IDTF2255NLGK8. IDTF2255NLGK Datasheet PART# MATRIX FEATURES GENERAL DESCRIPTION DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE ORDERING INFORMATION

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1 GENERAL DESCRIPTION The IDTF2255 is a low insertion loss Voltage Variable RF Attenuator (VVA) designed for a multitude of wireless and other RF applications. This device covers a broad frequency range from 1MHz to 3MHz. In addition to providing low insertion loss, the IDTF2255 provides excellent linearity performance over its entire voltage control and attenuation range. The F2255 uses a single positive supply voltage of 3.15V to 5.25V. Other features include the VMODE pin allowing either positive or negative voltage control slope vs attenuation and multi-directional operation meaning the RF input can be applied to either RF1 or RF2 pins. Control voltage ranges from V to 3.6V using either positive or negative control voltage slope. COMPETITIVE ADVANTAGE IDTF2255 provides extremely low insertion loss and superb IP3, IP2, Return Loss and Slope Linearity across the control range. Comparing to competitive VVAs this device is better as follows: APPLICATIONS Operation down to 1MHz Insertion MHz: 1.1dB Maximum Attenuation Slope: 33dB/Volt Minimum Output IP3: 35dBm Minimum Input IP2: 74dBm High Operating Temperature: +15 C Base Station 2G, 3G, 4G Portable Wireless Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure Public Safety Infrastructure Satellite Receivers and Modems WIMAX Receivers and Transmitters Military Radios covering HF, VHF, UHF RFID handheld and portable readers Cable Infrastructure Wireless LAN Test / ATE Equipment FEATURES 1MHz to 3MHz Low Insertion Loss: MHz Typical / Min IIP3: dbm / 46dBm Typical / Min IIP2: 98dBm / 74dBm 33dB Attenuation Range Bi-directional RF ports +36dBm Input P1dB compression VMODE pin allows either positive or negative control response Linear-in-dB attenuation characteristic Supply voltage: 3.15V to 5.25V VCTRL range: V to 3.6V using 5V supply +15 C max operating temperature 3mm x 3mm, 16-pin QFN package DEVICE BLOCK DIAGRAM RF1 ORDERING INFORMATION PART# MATRIX Part# Omit IDT prefix VMODE RF Freq Range (MHz) Insertion Loss (db) IIP3 (dbm) Pinout Compatibility F (at 2GHz) +65 RFMD F (at MHz) + VDD Control IDTF2255NLGK8 RF product Line VCTRL.9 mm height package Green RF2 Tape & Reel F (at 2GHz) +65 Hittite 218 Integrated Device Technology, Inc. 1 Rev 2, February 9, 218

2 1MHz to 3MHz ABSOLUTE MAXIMUM RATINGS Parameter / Condition Symbol Min Max Units VDD to GND VDD V VMODE to GND VMODE -.3 Minimum ( VDD, 3.9 ) V VCTRL to GND VDD = V to 5.25V VCTRL -.3 Minimum ( VDD, 4. ) V RF1, RF2 to GND VRF V RF1 or RF2 Input Power applied for 24 hours maximum (VDD 2GHz and Tc=+85 C) PMAX24 3 dbm RF1 or RF2 Continuous Operating Power PMAX_OP See Figure 1 dbm Maximum Junction Temperature TJMAX +1 C Storage Temperature Range TST C Lead Temperature (soldering, 1s) TLEAD +2 C ESD Voltage HBM (Per ESD STM5.1-27) VESDHBM Class 2 ESD Voltage CDM (Per ESD STM ) VESDCDM Class C3 FIGURE 1: MAXIMUM OPERATING RF INPUT POWERS VS. RF FREQUENCY Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS ΘJA (Junction Ambient) 8.6 C/W ΘJC (Junction Case) The Case is defined as the exposed paddle 5.1 C/W Moisture Sensitivity Rating (Per J-STD-2) MSL Integrated Device Technology, Inc. 2 Rev 2, February 9, 218

3 1MHz to 3MHz IDTF2255 OPERATING CONDITIONS Parameter Symbol Condition Min Typ Max Units Operating Frequency Range FRF 1 3 MHz Supply Voltage VDD V VDD > 3.9V VIH VMODE Logic VDD = 3.15 to 3.9V 1.17 VDD -.3V V VIL.63 VCTRL Range VCTRL VDD = 3.9V to 5.25V 3.6 VDD = 3.15V to 3.9V VDD-.3 V Supply Current IDD ma Logic Current IMODE μa ICTRL Current ICTRL μa RF Operating Power 3 PMAXCW See Figure 1 dbm RF1 Port Impedance ZRF1 RF2 Port Impedance ZRF2 Ω Operating Temperature Exposed Paddle TCASE Range Temperature C Operating Conditions Notes: 1 Items in min/max columns in bold italics are Guaranteed by Test. 2 Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. 3 Refer to the Maximum Operating RF Input Power vs. RF Frequency curves in Figure Integrated Device Technology, Inc. 3 Rev 2, February 9, 218

4 1MHz to 3MHz IDTF2255 SPECIFICATIONS Refer to EVKit / Applications Circuit, VDD = +3.3V, TC = +25 C, signals applied to RF1 input, FRF = MHz, minimum attenuation, PIN = dbm for small signal parameters, +2dBm for single tone linearity tests, +2dBm per tone for two tone tests, two tone delta frequency = 8MHz, PCB board traces and connector losses are de-embedded unless otherwise noted. Refer to Typical Operating Curves for performance over entire frequency band. Parameter Symbol Condition Min Typ Max Units Insertion Loss, IL AMIN Minimum Attenuation db Maximum attenuation AMAX db Insertion Phase Δ ΦΔMAX At 36dB attenuation relative to Insertion Loss 27 ΦΔMID At 18dB attenuation relative to Insertion Loss 8 deg Input 1dB Compression 3 P1dB 36 dbm 2MHz 23 Minimum RF1 Return Loss over control voltage range Minimum RF2 Return Loss over control voltage range S11 S22 MHz 22 2MHz 23 3MHz 3 2MHz 23 MHz 22 2MHz 23 3MHz 24 Input IP3 IIP3 Input IP3 over Attenuation IIP3ATTEN All attenuation settings dbm Minimum Output IP3 OIP3MIN Maximum attenuation 35 Input IP2 IIP2 PIN + IM2dBC, IM2 term is F1+F2 98 dbm Minimum Input IP2 IIP2MIN All attenuation settings 74 dbm Input IH2 HD2 PIN + H2dBc 82 dbm Input IH3 HD3 PIN + (H3dBc/2) 49 dbm Settling Time TSETTL.1dB Any 1dB step in the db to 33dB control range % VCTRL to RF settled to within ±.1dB 15 μsec Specification Notes: 1 Items in min/max columns in bold italics are Guaranteed by Test. 2 Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. 3 The input 1dB compression point is a linearity figure of merit. Refer to Absolute Maximum Ratings section along with Figure 1 for the maximum RF input power vs. RF frequency. db db 218 Integrated Device Technology, Inc. 4 Rev 2, February 9, 218

5 1MHz to 3MHz TYPICAL OPERATING CURVES UNLESS OTHERWISE NOTED, THE FOLLOWING CONDITIONS APPLY: V DD = +3.3V or +5.V T C = +25ºC V MODE = V RF trace and connector losses are de-embedded for S-parameters Pin = dbm for all small signal tests Pin = +2dBm for single tone linearity tests (RF1 port driven) Pin = +2dBm/tone for two tone linearity tests (RF1 port driven) Two tone frequency spacing = 8MHz 218 Integrated Device Technology, Inc. 5 Rev 2, February 9, 218

6 Attenuation Error (db) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS [S2P BROADBAND PERFORMANCE] (-1-) Attenuation vs. VCTRL V CTRL (Volts) / 1MHz / MHz / 1MHz / 2MHz / MHz / 9MHz / 12MHz / 19MHz / 2MHz Attenuation vs. Frequency /.V /.8V / 1.V / 1.2V / 1.4V / 1.6V / 1.8V / 2.2V / 2.8V Frequency (MHz) Attenuation Delta to vs. VCTRL C / 11MHz -C / 251MHz -C / 9MHz 15C / 11MHz 15C / 251MHz 15C / 9MHz 218 Integrated Device Technology, Inc. 6 Rev 2, February 9, 218

7 Insertion Phase (deg) Insertion Phase Slope (deg/v) RF1 Return Loss (db) RF2 Return Loss (db) Attenuation Slope (db/v) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CURVES [S2P VS. V CTRL ] (-2-) Attenuation vs. VCTRL 4MHz 15MHz -1 MHz 2MHz MHz 12MHz -2 21MHz Attenuation Slope vs. VCTRL MHz 15MHz 1 MHz 2MHz 5 MHz 12MHz 21MHz RF1 Return Loss vs. VCTRL 4MHz MHz MHz -1 21MHz 15MHz 2MHz 12MHz RF2 Return Loss vs. VCTRL 4MHz MHz MHz -1 21MHz 15MHz 2MHz 12MHz Insertion Phase vs. VCTRL MHz 15MHz MHz 2MHz MHz 12MHz 21MHz (positive phase = electrically shorter) Insertion Phase Slope vs. VCTRL MHz 15MHz MHz 2MHz MHz 12MHz 21MHz Integrated Device Technology, Inc. 7 Rev 2, February 9, 218

8 Insertion Phase (deg) Insertion Phase Slope (deg/v) RF1 Return Loss (db) RF2 Return Loss (db) Attenuation Slope (db/v) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS [S2P VS. V CTRL & TEMPERATURE] (-3-) Attenuation Response vs. VCTRL Attenuation Slope vs. VCTRL C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz RF1 Return Loss vs. VCTRL RF2 Return Loss vs. VCTRL C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz Insertion Phase vs. VCTRL C / 15MHz (positive phase = electrically shorter) -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz Insertion Phase Slope vs. VCTRL C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz Integrated Device Technology, Inc. 8 Rev 2, February 9, 218

9 Insertion Phase (deg) Insertion Phase (deg) RF2 Return Loss (db) RF2 Return Loss (db) RF1 Return Loss (db) RF1 Return Loss (db) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS [S2P VS. ATTENUATION & TEMPERATURE] (-4-) RF1 Return Loss vs. Attenuation / 4MHz / 15MHz / MHz / 2MHz / MHz / 12MHz -1 / 21MHz -2-3 RF1 Return Loss vs. Attenuation C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz RF2 Return Loss vs. Attenuation / 4MHz / 15MHz / MHz / 2MHz / MHz / 12MHz -1 / 21MHz Insertion Phase Δ vs. Attenuation 8 (positive phase = electrically shorter) / 4MHz / 15MHz / MHz / 2MHz / MHz / 12MHz / 21MHz RF2 Return Loss vs. Attenuation C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz Insertion Phase Δ vs. Attenuation C / 15MHz -C / MHz -C / 12MHz / 15MHz / MHz / 12MHz 15C / 15MHz 15C / MHz 15C / 12MHz Integrated Device Technology, Inc. 9 Rev 2, February 9, 218

10 Max Insertion Phase (deg) Gain Compression (db) Min/Max ATTN slope (db/v) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS [S2P VS. FREQUENCY] (-) Min. & Max. Attenuation vs. Frequency Min. & Max. Attenuation Slope vs. Frequency VCTRL varied from.8v to 1.7V max slope min slope Worst-Case RF1 Return Loss vs. Frequency Frequency (MHz) Worst-Case RF2 Return Loss vs. Frequency Max. Insertion Phase vs. Frequency (positive phase = electrically shorter) Gain Compression vs. Frequency 1 1MHz 125MHz 2MHz.5 MHz 1MHz 2MHz C 15C Frequency (MHz) RF Input Power (dbm) 218 Integrated Device Technology, Inc. 1 Rev 2, February 9, 218

11 Group Delay (picosec) RF1 Return Loss (db) RF2 Return Loss (db) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS LOW FREQUENCY, GROUP DELAY] (-6-) Min. & Max. Attenuation vs. Low Frequency Frequency (MHz) Low-Frequency RF1 Return Loss vs. VCTRL MHz 1.MHz 3.MHz 7.MHz 1.MHz.MHz 1.MHz Group Delay vs. Frequency.V 2.8V C /.8V -C / 1.8V /.8V / 1.8V 15C /.8V 15C / 1.8V Low-Frequency Attenuation vs. VCTRL Low-Frequency RF2 Return Loss vs. VCTRL MHz 1.MHz 3.MHz 7.MHz 1.MHz.MHz 1.MHz.5MHz 1.MHz 3.MHz 7.MHz 1.MHz.MHz 1.MHz Frequency (MHz) 218 Integrated Device Technology, Inc. 11 Rev 2, February 9, 218

12 IH2 (dbm) IH3 (dbm) Input IP2 (dbm) Output IP2 (dbm) Input IP3 (dbm) Output IP3 (dbm) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS MHZ, V DD =3.3V [IP3, IP2, IH2, IH3 VS. V CTRL, V MODE ] (-7-) Input IP3 vs. VCTRL 8 Output IP3 vs. VCTRL C / Vmode = V / Vmode = V 15C / Vmode = V -C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V C / Vmode = V / Vmode = V 15C / Vmode = V -C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V Input IP2 vs. VCTRL C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V -C / Vmode = V / Vmode = V 15C / Vmode = V 2 nd Harm Input Intercept Point vs. VCTRL C / Vmode = V / Vmode = V 15C / Vmode = V -C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V Output IP2 vs. VCTRL rd Harm Input Intercept Point vs. VCTRL C / Vmode = V / Vmode = V 15C / Vmode = V -C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V C / Vmode = V / Vmode = V 15C / Vmode = V -C / Vmode = 3V / Vmode = 3V 15C / Vmode = 3V 218 Integrated Device Technology, Inc. 12 Rev 2, February 9, 218

13 IH2 (dbm) IH3 (dbm) Input IP2 (dbm) Output IP2 (dbm) Input IP3 (dbm) Output IP3 (dbm) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS MHZ, V DD =3.3V [IPX, IHX VS. V CTRL, RF1/RF2 DRIVEN] (-8-) Input IP3 vs. VCTRL 8 Output IP3 vs. VCTRL -C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven Input IP2 vs. VCTRL nd Harm Input Intercept Point vs. VCTRL C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven Output IP2 vs. VCTRL rd Harm Input Intercept Point vs. VCTRL C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven 218 Integrated Device Technology, Inc. 13 Rev 2, February 9, 218

14 IH2 (dbm) IH3 (dbm) Input IP2 (dbm) Output IP2 (dbm) Input IP3 (dbm) Output IP3 (dbm) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS MHZ, V DD =3.3V [IP3, IP2, IH2, IH3 VS. ATTENUATION] (-9-) Input IP3 vs. Attenuation 8 Output IP3 vs. Attenuation 8 -C 15C -C C Input IP2 vs. Attenuation C 15C nd Harm Input Intercept Point vs. Attenuation Output IP2 vs. Attenuation 12 -C C rd Harm Input Intercept Point vs. Attenuation C 15C C 15C Integrated Device Technology, Inc. 14 Rev 2, February 9, 218

15 IH2 (dbm) IH3 (dbm) Input IP2 (dbm) Output IP2 (dbm) Input IP3 (dbm) Output IP3 (dbm) IDTF2255NLGK 1MHz to 3MHz TYPICAL OPERATING CONDITIONS MHZ, V DD =3.3V [IPX, IHX VS. ATTEN, RF1/RF2 DRIVEN] (-1-) Input IP3 vs. Attenuation 8 Output IP3 vs. Attenuation -C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven Input IP2 vs. Attenuation C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven 2 nd Harm Input Intercept Point vs. Attenuation Output IP2 vs. Attenuation rd Harm Input Intercept Point vs. Attenuation 9 8 -C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven Attenuation(dB) -C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven C / RF1 Driven / RF1 Driven 15C / RF1 Driven -C / RF2 Driven / RF2 Driven 15C / RF2 Driven 218 Integrated Device Technology, Inc. 15 Rev 2, February 9, 218

16 1MHz to 3MHz PACKAGE DRAWING (3MM X 3MM 16 PIN) 218 Integrated Device Technology, Inc. 16 Rev 2, February 9, 218

17 1MHz to 3MHz LAND PATTERN DRAWING 218 Integrated Device Technology, Inc. 17 Rev 2, February 9, 218

18 1MHz to 3MHz PINOUT & BLOCK DIAGRAM VMODE VDD VCTRL RTN RTN GND RTN NC GND 1 12 GND Control NC 2 11 NC RF1 3 1 RF2 NC 4 E.P. 9 NC Integrated Device Technology, Inc. 18 Rev 2, February 9, 218

19 1MHz to 3MHz PIN DESCRIPTION Pin Name Function 1, 7, 12 GND Ground these pins as close to the device as possible. 2, 4, 9, 11, 13 NC No internal connection. IDT recommends connecting these pins to GND. 3 RF1 RF Port 1. Matched to ohms. Must use an external AC coupling capacitor as close to the device as possible. For low frequency operation increase the capacitor value to result in a low reactance at the frequency of interest. 5, 6, 8 RTN 1 RF2 14 VCTRL 15 VDD 16 VMODE EP Attenuator Ground Return. Each of these pins require a capacitor to GND to provide an RF return path. Place the capacitor as close to the device as possible. RF Port 2. Matched to ohms. Must use an external AC coupling capacitor as close to the device as possible. For low frequency operation increase the capacitor value to result in a low reactance at the frequency of interest. Attenuator control voltage. Apply a voltage in the range as specified in the Operating Conditions Table. See application section for details about VCTRL. Power supply input. Bypass to GND with capacitors close as possible to pin. Attenuator slope control. Set to logic LOW to enable negative attenuation slope. Set to logic HIGH to enable positive attenuation slope. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to achieve the specified RF performance. 218 Integrated Device Technology, Inc. 19 Rev 2, February 9, 218

20 1MHz to 3MHz APPLICATIONS INFORMATION Default Start-up VCTRL VMODE VMODE must be tied to either GND or Logic High. If the VCTRL pin is left floating, the part will power up in the minimum attenuation state when VMODE = GND, or the maximum attenuation state when VMODE = High. The voltage level on the VCTRL pin is used to control the attenuation of the F2255. At VCTRL =V, the attenuation is a minimum (maximum) in the negative (positive) slope mode. An increasing (decreasing) voltage on VCTRL produces an increasing (decreasing) attenuation respectively. The VCTRL pin has an on-chip pull-up ESD diode so VDD should be applied before VCTRL is applied (see Recommended Operating Conditions for details). If this sequencing is not possible, then resistor R2 in the application circuit should be set to 1kΩ to limit the current into the VCTRL pin. The VMODE pin is used to set the slope of the attenuation. The attenuation is varied by VCTRL as described in the next section. Setting VMODE to a logic LOW (HIGH) will set the attenuation slope to negative (positive). A negative (positive) slope is defined as an increased (decreased) attenuation with increasing VCTRL voltage. The Evaluation Kit provides an on-board jumper to manually set the VMODE. Install a jumper on header J2 from VMODE to the pin marked Lo (Hi) to set the device for a negative (positive) slope (see application circuit). RF1 and RF2 Ports The F2255 is a bi-directional device, allowing RF1 or RF2 to be used as the RF input. RF1 has some enhanced linearity performance, and therefore should be used as the RF input, when possible, for best results. The F2255 has been designed to accept high RF input power levels; therefore, VDD must be applied prior to the application of RF power to ensure reliability. DC blocking capacitors are required on the RF pins and should be set to a value that results in a low reactance over the frequency range of interest. Power Supplies The supply pin should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1V/2uS. In addition, all control pins should remain at V (+/-.3V) while the supply voltage ramps or while it returns to zero. 218 Integrated Device Technology, Inc. 2 Rev 2, February 9, 218

21 1MHz to 3MHz Control Pin Interface If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of control pins 14 and 16 is recommended as shown below. V MODE 5Kohm 2pf 5Kohm 2pf V CTRL VDD Control 2 11 RF1 3 1 RF Integrated Device Technology, Inc. 21 Rev 2, February 9, 218

22 1MHz to 3MHz EVKIT / APPLICATIONS CIRCUIT VCC VDD C1 R1 C2 C3 R2 C4 1 J VCT RL R3 R C5 R5 C J2 1 GND GND 12 RF J3 1 C7 2 3 NC RF1 NC RF C8 1 J4 RF NC NC J5 1 C9 2 VMODE VDD VCTRL NC EPAD RTN RTN GND RTN U1 VDD VDD C1 C Integrated Device Technology, Inc. 22 Rev 2, February 9, 218

23 1MHz to 3MHz EVKIT PICTURE / LAYOUT (TOP VIEW) 218 Integrated Device Technology, Inc. 23 Rev 2, February 9, 218

24 1MHz to 3MHz EVKIT PICTURE / LAYOUT (BOTTOM VIEW) 218 Integrated Device Technology, Inc. 24 Rev 2, February 9, 218

25 1MHz to 3MHz EVKIT BOM TOP MARKINGS 218 Integrated Device Technology, Inc. 25 Rev 2, February 9, 218

26 1MHz to 3MHz Revision History Revision Revision Date Description of Change 2 February 9, 218 Corrected POD drawing, added revision page 1 January 3, 217 Updated GBT limits for IDD, VMODE and VCTRL O November 5, 215 Initial Release Corporate Headquarters 24 Silver Creek Valley Road San Jose, CA Sales or Fax: Tech Support DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as IDT ) reserve the ri ght to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaran teed to perform the same way when installed in customer products. The information contained herein is provided without representati on or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non -infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life suppor t systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit All contents of this document are copyright of Integrated Device Technology, Inc. All rights reserved. 218 Integrated Device Technology, Inc. 26 Rev 2, February 9, 218