ST High Voltage Power MOSFET

Size: px
Start display at page:

Download "ST High Voltage Power MOSFET"

Transcription

1 ST High Voltage Power MOSFET Maurizio Giudice, Marketing Director Power Transistor Division IMS Group March-2012

2 Market Trend: High efficiency and Emerging Applications 2 Energy efficiency and costs Growing energy demand Environmental technology and sustainability

3 HV Power MOSFET RoadMaps

4 HV Power MOSFETs: voltage range by technology V 1200V 1050V 1000V 850V 800V 650V 600V 520V 500V 420V 400V PowerMESH N series SuperMESH NK series NM..FD NM FDmesh MDmesh FDmesh II NM..ND NM N MDmesh II SuperMESH 5 N K5 MDmesh V ST HV Power MOSFETs From 200V up to 1500V Product range SuperMESH3 & SuperMESH V Series and SuperMESH BVDSS extension Super-Junction HV MOSFET roadmap Super-Junction MDmesh technologies 300V Package roadmap 200V Normalised RDS(on) x Area March-2012

5 MDmesh TM V Breakthrough in Power MOSFETs Lowest R DS (on) x Area for Energy Saving and Higher Power Density MDmesh V

6 MDmesh V: Breakthrough in Power MOSFETs 8 Features Best RDS(on) x area Optimized RDS(on)*Qg Higher V DSS rating Benefits Lowest conduction losses. Increased power density Excellent switching performances Higher efficiency Lower EMI Increased safety margin Photovoltaic, SMPS for Servers, Metering, AC/DC Converters, Adapters, Welding, High-end Lighting, etc

7 New SuperJunction MOSFET series 12 MDmesh II DIFFERENCES: MORE EFFECTIVE DIFFUSION PROCESS NEW BODY COLUMN STRUCTURE LESS NUMBER OF MULTIDRAIN STEPS MDmesh V - Pitch - Concentration drain n, Ron * Area

8 MDmesh TM V: Features and Benefits 13 Key features 650 V lowest R DS (on) * Area Higher breakdown voltage MDmesh V targeted for best efficiency in the application Main benefits Higher energy saving Increased power density Increased safety margin STW88N65M5 Max Value T=25 C Main Parameters ST Best Competitor Unit BV DSS Drain to Source breakdown voltage V R DS(on) V DS = 10V, I D = 42A/33A m MDmesh V Q G V DS = 520V/480V, V GS = 0 10V, I D =42A/50A nc March-2012

9 MDmesh V RDS(on) Benchmark STY139N65M5 17mΩ 650V comp. 37mΩ STW88N65M5 29mΩ 650V comp. 74mΩ STx57N65M5 63mΩ 650V comp. 250mΩ STx18N65M5 220mΩ 50 0 MAX247 TO-247 TO-220/D2PAK DPAK MDmeshV 25C`) Competition 25C`) March-2012

10 Evaluation Board: 2kW PFC (Fixed OFF Time) : STEVAL-ISF001V1 Description: 2kW FOT (Fixed OFF time) PFC dedicated to high power applications with a single STW88N65M5 Main Features: Boost converter working in Fixed Toff modality Vac input voltage 400V output regulated +/- 5% High Power factor above 0.98 Low THD distortion <10% full power 70kHz maximum switching frequency 17

11 STW88N65M5 on 2kW PFC vs Competition 20 March-2012

12 MDmesh V series : The Leading MOSFET 21 Technology Superior switching performances coupled with the lowest onresistance make STW88N65M5 the best in class amongst 650V Power MOSFETs in TO-247 STW88N65M5 vs direct competitor Comparison test result Superior switching performances Better on-resistance Benefits Higher efficiency in the application Lower working temperature MDmesh V Switching Benchmark March-2012

13 V DS MDmesh TM V: 550V 650V Product range R DS (on) (max) P/N [V] [Ω] [A] Id Package Application STx36N55M5 29 TO-220 TO-220FP/D 2 PAK SMPS Server STx32N55M5 25 TO-220 TO-220FP D 2 PAK/I 2 PAK/TO-247 SMPS Server STx18N55M5 14 TO-220/TO-220FP/D 2 PAK/DPAK HID,SMPS STY139N65M5 130 Max247 PV-Inverter, Server, UPS STx88N65M5 84 TO-247 PV-Inverter, Server, UPS STW69N65M5 60 TO-247/TO-3P PV-Inverter, Server, UPS STx60N65M5 45 TO-247/TO-3PF PV-Inverter, Server SMPS,Telecom STx57N65M5 42 TO-220/TO-220FP/D 2 PAK/I 2 PAK/TO-247 PV-Inverter, Server SMPS, Telecom STx45N65M5 31 TO-220/TO-220FP/D 2 PAK/TO-247 Server SMPS, Telecom STx34N65M5 29 TO-220/TO-220FP/D 2 PAK/TO-247 Server SMPS, Telecom STx31N65M5 22 TO-220/TO-220FP/D 2 PAK/I 2 PAKFP/TO-247 SMPS Server STx20N65M5* 18 TO-220/TO-220FP/I 2 PAKFP/TO-247 SMPS Server STx18N65M5 15 TO-220/TO-220FP/D 2 PAK/DPAK u-inverter, SMPS, HID STx15N65M5 11 TO-220/TO-220FP/I 2 PAKFP/DPAK u-inverter, HID, SMPS, STx11N65M5 9 TO-220/TO-220FP/I 2 PAK/DPAK/IPAK u-inverter, HID, SMPS STL3N65M5* 2.5 PowerFLAT TM 3.3 x 3.3 HV Battery chargers, Adapters * Coming soon samples (Q3 12) March-2012

14 MDmesh TM II Power MOSFETs Low Conduction and Switching Losses for Energy Saving MDmesh II

15 MDmesh TM II Technology MDmesh TM II Features Extremely low R DS (on) up to 40% R DS (on) reduction Low input capacitance and Q g V th range: 2V<V th <4V Best-in-class in dynamic dv/dt Fast Recovery Diode version (FDmesh TM II) Benefits Extremely low conduction losses Extremely low switching losses: improved system efficiency and smaller heat-sinks Driver losses reduction and driving optimization: higher currents at lower V GS and high noise immunity High avalanche ruggedness

16 MDmesh II 500V Product range 26 V DS [V] 500 R DS (on) (max) Sales Type Package Status [Ω] STx8NM50N DPAK/TO-220/TO-220FP Full Production STx10NM50N DPAK/TO-220/TO-220FP Full Production STx11NM50N DPAK/TO-220/TO-220FP Full Production STx14NM50N D 2 PAK,DPAK/TO-220/TO-220FP Full Production STx19NM50N D 2 PAK-TO-247-TO-220/FP Full Production STx23NM50N D 2 PAK-TO-247-TO-220/FP Full Production STx28NM50N D 2 PAK-TO-247-TO-220/FP Full Production STW60NM50N TO-247 (Samples available) Production Q STY105NM50N Max247 (Samples available) Production Q March-2012

17 MDmesh TM II 600V Product range 27 V DS [V] 600 R DS (on) (max) Sales Type Package Status [Ω] STx7NM60N DPAK/TO-220/TO-220FP Full Production STx9NM60N DPAK/TO-220/TO-220FP Full Production STx10NM60N DPAK/TO-220/TO-220FP Full Production STx10NM60ND DPAK/TO-220/TO-220FP Full Production STx13NM60N DPAK/TO-220/TO-220FP Full Production STx18NM60N D 2 PAK-TO-247-TO-220/FP Full Production STx22NM60N D 2 PAK-TO-247-TO-220/FP Full Production STx24NM60N D 2 PAK-TO-247-TO-220/FP Full Production STx26NM60N D 2 PAK-TO-247-TO-220/FP Full Production STX34NM60N D 2 PAK-TO-247-TO-220FP Full Production STx34NM60ND TO-247-TO-220 Full Production STW48NM60N TO-247 Full Production STW56NM60N TO-247 Full Production STW62NM60N TO-247 Production Q STY100NM60N Max247 Production Q March-2012

18 MDmesh TM II 650V Product range 28 V DS R DS (on) (max) Sales Type Package Status [V] [Ω] STx11NM65N TO220/FP/DPAK Production STx15NM65N TO-220, TO-220FP Production STx20NM65N TO-220, TO-220FP Production March-2012

19 V DS [V] SuperMESH3 Products R DS (on) (max) Sales Type Package [Ω] STx3N45K3 SOT-223, SO-8, IPAK STx4N52K3 TO-220/FP/TO-247/DPAK 1.5 STx5N52K3 TO-220/FP/DPAK/D 2 PAK/IPAK 1.2 STx6N52K3 TO-220/FP/DPAK/D 2 PAK 0.98 STx7N52K3 TO-220/FP/DPAK/D 2 PAK 1.15 STx7N52DK3* TO-220/FP/DPAK 3 STx2N62K3 TO-220/FP/DPAK/IPAK 2.5 STx3N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK/I 2 PAK 2.0 STx4N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK/I 2 PAK/PowerFLAT 5x6 1.6 STx5N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK 1.28 STx6N62K3 TO-220/FP/DPAK/D2PAK/IPAK/I2PAK/Samples in PowerFLAT 5x6 HV* 0.75 STx10N62K3 TO-220/FP/I 2 PAK 0.38 STx17N62K3 TO-220/FP/TO STx10N65K3 TO-220/FP 29 *FAST Diode Version SuperFREDmesh3 *by Q March-2012

20 FDmesh TM II & FDmesh TM V Fast Power MOSFETs Low R DS (on) x Area for Energy Saving and Fast Diode Recovery Phase FDmesh V

21 31 FDmesh II: Fast Recovery Diode MOSFET Key features Especially suitable for Bridge topologies Improved intrinsic diode reverse recovery time Higher dv/dt capabilty STW54NM65ND 650V/65mΩ in TO-247 STW55NM60ND 600V/60mΩ in TO-247 Main benefits Increased power density Improved system reliability Higher efficiency in bridge topologies STW55NM60N STW55NM60ND

22 V DS [V] R DS(on) (max) [Ω] Qrr (typ) [uc] P/N Status Package <1 STx12NM50ND Production DPAK, D2PAK <1 STx8NM60ND Production DPAK TO-220 /FP < 1 STx11NM60ND Production DPAK TO-220 /FP < 1 STx15NM60ND Production D2PAK TO-220 TO < 1 STx21NM60ND Production D2PAK TO-220 TO < 2 STx23NM60ND Production D2PAK TO-220 TO < 2 STx25NM60ND Production D2PAK TO-220 TO < 2 STx30NM60ND Production D2PAK TO-220/FP TO < 2 STx34NM60ND Production TO-220, TO < 2 STx43NM60ND Production FDmesh II 500/600V/650V D2PAK TO-220/FP TO <2 STW55NM60ND Production TO <2 STW48NM60ND Production by Q TO <2 STW56NM60ND Production by Q TO <2 STW53NM65ND Samples by Q TO <2 STW54NM65ND Samples by Q TO <2 STW62NM65ND Samples by Q TO-247 March

23 FDmesh V - First Fast MOSFETs@650V- Roadmap 36 V DS [V] R DS(on) (max) [Ω] P/N Application Package Status STW88N65DM5 SMPS/Solar TO STP/W/B57N65DM5 SMPS/Solar D2PAK/TO-220/TO-247 Samples Q3/2012 Samples Q3/ STD18N65DM5 SMPS/ Lighting DPAK/TO-220FP/TO-220 Samples Q3/2012 March-2012

24 SuperMESH TM 5 Breakthrough in Very High Voltage Power MOSFETs Lowest R DS (on) x Area and Qg for Energy Saving

25 SuperMESH 5 very HV series 41 V DS [V] R DS(on) (max) [Ω] P/N Package Status STx7N80K5 TO-220/FP/DPAK / PowerFLAT 5x6 HV Samples Q STx8N80K5 TO-220/FP/I2PAKFP/DPAK/PowerFLAT 5x6 HV Samples Q STx12N80K5 TO-220/FP/D2PAK /TO-247 Samples Q STx25N80K5 TO-220/TO-220FP/TO-247 Samples Q STx23N85K5 PowerFLAT 8x8 HV /TO-247 Samples available Prod STx21N90K5 TO-220/TO-220FP/TO-247/D2PAK production STx6N95K5 IPAK/DPAK/TO-220/TO-220FP/TO-247 production STx20N95K5 TO-220/TO-220FP/TO-247/D2PAK production STx12N120K5 TO-220/TO-3PF/TO-247 Samples Q3 12 Key features Lowest R DS(on) in TO-220 Lowest FOM R DS(on) *Qg New SMD package options PowerFLAT 8x8 HV PowerFLAT 5x6 HV (H2 2012) Benefits Higher input voltage Best efficiency Lowest power losses Lowest heatsink temperature Highest energy saving Increased safety margin March-2012

26 VHV Power MOSFETs for 3-ph aux. SMPS

27 VHV MOSFETs for 3-ph aux. SMPS 61 Main Benefits Specifically targeted for 3-Ф aux. SMPS PV inverter Welding Industrial Drvies High reliability makes each solution stronger Wide choice of packages, including new fully isolated TO-3PF, for easier solution V DS [V] P/N R DS(on) (max) [Ω] Packages TO-3PF Higher creepage for electrical insulation STW9N TO STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK 1700 STx3N170* 13 TO-247/ TO-3PF/TO-220 * By Q

28 1500V MOSFETs for 3-Φ aux. power supply 62 ST provides the best MOSFET solution to fit each specific application need 3-Φ Auxiliary SMPS reference design 10W output power STEVAL-ISA034V1 40W output power STEVAL-ISA031V1 100W output power STEVAL-ISA054V1

29 NEW MOSFET PACKAGE ROADMAP ST is introducing NEW Surface Mounting and Through Hole Packages useful to house high voltage Power MOSFETs providing efficient and very compact solution for the most innovative applications in the semiconductor arena

30 NEW MOSFET PACKAGE ROADMAP 64 PowerFLAT TM 8x8 HV THE SMART PACKAGE SOLUTIONS TO SPACE SAVING PowerFLAT TM 5x6 HV ST provides a NEW FANTASTIC TRIO of Surface Mounting Packages belonging to the new High Voltage PowerFLAT Family 650V MDmesh V series is now enlarged with: PowerFLAT TM 3.3x3.3 HV o Available by March 2012 o STL36N55M5 90mΩ in PowerFLAT 8x8 HV o Available by Q o STL18N65M5 240mΩ in PowerFLAT 5x6 HV o STL3N65M5 1.2 Ω in PowerFLAT 3.3x3.3 HV

31 PowerFLAT 8x8 HV INNOVATION IN PACKAGES 66 ST provides NEW best in class HV Power MOSFETs in MDmesh II, MDmesh V, SuperMESH 5 technologies in PowerFLAT 8x8 HV for very thin and high efficiency applications ( PFC, DC-DC converters, etc.) 650V/550V MDmesh V series : STL57N65M5 (***) 650V, 69 mohm in PowerFLAT 8x8 HV STL31N65M5 (**) 650V, 162 mohm, in PowerFLAT 8x8 HV STL22N65M5 (***) 650V, 200mOhm in PowerFLAT 8x8 HV STL19N65M5 (**) 650V, 240 mohm in PowerFLAT 8x8 HV STL17N65M5 (**)650V, 374 mohm in PowerFLAT 8x8 HV STL18N55M5 (*)550V, 216mOhm in PowerFLAT 8x8 HV STL36N55M5 (*)550V, 90mOhm in PowerFLAT 8x8 HV 600V MDmesh II series : STL26NM60N 600V, 185 mohm in PowerFLAT 8x8 HV STL24NM60N 600V, 215 mohm in PowerFLAT 8x8 HV STL18NM60N 600V, 309 mohm in PowerFLAT 8x8 HV STL13NM60N 600V, 385 mohm in PowerFLAT 8x8 HV 600V FDmesh II series : STL23NM60ND 600V, 199mOhm in PowerFLAT 8x8 HV 850V SuperMESH 5 series : STL23N85K5 (**) 850V, 275 mohm in PowerFLAT 8x8 HV ( (*) available by March 2012, (**) available by Q2 2012, (***) available by Q3 2012)

32 4.4 mm 1 mm 67 D²PAK PowerFLAT 8x8 Versus D2PAK The smart solution to reduce space Higher Power Density Low thickness/weight package PowerFLAT 8x % Area 150 mm 2 64 mm 2 64 mm mm 2-77% Thickness

33 PowerFLAT 5x6 HV INNOVATION IN PACKAGES 69 First Version ST is going to provide NEW best in class HV Power MOSFETs in PowerFLAT 5x6 HV for high efficiency Applications ( PFC, DC-DC converters, adapters, etc.) 1.9 mm creepage 650V MDmesh V series STL20N65M5 (**) 650V, 200 mohm in PowerFLAT 5x6 HV STL18N65M5 (*) 650V 240 mohm in PowerFLAT 5x6 HV STL15N65M5(*) 650V 374 mohm in PowerFLAT 5x6 HV STL12N65M5(*) 650V 530 mohm in PowerFLAT 5x6 HV Second Version 800V SuperMESH 5 series STL8N80K5 (**) 800V 990 mohm in PowerFLAT 5x6 HV STL7N80K5 (*) 800V 1.2 Ohm in PowerFLAT 5x6 HV ( (*) available by Q3 2012, (**) available by Q4 2012) 2.7 mm creepage

34 PowerFLAT 3.3 x 3.3 HV INNOVATION IN PACKAGES ST provides NEW best in class HV Power MOSFETs for high efficiency applications ( Adapters, Battery Chargers, etc..) V MDmesh II series: STL3NM60N (*) 600V, 1.8 Ohm in PowerFLAT 3.3 x 3.3 HV 650V MDmesh V series: STL3N65M5 (**) 650V, 1.2 Ohm in PowerFLAT 3.3 x 3.3 HV ( (*) available by March 2012, (**) available by Q3 2012)

35 I 2 PakFP INNOVATION IN THROUGH HOLE PACKAGES 73 Features Right elevation for 25.4 mm semi-slim adaptor socket Unequalled low RDS(on) x area Benefits ST provides NEW best in class HV Power MOSFETs for very slim and efficient applications (Semi-Slim Adapters, Thin Battery Chargers, etc.) in the new I2PakFP Through Hole Package Compactness Higher power density Mounting package above the standoff avoiding causing stress

36 I 2 PakFP INNOVATION IN THROUGH HOLE PACKAGES Part No. V DS [V] R DS(on) [Ω] Qg (typ) [nc] Technology Sample Production 74 STFI10NK60Z SuperMESH Available Now STFI13NK60Z SuperMESH Available Now STFI13NM60N MDmesh II Available Now STFI24NM60N MDmesh II Available Now STFI26NM60N MDmesh II Available Now STFI34NM60N MDmesh II Available Now STFI20NK50Z SuperMESH Available Now ST provides NEW best in class HV Power MOSFETs in SuperMESH, MDmesh II and in MDmesh V technologies suitable for very slim and efficient adapters 650V MDmesh V series: STFI34N65M5 (**) 650V, 110mOhm in I2PAKFP STFI31N65M5 ( *) 650V, 148mOhm in I2PAKFP STFI20N65M5(***) 650V, 190mOhm in I2PAKFP ( (*) available by March 2012, (**) available by Q2 2012, (***) available by Q3 2012) March-2012

37 THANKS!!!

High Voltage Power MOSFET & IGBTs. Ester Spitale

High Voltage Power MOSFET & IGBTs. Ester Spitale High Voltage Power MOSFET & IGBTs Ester Spitale ST HV Power MOSFETs: WW most complete offer 1500V 1000V 800V 600V 500V SuperMESH NK SuperMESH 3 K3 MDmesh II SuperMESH 5 K5 MDmesh V 200V Planar Super-junction

More information

Low Voltage Power MOSFET

Low Voltage Power MOSFET Low Voltage Power MOSFET Technical Marketing Power Transistor Division IMS Sector March-2012 Technology Roadmap 10/03/2012 MOSFET Technology Roadmap 4 STripFET V H5 STripFET DeepGATE H6 STripFET DeepGATE

More information

Power Semiconductors technologies trends for E-Mobility

Power Semiconductors technologies trends for E-Mobility 1 Power Semiconductors technologies trends for E-Mobility Gianni Vitale Power Conversion & Drives Section Manager System Lab, STMicroelectronics NESEM 2013, Toulouse All trademarks and logos are property

More information

ThinPAK 8x8. New High Voltage SMD-Package. April 2010 Version 1.0

ThinPAK 8x8. New High Voltage SMD-Package. April 2010 Version 1.0 ThinPAK 8x8 New High Voltage SMD-Package Version 1.0 Content Introduction Package Specification Thermal Concept Application Test Conditions Impact on Efficiency and EMI Switching behaviour Portfolio and

More information

Power semiconductors technology outlook

Power semiconductors technology outlook Power semiconductors technology outlook Francesco Di Domenico Principal Application Engineering Infineon Technologies Austria AG November 2016 Content 1 HP SMPS Application Roadmap update 2 HV power semiconductors

More information

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA) 6 V/65 V fast body diode series (//) www.infineon.com/coolmos technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved energy

More information

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220 General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

Power Supply topologies for Metering Applications. EMEA Marketing & Application team

Power Supply topologies for Metering Applications. EMEA Marketing & Application team Power Supply topologies for Metering Applications EMEA Marketing & Application team Agenda Power supply requirements AC/DC topologies for single- and three-phase meters ST component selection and usage

More information

600V/650V CoolMOS Fast Body Diode Series (CFD/CFD2/CFDA)

600V/650V CoolMOS Fast Body Diode Series (CFD/CFD2/CFDA) 6V/65V Fast Body Diode Series (CFD//CFDA) technology is Infineon s second generation fast switching superjunction MOSFETs with integrated Fast Body Diode offering improved Energy Efficiency. It is the

More information

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

HCS90R1K5R 900V N-Channel Super Junction MOSFET

HCS90R1K5R 900V N-Channel Super Junction MOSFET HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

HCS80R850R 800V N-Channel Super Junction MOSFET

HCS80R850R 800V N-Channel Super Junction MOSFET HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA) 600 V/650 V fast body diode series (CFD2//) www.infineon.com/coolmos technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Power Matters Microsemi SiC Products

Power Matters Microsemi SiC Products Microsemi SiC Products James Kerr Director of Marketing Power Discrete Products Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs 1200V MOSFETs FREDFETs (MOSFET with fast body

More information

ST Power Factor Controllers. Luca Salati

ST Power Factor Controllers. Luca Salati ST Power Factor Controllers Luca Salati PFC controller: what a PFC is? 2 Power factor (PF) it's a measure of the efficiency of a power distribution system A system with low PF for a given amount of power

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

STF14N80K5, STFI14N80K5

STF14N80K5, STFI14N80K5 STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code V DS R DS(on) max. I D STF14N80K5 STFI14N80K5

More information

Features. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube

Features. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic

More information

SiC Cascodes and its advantages in power electronic applications

SiC Cascodes and its advantages in power electronic applications SiC Cascodes and its advantages in power electronic applications WBG Power Conference, Munich, 5 th December 2017 Christopher Rocneanu Director Sales Europe and North America cro@unitedsic.com +4915121063411

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Design considerations for chargecompensated. medium-voltage range. Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG

Design considerations for chargecompensated. medium-voltage range. Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG Design considerations for chargecompensated power MOSFET in the medium-voltage range Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG Outline 1 Introduction 2 Application requirements

More information

Pitch Pack Microsemi full SiC Power Modules

Pitch Pack Microsemi full SiC Power Modules Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy

More information

Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCS70R350E 700V N-Channel Super Junction MOSFET

HCS70R350E 700V N-Channel Super Junction MOSFET HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V DS @ T Jmax R DS(on) max I D STW38N65M5-4 710 V 0.095 Ω 30 A Extremely

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching

More information

115 W 115 W 35 W 115 W 35 W 156 W TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE

115 W 115 W 35 W 115 W 35 W 156 W TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65Ω-10ATO-220/FP/D 2 PAK/I 2 PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STB10NK60Z STB10NK60Z-1

More information

TO-220 G D S. T C = 25 C unless otherwise noted

TO-220 G D S. T C = 25 C unless otherwise noted 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

PFU70R360G / PFD70R360G

PFU70R360G / PFD70R360G FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power

More information

Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply

Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications

More information

MMD65R900Q 650V 0.90Ω N-channel MOSFET

MMD65R900Q 650V 0.90Ω N-channel MOSFET MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

Enhancement Mode N-Channel Power MOSFET

Enhancement Mode N-Channel Power MOSFET OSG55R160xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting

More information

Enhancement Mode N-Channel Power MOSFET

Enhancement Mode N-Channel Power MOSFET OSG60R8xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting

More information

HCS70R1K6 700V N-Channel Super Junction MOSFET

HCS70R1K6 700V N-Channel Super Junction MOSFET HCS70RK6 700 NChannel Super Junction MOSFET Features ery Low FOM (R DS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 00% valanche Tested Builtin ESD Diode pplication Switch

More information

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8 from case for 5 seconds General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially

More information

Parameter Symbol Limit Unit

Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Ultra-Low Loss 600V 1200V GaN Power Transistors for

Ultra-Low Loss 600V 1200V GaN Power Transistors for Ultra-Low Loss 600V 1200V GaN Power Transistors for High Efficiency Applications David C. Sheridan, D.Y. Lee, Andrew Ritenour, Volodymyr Bondarenko, Jian Yang, and Charles Coleman, RFMD Inc., USA, david.sheridan@rfmd.com

More information

N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description.

N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description. STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)

More information

PFP15T140 / PFB15T140

PFP15T140 / PFB15T140 FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel

More information

Taiwan Goodark Technology Co.,Ltd TGD01P30

Taiwan Goodark Technology Co.,Ltd TGD01P30 TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Enhancement Mode N-Channel Power MOSFET

Enhancement Mode N-Channel Power MOSFET OSG65R099xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive

More information

MMD50R380P 500V 0.38Ω N-channel MOSFET

MMD50R380P 500V 0.38Ω N-channel MOSFET MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STB5NK50Z

More information

PWRLITE LU1014D High Performance N-Channel POWERJFET TM with PN Diode

PWRLITE LU1014D High Performance N-Channel POWERJFET TM with PN Diode PWRLITE LU114D High Performance N-Channel POWERJFET TM with PN Diode Features Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth. Device fully ON with Vgs =.7V

More information

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60

More information

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 ) SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET

More information

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching

More information

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel

More information

N-Channel Power MOSFET

N-Channel Power MOSFET _Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server

More information

FNK N-Channel Enhancement Mode Power MOSFET

FNK N-Channel Enhancement Mode Power MOSFET FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of

More information

Features. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube

Features. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure

More information

Power MOSFET Stage for Boost Converters

Power MOSFET Stage for Boost Converters UM 33-6PH Power MOSFET Stage for Boost Converters Module for Power Factor Correction Single Phase Boost Diode MOSFET Rectifier RRM = 16 RRM = 6 S = 6 = 16 I F25 = 6 25 = I FSM = 3 F (3) = 2.24 R DS(on)

More information

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1

More information

CoolMOS TM 900V. New 900V class for superjunction devices A new horizon for SMPS and renewable energy applications. Power Management & Supply

CoolMOS TM 900V. New 900V class for superjunction devices A new horizon for SMPS and renewable energy applications. Power Management & Supply Application Note, V1.3, May 2008 CoolMOS TM 900V A new horizon for SMPS and renewable energy applications Power Management & Supply Edition 2008-05-13 Published by Infineon Technologies AG 81726 Munich,

More information

N-channel 650 V, Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package. Features. Higher V DS rating. Description.

N-channel 650 V, Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package. Features. Higher V DS rating. Description. N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D STW69N65M5-4 710 V 0.045 Ω 58 A Higher V DS

More information

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc.. Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current

More information

Latest fast diode technology tailored to soft switching applications

Latest fast diode technology tailored to soft switching applications AN_201708_PL52_024 600 V CoolMOS CFD7 About this document Scope and purpose The new 600 V CoolMOS TM CFD7 is Infineon s latest high voltage (HV) SJ MOSFET technology with integrated fast body diode. It

More information

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600

More information

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Order code V DS R DS(on) max. I D

Order code V DS R DS(on) max. I D Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses

More information

N-Channel Power MOSFET

N-Channel Power MOSFET OSG60R150xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching

More information

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1. STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D TAB 1 3 2 D

More information

N-Channel Power MOSFET

N-Channel Power MOSFET OSG65R200xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R380S Rev. 1.2 Oct. 2017 September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S

More information

STF12N120K5, STFW12N120K5

STF12N120K5, STFW12N120K5 STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP

More information

Designing High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger

Designing High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger Designing High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger Topics Why GaN? Integration for Higher System Performance Application Examples Taking GaN beyond

More information

115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE

115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP9NK70Z STP9NK70ZFP

More information

Prerelease Product(s) - Prerelease Product(s)

Prerelease Product(s) - Prerelease Product(s) N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - preliminary data RDS(on) max. ID PTOT

More information

V T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green.

V T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green. AOTF9A6L 6V, 2A αmos5 TM Power Transistor General Description Proprietary αmos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and

More information

Features. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel

Features. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

Power of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies

Power of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Power of GaN Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Steve Tom Product Line Manager, GaN Products stom@ti.com Solving power and energy-management

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Features STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D 2 PAK, I 2 PAK, TO-247 Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND The

More information

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm

More information

SLD8N6 65S / SLU8N65 5S

SLD8N6 65S / SLU8N65 5S SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

STF24N60M2, STFI24N60M2, STFW24N60M2

STF24N60M2, STFI24N60M2, STFW24N60M2 STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAKFP and TO-3PF packages Features Datasheet production data Order codes V

More information

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh II Power MOSFET I 2 PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V DSS (@T jmax )R DS(on) max I D STD11NM60ND

More information

Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C.

Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C. C3M659J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 9 V 35 A 65 mω Features New C3M SiC MOSFET technology New low impedance package with driver

More information

Symbol SRC60R030. T: TO-247 TR: Tape & Reel

Symbol SRC60R030. T: TO-247 TR: Tape & Reel General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching

More information

GaN in Practical Applications

GaN in Practical Applications in Practical Applications 1 CCM Totem Pole PFC 2 PFC: applications and topology Typical AC/DC PSU 85-265 V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC

More information

Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF23N80K5 800 V 0.28 Ω 16 A 35 W TO-220FP Figure

More information

E Series Power MOSFET

E Series Power MOSFET E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted) N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

6th Generation Power MOSFET Super FAP-E 3S Low Q g Series

6th Generation Power MOSFET Super FAP-E 3S Low Q g Series 6th Generation Power MOSFET Super FAP-E 3S Low Q g Series Ryu Araki Yukihito Hara Sota Watanabe 1. Introduction In recent years, efforts to address environmental issues have focused on the goal of reducing

More information