UT54ACS86E Quadruple 2-Input Exclusive OR Gates January, 2018 Datasheet

Transcription

1 UT54ACS86E Quadruple 2-Input Exclusive OR Gates January, 2018 Datasheet The most important thing we build is trust FEATURES m CRH CMOS process - Latchup immune High speed Low power consumption Wide power supply operating range from 3.0V to 5.5V Available QML Q or V processes 14-lead flatpack UT54ACS86E-SMD FUNCTION TABLE INPUTS OUTPUT A B Y L L L L H H H L H H H L DESCRIPTION The UT54ACS00E is a quadruple, two-input Exclusive OR gate. The circuits perform the Boolean functions Y = A B or Y = AB + AB in positive logic. An application is as a true/complement element. If one of the inputs is low, the other input will be reproduced in true form at the output. If one of the inputs is high, the signal on the other input will be reproduced inverted at the output. The device is characterized over full military temperature range of -55 C to +125 C. PINOUT A1 B1 Y1 A2 B2 Y2 V SS 14-Lead Flatpack TopView V DD B4 A4 Y4 B3 A3 Y3 LOGIC SYMBOL (1) A1 (2) B1 (4) =1 (3) Y1 LOGIC DIAGRAM A2 (5) B2 (9) A3 (10) B3 (12) A4 (13) B4 (6) Y2 (8) Y3 (11) Y4 Note: 1. Logic symbol in accordance with ANSI/IEEE standard and IEC Publication A1 B1 A2 B2 A3 B3 A4 B4 Y1 Y2 Y3 Y4 1 Cobham Semiconductor Solutions

2 OPERATIONAL ENVIRONMENT 1 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(si) SEU Threshold MeV-cm 2 /mg SEL Threshold 120 MeV-cm 2 /mg Neutron Fluence 1.0E14 n/cm 2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS 1 SYMBOL PARAMETER LIMIT UNITS V DD Supply voltage -0.3 to 7.0 V V I/O Voltage any pin -0.3 to V DD V T STG Storage Temperature range -65 to +150 C T J Maximum junction temperature +175 C T LS Lead temperature (soldering 5 seconds) +300 C JC Thermal resistance junction to case 15.0 C/W I I DC input current 10 ma P D Maximum package power dissipation Tc = +125 o C 3.2 W Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Per MIL-STD-883, method , Section 3.4.1, P D = (T j(max) - T c(max) ) / jc RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS V DD Supply voltage 3.0 to 5.5 V V IN Input voltage any pin 0 to V DD V T C Temperature range -55 to +125 C 2 Cobham Semiconductor Solutions

3 DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS86E 7 ( V DD = 3.0V to 5.5V; V SS = 0V 6 ; -55 C < T C < +125 C) SYMBOL DESCRIPTION CONDITION MIN MAX UNIT V IL Low-level input voltage 1 V DD from 3.0V to 5.5V 0.3V DD V V IH High-level input voltage 1 V DD from 3.0V to 5.5V 0.7V DD V I IN Input leakage current V IN = V DD or V SS -1 1 A V OL1 Low-level output voltage 3 I OL = 100 A 0.25 V V OH2 High-level output voltage 3 I OH = -100 A V DD V I OS1 Short-circuit output current 2,4 V O = V DD and V SS ma V DD from 4.5V to 5.5V I OS2 Short-circuit output current 2,4 V O = V DD and V SS ma V DD from 3.0V to 3.6V I OL1 Low level output current 9 V IN = V DD or V SS 8 ma V OL = 0.4V V DD from 4.5V to 5.5V I OL2 Low level output current 9 V IN = V DD or V SS 6 ma V OL = 0.4V V DD from 3.0V to 3.6V I OH1 High level output current 9 V IN = V DD or V SS -8 ma V OH = V DD -0.4V V DD from 4.5V to 5.5V I OH2 High level output current 9 V IN = V DD or V SS -6 ma V OH = V DD -0.4V V DD from 3.0V to 3.6V P total1 Power dissipation 2, 8, 10 C L = 50pF V DD = 4.5V to 5.5V P total2 Power dissipation 2, 8, 10 C L = 50pF V DD from 3.0V to 3.6V 1.0 mw/ MHz 0.5 mw/ MHz 3 Cobham Semiconductor Solutions

4 Pre-Rad 10 Quiescent All Device Types V IN = V DD or V SS I DDQ Supply Post-Rad Current Device Type - 03 Post-Rad Device Type - 02 C OUT Output capacitance 5 = 1MHz V DD = 0V V DD = V DD MAX A 15 pf C IN Input capacitance 5 = 1MHz V DD = 0V 15 pf Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = V IH (min) + 20%, - 0%; V IL = V IL (max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to V IH (min) and V IL (max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm 2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V SS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(si) or 1E6 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition and section Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A. 8. Power dissipation specified per switching output. 9. Guaranteed by characterization, but not tested. 10.Power does do not include power contribution of any TTLoutput sink current. 4 Cobham Semiconductor Solutions

5 AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS86E 2 ( V DD = 3.0V to 5.5V; V SS = 0V 1 ; -55 C < T C < +125 C) SYMBOL PARAMETER CONDITION V DD MINIMUM MAXIMUM UNIT t PLH Input to Yn C L = 50pF 4.5V to 5.5V ns 3.0V to 3.6V t PHL Input to Yn C L = 50pF 4.5V to 5.5V ns 3.0V to 3.6V Notes: 1. Maximum allowable relative shift equals 50mV. 2. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(si) or 1E6 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A and section Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A. 5 Cobham Semiconductor Solutions

6 Packaging All exposed metallized areas are gold plated over electroplated nickel per MIL-PRF The lid is electrically connected to V SS. 3. Lead finishes are in accordance with MIL-PRF Dimension symbol is in accordance with MIL- PRF Lead position and colanarity are not measured. Figure lead Flatpack 6 Cobham Semiconductor Solutions

7 Ordering Information: UT54ACS86E: SMD 5962 * ***** ** * * * Lead Finish: (Notes 1 & 2) A = Solder C = Gold X = Optional Package Type: X = 14-lead ceramic bottom-brazed dual-in-line Flatpack Class Designator: Q = QML Class Q V = QML Class V Device Type: 02 = 1 rad(si)/sec 03 = 50 to 300 rads(si)/sec Drawing Number: = UT54ACS86E Total Dose: (Note 3 and 4) R = 1E5 rads(si) F = 3E5 rads(si) G = 5E5 rads(si) H = 1E6 rads(si) Notes: 1. Lead finish (A,C, or X) must be specified. 2. If an X is specified when ordering, part marking will match the lead finish and will be either A (solder) or C (gold). 3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory. 4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(si) or 1E6 rads(si) and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A and section Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A. 7 Cobham Semiconductor Solutions

8 Aeroflex Colorado Springs - Datasheet Definition Advanced Datasheet - Product In Development Preliminary Datasheet - Shipping Prototype Datasheet - Shipping QML & Reduced HiRel The following United States (U.S.) Department of Commerce statement shall be applicable if these commodities, technology, or software are exported from the U.S.: These commodities, technology, or software were exported from the United States in accordnance with the Export Administration Regulations. Divsion contrary to the U.S. law is prohibited. Cobham Semiconductor Solutions 4350 Centennial Blvd Colorado Springs, CO E: info-ams@aeroflex.com T: Aeroflex Colorado Springs Inc., dba Cobham Semiconductor Solutions, reserves the right to make changes to any products and services described herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. 8 Cobham Semiconductor Solutions

9 DATA SHEET REVISION HISTORY Revision Date Description of Change Page 3 edited IDDQ Applied new Cobham Data Sheet template to the document. Author 1-18 Updates to reflect current SMD RT RT 9 Cobham Semiconductor Solutions