Innovative product update based on emerging application. June 12 th 2018 IFKOR PMM APM Jun Lee ( 이진휘 )

Transcription

1 Innovative product update based on emerging application June 12 th 2018 IFKOR PMM APM Jun Lee ( 이진휘 )

2 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 2

3 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 3

4 PMM Power at a glance: Representing ~30% of Infineon s revenue Revenue development Split by major segments Split by regions Including INTERNATIONAL RECTIFIER from 13 January 2015 [M EUR] Key customers Distribution partners EMS partners restricted Copyright Infineon Technologies AG All rights reserved. 4

5 PMM Power at a glance: Market leader in power MOSFETs Discrete power MOSFETs total market in 2016: $5.78bn Infineon Technologies 26.4% ON Semi* 13.4% Renesas 9,2% Toshiba 7,5% STM 7,3% Market and technology leader Infineon runs the most profitable power discretes business in the industry Infineon is providing the only 300-millimeter fab for power semiconductors in the world PMM offers the broadest portfolio of low- and medium-voltage-mosfets (OptiMOS ) and highvoltage-mosfets (CoolMOS ) with outstanding efficiency Vishay 5,8% Alpha and Omega 4,7% NXP 3,6% Microsemi 3,0% MagnaChip 2,2% *including Fairchild 25 V OptiMOS V CoolMOS P7 voltage Source from IHS Markit, Technology Group, Annual Power Semiconductor Market Share Report, August Information is not an endorsement of Infineon Technologies AG. Any reliance on these results is at the third party's own risk. Visit for more details restricted Copyright Infineon Technologies AG All rights reserved. low 5 high

6 PMM Power at a glance: Broadest portfolio of MOSFETs Target applications AC-DC conversion DC-DC conversion Lighting Low- and mediumpower SMPS High power SMPS Enterprise power Power management BLDC motors Market requirements Infineon s portfolio comprises products with optimized price/performance ratio as well as leading-edge solutions for highest energy efficiency and/or power density restricted Copyright Infineon Technologies AG All rights reserved. 6

7 PMM Power at a glance: Product-to-system approach Essential parts of any electronic system (e.g. in an SMPS); can be realized with separate components or as an integrated power stage as system-on-chip Controller Driver MOSFET releases low-power signal to switch ON translates it into highcurrent gate input switches ON, current flows Strategic growth area Mainstay of today s business Driving system approach creates opportunities for further growth Expansion of IC product portfolio increases addressable market TAM in 2021: 7.0bn MOSFETs account for ~80% of today s PMM power business TAM in 2021: 6.3bn Source: Infineon estimates restricted Copyright Infineon Technologies AG All rights reserved. Source from IHS Markit, Technology Group, Power Semiconductor Forecast Report, September Information is not an endorsement of Infineon Technologies AG. Any reliance on these results is at the third party's own risk. Visit for more details. And Infineon extrapolation 7

8 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 8

9 What Kind of Innovation for Power Semiconductor? System Level Product Idea based on specific application Topology/Algorithm Application Device Level Packaging Technology Size Reduction Thermal Performance Reducing Parasitic components More Integration with Multi-Chip Saving manufacturing cost Wafer Technology Reducing cell pitch Thin Wafer Higher inch wafer Soderable wafer CoolMOS G7 in DDPak DirectFET eximo Merus Audio amplifier Copyright Infineon Technologies AG All rights reserved. 9

10 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 10

11 CoolMOS TM G7 positioning 600/650V G7 C7/G7 Series High-end efficiency Highest switching frequency 500/600V CP 600V P6 600/650V C7 600V P7 P7 Series Best-in-Class price/performance ratio Excellent efficiency Excellent thermal behavior Ease-of-use technology 600/650V C6/E6 500/600/650V C3 650V CFD2 600V CFD7 CFD7 Series Super fast body diode Highest reliably Perfect match for resonant switching topologies like LLC and ZVS PS FB 600V CFD High-end performance Not for new design Active Time Active and preferred Price/performance ratio Highest reliability May 2018 Copyright Infineon Technologies AG All rights reserved. 11

12 CoolMOS TM G7 Technology Low Power High Power DDPAK TOLL D2PAK ThinPAK 8x8 TO-220 To-247 4pin TO-247 DPAK IPAK SL I2PAK IPAK IPAK SL with Iso. Standoff SOT-223 ThinPAK 5x6 TO-220FP NL TO-220FP WC TO-220FP C7 O O O O O O O G7 G7 P7 O O O O O O O O O O O O O CFD7 O O O O O O CP C6 E6 C3 CFD O O O O O O O O O O O O O O O O May 2018 Copyright Infineon Technologies AG All rights reserved. 12

13 CoolMOS TM G7 with DDPAK package features Top side cooling Drain ~ 20 percent higher power dissipation ~ 12 C lower board temperature Source Kelvin Source Gate *Package: view from bottom side May 2018 Copyright Infineon Technologies AG All rights reserved. 13

14 CoolMOS TM G7 with DDPAK package features 4pin kelvin source capabilty Drain TO-220 PWM In GND V DRV Gate V GS V LS Drain Source Parasitic source inductance counteracts drive voltage Lower efficiency due to slow down of transient V DRV L Source DDPAK 4pin configuration V DRV Source Kelvin Gate PWM In SGND Gate V DRV V GS V LS Drain Source L Source Separate pin source-sense delivers undisturbed signal to driver Higher efficiency at full load Source *Package: view from bottom side May 2018 Copyright Infineon Technologies AG All rights reserved. 14

15 CoolMOS G7 & CoolSiC G6 in DDPAK Value proposition CoolMOS G7 Technology Best-in-class FOM R DS(on) *E oss R DS(on) *Q g Improved efficiency performance and highest power density Suitable for PFC as well as LLC topologies CoolSiC G6 Technology Best-in-class forward voltage (V F ) 1.25 V Best-in-class FOM Q c x V F - 17% less than Gen5 Improved switching performance and high dv/dt ruggedness and Optimized thermal behavior DDPAK Features First time top side cooled SMD solution for high power SMPS applications 4 pin capability Kelvin Source connection MSL1 compliant, totally Pb free TCOB capability of >> cycles DDPAK Benefits Thermal decoupling of PCB and semiconductor enabling higher power density or longer system lifetime Reduced parasitic source inductance by Kelvin source improves efficiency & oscillation tendency Exceeding the highest quality levels 1 st top side cooled SMD system solution for PFC topologies 1 st top side cooled SMD high-end efficiency MOSFET solution for LLC topologies May 2018 Copyright Infineon Technologies AG All rights reserved. 15

16 600 V CoolMOS G7 and 650 V CoolSiC G6 in DDPAK are developed to address high power SMPS applications Telecom Application Solar Server PC Power 150 W 300 W 600 W 1000W 3000W 4000W P out (W) May 2018 Copyright Infineon Technologies AG All rights reserved. 16

17 600 V CoolMOS G7 in DDPAK addresses hard as well as soft switching topologies May 2018 Copyright Infineon Technologies AG All rights reserved. 17

18 DDPAK offers different variants of mounting approaches 1 Heatsink with clip mounting 2 Push pin 3 Heatsink on top of DDPAK package 4 Adhesives May 2018 Copyright Infineon Technologies AG All rights reserved. 18

19 CoolMOS G7 and CoolSiC G6 in DDPAK Performance in Infineon 2.5 kw PFC Board Low Line High Line Board description Specification 90 V AC, 500 W / 1250 W 230 V AC, 500 W /2500 W Choke 600µH Shunt Frequency Used parts 5/10mΩ 65kHz IPDD60R190G7 & IDDD04G65C6 Measurement accuracy 0.1% Board dimension L x W x H 200x140x70 mm May 2018 Copyright Infineon Technologies AG All rights reserved. 19

20 DDPAK CoolMOS & CoolSiC Portfolio Overview 600 V CoolMOS G7 R DS(on) max. [mω] Partname 190 IPDD60R190G7 150 IPDD60R150G7 125 IPDD60R125G7 102 IPDD60R102G7 80 IPDD60R080G7 50 IPDD60R050G7 650 V CoolSiC G6 Amp [A] Partname 4 IDDD04G65C6 6 IDDD06G65C6 8 IDDD08G65C6 10 IDDD10G65C6 12 IDDD12G65C6 16 IDDD16G65C6 20 IDDD20G65C6 Samples are available in ISaR for all parts May 2018 Copyright Infineon Technologies AG All rights reserved. 20

21 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 21

22 What is DirectFET? Top and bottom view Nomenclature explained D DirectFET1.5 TM S G Direct top side cooling MOSFET silicon 1: Capable of consumer qual 1.5: Capable of industrial qual 2: Capable of automotive qual Side view (Mounted on PCB) Fundamental values Top side cooling D Lowest package inductance and resistance System efficiency and power density 0.7 mm height, small footprint Reliability G S No leadframe, wirebond, mold compound 100% Pb free die attach, RoHS6 compliant Environmental friendly Corner gate upgrade Package current rating Copyright Infineon Technologies AG All rights reserved. 22

23 DirectFET : Top(Dual) side cooling DirectFET vs. D2PAK R thja Top side cooling Lowest R and L Smallest footprint 100% P b free Corner gate upgrade R thja (Dual side cooled) = 8.1 C/W R thja (Dual side cooled) = 16.8 C/W 50% Reduction! Mechanical design example DirectFET : Flexible top side cooling greatly simplifies mechanical design and reduce system cost Heatsink THD Package: Complicated and costly assembly to achieve cooling IMS Heatsink TIM: thermal interface material Copyright Infineon Technologies AG All rights reserved. 23

24 DirectFET: Lowest parasitic resistance and inductance Package resistance vs. f s Package inductance vs. f s Top side cooling Lowest R and L Smallest footprint 100% P b free Corner gate upgrade DirectFET = best performance DirectFET = best performance Application example Application: DC-DC buck converter, phase node I d = 30 A f s = 500 khz Same silicon on DirectFET and SO8 DirectFET SO8 Significant reduced ringing for DirectFET Reduced EMI, less snubber circuit needed Potentially use lower breakdown Voltage MOSFET Copyright Infineon Technologies AG All rights reserved. 24

25 DirectFET : Lowest height and smallest footprint Side view Top view Lowest 0.7 mm height For D2PAK, ONLY lead frame height will be higher than DirectFET height!! Top side cooling Lowest R and L Smallest footprint 100% P b free Corner gate upgrade M-can L-can D-PAK D2PAK 5 x 6.3 x 0.7 mm 32.1 mm mm 3 7 x 9.1 x 0.7 mm 63.7 mm mm x 10.4 x 2.4 mm 70.1 mm mm x 15.9 x 4.8 mm 170 mm mm 3 54% area reduction 87% volume reduction 9% area reduction 73% volume reduction 63% area reduction 95% volume reduction 81% area reduction 97% volume reduction Copyright Infineon Technologies AG All rights reserved. 25

26 DirectFET : 100% P b free towards RoHS6 compliance What is RoHS compliance? It is an EU low to limit the concentration of the following substances: Cadmium (C d ) Hexavalent chromium (C r [VI]) Lead (P b ) Mercury (H g ) Polybrominated biphenyls (PBB) Polybrominated diphenyl ethers (PBDE) What is RoHS 5 vs. RoHS 6? Top side cooling Lowest R and L Smallest footprint 100% P b free Corner gate upgrade RoHS 5 RoHS 6 P b free package P b free solder exempt DirectFET is the ONLY high-volume proven, high power package already RoHS6 compliance 100% lead free pre-solder pad uses epoxy (glue) for die attach material: optimized for thermal and electrical conductivity, comparable to solder, yet contain no P b Copyright Infineon Technologies AG All rights reserved. 26

27 DirectFET : Corner gate further increase the current/thermal rating DirectFET M-can corner gate (CG) example MX layout (non CG) ME layout (CG) Gate is moved from center to corner Top side cooling Lowest R and L Smallest footprint 100% P b free 3 additional source pad added Corner gate upgrade Product datasheet comparison IRF7946 (MX) IRF7480 (ME) Corner gate (CG) value proposition Keep all DirectFET benefits Silicon Same R DS(on) 10V 1.4 mω 1.2 mω I D 25 C 198A 217 A R thj-pcb 1C/W 0.75/W Plus Reduce package resistance Increase current rating Improve thermal performance Corner gate design further extended DirectFET benefits to the new level Copyright Infineon Technologies AG All rights reserved. 27

28 DirectFET key targeted applications 200 V 150 V Top side cooling Lowest R and L Smallest footprint SMPS, audio Low C oss Low Q G Low R G Low T RR Corner gate upgrade Breakdown voltage 40 V 75 V 100 V LV drives Low R DS(on) High current Rugged silicon Scalable footprints DC-DC for computing 20 V Low R DS(on) Low Q G Low parasitic, small footprint 10 khz 100 khz Switching frequency 500 khz Copyright Infineon Technologies AG All rights reserved. 28

29 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 29

30 eximo Merus Audio Amplifier: Audio market trends Source: Technavio Global Portable Speaker Market Parent market: Global Smart Home Market Approx. 132 million Portable Speakers shipped globally in 2017 Shipments expected to grow to around 200 million units by 2021 (> 12% CAGR) Infineon decide to acquire Merus Audio for this market as below released letter Copyright Infineon Technologies AG All rights reserved. 30

31 eximo Merus Audio Amplifier: Product portfolio MA12040P Digital 2x40W eximo Amplifier IC MA12040 Analog 2x40W eximo Amplifier IC MA12070P Digital 2x80W eximo Amplifier IC MA12070 Analog 2x80W eximo Amplifier IC I2S digital audio input Digital volume control & limiter 4-18V Supply Voltage Analog audio input Selectable Gain (20dB/26dB) 4-18V Supply Voltage I2S digital audio input Digital volume control & limiter 4-26V Supply Voltage Analog audio input Selectable Gain (20dB/26dB) 4--26V Supply Voltage Common features: Multi-level eximo Switching Technology with 3-level and 5-level modulation for ultra-high power efficiency and filter-less amplification Fourth order closed loop feedback error control for HD audio quality and suppression of supply voltage disturbance Low idle power dissipation ( mW) Low THD+N (0.003% %) Low EMI emission 64-pin thermally enhanced QFN package with pad-down exposed thermal pad (EPAD) for heatsink free operation ALL ICs ARE FULLY QUALIFIED AND IN MASS PRODUCTION Copyright Infineon Technologies AG All rights reserved. 31

32 eximo Merus Audio Amplifier: Multi-Level Technology Conventional Class-D (BTL) Multi-level Class-D (BTL) Left side (+) Right side (-) Differential Pvdd Pvdd 0 Pvdd 0V Pvdd 0V Pvdd -Pvdd 0V 0V 0 Left side (+) Right side (-) Differential Pvdd Pvdd 0 Pvdd 1/2 Pvdd +1/2 Pvdd Pvdd 0V Pvdd ½ Pvdd Pvdd -1/2 Pvdd ½ Pvdd ½ Pvdd 0 ½ Pvdd 0V +1/2 Pvdd 0V Pvdd -Pvdd 0V ½ Pvdd -1/2 Pvdd 0V 0V Copyright Infineon Technologies M E RAG U S AAll U rights D I O reserved. C O N F I D E N T I A L 32

33 eximo Merus Audio Amplifier: Extended Battery Life (Music Play time) Popular battery-powered speakers retrofitted with Merus Audio amplifiers. Comparison of battery life and BoM impact / cost saving. Amazon Tap Creative iroar Monster MonsterBlaster Canton Musicbox S Original 9h 13h 12h 18h Merus Audio 12h (+33%) 20h (+54%) 18.5h (+54%) 27h (+58%) Battery cost saving $1.2 $3.0 $6.6 $ Copyright Infineon Technologies AG All rights reserved. 33

34 eximo Merus Audio Amplifier: Most compact size with LPF filter-free System 1 System 2 System 3 4x Input Capacitors for TAS5711 Amp 4 x Inductors for LC filter 6 x inductors for LC filter 6 x Capacitors for LC filter Compact design with MA12040 no LC components Copyright Infineon Technologies AG All rights reserved. 34

35 eximo Merus Audio Amplifier: Key Value Proposition LOW INTERFERENCE EMC compliance without use of large filter components POWER EFFICIENT Very low power losses Cool operation REDUCED BOM & COST Reduction of battery sizes No output filter components Eliminate complex dynamic rail tracking No heatsinking required COMPACT SOLUTIONS High power in a very small form factor The ultra-compact 2x40W Snowflake reference design featuring Merus Audio s MA12040/40P IC BEST IN CLASS PERFORMANCE High dynamic range Down to 0.003% distortion Low noise FLEXIBLE Support for both analog and digital audio input Highly configurable for tailored performance in individual applications Merus Audio amplifiers utilize proprietary and patented eximo switching amplifier technology to address some of the most important challenges in consumer audio product design Copyright Infineon Technologies AG All rights reserved. 35

36 Table of content 1 PMM Power at a glance 2 Innovation in Power Semiconductor 3 CoolMOS G7 & CoolSiC G6 in DDPak 4 DirectFET 5 eximo Merus Audio Amplifier 6 Summary Copyright Infineon Technologies AG All rights reserved. 36

37 Summary : Tailored growth strategies Power Current position Scale and technology leader in power MOSFETs Broadest portfolio: 25V 900V Addressing all applications #1 holding ~1/3 of the market Growth levers Capitalize on scale and technology leadership in discretes #1 in market* Broadest product and technology portfolio 300 mm thin-wafer manufacturing for power semiconductors System leader with digitalization of control loop & functional integration Leader in next-generation power semiconductor materials GaN and SiC Double TAM by pushing into power management ICs Growth of ~8% p.a restricted Copyright Infineon Technologies AG All rights reserved. *Information based on IHS Markit, Technology Group, Power Semiconductor Discretes & Modules Report 2016, October Information is not an endorsement of Infineon Technologies AG. Any reliance on these results is at the third party's own risk. Visit for more details. 37

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