Low Voltage Power MOSFET
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1 Low Voltage Power MOSFET Technical Marketing Power Transistor Division IMS Sector March-2012
2 Technology Roadmap 10/03/2012
3 MOSFET Technology Roadmap 4 STripFET V H5 STripFET DeepGATE H6 STripFET DeepGATE H7 Q3 Q4 STripFET DeepGATE H8 Q2 Q Eng. samples Maturity Presentation Title 10/03/2012
4 H5 H6 H7 MOSFET Technology Roadmap 5 Parameters STripFET V H5 series STripFET VI DeepGATE H6 series STripFET VII DeepGATE H7 series R DS(on) *A [mw x mm 2 ] 1 D = - 25% D = - 60% R DS (on)*a [mw x mm 2 ] 1 D = - 5% D = - 50% FoM= R DS [mw x nc] 1 D = +25% D = - 50%
5 MOSFET Technology Roadmap 6 STripFET III F3 STripFET V F5 40V STripFET DeepGATE F4 series V STripFET VI DeepGATE F6 series 40 80V STripFET VII DeepGATE F7 series V Q1 Q Eng. samples Maturity
6 Rdson[mΩ] Rdson[mΩ] STripFET VII DeepGATE F6 series 7 Technology Benefict Key features Higher efficiency Robust design Small form factor of final system High avalanche ruggedness Improved RDSon x Area vs. STripFET III Technology available in TO220, H2PAK and PowerFLAT 5x6 STripFET VI DeepGATE vs prev. generations 40V PowerFLAT 5x6 21% 60V H 2 PAK-2 13% Trenh Planar Qrr[nc] Trr[ns] Irm[A] %
7 R DS STripFET VII DeepGATE F7 series 8 100V F7 vs Best competition Technology 10% Key Features Industry s lowest RDS(on) Improved RDSon x Area vs. STripFET III Benefict Higher efficiency Robust design Small form factor of final system Application Power Supply Telecom Motor control Solar Automotive
8 P-Channel, Technology Roadmap 10 Metal Gate Body Epy Source STripFET VI DeepGATE Q2 Q3 STripFET VI DeepGATE Q3 Q1 STripFET VII DeepGATE Q3 Q Eng. samples Maturity
9 < 1 mm > 1 mm SMD package overview 13 Up to 3W Up to 4W Up to 5.5W SO-8 SOT223 TSSOP-8 SOT23-6L SOT23-3L PowerFLAT TM 2x2 PowerFLAT TM 3.3x3.3 PowerFLAT TM 5x6 PowerFLAT TM 5X6 d.i. PowerFLAT 5x6 Dual cool PowerFLAT TM 5X6 a. d.i. PowerFLAT TM 5x6 cd
10 Wires RIBBON MOSFET Technology Roadmap 14 Up to 100A Up to 160A Up to 300A PowerSO-10 TM DPAK H 2 PAK H 2 PAK-6 H 2 PAK-7 DPAK PowerSO-10 TM D 2 PAK
11 Key features Key features Packages suitable to drive very High Currents (>120 Amps) Customer wide options choice H2PAK will improve RDSon Vs standard one Applications Applications Motor Control SMPS: Synchronous Rectification, OR-ing H 2 PAK, high current package 15 Assembly Assembly Ribbon Bonding will give a competitive advantage H2PAK, pin configurations H 2 PAK With Wire H 2 PAK With Ribbon H 2 PAK-7 H 2 PAK-6 H 2 PAK-62 H 2 PAK-2 D G G S G S S S G All Pins uncut STHxxxNyzz-7 Pin 4 cut STHxxxNyzz-6 Pin 2 cut STHxxxNyzz-62 Full compatible with D 2 PAK STHxxxNyzz-2
12 High current evolution 16 Drain Current Continuous 120 A 160 A 180 A 220 A TO220 D 2 PAK H 2 PAK POWERSO-10 Wire Bonding Ribbon Bonding RDson 25 C 2.1 mω 1.6 mω 1.4 mω 1.25 mω RDson C 2.6 mω 2.0 mω 1.7 mω 1.5 mω 100 C 120 A 160 A 180 A 220 A
13 PowerFLAT, leadless package 17 Key features Low thickness/weight Low Rthj-pcb thermal resistance Low parasitic inductance Low parasitic package resistance Multiple sources Small form factor Key features High power capability Less parasitic losses High switching frequency operation High current handling Top side heat dissipation Key features PowerFLAT 5x6 d.s.c PowerFLAT 5x6 PowerFLAT 5x6 d.i. PowerFLAT 3.3x3.3 PowerFLAT 2x2 asymmetric symmetric Common drain
14 4.5mm 2.3mm 1mm PowerFLAT Versus DPAK 18 D 2 PAK DPAK PowerFLAT 5x6 150 mm mm 2 30 mm 2 The smart solution to reduce space Four times thiner than D²PAK Surface on PCB is Twice thinner than DPAK 80% smaller than D²PAK 60% smaller than DPAK
15 Different assembly process capability 19 SO-8/PowerFLAT bonding impact on R DS (on) Features Gold wires 6x2 mils Ribbon 2x30x4 mils Clip R DS [mω] 8.5 R DS [mω] 6.7 This comparison is made on same die size 6.7 (-20%) 4.6 (-30%) ~5.7 (-33%) ~3.7 (-44%) R DS [mω] 8.5 R DS [mω] (-20%) 4.6 (-30%) ~5.7 (-33%) ~3.7 (-44%)
16 Features Exposed metal source on top side Package outline comparable with SO-8 & PowerFLAT5x6 Low profile (0.8mm min) Full encapsulated silicon Thermal performances PowerFLAT P [W] T j-c [ºC] Dual side cool packages 20 Benefict Low operating temperature and longer operating life Exceptional die protection and easy handling & manufacturability Higher current handling capability than standard packages with same size Enabled higher power density Low total system silicon cost Multiple sources Single side cooling 53 1 Dual Side cooling 28-47% Package botton Package top Section Package Botton Package Top Section
17 ST s products solution 10/03/2012
18 STripFET VI DeepGATE F3 series 22 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package STP180N10F Prod Features High avalanche ruggedness Improved RDSon x Area vs. F3 Application Powes supply Telecom Adapter Solar STP130N10F Avail STH180N10F Prod TO220 STF180N10F Pord TO220FP STH180N10F Prod H 2 PAK-2 STL70N10F Q4/11 STL30N10LF Q1/12 Performance PowerFLAT 5x6
19 STripFET VI DeepGATE F4 series 23 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package Features High current capability Application Motor control E-bike Ups Industrial STP90N55F Prod STP80N70F Prod STP78N75F Prod STP165N10F MAT29 STP70N10F Prod STP90N15F MAT10 STH165N10F MAT10 STH90N15F MAT20 STL25N15F Prod TO220 H2PAK-2 PowerFLAT 5x6
20 STripFET VI DeepGATE F6 series 24 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package Features High avalanche ruggedness Improved RDSon x Area vs. F3 Application Powes supply Telecom Adapter Solar STP110N55F Availble S STP260N6F Prod STP77N6F By April S STPxxN7F By May S STP210N75F Prod STH320N4F Q3/12 MP STH260N6F Prod STH210N75F Prod STL180N4LF Q1/12 S STL100N6LF Q1/12 MP STL80N75F Q1/12 MP STL75N8LF Prod TO220 H2PAK-2 PowerFLAT 5x6
21 MOSFET Logic Level 25 Application 4.5 mcu output voltage Electric vehicles Hybrid vehicle Benefict low power fast switching low leakage current Part Number BVDS [V] Product portofolio RDS(on) (max) [mω] @10V STL100N1VH STL120N2VH STL7N6VF STL40N75LF STL30N10LF Package PowerFLAT 5x6 STL16N1VH PowerFLAT 3.3*3.3
22 PowerFLAT 5x6 Product portfolio 26 VI Dee Features STripFET V STripFET DeepGATE STripFET VII DeepGATE PN BV DSS [V] Product portofolio R DS (on) (max) [mohm] 10V 4.5V Qg (typ) [nc] Ciss [pf] Status STL51N3LLH Prod. STL56N3LLH Prod. STL60N3LLH Prod. STLxxN3LLH TBD Q3 12 STL65N3LLH Prod. STL80N3LLH Prod. STL90N3LLH Prod. STL100N3LLH Q3 12 Application Industrial Server Telecom Computer STL150N3LLH Prod. STLxxN3LLH Q3 12 STL150N3LLH Prod.
23 PowerFLAT 5x6 Product portfolio 27 Product portofolio PN BV DSS [V] R DS (on) (max) [mohm] Qg (typ) [nc] Ciss [pf] Status VI Dee Features STripFET V STripFET DeepGATE STripFET VII DeepGATE Application Industrial Server Telecom Computer 10V 4.5V 2.5V STL100N1VH x6 Prod STL16N1VH Prod 3.3x3.3 STL15N4LLF MC30 STL7N6F MC30 STL70N4LLF Prod. STL140N4LLF Prod. STL180N4LF Q1 Sampes STL35N6F Prod. STL100N6LF x6 Q1 Prod STL85N6F Prod. STL80N75F Q1 Prod STL75N8LF Prod STL70N10F Q1 Prod
24 Key features 75V LV MOSFET for LED driving 35 Key Application Features Main switch for Boost converter with 10~20W LED Customers Philips, GE & FSP-Powerland LED lighting with DC input, output driving 6~10 LED in series Low power, 10~20W Boost topology 600kHz switching frequency Counter lighting in department store etc. Key parameters Low Voltage MOSFET BVdss 75V Rdson Qg =19nC Package: PowerFLAT 5x6
25 38 Low Voltage Technical Marketing Power Transistor Division, IMS Group
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