Product Data Sheet XO5029 series KHz Crystal Oscillorator IC. Features. Application. Ordering Information. Description.
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1 Features Wide range of operating supply voltage: 1.5V to 5.5V Low crystal drive current oscillation for miniature crystal units Low power consumption(0.18ma/1.8v) XO5029Bx series: for Wire Bonding (type Ⅰ) XO5029Cx series: for Wire Bonding (type Ⅱ) -40 to 85 operating temperature range Crystal frequency MHz Output Freq: Crystal Freq divided by 512 Very low standby current 50±2% output duty cycle 15pF output drive capability Die form or Wafer form Description The are miniature crystal oscillator module ICs. The oscillator circuit stage has constant current drive, significantly reducing current consumption and crystal current, compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. Application KHz Crystal Oscillator 7050, 5032, 3225, 2520, 2016 crystal oscillator Ordering Information Part no. Package type XO5029x-zWF Wafer form XO5029x-zDE Die form Note: 1.Below is the detailed definition of part no. Note: 2. z: -2(220um) or -3(130um), -4(100um),-5(150um) Block Diagram VDD GND INH N CC R F XT divider CMOS Q R D C G C G XTN DS RayStar Microelectronics Technology Inc.
2 Function Description Standby Function When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance. INHN Q Oscillator HIGH (or open) fo output frequency Normal operation Low High impedance Stopped Power-saving Pull-up Resistor The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level(high or LOW). When INHN is tied LOW level, the pull-up resistance is large(rup1),reducing the current consumed by the resistance. When INHN is left open circuit, the pull-up resistance is small(rup2),which increases the input susceptibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output. DS RayStar Microelectronics Technology Inc.
3 Pad Configuration Sensor Sensor 1 VDD Q 6 1 Q GND 6 2 INHN GND 5 2 VDD INHN 5 XT XTN XTN XT (0,0) XO5029C XO5029B Pad Coordinate File Pad Name X Coordinate Y Coordinate Pad Name X Coordinate Y Coordinate sensor Note: Substrate is connected to GND or floating. Die Size: 760 m*700 m (Including scribe line size 80 m*80 m.) Die Thickness: 130 m 15 m(-3) or 220um 20um(-2), 100um 15um(-4), 150um+/-15um(-5) Pad Size: 90 m*90 m Substrate Level: GND or Floating Pad Description Sym. Type Description XTN O Amplifier output. XT I Amplifier input. Crystal oscillator connected between XT and XTN INHN I Output state control input. Output High when LOW. Power-saving pull-up resistor built in. V DD P Supply voltage GND P Ground Q O Output. Output frequency determined by fundamental crystal(f0 divided by 512) DS RayStar Microelectronics Technology Inc.
4 Maximum Ratings Storage Temperature o C to +150 o C Supply Voltage to Ground Potential (V DD to GND) V to +6.5V DC Input (All Other Inputs except V DD & GND) V to V DD +0.5V DC Output V to V DD +0.5V DC Output Current (all outputs)... 20mA Recommended Operating Conditions (GND=0V, unless otherwise noted.) Sym. Parameter Conditions Min Typ Max Unit V DD Supply voltage V T A Operating temperature C f 0 Oscillation frequency * MHz DS RayStar Microelectronics Technology Inc.
5 DC Electrical Characteristics XO5029(V DD = 1.50 to 5.5V, T A = -40 to 85 C, unless otherwise noted.) Parameter Sym Conditions Min Typ Max Unit HIGH-level output voltage V OH I OH =1mA V DD LOW-level output voltage V OL I OL =1mA V HIGH-level input voltage V IH OE Measurement 0.7Vcc - - LOW-level input voltage V IL OE Measurement V Operating current I CC Vdd=1.8V ma Operating Current I cc Vdd=3.0V ma Standby Current Isb OE=off 10 ua - - OE pull-up resistance R PULL V DD = 3.3V MΩ Output leakage current I Z OE=OFF V O =V DD µa AC Characteristics XO5029C/B, T A =-40 to 85 unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Output Disable Delay t OD Output Disable Function (OE) ns Output Enable Delay t STR Output Enable Function (OE) ms Output rise time t r1 C L =15Pf, 0.1V DD to 0.9V DD V DD =3.3V ns Output fall time t f1 C L =15Pf, 0.1V DD to 0.9V DD V DD =3.3V ns Output duty cycle Duty T A =25, C L =15pF % V DD Sensitivity Frequency vs. VDD+/- 10% -2 2 ppm Frequency vs. V DD +/-10% ppm OSC frequency range f R Fundamental Crystal MHz Crystal Specifications Parameters Sym Conditions Min Typ Max Units Fundamental Crystal Resonator Frequency F XIN MHz Crystal Loading Rating (The IC can be programmed for any value in this range) C L(XTAL) pf Maximum Sustainable Drive Level μw Operating Drive Level μw Crystal Shunt capacitance C O pf Effective Series Resistance, Fundamental, 10-50MHz ESR Ω DS RayStar Microelectronics Technology Inc.
6 AC Electrical Characteristics Output switching waveform 0.9V DD T W 0.5V DD 0.1V DD T t f t r DUTY=TW/T 100(%) Output disable and oscillation start timing chart INHN V IL V IH t OD t STR Q output 0.1V Normal operation Output stopped Hi-Z* Normal operation When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance. When INHN goes LOW to HIGH, the Q output from high impedance to normal output operation when the oscillation starts (oscillation is detected) *: the high impedance interval in the figure is shown as a LOW level due to the 1KΩ pull-down resistor connected to the Q pin(see Measurement circuit 2 in the Measurement circuits section) DS1204 RayStar Microelectronics Technology Inc. 6
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