Product Selector Guide. small, great solutions
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1 Product Selector Guide
2 Table of Contents About Us & Our Mission...3 Lighting LED Driver IC...4 Lighting LED Modules...5 Dimmer...6 Optical Sensors...7 Magnetic Sensors...8 Power Management...9 Corporate Headquaters...11 Sales Office Europe...12 Sales Office North America...13 Distributors North & South America...14 Distributors Asia...15 Version of 16
3 About Us alpha microelectronics was founded in 1994 and since inception has offered ASIC design, test, and production services. In addition, as of 2008, we began to offer a line of standard products. The foundation of the company stems from an established history in the mixed-signal semiconductor industry. Our designers possess the specific skills, experience, and knowledge that are crucial in High Voltage, Radio Frequency, and Mixed Signal development. We are located in Frankfurt (Oder), Germany, a city with a long standing history in the semiconductor industry with the focus on research, production and trade in the Berlin-Brandenburg area. We are a fabless semiconductor manufacture for custom specific and standard ICs. At alpha microelectronics, we offer turnkey solutions from design to production. Our Mission Our vision is to provide high quality mixed-signal products and services to a wide scope of clients throughout the world. We strive to be innovative, ahead of change, offer both superb quality products and services at competitive prices. An integral part of our company philosophy is to cultivate a partnership with our clients, so that we can identify and meet their requirements, to bring them to the next level of success with their products. We are committed to our clients, offering exemplary service as our top priority. Our pledge to excellence is our pledge to our clients! alpha microelectronics gmbh is proud to be ISO 9001:2008 certified and RoHS compliant. 3 of 16
4 Lighting LED Driver IC Part No. AMG-LL9910 Supply 450VDC AMG-LL992x 420VDC ILED - 20,30,50, 100mA Short Description Universal high voltage single channel LED driver. Both buck and boost topologies are attainable. External MOSFET. Programmable PWM frequency up to 300kHz. Constant current LED drive, dimmable between 0 and 100% by applying an external control voltage or low frequency PWM. Features - >90% efficiency V - Peak current mode converter - Linear and PWM dimming capability - Buck and boost topology - Pin compatible with other HV LED drivers - Available as bundle with MOSFET Very cost effective & economical family of single channel high voltage LED drivers. Compatible to similar products from other suppliers. This IC is very highly recommended for decorative lighting applications. - Constant output current 8-420V Fixed OFF-Time Buck Converter Internal MOSFET Small 3 lead SMD package 4 of 16
5 Lighting LED Modules Part No. AMG-LL75x Supply 7-30VDC AMG-LL76x 7-50VDC AMG-LL79x VAC AMG-LL7Ax 120, 230, 277VAC ILED 200, 350mA 350mA Short Description High efficiency, long lifetime, constant current LED driver modules. Extremely small form factor. High efficiency, long lifetime, constant current LED driver modules. Extremely small form factor. 20,30,50, High efficiency, long lifetime, constant current LED driver modules. 100mA Extremely small form factor. 350, 700mA Family of non isolated High Voltage LED driver modules. No external AC/DC power supply is required. Features - Buck topology - Constant current output 200mA or 350mA - Low current ripple version of OLED (<1% Ipp) - Maximum output power 10W - Capable of driving white LEDs - Upto 96% efficiency - PWM control input for dimming - Standby current max.3.5ma - Connection options: Crimp, plu, solder - Surface mounting possible MTTF > h - Buck topology - Max. Output power 10W - LED Current 350mA - PWM input for dimming and disable - Efficiency upto 94% white LEDs (max.~45v forward voltage) - Standby current 3.5mA - Over current protection - Reverse polarity protection - Crimp, plug, and solder connectors - 42x16.5x7mm - MTTF> h - Buck topology - Efficiency > 92% - Wide supply range - Over current protection - Reverse polarity protection - 21x18x10mm - MTTF> h - Buck topology - Low current ripple <10% - Short circuit/over current protection - Wide outout voltage range - Output power upto 30W - Dimmable (0-10V) - Fast wire to board connections - Small form factor (60x28mm) - Very slim module (<15mm) 5 of 16
6 Dimmer Part No. Li080 Supply 13.5 ILED 1mA Short Description Timer & dimmer IC for timing, PWM, & dimmer applications. It's most suitable for incandescent & halogen lamp dimmers. The LED can display if the IC detected a fault condition. Features - Dimming range between 10% and 95% - Flexible soft start function (hot and cold soft start) - Zero-crossing detection - Protection for over current, over voltage and over temperature - Status indication for protection functions - Ambient temperature range: 0 C to 70 C 6 of 16
7 Optical Sensors Part No. SO101 SO204 Supply 7-35VDC Icc VDC - Short Description Single chip optical sensor. It incorporates an IR emitting diode driver/oscillator, a photo detector receiver with differential signal evaluation for positioning detecting and a decision stage. This product also provides a linear output, data output, & switching outputs with high driving capabiliities. Fully integrated optical receiver for switch or data trasmission applications. It's an integrated light barrier receiver/transmitter front end IC to be used with external receiving and emitting diodes. The IC consists of a current-to-voltage converter, variable-gain amplifier, 10-bit ADC, logic block, two bandgap reference voltage cells, one 1.8, two 2.5V, and one 3.3V regulators.the Tx diode is driven by the digital block of the IC. The Rx diode signal, is converted into a voltage by the current to the voltage converter and then amplified, there are six possible gain settings. ADC is synchronized with the Tx diode. The signal values are processed by the logic block which allows for variable object detection thresholds, adjustable light signal timing and digital signal filtering. Features - Photo receiver with phototransistor and PSD inputs - IR emitting diode driver with upto 400mA peak current - IR emitting diode pulse width and repetition frequency set by ext.c - Linear, comparator & data output - Adjustable receiver gain and hysteresis - Two independent outputs, each capable to sink 150mA - Output overload/overcurrent protection - Thermal shutdown - Operating temperature range -25 to 90 C - Specialized photo diode receiver front-end CMOS technology - On-chip 3.3V linear voltage regulator supporting off-chip electronics - Separate on-chip analog and digital core on-chip 2.5V linear voltage regulators - On-chip 1.8V ADC reference voltage regulator - Internal current-to-voltage converter with modifiable transresistance - Support of an external current-to-voltage converter by disabling the internal one - 6 step variable gain amplifier with matched compensation for increased dynamic range - Adjustable Tx-LED strength and timing - Adjustable digital signal filtering - Integrated 8 digital 7-segment LED driver - UART interface - Low power consumption 7 of 16
8 Magnetic Sensor Part No. SM101 Supply VDC Icc - Short Description Single chip inductive proximity switch Features - Fully integrated low cost proximity detector - User adjustable sensing range - User adjustable hysteresis (0...15%) - Can function with a broad selection of inductive transducers - Voltage regulator to improve immunity against fluctuations of supply voltage - Inactive output during start-up - NPN open collector output with guanranteed sink current of 150mA - Output overload/overcurrent protection - Broad range of operating frequency: 100kHz...1MHz - Broad operating temperature range: -25 C...90 C - Package QFN-24 8 of 16
9 Power Management Part No. APQ03SN80AB Supply 800V Icc 3A APQ02SN60AH 600V 2A APQ08SN50BF 500V 8A APQ5ESN40AH 400V 5.5A APQ57SN10BH 100V 57A APQ50SN06AH 60V 50A APQ16SN06AB 60V 16A Short Description Features V / 3A These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) = 3.6Ω(typ), VGS=10V, ID =1.5A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv / dt capability correction based on half bridge topology V / 2A These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =3.8Ω(typ), VGS=10V, ID =1.2A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv / dt capability correction based on half bridge topology V / 8A These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =0.72Ω(typ), VGS=10V, ID =4.8A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv / dt capability correction based on half bridge topology V / 5.5A These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =0.85Ω(typ), VGS=10V, ID =3.3A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv / dt capability correction based on half bridge topology. These N-Channel enhancement mode power field effect transistors are - 100V / 57A produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =18mΩ(max), VGS+10V, ID +28.5A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Imprvoved dv / dt capability correction based on half bridge topology. These N-Channel enhancement mode power field effect transistors are - 60V / 50A produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =19mΩ(typ), VGS=10V, ID =30A state resistance, provide superior switching performance, withstand high - Fast swtiching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv / dt capability correction based on half bridge topology. These N-Channel enhancement mode power field effect transistors are - 60V / 16A produced using planar stripe DMOS technology. Designed to minimize on- - RDS(on) =52mΩ(typ), VGS=10V, ID =15A state resistance, provide superior switching performance, withstand high - Fast switching energy pulse in the avalanche & commutatation mode. Well suited for - 100% avalanche tested high efficiency switched mode power supplies, active power factor - Improved dv/dt capability correction based on half bridge topology. 9 of 16
10 Power Management Part No. AMG-Q05DM06AV Supply 60V Icc 4.2A Short Description Built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS(on) for the power MOSFETs. The complementary H-Bridge consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input gate capacity is very low, so that high switching frequencies are possible thus making it ideal for use in different applications. With technical performance being above & of high density power integration, this makes the SOT8 pad compatible with the DFN8 package, making this product an ideal choice for wide spread high efficiency apllications for motor driving, lighting, & power management. Features - Complementary N/P-MOS H-Bridge - Wide power supply range 5V-60V - 60V / 5.1A/ RDS(on) = 34mΩ(typ) -60V / -4.2A/ RDS(on) = 54mΩ(typ) - Low QG pf 9.86/12.6nC for PMOS/NMOS Low CISS of 1447pF/1378pF for PMOS/NMOS - Low voltage gate drive VGS = ±20V - RoHS compliant & green product - Temperature Range -55C +150C - DFN8L 5x6x0.75mm 10 of 16
11 Corporate Headquarters alpha microelectronics gmbh Im Technologiepark Frankfurt (Oder) GERMANY Tel. +49 (0) Fax +49 (0) am.info@alpha-microelectronics.de 11 of 16
12 Sales Office - Europe TECAMS - Technology Consulting & Marketing Services Contact: Franz Svacina Josefsweg 243 A-2392 Sulz AUSTRIA Tel Mob f.svacina@tecams.at 12 of 16
13 Sales Office North America alpha microelectronics gmbh Contact: Michael Head Pinckney, MI USA Tel Fax of 16
14 Distributors North & South America North America Symmetry Electronics Corporation Symmetry World Headquarters 5400 West Rosecrans Avenue Hawthorne, CA USA Toll Free (USA) Tel Fax South America Symmetry Electronics Corporation Symmetry Mexico Office, Headquarters Mexico Guadalajara, Mexico Tel Fax Symmetry Electronics Corporation Symmetry Brazil Office Toll Free (Brazil) Tel Fax of 16
15 Distributors - Asia Alpha Pacific Technologies Co.,Ltd. 3F-6, No.18, Lane 609, Sec 5, Chung Sin Road Shan Chung Dist., New Tapei City TAIWAN Tel Fax emma@pactw.com.tw Website: Symmetry Electronics Corporation Symmetry China Office A-902, Skyworth Bldg. Gaoxin Ave.,I.S., Nashan District Shezhen CHINA Tel Fax of 16
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Product Selector Guide. small, great solutions
Product Selector Guide Table of Contents About Us & Our Mission Lighting LED Driver ICs Lighting LED Modules Lighting LED Modules Magnetic Sensors Power Management MOSFETs Power Management Motor Control
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