Thyristor High Voltage, Phase Control SCR, 40 A

Transcription

1 S-40TPS6PbF, S-40TPS6-M3 Thyristor High oltage, Phase ontrol SR, 40 FETURES 2 () High voltage (up to 600 ) Designed and qualified according to JEDE -JESD47 25 max. operating junction temperature TO (K) (G) 3 Material categorization: For definitions of compliance please see vailable PRODUT SUMMRY Package TO-247 Diode variation Single SR I T() 35 DRM / RRM 600 TM.45 I GT 50 m T J -40 to 25 PPLITIONS Typical usage is in input rectification crowbar (soft start) and switch in motor control, UPS, welding and battery charge DESRIPTION The S-40TPS6... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 junction temperature. MJOR RTINGS ND HRTERISTIS PRMETER TEST ONDITIONS LUES UNITS I T() Sinusoidal waveform 35 I RMS 55 RRM / DRM 600 I TSM 500 T 40, T J = d/dt 000 /μs di/dt 00 /μs T J -40 to 25 OLTGE RTINGS PRT NUMBER RRM / DRM, MXIMUM REPETITIE PEK ND OFF-STTE OLTGE RSM, MXIMUM NON-REPETITIE PEK REERSE OLTGE I RRM /I DRM T 25 m S-40TPS6PbF, S-40TPS6-M Revision: 06-Feb-4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

2 S-40TPS6PbF, S-40TPS6-M3 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS LUES UNITS Maximum average on-state current I T() T = 79, 80 conduction half sine wave 35 Maximum continuous RMS I T(RMS) 55 on-state current as switch Maximum peak, one-cycle 0 ms sine pulse, rated RRM applied 420 I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied 500 Maximum I 2 t for fusing I 2 t 0 ms sine pulse, rated RRM applied Initial T J = T J maximum ms sine pulse, no voltage reapplied s Maximum I 2 t for fusing I 2 t t = 0. to 0 ms, no voltage reapplied s Low level value of threshold voltage T(TO).02 High level value of threshold voltage T(TO)2.23 T J = 25 Low level value of on-state slope resistance r t 9.74 m High level value of on-state slope resistance r t Maximum peak on-state voltage TM 0, T J = Maximum rate of rise of turned-on current di/dt T J = /µs Maximum holding current I H node supply = 6, resistive load, initial I T =, T J = Maximum latching current I L node supply = 6, resistive load, T J = m T J = Maximum reverse and direct leakage current I RRM /I DRM R = Rated RRM / DRM T J = 25 0 Maximum rate of rise of off-state voltage d/dt T J = T J maximum, linear to 80 % DRM, R g - k = Open 000 /µs TRIGGERING PRMETER SYMBOL TEST ONDITIONS LUES UNITS Maximum peak gate power P GM 0 Maximum average gate power P G() 2.5 W Maximum peak gate current I GM 2.5 Maximum peak negative gate voltage - GM 0 GT Maximum required D gate voltage to trigger T J = 25 node supply = 6 resistive load 2.5 T J = T J = 25.7 T J = Maximum required D gate current to trigger I GT T J = 25 node supply = 6 resistive load 50 T J = m T J = 25, for 40TPS08 40 Maximum D gate voltage not to trigger GD 0.25 T J = 25, DRM = Rated value Maximum D gate current not to trigger I GD 6 m Revision: 06-Feb-4 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

3 S-40TPS6PbF, S-40TPS6-M3 THERML ND MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS LUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to 25 Maximum thermal resistance, junction to case R thj D operation 0.6 Maximum thermal resistance, junction to ambient Maximum thermal resistance, case to heatsink pproximate weight R thj 40 R ths Mounting surface, smooth and greased 0.2 /W 6 g 0.2 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 (0) (lbf in) Marking device ase style TO TPS6 Maximum llowable ase Temperature ( ) 30 R thj(d) = 0.6 / W 20 0 onduction ngle Maximum verage On-state Power Loss (W) RMS Limit onduction ngle 40TPS.. Serie s T = 25 J verage On-state urrent () verage On-state urrent () Fig. - urrent Rating haracteristics Fig. 3 - On-State Power Loss haracteristics Maximum llowable ase Temperature ( ) R thj(d) = 0.6 /W onduction Period D Maximum verage On-state Power Loss (W) D RMS Limit onduction Period T = 25 J verage On-state urrent () verage On-state urrent () Fig. 2 - urrent Rating haracteristics Fig. 4 - On-State Power Loss haracteristics Revision: 06-Feb-4 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

4 S-40TPS6PbF, S-40TPS6-M3 Peak Half Sine Wave Forward urrent () t any rated load condition and with rated RRM applied following surge. Initial T J = 50 at 60 Hz s at 50 Hz s Peak Half Sine Wave Forward urrent () Maximum non-repetitive surge current versus pulse train duration. Initial T J = 50 No voltage reapplied Rated RRM reapplied S Number of Equal mplitude Half ycle urrent Pulses (N) 200 S Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge urrent Fig. 6 - Maximum Non-Repetitive Surge urrent 00 Instantaneous On-state urrent () 0 T J= 25 T J= 25 40TPS.. Se rie s Instantaneous On-state oltage () Fig. 7 - On-State oltage Drop haracteristics Instantaneous Gate oltage () 00 Rectangular gate pulse a)recommended load line for rated di/ dt: 20, 30 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/dt: 20, 65 ohms 0 tr = µs, tp >= 6 µs (a) (b) GD TJ = 25 TJ = 25 TJ = -40 IGD 40TPS.. Frequency Limited by PG() Instantaneous Gate urrent () Fig. 8 - Gate haracteristics () PGM = 00 W, tp = 500 µs (2) PGM = 50 W, tp = ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 0 W, tp = 5 ms (4) (3) (2) () Revision: 06-Feb-4 4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

5 S-40TPS6PbF, S-40TPS6-M3 Transient Thermal Impedance Z thj ( / W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Sin g le Pu lse Steady State alue (D Operation) Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thj haracteristics ORDERING INFORMTION TBLE Device code S- 40 T P S 6 PbF product 2 - urrent rating (40 = 40 ) 3 - ircuit configuration: T = Thyristor 4 - Package: 5 - P = TO-247 Type of silicon: S = Standard recovery rectifier 6 - oltage rating (6 = 600 ) 7 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION S-40TPS6PbF ntistatic plastic tubes S-40TPS6-M ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOUMENTS TO-247 PbF TO-247 -M Revision: 06-Feb-4 5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

6 TO mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 0.0 M D B M 2 x b2 3 x b 0.0 M M b4 2 x e iew - Plating (b, b3, b5) Base metal DDE E (c) c (b, b2, b4) (4) Section -, D - D, E - E iew B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS 0.25 BS b Ø K b L b L b Ø P b Ø P c Q c R D S 5.5 BS 0.27 BS D Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 20-pr-7 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

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