ZXTDC3M832. MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
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1 MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LO SATURATION TRANSISTOR COMBINATION SUMMARY NPN O = 50V; R SAT = 68m ; C = 4A PNP O =-40V; R SAT = 104m ; C = -3A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4 th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom 0.9mm) Reduced component count C2 C1 FEATURES Low Equivalent On Resistance Extremely Low Saturation B2 B1 h FE characterised up to 6A =4A Continuous Collector Current 3mm x 2mm MLP APPLICATIONS DC - DC Converters E2 E1 Charging circuits Power switches PINOUT Motor control CCFL Backlighting ORDERING INFORMATION DEVICE REEL TAPE IDTH DEVICE MARKING DC3 QUANTITY PER REEL ZXTDC3M832TA 7 8mm 3000 ZXTDC3M832TC 13 8mm mm x 2mm MLP underside view 1
2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base V CBO V Collector-Emitter O V Emitter-Base V EBO V Peak Pulse Current M 6-4 A Continuous Collector Current (a)(f) 4-3 A Base Current I B 1000 ma Power Dissipation at TA= (a)(f) Power Dissipation at TA= (b)(f) Power Dissipation at TA= (c)(f) Power Dissipation at TA= (d)(f) Power Dissipation at TA= (d)(g) Power Dissipation at TA= (e)(g) P D P D P D 1 8 P D P D P D 3 24 Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θja 83.3 C/ Junction to Ambient (b)(f) R θja 51 C/ Junction to Ambient (c)(f) R θja 125 C/ Junction to Ambient (d)(f) R θja 111 C/ Junction to Ambient (d)(g) R θja 73.5 C/ Junction to Ambient (e)(g) R θja 41.7 C/ Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250 C/ giving a power rating of Ptot = 500m. 2
3 TYPICAL CHARACTERISTICS Limited DC 1s 100ms 10ms Note (a)(f) 1ms 100us Single Pulse, T amb = Collector-Emitter NPN Safe Operating Area 10 Limited 1 DC 1s ms 10ms Note (a)(f) 1ms 100us 0.01 Single Pulse, T amb = Collector-Emitter PNP Safe Operating Area Thermal Resistance ( C/) 80 Note (a)(f) 60 D= D= Single Pulse D=0.05 D= µ k Pulse idth (s) Transient Thermal Impedance Max Power Dissipation () oz Cu T amb = Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g) 0.5 1oz Cu Note (d)(f) Temperature ( C) Derating Curve P D Dissipation () T amb = T jmax =150 C Continuous 2oz copper Note (f) 2oz copper Note (g) 1oz copper 0.5 1oz copper Note (g) Note (f) Board Cu Area (sqcm) Power Dissipation v Board Area Thermal Resistance ( C/) oz copper Note (f) 1oz copper Note (g) oz copper 50 Note (f) 25 2oz copper Note (g) Board Cu Area (sqcm) Thermal Resistance v Board Area 3
4 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V (BR)CBO V =100 A Collector-Emitter Breakdown V (BR)CEO V =10mA* Emitter-Base Breakdown V (BR)EBO V I E =100 A Collector Cut-Off Current BO 25 na V CB =80V Emitter Cut-Off Current I EBO 25 na V EB =6V Collector Emitter Cut-Off Current ES 25 na S =40V Collector-Emitter Saturation (sat) =0.1A, I B =10mA* =1A, I B ma* =1A, I B =10mA* =2A, I B ma* =3A, I B =100mA* =4A, I B =200mA* Base-Emitter Saturation V BE(sat) 0 5 V =4A, I B =200mA* Base-Emitter Turn-On V BE(on) V =4A, =2V* Static Forward Current Transfer Ratio h FE =10mA, =2V* =0.2A, =2V* =1A, =2V* =2A, =2V* =6A, =2V* Transition Frequency f T MHz ma, =10V f=100mhz Output Capacitance C obo pf V CB =10V, f=1mhz Turn-On Time t (on) 170 ns V CC =10V, =1A Turn-Off Time t (off) 750 ns I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% 4
5 NPN CHARACTERISTICS 100m 10m Tamb= =100 = m 10 v v Normalised Gain =2V h FE v Typical Gain (h FE ) V BE(SAT) 10 V BE(SAT) v =2V V BE(ON) 10 V BE(ON) v 5
6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V (BR)CBO V =-100 A Collector-Emitter Breakdown V (BR)CEO V =-10mA* Emitter-Base Breakdown V (BR)EBO V I E =-100 A Collector Cut-Off Current BO -25 na V CB =-40V Emitter Cut-Off Current I EBO -25 na V EB =-6V Collector Emitter Cut-Off Current ES -25 na S =-32V Collector-Emitter Saturation (sat) =-0.1A, I B =-10mA* =-1A, I B =-50mA* =-1.5A, I B =-100mA* =-2A, I B =-200mA* =-2.5A, I B =-250mA* Base-Emitter Saturation V BE(sat) V =-2.5A, I B =-250mA* Base-Emitter Turn-On V BE(on) V =-2.5A, =-2V* Static Forward Current Transfer Ratio h FE =-10mA, =-2V* =-0.1A, =-2V* =-1A, =-2V* =-1.5A, =-2V* =-3A, =-2V* Transition Frequency f T MHz =-50mA, =-10V f=100mhz Output Capacitance C obo pf V CB =-10V, f=1mhz Turn-On Time t (on) 40 ns V CC =-15V, =-0.75A Turn-Off Time t (off) 435 ns I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% 6
7 PNP CHARACTERISTICS 1 Tamb= m =100 10m =10 v v Normalised Gain h FE v =2V Typical Gain (h FE ) V BE(SAT) V BE(SAT) v =2V V BE(ON) 0.2 V BE(ON) v 7
8 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM MIN. MAX. MIN. MAX. DIM MIN. MAX. MIN. MAX. A e 5 REF BSC A E 2.00 BSC BSC A E A E b L b L D 3.00 BSC BSC r BSC BSC D D Zetex plc 2002 Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) Fax: (44) uksales@zetex.com Zetex GmbH Streitfeldstraße 19 D München Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) Fax: (631) usa.sales@zetex.com Zetex (Asia) Ltd Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) Fax: (852) asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to 8
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