1000X Magnification 1 cm 1 cm Fig. 2. (a) Simplified block diagram of a dual-conversion receiver. (b) Approximate physical implementation, emphasizing the board-level nature (many inductor and Although certainly a significant advancement, Image Reject Signal Interfering Signals miniaturization of transceivers only touches the Filter Power From a surface of the true potential of this technology. Nearby Transmitter Antenna MEMS technology may in fact make its most Desired Information LNA Distortion IM 3 important impact not at the component level, but Signal interference must at the system level, by offering alternative transceiver architectures that emphasize selectivity ω inf lower the LNA efficiency ω to linearize it Low Noise over complexity to substantially reduce power ω Amplifier (LNA) inf + ω ω inf +2 ω Signal Noise Filter consumption and enhance performance. Power Interference From Tail The power savings advantages afforded by 3rd Order Intermod. of Phase Noise Spectrum Component Generated MEMS is perhaps best illustrated by comparison Signal To by Amplifier Power Baseband with recent attempts to reduce the cost and size of Distortion IF Electronics wireless transceivers via increased circuit complexity. Specifically, in these approaches higher Power inf ω Filter Signal Local Oscillator ω With Phase Noise Mixer levels of transistor integration and alternative ω architectures are used to reduce the need for the IF ω off-chip, high-q passives used in present-day For Phase Noise need Power Consumption and super-heterodyne transceivers, with obvious size ω IF ω Q advantages. Unfortunately, removal of off-chip Fig. 4. Modified signal flow diagrams for a conventional receiver using wideband RF filters. passives often comes at the cost of increased power consumption in circuits preceding and including the analog-to-digital converter (ADC), which now must have higher dynamic ranges to avoid desensitization caused 1 cm h Anchor W L 2 µm Resonator Beam Silicon Die

4 by larger adjacent channel interferers. A selectivity (or Q) versus power trade-off is clearly seen here. To better convey this point, specific phenomena Interfering Signals Image Reject that give rise to receiver desensitization are illustrated in the diagram of Fig. 4, which depicts the Signal From a Nearby Filter (very high Q) Power Transmitter Greatly Antenna Attenuated signal flow for a desired signal at ω inf with two Desired Information adjacent interferers (offset ω and 2 ω) from Signal antenna to baseband in a conventional receiver ω architecture using wideband RF filters. As shown, ω Low Noise inf due to nonlinearity in the low-noise amplifier Amplifier (LNA) ω inf + ω ω inf +2 ω (LNA) and phase noise in the local oscillator, the Signal Noise Filter Power (very high Q) presence of interferers can potentially desensitize 3rd Order Intermod. Component Generated the receiver by (1) generating third-order intermodulation by Amplifier Distortion (IM 3 ) distortion components over the Greatly Attenuated desired signal at the output of the LNA; and (2) Signal Local Oscillator ω aliasing superposed phase noise sidebands from Power inf ω With Phase Noise Mixer the local oscillator onto the desired signal immediately after the mixer stage. In order to avoid such desensitization, the LNA must satisfy a strict linearity requirement, and the local oscillator a ω IF ω strict phase noise requirement, both of which demand significantly higher power consumption Fig. 5. in these components. Similar increases in power consumption are also often necessary to maintain Filter 1 adequate dynamic range in subsequent stages Micromechanical (e.g., the A/D converter). Capacitors and Switches A method for eliminating such a waste of Within power becomes apparent upon the recognition that Antenna the above desensitization phenomena arise in conventional Filter 2 architectures only because such archi- Switchable Matching tectures allow interfering signals to pass through Network the RF filter and reach the LNA and mixer. If these signals were instead eliminated at the outset by a much more selective RF filter, then interference from IM 3 components and from phase noise Filter n sidebands would be greatly alleviated, as shown in Fig. 5, and specifications on linearity and phase noise could be greatly relaxed. The power savings Mode afforded by such relaxations in specifications is potentially enormous, especially when considering the possibility of replacing conventional Class Parallel Bank of Tunable/ Switchable Micromechanical Filters A or AB type amplifiers with more efficient topologies, Fig. 6. such as Class E. The above discussion per- tains to the receive path, but if channel-select filters with both sufficiently high Q and power handling capability are available and placed right LNA Distortion no longer a problem no need to sacrifice efficiency for linearity Interference From Tail of Phase Noise Spectrum no longer a factor Signal To Power Baseband IF Electronics Filter Phase Noise much less of a problem (for receive) Modified signal flow diagrams for an RF channel-select receiver. before the transmitting antenna, similar power savings are possible for the transmit local oscillator and power amplifier, as well. An architecture such as shown in Fig. 5 requires a tunable, highly selective (i.e., high-q) filter capable of operation at RF frequencies. Unfortunately, partially due to their own high stability, high-q filters are generally very difficult to tune over large frequency ranges, and MEMS-based filters are no exception to this. Although µmechanical s can be tuned over larger frequency ranges than other high-q tank technologies, with voltage-controllable tuning ranges of up to 5% depending on design, a single micromechanical filter still lacks the tuning range needed for some wide-band applications Thanks to the tiny size of micromechanical filters, however, there no longer needs to be only one filter. One of the major advantages of micromechanical filters is that, because of their tiny size and zero dc power dissipation, many of them (perhaps ω IF Frequency Translation LNA Reference Oscillator Mixer VCO ω To Baseband Electronics Frequency and Switch Control Electronics Possible front-end receiver architecture utilizing a parallel bank of tunable/switchable micromechanical filters for a first stage of channel selection. Note that several micromechanical devices can also be used within the frequency translation blocks as well.

5 hundreds or thousands) can be fabricated onto a smaller area than occupied by a single one of today s macroscopic filters. Thus, rather than use a single tunable filter to select one of several channels over a large frequency range, a massively parallel bank of switchable micromechanical filters can be utilized, in which desired frequency bands can be switched in, as needed. The simplified block diagram for such a front-end architecture is illustrated in Fig. 6, where each filter switch combination corresponds to a single micromechanical filter, with input and output switches activated by the mere application or removal of dc-bias voltages from the elements [11]. By further exploiting the switching flexibility of such a system, some very resilient frequency-hopping spread spectrum transceiver architectures can be envisioned that take advantage of simultaneous switching of high-q micromechanical filters and oscillators. In effect, frequency-selective devices based on MEMS technologies can potentially enable substantial power savings by making possible paradigm-shifting transceiver architectures that, rather than eliminate high-q passive components, attempt to maximize their role with the intention of harnessing the Q versus power trade-off often seen in transceiver design. The next sections now focus upon the subject micromechanical devices. 3. REFERENCES [1] E. Frian, S. Meszaros, M. Chuaci, and J. Wight, Computer-aided design of square spiral transformers and inductors, 1989 IEEE MTT-S Dig., pp [2] N. M. Nguyen and R. G. Meyer, Si IC-compatible inductors and LC passive filters, IEEE J. of Solid-State Circuits, vol. SC-25, no. 4, pp , Aug [3] N. M. Nguyen and R. G. Meyer, A 1.8-GHz monolithic LC voltage-controlled oscillator, IEEE J. of Solid-State Circuits, vol. SC-27, no. 3, pp [4] S. V. Krishnaswamy, J. Rosenbaum, S. Horwitz, C. Yale, and R. A. Moore, Compact FBAR filters offer low-loss performance, Microwaves & RF, pp , Sept [5] R. Ruby and P. Merchant, Micromachined thin film bulk acoustic s, Proceedings of the 1994 IEEE International Frequency Control Symposium, Boston, MA, June 1-3, 1994, pp [6] P. R. Gray and R. G. Meyer, Future directions in silicon IC s for RF personal communications, Proceedings, 1995 IEEE Custom Integrated Circuits Conference, Santa Clara, CA, May 1-4, 1995, pp [7] A. A. Abidi, Direct-conversion radio transceivers for digital communications, IEEE J. Solid-State Circuits, vol. 30, No. 12, pp , Dec [8] D. H. Shen, C.-M. Hwang, B. B. Lusignan, and B. A. Wooley, A 900-MHz RF front-end with integrated discrete-time filtering, IEEE J. of Solid-State Circuits, vol. 31, no. 12, pp , Dec [9] C. T.-C. Nguyen, L. P.B. Katehi, and G. M. Rebeiz, Micromachined devices for wireless communications (invited), Proc. IEEE, vol. 86, no. 8, pp , Aug [10] C. T.-C. Nguyen and R. T. Howe, An integrated CMOS micromechanical high-q oscillator, IEEE J. Solid- State Circuits, vol. 34, no. 4, pp , April [11] C. T.-C. Nguyen, Frequency-selective MEMS for miniaturized low-power communication devices, to be published in IEEE Trans. Microwave Theory Tech., May 1999, 18 pages. [12] K. M. Lakin, G. R. Kline, and K. T. McCarron, Development of miniature filters for wireless applications, IEEE Trans. Microwave Theory Tech., vol. 43, no. 12, pp , Dec [13] D. J. Young and B. E. Boser, A micromachined variable capacitor for monolithic low-noise VCOs, Technical Digest, 1996 Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, June 3-6, 1996, pp [14] D. J. Young, V. Malba, J.-J. Ou, A. F. Bernhardt, and B. E. Boser, Monolithic high-performance three-dimensional coil inductors for wireless communication applications, Technical Digest, IEEE International Electron Devices Meeting, Washington, D. C., Dec. 8-11, 1997, pp [15] M. G. Allen, Micromachined intermediate and high frequency inductors, 1997 IEEE International Symposium on Circuits and Systems, Hong Kong, June 9-12, 1997, pp [16] C. H. Ahn, Y. J. Kim, and M. G. Allen, A fully integrated micromachined toroidal inductor with nickel-iron magnetic core (the switched DC/DC boost converter application), Digest of Technical Papers, the 7 th International Conference on Solid-State Sensors and Actuators (Transducers 93), Yokohama, Japan, June 7-10, 1993, pp [17] B. Ziaie, N. K. Kocaman, and K. Najafi, A generic micromachined silicon platform for low-power, low-loss miniature transceivers, Digest of Technical Papers, 1997 International Conference on Solid-State Sensors and Actuators (Transducers 97), Chicago, Illinois, June 16-19, 1997, pp [18] C. Y. Chi and G. M. Rebeiz, ``Planar microwave and millimeter-wave lumped elements and coupled-line filters using micro-machining techniques,'' IEEE Trans. Microwave Theory Tech., vol. MTT-43, pp , April [19] T. M. Weller, L. P. Katehi and G. M. Rebeiz, High performance microshield line components, IEEE Trans. Microwave

6 Theory Tech., vol. MTT-43, pp , March [20] S. V. Robertson, L. P. Katehi and G. M. Rebeiz, Micromachined W-band filters, IEEE Trans. Microwave Theory Tech., vol. MTT-44, pp , April [21] C. Y. Chi and G. M. Rebeiz, Conductor-loss limited stripline s and filters, IEEE Trans. Microwave Theory Tech., vol. MTT-44, pp , April [22] T. M. Weller, L. P. Katehi and G. M. Rebeiz, A 250~GHz microshield band-pass filter, IEEE Microwave Guided Wave Lett., vol. MGWL-5, pp , May [23] R. F. Drayton, R. M. Henderson, and L. P. B. Katehi, Advanced monolithic packaging concepts for high performance circuits and antennas, 1996 IEEE MTT-S Digest, pp , June [24] A. R. Brown and G. M. Rebeiz, Micromachined micropackaged filter banks, Microwave and Guided Wave Letters, vol. 8, March [25] C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen and B. Norvell, Characteristics of micromachined switches at microwave frequencies, IEEE MTT-S Digest, pp , June, 1996 [26] J. Yao and M. F. Chang, A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC to 4 GHz, 8 th Int. Conf. on Solid-State Sensors and Actuators, Transducers, pp , June [27] S. Pacheco, C. T.-C. Nguyen, and L. P. B. Katehi, Micromechanical Electrostatic K-Band Switches, IEEE MTT-S International Microwave Symposium, June [28] G. P. Gauthier, A. Courtay, and G. M. Rebeiz, Microstrip antennas on synthesized low dielectric constant substrates, IEEE Trans. Antennas Propag., vol. AP-45, pp , Aug [29] J. Papapolymerou, R. F. Drayton, and L. Katehi, Micromachined patch antennas, IEEE Trans. on Antennas and Propag., vol. AP-46, pp , Feb [30] M. Stotz, G. Gottwald, and H. Haspeklo, Planar millimeter-wave antennas using SiNx-membranes on GaAs, IEEE Trans. Microwave Theory Techn., vol. 44, pp , Sept [31] J. D. Cressler, et al., Silicon-germanium heterojunction bipolar technology: the next leap for silicon? Digest of Technical Papers, 1994 ISSCC, San Francisco, CA, February, [32] T. A. Core, W. K. Tsang, S. J. Sherman, Fabrication technology for an integrated surface-micromachined sensor, Solid State Technology, pp , Oct [33] R. D. Nasby, et al., Application of chemical-mechanical polishing to planarization of surface-micromachined devices, Technical Digest, 1996 Solid-State Sensor and Actuator Workshop, Hilton Head, SC, pp , June 3-6, [34] J. M. Bustillo, G. K. Fedder, C. T.-C. Nguyen, and R. T. Howe, Process technology for the modular integration of CMOS and polysilicon microstructures, Microsystem Technologies, 1 (1994), pp Presentation material now follows.

7 Microelectromechanical Components for Miniaturized Low-Power Communications Clark T.-C. Nguyen Center for Integrated Microsystems Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions

8 Antenna Miniaturization of Transceivers LNA Mixer VCO need high-q small BW with low loss LNA Mixer VCO Baseband Electronics Receiver Block Diagram RF Filter (ceramic) Transistor Electronics Xstal Osc. IF Filter (SAW) IF Filter (Xstal) Board-Level Implementation High-Q functionality required by oscillators and filters cannot be realized using standard IC components use off-chip mechanical components SAW, ceramic, and crystal s pose bottlenecks against ultimate miniaturization Target Application: Integrated Transceivers Antenna LNA Mixer VCO LNA Mixer VCO Baseband Electronics Receiver Block Diagram RF Filter (ceramic) Transistor Electronics Xstal Osc. IF Filter (SAW) IF Filter (Xstal) Micromechanical Filter Resonator Coupling Spring Resonators Anchor Transmission [db] Frequency [MHz] 7.88 MEMS Single-Chip Board-Level Implementation Version Off-chip high-q mechanical components present bottlenecks to miniaturization replace them with µmechanical versions

9 Release Etch Barrier Surface Micromachining Structural Material (e.g., polysilicon, nickel, etc.) Sacrificial Oxide Hydrofluoric Acid Release Solution Silicon Substrate pwell Free-Standing Resonator Beam Silicon Substrate pwell Fabrication steps compatible with planar IC processing MEMS-Replaceable Transceiver Components Antenna1 Antenna2 Antenna Switch Bandpass Filter (Ceramic) TFR or switch T/R Switch switch Off-Chip Passive Elements RF LNA VCO Xstal Tank Mixer on-chip + tunable inductor capacitor Image Reject IF Filter Filter (SAW) (Ceramic) TFR or Channel Select PLL Power Amplifier Transmitter IF LNA IF PLL Modulator IF Mixer A large number of off-chip high-q components replaceable with µmachined versions; e.g., using µmachined s, switches, capacitors, and inductors AGC 90 o Transmit PLL Receiver 90 o VCO Xstal Tank DAC DAC ADC ADC Q I I Q on-chip inductor + or tunable capacitor

10 Synthesizer Oscillators Within Transceivers Antenna1 Antenna2 Antenna Switch Bandpass Filter (Ceramic) TFR or switch T/R Switch switch Off-Chip Passive Elements RF LNA VCO Xstal Tank Mixer on-chip + tunable inductor capacitor Image Reject IF Filter Filter (SAW) (Ceramic) TFR or Channel Select PLL Power Amplifier Transmitter Synthesizers indicated in yellow AGC IF LNA IF PLL Modulator IF Mixer 90 o Transmit PLL Receiver 90 o VCO Xstal Tank DAC DAC ADC I ADC Q I Q on-chip inductor + or tunable capacitor Achieving High Oscillator Stability Frequency-Selective Tank Element 0 o θ v o v o t T o Amplitude [db] Low-Q 0 Q=10 Q= f = 400 khz (e.g. LC or ring oscillators) 0 o + θ Amplitude [db] High-Q (e.g. crystal oscillators) f = 4 khz Freq. [MHz] Freq. [MHz] Phase [deg] 0 θ = 40 o Phase [deg] θ = 40 o High tank Q high frequency stability

11 Voltage-Controlled Oscillators (VCOs) Off-Chip Implementation Grounded Transmission Line Inductor On-Chip Implementation On-chip Spiral Inductor L eff C 2 C 1 Varactor Diode Silicon Diode Junction Capacitor ω C o L 1 C 2 eff / = C 1 + C 2 Off-chip inductor Q~100 s Tunable Varactor Diode Capacitor Q~60 Spiral (shown) or bond-wire inductor Q: 3 to 10 Tunable reverse-biased diode capacitor high series R Problem: capacitor lacks sufficient Q and tuning range Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions

12 Voltage-Tunable High-Q Capacitor Micromachined, movable plate-to-plate capacitors Tuning range exceeding that of on-chip diode capacitors and on par with off-chip varactor diode capacitors Anchor Al Top Plate Al Suspension Al Layer Under Suspension Top View d V tune µm Oxide Al Plate L p force Al Ground Plane Cross-Section Al [Young, Boser 1996] Challenges: microphonics, tuning range truncated by pull-in Fabricated Voltage-Tunable High-Q Capacitor Surface micromachined in sputtered aluminum Four Capacitors in Parallel 200 µm [Young, Boser 1996] C tot =2.2pF; 16% tuning range for V tune =5.5V; Q~60 Challenge: contact and support line resistance degrades Q

13 Spiral Inductor Deficiencies C o L s R s C ox C ox Circuit Metal Interconnect C sub R sub Rsub C sub pwell Thermal Oxide Silicon Substrate ω o L s Q R s Series R s degrades Q solns: increase L per unit length; use thicker metal Parasitic C o, C ox, C sub and R sub self-resonance, degrades Q soln: isolate from substrate Three-Dimensional Coil Inductor Electroplated copper winds achieved using maskless, 3-D, direct-write laser lithography to pattern resist mold Copper Winds Insulating Core 500 µm Substrate 3-D structure minimizes substrate coupling and eddy current loss Thick copper reduces series R [Young, Boser IEDM 97] Performance: W wind =50µm h wind =5µm for 1 turn: L tot =4.8nH 1 GHz

14 LC-Tank Transceiver Components Antenna1 Antenna2 Antenna Switch Bandpass Filter (Ceramic) TFR or switch T/R Switch switch Off-Chip Passive Elements RF LNA VCO Xstal Tank Mixer on-chip + tunable inductor capacitor Image Reject IF Filter Filter (SAW) (Ceramic) TFR or Channel Select PLL Power Amplifier Transmitter IF LNA IF PLL Modulator IF Mixer Yellow: replaceable LC tanks (low to medium Q required) Red: very high-q tanks required (Q > 1,000) AGC 90 o Transmit PLL Receiver 90 o VCO Xstal Tank DAC DAC ADC ADC Q I I Q on-chip inductor + or tunable capacitor Selective Low Loss Filters: Need High-Q Resonator Tank Coupler Resonator Tank Typical LC implementation: Coupler Resonator Tank i o ---- v i General BPF Implementation R x1 C x1 L x1 R x2 C x2 L x2 R x3 C x3 L x3 ω ο ω C 12 C 23 In -based filters: high tank Q low insertion loss At right: a 0.3% bandwidth 70 MHz (simulated) heavy insertion loss for Q < 5,000 Transmission [db] Increasing Insertion Loss Tank Q = 10,000 Tank Q = 5,000 Tank Q = 2,000 Tank Q = 1, Frequency [MHz]

15 Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions Attaining High-Q Problem: LC tanks cannot achieve Q s in the thousands on-chip spiral inductors Q s no higher than ~10 off-chip inductors Q s in the range of 100 s Observation: vibrating mechanical resonances Q > 1,000 Example: quartz crystal s extremely high Q s ~ 10,000 or higher (Q ~ 10 6 possible) mechanically vibrates at a distinct frequency in a thickness-shear mode Quartz s C o L x C x R x Thickness-Shear Q > 10,000 Mode Solution: use vibrating micromechanical s

16 Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions Comb-Transduced Folded-Beam µresonator Micromachined from in situ phosphorous-doped polysilicon 0 Sustaining (Input) -100 Amplifier TC Comb-Transducer f ~ -10ppm/ o C Anchors Shuttle -400 Mass Folded-Beam -700 Suspension ( f f o ) 10 6 [ppm] Temperature [K] At right: Q = 50,000 measured at 20 mtorr pressure (Q = 27 at atmospheric pressure) Problems: large mass limited to low frequencies; low coupling Magnitude [db] v o v i Frequency [Hz]

17 Vertically-Driven Micromechanical Resonator To date, most used design to achieve VHF frequencies Resonator Beam h L r W r i o Q~10,000 v i d V P C(t) i o i o V P x f o z f y 1 k r f o = = 1.03 E 2π m h r ρ L2 r (e.g. m r =10-13 kg) E = Youngs Modulus ρ=density Smaller mass higher frequency range and lower series R x V P Voltage-Controllable Center Frequency Anchor Micromechanical Resonator Silicon Nitride Quadrature force voltage-controllable electrical stiffness: k e Finger Gap = 1 f o = π Isolation Oxide Silicon Substrate ε o A o V d 3 2 P k m k e m r Overlap Area Frequency [MHz] A o =88µm 2 d=1000å DC-Bias [V P ] 1.1%

18 Micromechanical Resonator Equivalent Circuit Resonator Beam i 1 v1 i 1 L x1 C o1 v 1 i 2 v 2 V P C x1 s R x1 i x1 V P i 2 i 2 v 2 f o (V P1 ) Q~10,000 f f o (V P2 ) Typical: C x ~ 0.20 ff L x ~ 2.6 mh R x ~ 115 Ω C o ~ 17 ff Fabricated HF µmechanical Resonator Surface-micromachined, POCl 3 -doped polycrystalline silicon Anchor L r Resonator s L r =40.8 µm, W r =8 µm, 20 µm h=2 µm, d=0.1µm Extracted Q = 8,000 (vacuum) Freq. influenced by dc-bias and anchor effects d Transmission [db] W r Press.=70mTorr V P =10V, v i =3mV Frequency [MHz]

19 Transmission [db] 0 Desired Filter Characteristics Ripple Ultimate Attenuation 3dB bandwidth 20dB bandwidth Insertion Loss 3dB 20dB Frequency [Hz] 20 db-down Bandwidth db-down Bandwidth 20 db-down Shape Factor = Small shape factor is preferred better selectivity High-Frequency µmechanical Filters Freq. Pulling R Q1 Resonator Anchor Input Coupling Spring Output v o v i v i ω o ω V 1 f V P DC-Bias Resonator1 Coupling Spring12 V 2 f Resonator2 R Q2 v o z x y v 1 + C o1 1:η c1 η c2 :1 1/k 1/k 1:η 1/k r m r s12 s12 c r 1/k r m e1 r η e2 :1 c r x x 1/k s12 C o2 v 2 +

20 Two Uncoupled Resonators c r1 Ideal Spring Coupled Filter X F d Resonator Stiffness Coupler Stiffness k r1 c r2 F m r1 m r2 X F d ω o ω o ω ω BW Normalized Coupling Coefficient = f o k sij k ij k r X F d ω o1 k r2 Massless Spring ω o ω c r1 k r1 m r1 k s12 m r2 c r2 k r2 Spring Coupled Resonators High-Frequency µmechanical Filters Freq. Pulling R Q1 Resonator Anchor Input Coupling Spring Output v o v i v i ω o ω V 1 f V P DC-Bias Resonator1 Coupling Spring12 V 2 f Resonator2 R Q2 v o z x y v 1 + C o1 1:η c1 η c2 :1 1/k 1/k 1:η 1/k r m r s12 s12 c r 1/k r m e1 r η e2 :1 c r x x 1/k s12 C o2 v 2 +

21 HF Spring-Coupled Micromechanical Filter W r Coupling Coupling Spring Spring s L 12 2-Resonator HF (4th Order) [Bannon, Clark, Nguyen 1996] L r Resonators Transmission [db] µm Anchor Anchor Performance f o =7.81MHz, BW=15kHz Rej.=35dB, I.L.<2dB 7.81 MHz 7.84 Frequency [MHz] 7.88 VHF Spring-Coupled Micromechanical Filter Frequency Tuning L c =2.7 µm 11.8 µm DC Bias/Annealing W e =11 µm Output 34.5 MHz 22 µm -2-6 Input 8 µm gap=250å Performance: V P ~15V, R Q ~2kΩ f o ~34.5MHz, BW~1.3% Rej.=25dB, I.L.<6dB 2.2 µm [Wong, Ding, Nguyen 1998] Transmission [db] Frequency [MHz]

22 Attaining Better Performance Use more s to attain higher order Filter Order = 2 x (# of s) Transmission [db] One-Resonator (second-order) Two-Resonator (fourth-order) Three-Resonator (sixth-order) Frequency [khz] Higher order sharper roll-off better stopband rejection Drive Resonator Comb-Transducer Anchor 20µm High-Order µmechanical Filter 32µm Coupling Springs Ratioed Folded Beam Coupling Beam L sij =95µm Folding Truss 3-Resonator MF Sense Resonator (6th Order, 1/5- Velocity Coupled) f o =340kHz BW=403Hz %BW=0.09% Stop.R.=64 db I.L.<0.6 db [Wang, Nguyen 1997] Transmission [db] Frequency [khz] 340 khz

23 Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions Extending the Frequency Range To obtain even higher frequency: Shrink beam dimensions Must shrink gap d dimensions, as well Resonator Beam h d 100 MHz: L r =11.8 µm, W r =8 µm, h=2 µm, d=400å Anchor The useful frequency range will, however, depend on other factors: thermal stability soln: design, compensation, control noise limitations soln: transducer design power handling soln: geometric and transducer design fabrication tolerances (absolute and matching) quality factor soln: material and design research L r W r 1 f o = π k r m r

24 Anchor Dissipation in Clamped-Clamped Beams Transmission [db] MHz Q=8, Anchor Frequency [MHz] L r =40.8µm, W r =8µm, h=2µm, d=1,000å, W e =20µm, V P =35V s Anchor Dissipation in Clamped-Clamped Beams Transmission [db] MHz Q=8, Anchor Frequency [MHz] L r =40.8µm, W r =8µm, h=2µm, d=1,000å, W e =20µm, V P =35V s

25 Anchor Dissipation in Clamped-Clamped Beams Transmission [db] MHz Q=8,000 Anchor Frequency [MHz] L r =40.8µm, W r =8µm, h=2µm, d=1,000å, W e =20µm, V P =35V f o Q Transmission [db] MHz Q= Frequency [MHz] L r =14µm, W r =8µm, h=2µm, d=300å, W e =7µm, V P =35V s 92 MHz Free-Free Beam µresonator Free-free beam µmechanical with non-intrusive supports reduce anchor dissipation higher Q Drive Support Beams 74 µm Flexural-Mode Beam 13.1µm 1µm Anchor Ground Plane and Sense Design/Performance: L r =13.1µm, W r =6µm h=2µm, d=1000å V P =28V, W e =2.8µm f o ~92.25MHz 10mTorr [Wang, Yu, Nguyen 1998] 10.4µm Transmission [db] Frequency [MHz] MHz Q = 7,450

26 Outline Background: Target Application need for high-q Medium Q Passives: VCO micromechanical capacitors micromachined inductors High Q Passives: IF and RF Filters micromechanical s micromechanical filters frequency extension Conclusions MEMS vs. SAW Comparison Resonator Beam MEMS Resonator SAW Resonator Anchor Quartz Substrate Interdigital Transducers 1 cm 5 µm 1000X Magnification Silicon Die 1 cm 1 cm MEMS offers the same or better high-q frequency selectivity with orders of magnitude smaller size

27 Switchable, Tunable Micromechanical Filters Input Input Resonator Freq. Pulling Anchor Coupling Spring Output Output Resonator Freq. Pulling v i v o V i f Vo f V i f V o f V switch Res. frequency vs. Vp [Lr=60um, d=1000a] v i v o fr (Hz) fr(measured value) fr ( Fitting Value, with Alpha = 0.31) Vp (v) f o =7% V switch v i = input voltage v o = output voltage V i f, V o f = freq. pulling voltages V switch = bias and on/off switch voltage Front-End Channel Selection Observation: Higher RF selectivity relaxes linearity and phase noise specifications for subsequent stages rather than select a band of channels, select individual channels right at RF Approach: Use a highly selective low-loss filter that is tunable from channel to channel: Signal Power Antenna Problem: High filter selectivity (i.e., high Q) often precludes tunability ω

28 Parallel Bank of Switchable Filters Rather than cover the band by tuning, cover with a bank of switchable filters Signal Power Filter On Antenna Problem: macroscopic high-q filters are too big Requirement: tiny filters micromechanical high-q filters present a good solution ω Micromechanical RF Channel-Selector Use a massively parallel array of tunable, switchable filters suppress adjacent channel interferers relax dynamic range requirements in subsequent stages Micromechanical Switches Within Antenna Switchable Matching Network Mode Filter 1 Filter 2 Filter n Parallel Bank of Tunable/ Switchable Micromechanical Filters Relaxed linearity and phase noise specifications LNA Mixer VCO Reference Oscillator Frequency and Switch Control Electronics substantial power savings Baseband Electronics Micromechanical Resonators Within

29 Conclusions High-Q functionality required in communication transceivers presents a major bottleneck against ultimate miniaturization and power reduction Micromechanical L s and tunable C s offer improved Q performance over on-chip alternatives and can be applied advantageously to VCO s and tuning/matching networks With Q s in the thousands, µmechanical s can serve well as miniaturized high-q on-chip tanks for use in extremely sharp IF and RF filters With µmechanical components the number of frequency selective components no longer needs to be minimized encourages architectures that trade power for Q Micromechanical Signal Processors Micromechanical advantages: orders of magnitude smaller size better performance than other single-chip solutions methods for batch fabrication and integration with ckts. zero dc power consumption potentially large reduction in power consumption alternative transceiver architectures for improved performance Research Issues: frequency extension to UHF and beyond stability enhancement (w/r to temperature, aging, mass loading, etc....) manufacturing aides: (automated) frequency tuning/ trimming, CAD tool development dynamic range optimization cost-effective integration with electronics transceiver architecture exploration, harnessing the size and zero dc power consumption advantages

30 Acknowledgments B. Boser, D. Young (UC Berkeley): tunable C s and L s Former and present graduate students, especially Kun Wang, Frank Bannon III, and Ark-Chew Wong, who are largely responsible for the micromechanical filter work My government funding sources: DARPA, NASA/JPL, NSF, and an ARO MURI