600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)

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1 6 V/65 V fast body diode series (//)

2 technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved energy efficiency. It is the best choice for resonant switching topologies in high power SMPS applications like telecom, server and EV charging. In resonant topologies such as LLC or ZVS phase-shift full bridge under certain conditions hard commutation on the conduction body diode can occur. In these unwanted cases it is very important to reduce the generated losses by lowering the Q rr level of the body diode. Otherwise this hard commutation will lead to higher thermal stress resulting in the destruction of the device. Infineon s fast body diode series CFD/// offer the feature of industry leading Q rr to avoid such failures during a hard commutation event. MOSFET with integrated fast body diode Benefits of series is the successor to the well established series and targets new customer designs. This new high voltage series with integrated fast body diode completes the 7 family and offers valuable improvements compared to previous fast diode families. The product portfolio provides all benefits of fast switching superjunction MOSFETs and offers: Increased light load efficiency due to lower gate charge value Less energy gets stored in the output capacitance, which is crucial for efficiency in high line or light load conditions E oss Limited voltage overshoot during hard commutation BiC Q rr and t rr at repetitive commutation on body diode and low Q oss enable lower switching losses Improved cost/performance compared to 65 V predecessor Technology in THD and SMD packages offering BiC R DS(on) /package combinations Furthermore easy implementation as well as outstanding product quality and reliability remain key benefits of the series. Specification Symbol IPW65R8CFD IPW6R7 Benefits On-state resistance: Maximum rating, 25 C R DS(on) 8 mω 7 mω Total gate charge Q g 17 nc 67 nc Breakdown voltage V DS 65 V 6 V Reverse recovery charge Energy stored in the output capacitance Reverse recovery time Q rr 1 µc.57 µc E 4 V 12 µj 7.7 µj t rr 18 ns 124 ns Lower conduction losses Improved light load efficinecy Reduced switching losses Reduced switching losses Faster recovery What is the difference between and? is based on the technology, so the performance is comparable. addresses consumer and industrial applications. The series is even qualified to automotive standard AEC-Q11, and therefore perfectly suitable for design into automotive applications.

3 Feature comparison between and and closest competition Efficiency comparison between, and competition in 2 kw ZVS board Q rr comparision of 17 mω CFD vs. 19 mω range competition IPW6R31: R G = 5 Ω, V GS = 12 V Q rr [nc] Efficiency [%] %.17% 2 2 Comp. C Comp. A Comp. D Comp. B -32% E rr [µws] T rr [ns] % Comp. C Comp. A Comp. D Comp. B 1A 2A 3A 5A 1A 2A 3A Load current [A] IPW6R7 Competitor A Competitor C IPW65R8CFD Competitor B Competitor D IPW6R31 IPW6R37P7 ID [A] IPW65R41CFD IPW6R41P6 Improved energy efficiency over the whole load range Light load efficiency improvement due to signifcant reduction of Q g Lower R DS(on) offers improvement of conduction losses and allows customers to go to higher power density designs With the world s best Q rr is reduced by another 32 percent leading to highest efficiency and highest reliabilty in resonant switching SMPS applications Due to BiC Q rr offers lowest reverse recover energy (E rr ) at hard commutation events In some operating conditions a repetitive hard commutation can occur. Due to a significant reduction of Q rr /t rr /I rrm compared to a non fast diode device, offers highest reliabilty and an extra safety margin also under these conditions which makes it the ideal choice for resonant high power smps applications.

4 Voltage range 65 V 6 V 65 V Product family and R DS(on ) range * Applications and market segment.41 Ω 1.4 Ω.31 Ω.28 Ω**.48 Ω.66 Ω Lighting HID resonant half-bridge Solar DC-AC Server/telecom ZVS full-brige/llc UPS ZVS full-bridge EV charging ZVS full-bridge/llc Automotive resonant full-bridge Includes Infineon ICs * Recommended ** Further portfolio extension planned to cross reference and product portfolio (including wave 1) R DS(on) 65 V 6 V 65 V 6 V 65 V 6 V 65 V 6 V 65 V 6 V 65 V 6 V TO-247 TO-22 TO-22 FullPAK ThinPAK 8x8 DPAK D 2 PAK 144 IPD65R1K4CFD 95 IPD65R95CFD 66 IPL65R725CFD IPD65R66CFD 42 IPP65R42CFD IPA65R42CFD IPL6R46CFD IPD65R42CFD 28 IPP65R31CFD IPP6R28 IPA65R31CFD IPA6R28 IPL6R34CFD IPD6R28 IPB65R31CFD IPW65R19CFD IPW6R17 IPP65R19CFD IPP6R17 IPA65R19CFD IPA6R17 IPL6R21CFD IPL6R185 IPD6R17 IPB65R19CFD 145 IPW65R15CFD IPP65R15CFD IPA65R15CFD IPL6R165CFD IPB65R15CFD 15 IPW65R11CFD IPP65R11CFD IPA65R11CFD IPB65R11CFD 7 IPW65R8CFD IPW6R7 IPP6R7 IPL6R75 31 IPW65R41CFD IPW6R31 Note: Further portfolio extension planned for

5 Common applications and topologies Resonant LLC half-bridge HID lighting High voltage driver High voltage driver Infineon controller ICE1HSO1G PFC controller HDI lamp ballast controller Phase shift ZVS (ZVS full-bridge) Solar single-phase solution, isolated OptiMOS V AC 23 V AC V IGBT IGBT DC 12 V DC OptiMOS Automotive topology (on-board battery charger with ZVS phase shifted topology) Bridge rectifier PFC stage DC-DC stage N:1 U AC U Battery parts Other Infineon parts (, SiC, IGBT, Controller)

6 Available fast body diode portfolio Industrial product portfolio 6 V (product wave 1) R DS(on) [mω] ThinPAK 8x8 TO-252 DPAK TO-262 I 2 PAK TO-263 D 2 Pak TO-22 TO-22 FullPAK TO IPD6R28 IPP6R28 IPA6R28 17 IPL6R185 IPD6R17 IPP6R17 IPA6R17 IPW6R17 7 IPL6R75 IPP6R7 IPW6R7 31 IPW6R31 Note: Further portfolio extension planned for 65 V 14 IPD65R1K4CFD 95 IPD65R95CFD 66/725 IPL65R725CFD IPD65R66CFD IPI65R66CFD IPB65R66CFD IPP65R66CFD IPA65R66CFD IPW65R66CFD 42/46 IPL65R46CFD IPD65R42CFD IPI65R42CFD IPB65R42CFD IPP65R42CFD IPA65R42CFD IPW65R42CFD 31/34 IPL65R34CFD IPI65R31CFD IPB65R31CFD IPP65R31CFD IPA65R31CFD IPW65R31CFD 19/21 IPL65R21CFD IPI65R19CFD IPB65R19CFD IPP65R19CFD IPA65R19CFD IPW65R19CFD 15/165 IPL65R165CFD IPI65R15CFD IPB65R15CFD IPP65R15CFD IPA65R15CFD IPW65R15CFD 11 IPI65R11CFD IPB65R11CFD IPP65R11CFD IPA65R11CFD IPW65R11CFD 8 IPW65R8CFD 41 IPW65R41CFD Automotive product portfolio 65 V 66 IPD65R66 IPB65R66 IPP65R66 42 IPD65R42 31 IPB65R31 IPP65R31 19 IPB65R19 IPP65R19 IPW65R19 15 IPB65R15 IPP65R15 IPW65R15 11 IPB65R11 IPP65R11 IPW65R11 8 IPW65R8 48 IPW65R48 Power MOSFETs (naming system from 25 onwards) I P W 65 R 41 C F D A Company I = Infineon Device P = Power MOSFET Package type A = TO-22 FullPAK B = TO-263 (D 2 PAK) D = TO-252 (DPAK) I = TO-262 (I 2 PAK) L = ThinPAK 8x8 P = TO-22 U = TO-252 (IPAK) W = TO-247 Qualified to automotive standard AEC-Q11 Specification CFD = CFD In this case CFD as indication for with fast body diode R DS(on) [mω] R = R DS(on) Breakdown voltage Divided by 1 (6 x 1 = 6 V) and are recommended for new designs. For further information please go on: Order Number: B152-I139-V2-76-EU-EC-P All rights reserved. 218 Infineon Technologies AG