Symbol Parameters/conditions Min. Typ. Max. Units
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1 it31e 1 GHz Medium-Gain Differential Amplifier Description Features Absolute Maximum Ratings The it31e is a RoHS-6-compliant packaged differential amplifier designed for use in 1.7 Gb/s and 1.5 Gb/s (OC-19) optical transmitters and receivers as a gain stage with limiting functionality. It allows single-ended input signals from 35 mvpp up to 9 mvpp, or differential signals from 5 mvpp to 18 mvpp to be limited at a constant differential output voltage of 3.8 Vpp. The it31e can be used as predriver for OC-19 optical modulator driver amplifiers. Output voltage control and external offset correction are provided. The amplifier also provides excellent linear performance when operating at lower output voltage. Both AC and DC input coupling are allowed. DC-coupled SCFL differential input (input HIGH voltage = V, and input LOW voltage = -9 mv) are allowed. Limiting function with 3.8 Vpp differential output 3 db Bandwidth: 1 GHz Differential gain: 3.5 db Standard bias supply: -5 V or -5.V, +5 V Power consumption: 855 mw <1% total harmonic distortion at Pout = dbm Low group delay Low jitter Output voltage control AC and DC input coupling (SCFL compatible) AC and DC output coupling RoHS-6-compliant 4x4 mm QFN (MO-) package Symbol Parameters/conditions Min. Max. Units Vee Pow er supply voltage -8 V Vcc Pow er supply voltage 8 V Vd Applied voltage at data input (differential) 3 V Vm Applied voltage at data input (single ended) 1.5 V I DCin (+),(-) Offset control current 5 ma Tch Maximum channel temperature 15 C Tstg Storage temperature C Recommended Operating Conditions Symbol Parameters/conditions Min. Typ. Max. Units Tc Operating temperature range (Tcase) 85 o C Vee Negative pow er supply voltage V Vcc Positive pow er supply voltage V Vcb First internal bias control voltage V Iee Negative supply current ma Icc Positive supply current ma V DCin Offset control voltage -5 5 V Vctrl Voltage control pin -.7 V Vm Applied peak-peak voltage at data input (single ended) 35 9 mv Vd Applied peak-peak voltage at data input (differential) 5 18 mv Vindc DC input voltage (w ith DC-coupled input) -.5 V R Data bit rate 1.5 Gb/s For pricing, delivery, and ordering information, please contact GigOptix at (65) , 1
2 it31e 1 GHz Medium-Gain Differential Amplifier Electrical Characteristics At ambient temperature Vee =- 5 V Vcc = +5 V Symbol Parameters/Conditions Min. Typ. Max. Units P Pow er consumption mw Z DCin Input impedance at DCin, /DCin Ohm G Differential small signal gain db B3dB 3 db bandw idth 9 1 GHz RLin Input return loss (up to 1 GHz) 15 db RLout Output return loss (up to 1 GHz) 8 1 db Vout Output peak-peak voltage (differential) (Vctrl =-.7V for max. output voltage) V Vout Vout sensitiviy vs Bias (Vee=-5 V +/-5%, Vcc=5 V +/-5%) +/-11 % Voutdc DC output voltage (DC coupled to 5 ohm load) 1 3 mv Trse Output rise time (single ended at maximum output voltage) 8 35 ps Tfse Output fall time (single ended at maximum output voltage) 8 ps JRMS RMS jitter degradation (*) ps (*) JRMS=sqrt((J RMS_dut ) -(J MRS_thru ) ) S-Parameter Data Measured on connectorized evaluation board Vee = -5 V, Vcc = +5 V Gain (db) it31 Single Ended Linear Gain S11(dB) it31 Input Return Loss S (db) it31 Output Return Loss S1 (db) it31 Isolation For pricing, delivery, and ordering information, please contact GigOptix at (65) ,
3 it31e 1 GHz Medium-Gain Differential Amplifier Eye Diagram Performance Vee = -5 V Vcc = +5 V Linear performance Bit rate: 1.7 Gb/s Vin=+/-5 mvpp, Vout=+/-75 mvpp Linear performance Bit rate: 1.5 Gb/s Vin=+/-5 mvpp, Vout=+/-75 mvpp Voltage Control Saturated performance Bit rate: 1.7 Gb/s Vin=+/-45 mvpp, Vout=+/-1.9 Vpp Saturated performance Bit Rate: 1.5 Gb/s Vin=+/-45 mvpp, Vout=+/-1.9 Vpp Bit rate: 1.7 Gb/s Vctrl=-1.5 V, Vout=1.7 Vpp Bit rate: 1.7 Gb/s Vctrl=-1.1V, Vout=1. Vpp For pricing, delivery, and ordering information, please contact GigOptix at (65) , 3
4 it31e 1 GHz Medium-Gain Differential Amplifier Performance As Function of Input Voltage Vout (+/-Vpp) Vout vs Vin Eye Crossing (%) Eye Crossing vs Vin Jitter Degradation RMS (s) Jitter Degradation RMS vs 1.7 Gb/s 3E-1.7E-1.4E-1.1E-1 1.8E-1 1.5E-1 1.E-1 9E-13 6E-13 3E Jitter Degradation RMS (s) Jitter Degradation RMS vs 1.5 Gb/s 3E-1.7E-1.4E-1.1E-1 1.8E-1 1.5E-1 1.E-1 9E-13 6E-13 3E Time (s) Rise/Fall Time (%-8%) vs 1.5 Gb/s 4E E-11 3.E-11.8E-11.4E-11 E E-11 1.E-11 Vee=-5V, Rise Time 8E-1 Vee=-5V, Fall Time 4E Time (s) Rise/Fall Time (%-8%) vs 1.7Gb/s 4.E E-11 3.E-11.8E-11.4E-11.E E-11 1.E-11 Vee=-5V, Rise Time 8.E-1 Vee=-5V, Fall Time 4.E-1.E For pricing, delivery, and ordering information, please contact GigOptix at (65) , 4
5 it31e 1 GHz Medium-Gain Differential Amplifier Power Performance And Harmonic Distortion Pout (dbm) P1dB Pout vs Frequency P3dB Vee = -5 V, Vcc = +5 V, Iee = 15 ma, Icc = 65 ma dbc Total Harmonics Distortion vs Frequency At Pout = dbm. Vee = -5 V, Vcc = +5 V, Iee = 15 ma, Icc = 65 ma Device Diagram Vctrl Vcb DCin Din 1kΩ 5Ω Q /Din /DCin 1kΩ 5Ω /Q Vee Vcc Recommended Operational Setup Vctrl Bias Conditions Input -5. V DCin Din /Din /DCin 1µF 1 µf it31e Vee 56 pf Vcb Q /Q Vcc 56 pf 1 µf Output +5 V For Vee = -5V Apply +5. V at Vcc Apply -5 V at Vee Vcb = V Vctrl = -.7 V or open for maximum output voltage Vctrl from.7v to 1V for output voltage control For Vee = -5. V bias application Apply +5 V at Vcc Apply -5. V at Vee Vcb = V Vctrl =-1.8 V for maximum output voltage Vctrl from 1.8V to 1V for output voltage control For pricing, delivery, and ordering information, please contact GigOptix at (65) , 5
6 it31e 1 GHz Medium-Gain Differential Amplifier E Package Drawings, Pinouts, Marking Notes: Dimensions in inches [mm] Tolerances are ±.39 in. (.1 mm) Package drawing encompasses JEDEC MO- Version VGGC-. See iterra Application Note 1 for recommended pad layout. RoHS parts are backward compatible if application note pad layout is followed. Lead frame material is copper alloy. Mold compound is UL94V compliant. Lead finish is NiPdAu. Marking Information iterra MMMMEA XXNNNN LLYYWW Where, MMMM = part no. E = Package Type A =Temp. Range XX = Wafer Lot NNNN = Ser. No. LLYYWW =MFG D/C Pinouts P1: GND P9: GND P: Din (RF input) P1: /Q (/RF Out) P3: /Din (/RF input) P11: Q (RF Out) P4: GND P1: GND P5: /DCin P13: Vcb P6: Vee P14: Vctrl (voltage control) P7: N/C P15: Vcc P8: N/C P16: DCin For pricing, delivery, and ordering information, please contact GigOptix at (65) , 6
(+),(-) Offset control current 5 ma Tch Maximum channel temperature 150 C Tstg Storage temperature C
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SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D 12277 Berlin Germany Phone ++49 30 772 051-0 Fax ++49 30 753 10 78 E-Mail: sales@shf.de Web: http://www.shf.de Datasheet SHF D837 A Differential
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TGA Product Description The TriQuint TGA is an optical modulator linear driver amplifier designed for the CFPx 1 Gb/s optical markets. The TGA has 12 db of gain and 1. Vpp output power and High BW of 5
More informationTEL: FAX: Electrical Specifications, (continued) Parameter Conditions Min. Typ. Max Units Output Rise / Fall Time Differential,
TEL:055-83396822 FAX:055-8336182 Typical Applications Features The is ideal for: Serial Data Transmission up to 26 Gbps High Speed Frequency Divider (up to 26 GHz) Broadband Test & Measurement RF ATE Applications
More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
More informationTEL: FAX: Electrical Specifications, (continued) Parameter Conditions Min. Typ. Max Units Output Low Voltage 2 V Output Rise /
TEL:055-83396822 FAX:055-8336182 Typical Applications Features The is ideal for: RF ATE Applications Broadband Test & Measurement Serial Data Transmission up to 13 Gbps Digital Logic Systems up to 13 GHz
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CMD27P4 Features Functional Block Diagram Ultra wideband performance Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm QFN package Description The CMD27P4 is a wideband GaAs MMIC low
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Features: Frequency Range: 12.5 15.5 GHz P1dB: 32 dbm IM3 Level -44dBc @Po=dBm/tone Gain: 23.5 db Vdd =4 to 6 V Ids = 10 to 2500 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector Surface
More informationFeatures. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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Typical Applications Features The is ideal for: RF ATE Applications Broadband Test & Measurement Serial Data Transmission up to 28 Gbps Digital Logic Systems up to 28 GHz Functional Diagram Differential
More informationFeatures. Pout: +9 dbm. Parameter Min. Typ. Max. Units
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More informationSHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax
SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D 12277 Berlin Germany Phone ++49 30 772 051-0 Fax ++49 30 753 10 78 E-Mail: sales@shf.de Web: http://www.shf.de Datasheet SHF S807 B Linear
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v6.312 Typical Applications Features The E is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram Wide Bandwidth: 5-26.5 GHz Excellent
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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v4.112 Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features General Description The is a
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v5.1211 HMC37MS8G / 37MS8GE Typical Applications Prescaler for DC to C Band PLL Applications: UNII, Point-to-Point & VSAT Radios 82.11a & HiperLAN WLAN Fiber Optic Cellular / 3G Infrastructure Functional
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