High Voltage, Input Rectifier Diode, 40 A

Transcription

1 PbF, VS-4PS16PbF, -M3, VS-4PS16-M3 High Voltage, Input Rectifier iode, 4 TO-247 modified Base cathode athode node PbF -M3 TO-247 Base cathode node - - node VS-4PS16PbF VS-4PS16-M3 PROUT SUMMRY Package TO-247 modified (2 pins), TO-247 I F(V) 4 V R 16 V V F at I F 1.14 V I FSM 475 T J max. 15 iode variation Single die FTURS Very low forward voltage drop 15 max. operating junction temperature esigned and qualified according to J -JS47 Material categorization: for definitions of compliance please see /doc?99912 vailable PPLITIONS Input rectification switches and output rectifiers which are available in identical package outlines SRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). MJOR RTINGS N HRTRISTIS HRTRISTIS VLUS UNITS I F(V) Sinusoidal waveform 4 V RRM 16 V I FSM 475 V F 2, T J = V T J -4 to +15 VOLTG RTINGS PRT NUMBR PbF, -M3, VS-4PS16PbF, VS-4PS16-M3 V RRM, MXIMUM PK RVRS VOLTG V V RSM, MXIMUM NON-RPTITIV PK RVRS VOLTG V I RRM T 15 m BSOLUT MXIMUM RTINGS PRMTR TST ONITIONS VLUS UNITS Maximum average forward current I F(V) T = 15, 18 conduction half sine wave 4 Maximum peak one cycle 1 ms sine pulse, rated V RRM applied 4 I FSM non-repetitive surge current 1 ms sine pulse, no voltage reapplied 475 Maximum I 2 t for fusing I 2 1 ms sine pulse, rated V RRM applied 8 t 2 s 1 ms sine pulse, no voltage reapplied 1131 Maximum I 2 t for fusing I 2 t t =.1 ms to 1 ms, no voltage reapplied s Revision: 1-ug-14 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

2 PbF, VS-4PS16PbF, -M3, VS-4PS16-M3 LTRIL SPIFITIONS PRMTR TST ONITIONS VLUS UNITS Maximum forward voltage drop V FM 4, T J = V Forward slope resistance r t 7.6 m T J = 15 Threshold voltage V F(TO).72 V T J = 25.1 Maximum reverse leakage current I RM V R = Rated V RRM T J = m THRML - MHNIL SPIFITIONS PRMTR TST ONITIONS VLUS UNITS Maximum junction and storage temperature range T J, T Stg -4 to +15 Maximum thermal resistance, junction to case R thj operation.6 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thj 4 R ths Mounting surface, flat, smooth and greased.2 /W 6 g.21 oz. minimum 6 (5) kgf cm maximum 12 (1) (lbf in) ase style TO-247 modified (J) 4PS16 4PS16 Maximum llowable ase Temperature ( ) R thj () =.6 K/W onduction angle Maximum llowable ase Temperature ( ) R thj () =.6 K/W 9 12 onduction period verage Forward urrent () verage Forward urrent () Fig. 1 - urrent Rating haracteristics Fig. 2 - urrent Rating haracteristics Revision: 1-ug-14 2 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

3 PbF, VS-4PS16PbF, -M3, VS-4PS16-M3 Maximum verage Forward Power Loss (W) RMS limit onduction angle T J = Instantaneous Forward urrent () T J = 25 T J = verage Forward urrent () Instantaneous Forward Voltage (V) Fig. 3 - Forward Power Loss haracteristics Fig. 5 - Forward Voltage rop hacteristics Maximum verage Forward Power Loss (W) RMS limit onduction period T J = 15 Peak Half Sine Wave Forward urrent () Maximum non-repetitive surge current versus pulse train duration. Initial T J = 15 No voltage reapplied Rated V RRM reapplied verage Forward urrent () Pulse Train uration (s) Fig. 4 - Forward Power Loss haracteristics Fig. 6 - Maximum Non-Repetitive Surge urrent 1 Z thj - Transient Thermal Impedance ( /W).1 Single pulse =.5 =.33 =.25 =.17 =.8 Steady state value ( operation) Square Wave Pulse uration (s) Fig. 7 - Thermal Impedance Z thj haracteristics Revision: 1-ug-14 3 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

4 PbF, VS-4PS16PbF, -M3, VS-4PS16-M3 ORRING INFORMTION TBL evice code VS- 4 P S 16 PbF product 2 - urrent rating (4 = 4 ) 3 - ircuit configuration: 4 - = single diode, 3 pins = single diode, 2 pins Package: 5 - P = TO-247 modified Type of silicon: S = standard recovery rectifier 6 - Voltage rating (16 = 16 V) 7 - nvironmental digit: PbF = lead (Pb)-free and RoHS compliant -M3 = halogen-free, RoHS compliant and terminations lead (Pb)-free ORRING INFORMTION (xample) PRFRR P/N QUNTITY PR T/R MINIMUM ORR QUNTITY PKGING SRIPTION PbF 25 5 ntistatic plastic tubes -M ntistatic plastic tubes VS-4PS16PbF 25 5 ntistatic plastic tubes VS-4PS16-M ntistatic plastic tubes imensions Part marking information LINKS TO RLT OUMNTS TO-247 modified TO-247 TO-247 modified PbF TO-247 modified -M3 TO-247 PbF TO-247 -M3 /doc?95541 /doc?95542 /doc?95255 /doc?95442 /doc?95226 /doc?957 Revision: 1-ug-14 4 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

5 Outline imensions IMNSIONS in millimeters and inches B (2) R/2 Q (3) N S 2 (6) ΦP (atum B) K M B M ΦP1 2 2 x R (2) 1 Thermal pad 4 (5) L1 L See view B 1 2 x b2 3 x b.1 M M b4 2 x e 1 View - Planting (c) (b1, b3, b5) Base metal c1 Lead assignments iodes 1. - node/open 2. - athode 3. - node (b, b2, b4) Section -, -, - View B MILLIMTRS INHS MILLIMTRS INHS MIN. MX. MIN. MX. MIN. MX. MIN. MX b e 5.46 BS.215 BS b K b L b L b N 7.62 BS.3 b P c P c Q R S 5.51 BS.217 BS Notes (1) imensioning and tolerance per SM Y14.5M-1994 (2) ontour of slot optional (3) imension and do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and 1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.154") (7) Outline conforms to J outline TO-247 with exception of dimension c Revision: 21-Jun-11 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

6 IMNSIONS in millimeters and inches TO-247 modified Outline imensions B (2) R/2 Q (3) N S 2 (6) P (atum B) K M B M P1 2 2 x R (2) 1 Thermal pad 4 (5) L1 L See view B 1 2 x b2 3 x b.1 M M b4 2 x e 1 View - Planting (b1, b3, b5) Base metal (c) c1 (b, b2, b4) Section -, -, - View B MILLIMTRS INHS MILLIMTRS INHS MIN. MX. MIN. MX. MIN. MX. MIN. MX b e 5.46 BS.215 BS b K b L b L b N 7.62 BS.3 b P c P c Q R S 5.51 BS.217 BS Notes (1) imensioning and tolerance per SM Y14.5M-1994 (2) ontour of slot optional (3) imension and do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and 1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.154") (7) Outline conforms to J outline TO-247 with exception of dimension c and Q Revision: 24-Sep-13 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodesurope@vishay.com THIS OUMNT IS SUBJT TO HNG WITHOUT NOTI. TH PROUTS SRIB HRIN N THIS OUMNT R SUBJT TO SPIFI ISLIMRS, ST FORTH T /doc?91

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