Coupled fiber taper extraction of 1.53 μm photoluminescence from erbium doped silicon nitride photonic crystal cavities

Size: px
Start display at page:

Download "Coupled fiber taper extraction of 1.53 μm photoluminescence from erbium doped silicon nitride photonic crystal cavities"

Transcription

1 Coupled fiber taper extraction of 1.53 μm photoluminescence from erbium doped silicon nitride photonic crystal cavities Gary Shambat 1,*, Yiyang Gong 1, Jesse Lu 1, Selçuk Yerci 2, Rui Li 2, Luca Dal Negro 2, and Jelena Vučković 1 1 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA 2 Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, USA *gshambat@stanford.edu Abstract: Optical fiber tapers are used to collect photoluminescence emission at ~1.5 µm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers Optical Society of America OCIS codes: ( ) Photonic crystals; ( ) Resonators; ( ) Integrated optics devices; ( ) Fiber optics and optical communications: Fiber optics References and links 1. D. A. B. Miller, Device requirements for optical interconnects to silicon chips, Proc. IEEE 97(7), (2009). 2. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, 40 Gbit/s silicon optical modulator for high speed applications, Electron. Lett. 43(22), (2007). 3. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C. C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, Low V pp, ultralow-energy, compact, high-speed silicon electro-optic modulator, Opt. Express 17(25), (2009). 4. L. Colace, M. Balbi, G. Masini, G. Assanto, H. C. Luan, and L. C. Kimerling, Ge on Si p-i-n photodiodes operating at 10 Gb/s, Appl. Phys. Lett. 88(10), (2006). 5. O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, Jr., and D. A. B. Miller, Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared, IEEE Photon. Technol. Lett. 19(20), (2007). 6. M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. Dal Negro, and J. Vuckovic, Photonic crystal and plasmonic silicon based light sources, IEEE J. Sel. Top. Quantum Electron. 16(1), (2010). 7. Y. Gong, M. Makarova, S. Yerci, R. Li, M. J. Stevens, B. Baek, S. W. Nam, R. H. Hadfield, S. N. Dorenbos, V. Zwiller, J. Vuckovic, and L. Dal Negro, Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform, Opt. Express 18(3), (2010). 8. K. Srinivasan, P. E. Barclay, M. Borselli, and O. J. Painter, An optical-fiber-based probe for photonic crystal microcavities, IEEE J. Sel. Areas Comm. 23(7), (2005). 9. C. Grillet, C. Monat, C. Smith, B. Eggleton, D. Moss, S. Frederick, D. Dalacu, P. Poole, J. Lapointe, G. Aers, and R. Williams, Nanowire coupling to photonic crystal nanocavities for single photon sources, Opt. Express 15(3),1267 (2007). 10. I. Hwang, S. K. Kim, J. Yang, S. H. Kim, S. Lee, and Y. Lee, Curved-microfiber photon coupling for photonic crystal light emitter, Appl. Phys. Lett. 87(13), (2005). 11. T. A. Birks, and Y. W. Li, The Shape of Fiber Tapers, J. Lightwave Technol. 10(4), (1992). 12. Y. Jung, G. Brambilla, and D. J. Richardson, Optical microfiber coupler for broadband single-mode operation, Opt. Express 17(7), (2009). 13. S. Yerci, R. Li, O. Kucheyev, T. van Buuren, S. Basu, and L. Dal Negro, Energy transfer and 1.54 μm emission in amorphous silicon nitride films, Appl. Phys. Lett. 95(3), (2009). (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5964

2 14. Y. Akahane, T. Asano, B. S. Song, and S. Noda, High-Q photonic nanocavity in a two-dimensional photonic crystal, Nature 425(6961), (2003). 15. J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, Optimization of the Q factor in photonic crystal microcavities, IEEE J. Quantum Electron. 38(7), (2002). 16. M. Kim, J. Yang, Y. Lee, and I. Hwang, Influence of etching slope on two-dimensional photonic crystal slab resonators, J Korean Phys Soc. 50(4), (2007). 17. S. Iwamoto, Y. Arakawa, and A. Gomyo, Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature, Appl. Phys. Lett. 91(21), (2007). 18. C. Manolatou, M. J. Khan, S. Fan, P. R. Villeneuve, H. A. Haus, and J. D. Joannopoulos, Coupling of modes analysis of resonant channel add drop filters, IEEE J. Quantum Electron. 35(9), (1999). 19. I. Hwang, G. Kim, and Y. Lee, Optimization of coupling between photonic crystal resonator and curved microfiber, IEEE J. Quantum Electron. 42(2), (2006). 20. M. W. Lee, C. Grillet, C. G. Poulton, C. Monat, C. L. C. Smith, E. Mägi, D. Freeman, S. Madden, B. Luther- Davies, and B. J. Eggleton, Characterizing photonic crystal waveguides with an expanded k-space evanescent coupling technique, Opt. Express 16(18), (2008). 21. I. Hwang, and Y. Lee, Unidirectional, efficiency-controlled coupling from microcavity using reflection feedback, IEEE J. Sel. Top. Quantum Electron. 13(2), (2007). 1. Introduction Optical interconnects have the potential to improve data communication in computer systems by providing a high bandwidth, low power alternative to present electrical interconnects. Particularly for off-chip links, where traditional metal interconnects suffer from large capacitive delays and high energy consumption, implementing optical interconnects may be very advantageous [1]. While much progress has been made with CMOS-compatible modulators and detectors [2 5], a suitable light source that is well integrated with a silicon platform remains to be demonstrated. Due to silicon s indirect band gap, light emission from the semiconductor is weak and alternatives methods of light extraction such as through incorporated emitters are necessary. Recently, it was shown that photonic crystal (PC) cavities in erbium-doped silicon nitride (Er:SiN x ) exhibited linewidth narrowing with increased optical pump power [6,7], demonstrating that 31% of Er ions can be excited under optical pumping. The amorphous silicon nitride provides a host for erbium dopants which luminesce at the traditional telecom wavelength range. Such a material may be suitable for an on-chip amplifier or laser source in the future. To connect a nanoscale photonic crystal cavity to the off-chip environment of an optical interconnect system, silica fiber tapers may be used to in- and out-couple light efficiently. Fiber tapers have been shown to be useful not only in probing and characterizing cavities [8,9], but also in providing optical pumping for a laser and extracting photoluminescence [10]. Because fiber tapers rely on resonant evanescent coupling, they can inject and extract light with much higher efficiency than with free space techniques. We report the first study on the extraction of photoluminescence from Er:SiN x PC cavities using fiber tapers. We find that a greater collection efficiency can be obtained using the evanescent coupling method compared to out-coupling through free space; experimentally, the collection efficiency into a single arm of the fiber taper is increased 2.5 times relative to free space, and theoretically this could be improved by another factor of 3 by minimizing the scattering losses within the short taper transition regions. We also demonstrate that a broad tuning range of quality factor (up to 98% of the intrinsic Q value) is attainable by altering the strength of the coupling and thus the coupling efficiency. 2. Fabrication 2.1 Taper fabrication Fiber tapers were fabricated using the well known flame brushing technique [11] in which a standard single mode communication fiber is simultaneously heated by a torch and pulled outward by motorized stages. A hydrogen-oxygen torch was used to provide a small flame that was quickly scanned back and forth along the designated hot zone of the fiber. In order to provide the best mechanical stability of the taper probe, the pull length was kept to only ~3 mm, while the taper diameter was ~1 μm. This diameter was chosen because when the taper is below approximately 1.1 μm the waveguide becomes single mode [12]. This single (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5965

3 mode behavior cleans up coupling spectra and removes erroneous fringing in the transmission and photoluminescence spectra. After the fiber tapers were drawn, they were carefully bent such that the radius of curvature was small enough for the tapers to interact only with photonic crystal cavities and not the nearby substrate. An optical image of a fabricated taper is shown in Fig. 1(a). The whole fiber was mounted to a glass slide and was fusion spliced into connector cables. Finally, the slide was mounted in a measurement rig where the taper could be positioned onto photonic crystal cavities via both motorized and manual nanopositioning stages. The transmission of the mounted fiber taper was 16%, with most of the loss coming from scattering within the short taper transition regions. 2.2 Cavity fabrication Photonic crystal structures were fabricated in a two layer membrane consisting of a bottom silicon layer and a top, light emitting, erbium-doped silicon nitride (Er:SiNx) layer, same as in our previous work [7]. Approximately 110 nm of erbium-doped amorphous silicon nitride was deposited on a silicon on insulator (SOI) wafer with a silicon thickness of 250 nm by N 2 reactive magnetron co-sputtering from Si and Er targets in a Denton Discovery 18 confocaltarget sputtering system [13]. Photonic crystal L3 cavities [14] were patterned with an electron beam lithography system using ZEP-520A as the resist. A Cl 2 :HBr dry etch chemistry was used to etch the air holes and the sacrificial oxide layer in the SOI was undercut at the end using a 6:1 Buffered oxide etch to form the suspended PC membrane. The lattice periodicity was set to a = 410 nm, and hole radius was r = 125 nm. Additional outward shifts of 0.15a and 0.075a for the on-axis holes surrounding the cavity were made to increase the intrinsic Q of the cavity. Figure 1(b) shows a scanning electron microscope (SEM) image of the tested cavity. Fig. 1. (a) Optical microscope image of the fiber taper. (b) SEM picture of the fabricated SiN x /Si photonic crystal cavity. (c) Calculated E y field of the fundamental mode of the photonic crystal. 3. Theoretical analysis 3.1 Free space collection efficiency Finite difference time domain (FDTD) calculations were performed on the cavity structure with the size parameters of the SEM image above. The computational grid contained 10 mirror periods on each side of the cavity in the y direction and 12 mirror periods on each side in the x direction. Q-factor calculations were performed by integrating the power flux through the appropriate boundaries: top and bottom half spaces for the vertical Q s, slab walls for the in-plane Q, and fiber facets for the fiber Q. The fundamental mode profile is shown in Fig. 1(c). In order to estimate the percentage of light collected by our microscope objective (in free space collection), a far-field calculation of the cavity mode was performed using a twodimensional Fourier Transform to calculate its k-space distribution [15]. This method allows for the accurate prediction of power flow through a particular geometrical cone of radiation without requiring a massive FDTD space. In the limit that the full hemisphere of radiation is chosen, the vertical Q would be recovered, in agreement with FDTD simulations. For this study, the total power radiated within a 0.5 numerical aperture (NA) objective was determined to be 10% of the total emission into the half space above the slab. The low value is not (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5966

4 surprising if one examines the k-space map for the cavity E y field shown in Fig. 2. The transverse electric-like (TE-like) fundamental mode is predominantly E y in character and from the k-space pattern in Fig. 2(b), we see that the magnitude of the components radiated within the NA cone is much smaller than the sum inside the light cone. By taking account radiation through the slab and bottom direction, the total efficiency of collection into the objective is given as 0.1 1/Q top /(1/Q top + 1/Q + 1/Q bot ) = 1.6%, where Q top, Q, and Q bot denote the top, inplane, and bottom Q s, respectively. Fig. 2. (a) K-space map for the E y component of the fundamental mode, taken just above the PC slab. The white circle is the light cone while the green circle is the NA = 0.5 cone. (b) Zoomed in image of the previous plot highlighting the difference between the radiated components captured and not captured by the objective lens. The magnitude of the k components inside the NA = 0.5 cone is clearly much lower than those outside the cone. 3.2 Coupled cavity Q-factor The intrinsic cavity Q for the fundamental mode was found to be 16,000 and is dominated by the in-plane Q which was only 26,000. Due to asymmetry of the PC in the vertical direction, the confined TE-like cavity mode couples to TM-like propagating Bloch states, which suffer from an incomplete bandgap and hence leak out of the cavity [16]. In contrast, a similar PC structure composed of just the symmetric silicon layer has an in-plane Q of nearly 900,000 and a net Q of 61,000. Figure 3 shows a plot of the various Q-factors as a fiber taper, represented as a cylinder of silica (n = 1.45, diameter = 1 μm), is scanned across the surface of the L3 cavity along the y- axis. For zero offset, we see that the fiber Q (Q f, ) is low, indicating a high decay rate due to the evanescent coupling into the fiber. (We note that Q f describes the power coupled from the cavity to the fiber taper, and is calculated by integrating power lost through both ends of the fiber taper). The cavity in-plane Q (Q ) is also reduced by a factor of two due to the increased vertical asymmetry of the structure. This parasitic decay reduces the total Q (Q tot ) beyond the intrinsic limit of just additional decay into the fiber. As the taper is shifted to the side of the cavity, several trends can be observed. First, Q f remains relatively constant up to 350 nm before increasing exponentially with taper offset. The decrease in coupling strength due to a smaller evanescent field overlap for the offset taper causes Q f to increase exponentially. Second, there are points of enhanced parasitic loss at 350 nm and 1 μm as is evidenced by the reduction in Q and Q tot. These points are likely regions where the composite cavity structure has greatest asymmetry and coupling into leaky TM modes. Finally, as the taper displacement grows beyond 1.2 μm, all Q values asymptotically approach their intrinsic limits. We still see that even for large offsets, the fiber taper can couple with the cavity without inducing parasitic decay. In particular, at 1.2 μm offset, Q is (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5967

5 close to its intrinsic limit and the coupling efficiency is given by η = (1/Q f )/(1/Q tot ) = 13,000/553,000 = 2.4%. The maximal coupling strength is expectedly seen to occur when the taper offset is zero. In this case, the coupling efficiency is 25%. Therefore simulations predict that a much larger (~16-fold) coupling efficiency can be achieved into the fiber relative to the coupling to free space and a collection lens of NA = Experiment Fig. 3. Variation of the fiber, in-plane, and total Q factors as a function of taper displacement, d, along the y axis. When the taper is directly over the cavity, the fiber Q goes down expectedly and the in-plane Q is parasitically reduced by a factor of two. For large taper offsets, the Q- values approach their intrinsic limits. Inset shows the cross-section of the FDTD simulated structure. The taper is aligned along the cavity axis direction (i.e., the x direction in Fig. 1) and is displaced along the y direction. 4.1 Free space photoluminescence Photoluminescence (PL) from fabricated photonic crystal cavities was collected in free space, in the direction perpendicular to the PC plane, through a 100x (NA = 0.5) objective lens, directed toward a monochromator, and detected with a liquid nitrogen cooled linear InGaAs CCD array, same as in our earlier work [7]. PL from the cavity region was spatially filtered with an iris in order to minimize the background signal and optimized for greatest collection efficiency. Samples were pumped with a 980 nm laser diode at 6 mw measured before the objective lens. Figure 4 displays the PL of the L3 cavity showing the fundamental resonance at approximately nm at the maximum of erbium s typical emission spectrum. This particular cavity was chosen for testing because its cavity resonance overlaps with the peak emission of erbium. A higher order mode is observed at 1480 nm and the features at 1560 nm are likely band edge modes [17]. The measured Q value of the intrinsic, unloaded cavity was found to be 12,630 as seen by the fit to a Lorentzian in the inset of Fig. 4. (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5968

6 Fig. 4. PL spectrum of the Er:SiNx on Si PC cavity, collected from free space in the direction perpendicular to the PC plane (through an objective lens with NA = 0.5). The fundamental cavity mode corresponds to the highest peak near 1530nm, and the background emission has the expected erbium profile. The inset shows the fundamental peak zoomed in with a Lorentzian fit. 4.2 Passive (transmission) cavity measurements via fiber taper Transmission measurements were performed by coupling a broadband source into a fiber taper that was well aligned with an L3 cavity main axis, and by measuring the spectrum at the output of the fiber with an optical spectrum analyzer (OSA) (Fig. 5(a)). Light was not polarized at the input so that all the modes of the cavity could be excited, thus facilitating the identification of the fundamental mode. The taper rested on the sample surface. Figure 5(b) shows a full transmission spectrum of the cavity whose PL is shown in Fig. 4. The fundamental resonance is clearly seen at about 1530 nm, as in Fig. 4, as well as two higher order modes at shorter wavelengths. Four additional modes were found at wavelengths below 1400 nm. The background loss of 2-5 db comes primarily from TM loss in the PC slab. (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5969

7 Fig. 5. (a) Experimental setup for measurement of transmission through the Er:SiNx on Si PC cavities via fiber taper. The fiber taper is aligned and in contact with the L3 cavity. The output spectrum of a broadband source at the input of the fiber is measured by an OSA. Inset shows optical picture of aligned taper. (b) Full transmission spectrum of the L3 cavity. (c) Multiple transmission spectra for the same cavity but with different fiber taper offsets along the y axis. In Fig. 5(c), multiple transmission scans are taken for the taper as it is progressively offset from the main axis in of the cavity in the y-direction. The short pull length of the taper was necessary for the tension of the fiber to be large enough to allow this seamless translation, which is otherwise prevented by the Van der Waals sticking attraction between the fiber and semiconductor. As can be seen in the plot, as the fiber taper is dragged away from the cavity center, the transmission coupling magnitude drops and the Q factor increases. This is not surprising since the coupling coefficient is given by the overlap between the cavity and waveguide modes [18]. As the taper shifts, this overlap decreases along with the transmission coupling. Likewise, since this secondary decay path via the taper decreases with taper offset, the measured Q value approaches the intrinsic limit. Also worth noting is the red shift induced by the taper as it moves over the cavity which is due to the increased effective index of the cavity. 4.3 Fiber-outcoupled photoluminescence Fiber taper coupling provides a convenient means to extract and collect photoluminescence from a cavity mode that would ordinarily radiate non-uniformly into free space. A well designed cavity (such as the described L3 type) is meant to have few wave vector components in the light cone in order to maximize the Q (see Fig. 2) [14]. The fiber taper can, on the other hand, extract those components that are outside the light cone through evanescent coupling. PL measurements with a coupled fiber taper were taken under similar conditions as those for the free space measurement. To do so, a 980 nm laser diode pump with power 6 mw was focused to a small spot where the fiber taper rested on the cavity. The output from one end of the fiber was then sent to the same spectrometer setup as before (Fig. 6(a)). (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5970

8 Fig. 6. (a) Experimental setup for outcoupling PL from Er:SiNx on Si PC cavities via fiber tapers. Pump light is focused on the cavity while PL emission is collected by the same fiber taper and sent to a spectrometer. (b) Full PL spectrum for fiber-coupled emission from the PC cavity. The integrated intensity is 2.5x larger than for the free space measurement and the peak has a Q of 4,300. (c) A different data point for which the taper was offset from the cavity so that the cavity was minimally loaded. When the taper is positioned over the center of the cavity, the PL extraction is maximized as can be seen in Fig. 6(b). The non-resonant background PL of erbium is minimized in this configuration while the integrated intensity of the fundamental mode is 2.5 times that collected through free space (in the vertical direction) and an NA = 0.5 objective lens (Fig. 4). Since the taper has a total transmission of ~0.16, the transmission of each taper arm is roughly 0.4 assuming symmetric loss. This means that the PL intensity coupled into one taper arm before loss is actually 2.5/0.4 = 6.25 times the free space collected PL. Adding the contribution from both taper arms gives a total enhancement of 12.5 before loss. Since the radiation calculation revealed that collection through free space is 1.6%, the total fiber coupling efficiency is 20%, while the total fiber collection efficiency through one arm with loss is 4%. This lossless efficiency value is pretty close to the result predicted by simulation and the slight discrepancy could be due to differences in the actual taper size and exact taper positioning. Such a high extraction efficiency is made possible because the fiber taper relies on evanescent coupling from the cavity and is not limited geometrically by the finite extent of an objective lens. It is interesting to note that a large coupling ratio can be obtained despite the phase matching between the taper and cavity not being fully optimized [19]. This is a result of the fact that a strongly localized cavity resonance spans a number of k-vectors, which permits coupling to a taper mode. Additionally, the curved taper itself spans a wide k-space [20] as was found out from separate coupling experiments with waveguides. Figure 6(c) shows the PL of the cavity resonance for the case when the taper is displaced from the cavity main axis. The Q in this case is found to be approximately 12,350, which corresponds to 98% of the intrinsic Q value. Coupling to fiber tapers in direct contact measurements is usually associated with high loading of the cavities due to either direct coupling into the fiber or parasitic loss into other decay paths [19]. As expected, we confirm that by reducing the coupling strength (by decreasing the mode field overlap), the cavity Q can remain very high. This agrees with simulation results in Fig. 3. The ability to have a control over the cavity Q is important for PC cavity-based lasers or amplifiers which need to have as low loss as possible. (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5971

9 To more clearly see the relationship between collection efficiency and measured Q value, a series of spectra were taken for various taper offsets from the cavity as seen in Fig. 7(a). The fiber taper was slowly displaced along y-direction and as expected, the measured cavity Q increased while the collected intensity decreased. Figure 7(b) shows a few traces at different coupling strengths where the intensity-q relationship is seen clearly. This behavior can be described by an efficiency relationship under the condition that no parasitic loading of the cavity takes place [9]: Q t 1 (1) Q Here η is the collection efficiency given as the decay rate into the fiber divided by the total decay rate, Q t is the loaded cavity Q, and Q 0 is the intrinsic Q. The straight line in Fig. 7(a) is a fit to the data using Eq. (1). As can be seen in the plot, the fit is only good for the region of low coupling (high Q) and deviates significantly where taper loading is strong. This is expected from simulations, since for high coupling the parasitic loss grows and the denominator in Eq. (1) would have to be modified by adding the parasitic loss, and thereby lowering the intrinsic Q 0 value. The additional degradation is due to the newly generated decay from the parasitic TM coupling. For example, the data point with Q = 4,300 and collected intensity 43,000 counts per second (corresponding to Fig. 6(b) above) should have an efficiency of η = 1 4,300/12,630 = However, the actual efficiency is limited to 0.2 due to the parasitic loss which reduces Q Conclusion Fig. 7. (a) Collected PL intensity and the total cavity Q-factor as the fiber taper is offset from the cavity along the y-direction. The blue line is a fit to the data. (b) Several spectra for the data in (a). As the taper moves away from the cavity the integrated intensity decreases and the Q increases. The peaks are centered together for easier visualization (but as shown in Fig. 6, the cavity resonance redshifts for higher cavity-taper overlap). In summary, we demonstrate fiber taper coupling and efficient PL extraction from a CMOScompatible light-emitting material, Er:SiNx embedded in a Si PC cavity. The collection efficiency through one arm of the fiber taper was 2.5 times the collection through free space and an objective lens with NA = 0.5. Better fabrication of short tapers or using long lossless tapers coupled to cavities on elevated membranes [8] could improve the collection efficiency into one taper arm by another factor of 3. Finally, the full collection enhancement of 12.5 times could be achieved with an interferometric taper design where the full signal is collected into one arm [21]. Larger collection enhancements are also possible by better phase matching of the fiber and cavity modes. The loaded quality factor of the coupled cavity can remain very high and in the limit of weak coupling can be as high as 98% of its intrinsic value. A broad (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5972

10 tuning range of collection efficiencies and quality factors is made possible by a variable coupling strength inversely proportional to the taper displacement from the cavity. The fiber taper provides a convenient platform for linking the nano-scale on-chip environment with the off-chip interconnect network, which is important for building devices such as on-chip optical amplifiers. For the promising erbium-doped silicon nitride material, fiber coupled emission is an easy and efficient way to extract light and connect to outside systems. Acknowledgements The authors would like to acknowledge the MARCO Interconnect Focus Center and the U.S. Air Force MURI program under Award No. FA for funding. Gary Shambat and Yiyang Gong would also like to thank the NSF GRF for support. The fabrication has been performed in the Stanford Nanofabrication Facilities. (C) 2010 OSA 15 March 2010 / Vol. 18, No. 6 / OPTICS EXPRESS 5973

Silicon-based photonic crystal nanocavity light emitters

Silicon-based photonic crystal nanocavity light emitters Silicon-based photonic crystal nanocavity light emitters Maria Makarova, Jelena Vuckovic, Hiroyuki Sanda, Yoshio Nishi Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4088

More information

Impact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b,

Impact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b, Impact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b, a Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde

More information

Tunable-wavelength second harmonic generation from GaP photonic crystal cavities coupled to fiber tapers

Tunable-wavelength second harmonic generation from GaP photonic crystal cavities coupled to fiber tapers Tunable-wavelength second harmonic generation from GaP photonic crystal cavities coupled to fiber tapers Gary Shambat 1,*, Kelley Rivoire 1, Jesse Lu 1, Fariba Hatami 2, and Jelena Vučković 1 1 Department

More information

Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator

Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator Gary Shambat, 1,* Bryan Ellis, 1 Marie A. Mayer, 2 Arka Majumdar, 1 Eugene E. Haller, 2 and Jelena Vučković

More information

Cavity QED with quantum dots in semiconductor microcavities

Cavity QED with quantum dots in semiconductor microcavities Cavity QED with quantum dots in semiconductor microcavities M. T. Rakher*, S. Strauf, Y. Choi, N.G. Stolz, K.J. Hennessey, H. Kim, A. Badolato, L.A. Coldren, E.L. Hu, P.M. Petroff, D. Bouwmeester University

More information

Waveguiding in PMMA photonic crystals

Waveguiding in PMMA photonic crystals ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 12, Number 3, 2009, 308 316 Waveguiding in PMMA photonic crystals Daniela DRAGOMAN 1, Adrian DINESCU 2, Raluca MÜLLER2, Cristian KUSKO 2, Alex.

More information

Wavelength-independent coupler from fiber to an on-chip cavity, demonstrated over an 850nm span

Wavelength-independent coupler from fiber to an on-chip cavity, demonstrated over an 850nm span Wavelength-independent coupler from fiber to an on-chip, demonstrated over an 85nm span Tal Carmon, Steven Y. T. Wang, Eric P. Ostby and Kerry J. Vahala. Thomas J. Watson Laboratory of Applied Physics,

More information

Supplementary information for Stretchable photonic crystal cavity with

Supplementary information for Stretchable photonic crystal cavity with Supplementary information for Stretchable photonic crystal cavity with wide frequency tunability Chun L. Yu, 1,, Hyunwoo Kim, 1, Nathalie de Leon, 1,2 Ian W. Frank, 3 Jacob T. Robinson, 1,! Murray McCutcheon,

More information

Design and Analysis of Resonant Leaky-mode Broadband Reflectors

Design and Analysis of Resonant Leaky-mode Broadband Reflectors 846 PIERS Proceedings, Cambridge, USA, July 6, 8 Design and Analysis of Resonant Leaky-mode Broadband Reflectors M. Shokooh-Saremi and R. Magnusson Department of Electrical and Computer Engineering, University

More information

CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER

CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER As we discussed in chapter 1, silicon photonics has received much attention in the last decade. The main reason is

More information

Horizontal single and multiple slot waveguides: optical transmission at λ = 1550 nm

Horizontal single and multiple slot waveguides: optical transmission at λ = 1550 nm Horizontal single and multiple slot waveguides: optical transmission at λ = 1550 nm Rong Sun 1 *, Po Dong 2 *, Ning-ning Feng 1, Ching-yin Hong 1, Jurgen Michel 1, Michal Lipson 2, Lionel Kimerling 1 1Department

More information

InP-based Waveguide Photodetector with Integrated Photon Multiplication

InP-based Waveguide Photodetector with Integrated Photon Multiplication InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,

More information

Vertical External Cavity Surface Emitting Laser

Vertical External Cavity Surface Emitting Laser Chapter 4 Optical-pumped Vertical External Cavity Surface Emitting Laser The booming laser techniques named VECSEL combine the flexibility of semiconductor band structure and advantages of solid-state

More information

Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform

Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform Yiyang Gong* 1, Maria Makarova* 1, Selçuk Yerci 2, Rui Li 2, Martin J. Stevens 4, Burm Baek

More information

Dipole induced transparency in waveguide coupled photonic crystal cavities

Dipole induced transparency in waveguide coupled photonic crystal cavities Dipole induced transparency in waveguide coupled photonic crystal cavities Andrei Faraon 1, Ilya Fushman 1, Dirk Englund 1, Nick Stoltz 2, Pierre Petroff 2, Jelena Vučković 1 1 E. L. Ginzton Laboratory,

More information

Coupling of small, low-loss hexapole mode with photonic crystal slab waveguide mode

Coupling of small, low-loss hexapole mode with photonic crystal slab waveguide mode Coupling of small, low-loss hexapole mode with photonic crystal slab waveguide mode Guk-Hyun Kim and Yong-Hee Lee Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 35-71,

More information

InGaAsP photonic band gap crystal membrane microresonators*

InGaAsP photonic band gap crystal membrane microresonators* InGaAsP photonic band gap crystal membrane microresonators* A. Scherer, a) O. Painter, B. D Urso, R. Lee, and A. Yariv Caltech, Laboratory of Applied Physics, Pasadena, California 91125 Received 29 May

More information

Plane wave excitation by taper array for optical leaky waveguide antenna

Plane wave excitation by taper array for optical leaky waveguide antenna LETTER IEICE Electronics Express, Vol.15, No.2, 1 6 Plane wave excitation by taper array for optical leaky waveguide antenna Hiroshi Hashiguchi a), Toshihiko Baba, and Hiroyuki Arai Graduate School of

More information

Investigation of the Near-field Distribution at Novel Nanometric Aperture Laser

Investigation of the Near-field Distribution at Novel Nanometric Aperture Laser Investigation of the Near-field Distribution at Novel Nanometric Aperture Laser Tiejun Xu, Jia Wang, Liqun Sun, Jiying Xu, Qian Tian Presented at the th International Conference on Electronic Materials

More information

Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides

Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides Yaming Li, Chong Li, Chuanbo Li, Buwen Cheng, * and Chunlai Xue State Key Laboratory on Integrated Optoelectronics,

More information

Nd:YSO resonator array Transmission spectrum (a. u.) Supplementary Figure 1. An array of nano-beam resonators fabricated in Nd:YSO.

Nd:YSO resonator array Transmission spectrum (a. u.) Supplementary Figure 1. An array of nano-beam resonators fabricated in Nd:YSO. a Nd:YSO resonator array µm Transmission spectrum (a. u.) b 4 F3/2-4I9/2 25 2 5 5 875 88 λ(nm) 885 Supplementary Figure. An array of nano-beam resonators fabricated in Nd:YSO. (a) Scanning electron microscope

More information

Integrated into Nanowire Waveguides

Integrated into Nanowire Waveguides Supporting Information Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides Anthony Fu, 1,3 Hanwei Gao, 1,3,4 Petar Petrov, 1, Peidong Yang 1,2,3* 1 Department of Chemistry,

More information

THE WIDE USE of optical wavelength division multiplexing

THE WIDE USE of optical wavelength division multiplexing 1322 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 35, NO. 9, SEPTEMBER 1999 Coupling of Modes Analysis of Resonant Channel Add Drop Filters C. Manolatou, M. J. Khan, Shanhui Fan, Pierre R. Villeneuve, H.

More information

Mode analysis of Oxide-Confined VCSELs using near-far field approaches

Mode analysis of Oxide-Confined VCSELs using near-far field approaches Annual report 998, Dept. of Optoelectronics, University of Ulm Mode analysis of Oxide-Confined VCSELs using near-far field approaches Safwat William Zaki Mahmoud We analyze the transverse mode structure

More information

Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs

Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs Safwat W.Z. Mahmoud Data transmission experiments with single-mode as well as multimode 85 nm VCSELs are carried out from a near-field

More information

2D silicon-based surface-normal vertical cavity photonic crystal waveguide array for high-density optical interconnects

2D silicon-based surface-normal vertical cavity photonic crystal waveguide array for high-density optical interconnects 2D silicon-based surface-normal vertical cavity photonic crystal waveguide array for high-density optical interconnects JaeHyun Ahn a, Harish Subbaraman b, Liang Zhu a, Swapnajit Chakravarty b, Emanuel

More information

Physics of Waveguide Photodetectors with Integrated Amplification

Physics of Waveguide Photodetectors with Integrated Amplification Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa

More information

Photonic Crystals for Confining, Guiding, and Emitting Light

Photonic Crystals for Confining, Guiding, and Emitting Light 4 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 1, NO. 1, MARCH 2002 Photonic Crystals for Confining, Guiding, and Emitting Light Axel Scherer, Oskar Painter, Jelena Vuckovic, Marko Loncar, and Tomoyuki Yoshie

More information

On-chip Si-based Bragg cladding waveguide with high index contrast bilayers

On-chip Si-based Bragg cladding waveguide with high index contrast bilayers On-chip Si-based Bragg cladding waveguide with high index contrast bilayers Yasha Yi, Shoji Akiyama, Peter Bermel, Xiaoman Duan, and L. C. Kimerling Massachusetts Institute of Technology, 77 Massachusetts

More information

Silicon photonic devices based on binary blazed gratings

Silicon photonic devices based on binary blazed gratings Silicon photonic devices based on binary blazed gratings Zhiping Zhou Li Yu Optical Engineering 52(9), 091708 (September 2013) Silicon photonic devices based on binary blazed gratings Zhiping Zhou Li Yu

More information

Compact hybrid TM-pass polarizer for silicon-on-insulator platform

Compact hybrid TM-pass polarizer for silicon-on-insulator platform Compact hybrid TM-pass polarizer for silicon-on-insulator platform Muhammad Alam,* J. Stewart Aitchsion, and Mohammad Mojahedi Department of Electrical and Computer Engineering, University of Toronto,

More information

THE PAST rapid emergence of optical microcavity devices,

THE PAST rapid emergence of optical microcavity devices, IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 1, NO. 1, MARCH 2002 1 Photonic Crystals for Confining, Guiding, and Emitting Light Axel Scherer, Oskar Painter, Jelena Vuckovic, Marko Loncar, and Tomoyuki Yoshie

More information

Chapter 6 Photoluminescence Measurements of Quantum-Dot-Containing Microdisks Using Optical Fiber Tapers

Chapter 6 Photoluminescence Measurements of Quantum-Dot-Containing Microdisks Using Optical Fiber Tapers 181 Chapter 6 Photoluminescence Measurements of Quantum-Dot-Containing Microdisks Using Optical Fiber Tapers The ability to efficiently couple light into and out of semiconductor microcavities is an important

More information

Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface- Emitting Lasers on Silicon

Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface- Emitting Lasers on Silicon Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface- Emitting Lasers on Silicon Deyin Zhao a, Shihchia Liu a, Hongjun Yang, Zhenqiang Ma, Carl Reuterskiöld-Hedlund 3, Mattias Hammar 3, and

More information

New Waveguide Fabrication Techniques for Next-generation PLCs

New Waveguide Fabrication Techniques for Next-generation PLCs New Waveguide Fabrication Techniques for Next-generation PLCs Masaki Kohtoku, Toshimi Kominato, Yusuke Nasu, and Tomohiro Shibata Abstract New waveguide fabrication techniques will be needed to make highly

More information

Optics Communications

Optics Communications Optics Communications 283 (2010) 3678 3682 Contents lists available at ScienceDirect Optics Communications journal homepage: www.elsevier.com/locate/optcom Ultra-low-loss inverted taper coupler for silicon-on-insulator

More information

Analysis of characteristics of bent rib waveguides

Analysis of characteristics of bent rib waveguides D. Dai and S. He Vol. 1, No. 1/January 004/J. Opt. Soc. Am. A 113 Analysis of characteristics of bent rib waveguides Daoxin Dai Centre for Optical and Electromagnetic Research, Joint Laboratory of Optical

More information

Design, Simulation & Optimization of 2D Photonic Crystal Power Splitter

Design, Simulation & Optimization of 2D Photonic Crystal Power Splitter Optics and Photonics Journal, 2013, 3, 13-19 http://dx.doi.org/10.4236/opj.2013.32a002 Published Online June 2013 (http://www.scirp.org/journal/opj) Design, Simulation & Optimization of 2D Photonic Crystal

More information

Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit

Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit Daisuke Shimura Kyoko Kotani Hiroyuki Takahashi Hideaki Okayama Hiroki Yaegashi Due to the proliferation of broadband services

More information

S-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique

S-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique S-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique Chien-Hung Yeh 1, *, Ming-Ching Lin 3, Ting-Tsan Huang 2, Kuei-Chu Hsu 2 Cheng-Hao Ko 2, and Sien Chi

More information

Supplementary Figures

Supplementary Figures Supplementary Figures Supplementary Figure 1: Mach-Zehnder interferometer (MZI) phase stabilization. (a) DC output of the MZI with and without phase stabilization. (b) Performance of MZI stabilization

More information

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects By Mieke Van Bavel, science editor, imec, Belgium; Joris Van Campenhout, imec, Belgium; Wim Bogaerts, imec s associated

More information

A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product

A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product Myung-Jae Lee and Woo-Young Choi* Department of Electrical and Electronic Engineering,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Supplementary Information "Large-scale integration of wavelength-addressable all-optical memories in a photonic crystal chip" SUPPLEMENTARY INFORMATION Eiichi Kuramochi*, Kengo Nozaki, Akihiko Shinya,

More information

Photonic Crystal Cavities

Photonic Crystal Cavities 2013 Nanophotonics and integrated optics This whitepaper gives a general overview on different concepts of photonic crystal cavities. Important figures such as the transmission, the mode volume and the

More information

InP-based Waveguide Photodetector with Integrated Photon Multiplication

InP-based Waveguide Photodetector with Integrated Photon Multiplication InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,

More information

Session 2: Silicon and Carbon Photonics (11:00 11:30, Huxley LT311)

Session 2: Silicon and Carbon Photonics (11:00 11:30, Huxley LT311) Session 2: Silicon and Carbon Photonics (11:00 11:30, Huxley LT311) (invited) Formation and control of silicon nanocrystals by ion-beams for photonic applications M Halsall The University of Manchester,

More information

Realization of Polarization-Insensitive Optical Polymer Waveguide Devices

Realization of Polarization-Insensitive Optical Polymer Waveguide Devices 644 Realization of Polarization-Insensitive Optical Polymer Waveguide Devices Kin Seng Chiang,* Sin Yip Cheng, Hau Ping Chan, Qing Liu, Kar Pong Lor, and Chi Kin Chow Department of Electronic Engineering,

More information

Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures

Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures Chen Wang and Zhi-Yuan Li Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,

More information

Two bit optical analog-to-digital converter based on photonic crystals

Two bit optical analog-to-digital converter based on photonic crystals Two bit optical analog-to-digital converter based on photonic crystals Binglin Miao, Caihua Chen, Ahmed Sharkway, Shouyuan Shi, and Dennis W. Prather University of Delaware, Newark, Delaware 976 binglin@udel.edu

More information

SILICON BASED PHOTONIC CRYSTAL LIGHT SOURCES

SILICON BASED PHOTONIC CRYSTAL LIGHT SOURCES SILICON BASED PHOTONIC CRYSTAL LIGHT SOURCES A DISSERTATION SUBMITTED TO THE DEPARTMENT OF ELECTRICAL ENGINEERING AND THE COMMITTEE ON GRADUATE STUDIES OF STANFORD UNIVERSITY IN PARTIAL FULFILLMENT OF

More information

High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide

High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide [ APPLIED PHYSICS LETTERS ] High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide Dazeng Feng, Shirong Liao, Roshanak Shafiiha. etc Contents 1. Introduction

More information

Index. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index.

Index. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index. absorption, 69 active tuning, 234 alignment, 394 396 apodization, 164 applications, 7 automated optical probe station, 389 397 avalanche detector, 268 back reflection, 164 band structures, 30 bandwidth

More information

Silicon Photonic Device Based on Bragg Grating Waveguide

Silicon Photonic Device Based on Bragg Grating Waveguide Silicon Photonic Device Based on Bragg Grating Waveguide Hwee-Gee Teo, 1 Ming-Bin Yu, 1 Guo-Qiang Lo, 1 Kazuhiro Goi, 2 Ken Sakuma, 2 Kensuke Ogawa, 2 Ning Guan, 2 and Yong-Tsong Tan 2 Silicon photonics

More information

RECENTLY, using near-field scanning optical

RECENTLY, using near-field scanning optical 1 2 1 2 Theoretical and Experimental Study of Near-Field Beam Properties of High Power Laser Diodes W. D. Herzog, G. Ulu, B. B. Goldberg, and G. H. Vander Rhodes, M. S. Ünlü L. Brovelli, C. Harder Abstract

More information

Title. Author(s)Fujisawa, Takeshi; Koshiba, Masanori. CitationOptics Letters, 31(1): Issue Date Doc URL. Rights. Type.

Title. Author(s)Fujisawa, Takeshi; Koshiba, Masanori. CitationOptics Letters, 31(1): Issue Date Doc URL. Rights. Type. Title Polarization-independent optical directional coupler Author(s)Fujisawa, Takeshi; Koshiba, Masanori CitationOptics Letters, 31(1): 56-58 Issue Date 2006 Doc URL http://hdl.handle.net/2115/948 Rights

More information

Photonic crystal lasers in InGaAsP on a SiO 2 /Si substrate and its thermal impedance

Photonic crystal lasers in InGaAsP on a SiO 2 /Si substrate and its thermal impedance Photonic crystal lasers in InGaAsP on a SiO 2 /Si substrate and its thermal impedance M. H. Shih, Adam Mock, M. Bagheri, N.-K. Suh, S. Farrell, S.-J. Choi, J. D. O Brien, and P. D. Dapkus Department of

More information

Multi-wavelength laser generation with Bismuthbased Erbium-doped fiber

Multi-wavelength laser generation with Bismuthbased Erbium-doped fiber Multi-wavelength laser generation with Bismuthbased Erbium-doped fiber H. Ahmad 1, S. Shahi 1 and S. W. Harun 1,2* 1 Photonics Research Center, University of Malaya, 50603 Kuala Lumpur, Malaysia 2 Department

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Transfer printing stacked nanomembrane lasers on silicon Hongjun Yang 1,3, Deyin Zhao 1, Santhad Chuwongin 1, Jung-Hun Seo 2, Weiquan Yang 1, Yichen Shuai 1, Jesper Berggren 4, Mattias Hammar 4, Zhenqiang

More information

Tunable Color Filters Based on Metal-Insulator-Metal Resonators

Tunable Color Filters Based on Metal-Insulator-Metal Resonators Chapter 6 Tunable Color Filters Based on Metal-Insulator-Metal Resonators 6.1 Introduction In this chapter, we discuss the culmination of Chapters 3, 4, and 5. We report a method for filtering white light

More information

Applications of Steady-state Multichannel Spectroscopy in the Visible and NIR Spectral Region

Applications of Steady-state Multichannel Spectroscopy in the Visible and NIR Spectral Region Feature Article JY Division I nformation Optical Spectroscopy Applications of Steady-state Multichannel Spectroscopy in the Visible and NIR Spectral Region Raymond Pini, Salvatore Atzeni Abstract Multichannel

More information

Engineering the light propagating features through the two-dimensional coupled-cavity photonic crystal waveguides

Engineering the light propagating features through the two-dimensional coupled-cavity photonic crystal waveguides Engineering the light propagating features through the two-dimensional coupled-cavity photonic crystal waveguides Feng Shuai( ) and Wang Yi-Quan( ) School of Science, Minzu University of China, Bejiing

More information

Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback

Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback Song, B.; Kojima, K.; Pina, S.; Koike-Akino, T.; Wang, B.;

More information

Application Instruction 002. Superluminescent Light Emitting Diodes: Device Fundamentals and Reliability

Application Instruction 002. Superluminescent Light Emitting Diodes: Device Fundamentals and Reliability I. Introduction II. III. IV. SLED Fundamentals SLED Temperature Performance SLED and Optical Feedback V. Operation Stability, Reliability and Life VI. Summary InPhenix, Inc., 25 N. Mines Road, Livermore,

More information

Slow-light Enhanced Nonlinear Optics in Silicon Photonic Crystal Waveguides

Slow-light Enhanced Nonlinear Optics in Silicon Photonic Crystal Waveguides PIERS ONLINE, VOL. 6, NO. 3, 2010 273 Slow-light Enhanced Nonlinear Optics in Silicon Photonic Crystal Waveguides D. J. Moss 1, B. Corcoran 1, C. Monat 1, C. Grillet 1, T. P. White 2, L. O Faolain 2, T.

More information

High-efficiency, high-speed VCSELs with deep oxidation layers

High-efficiency, high-speed VCSELs with deep oxidation layers Manuscript for Review High-efficiency, high-speed VCSELs with deep oxidation layers Journal: Manuscript ID: Manuscript Type: Date Submitted by the Author: Complete List of Authors: Keywords: Electronics

More information

Surface-Emitting Single-Mode Quantum Cascade Lasers

Surface-Emitting Single-Mode Quantum Cascade Lasers Surface-Emitting Single-Mode Quantum Cascade Lasers M. Austerer, C. Pflügl, W. Schrenk, S. Golka, G. Strasser Zentrum für Mikro- und Nanostrukturen, Technische Universität Wien, Floragasse 7, A-1040 Wien

More information

64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array

64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated

More information

Robert G. Hunsperger. Integrated Optics. Theory and Technology. Sixth Edition. 4ü Spri rineer g<

Robert G. Hunsperger. Integrated Optics. Theory and Technology. Sixth Edition. 4ü Spri rineer g< Robert G. Hunsperger Integrated Optics Theory and Technology Sixth Edition 4ü Spri rineer g< 1 Introduction 1 1.1 Advantages of Integrated Optics 2 1.1.1 Comparison of Optical Fibers with Other Interconnectors

More information

On-chip interrogation of a silicon-on-insulator microring resonator based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer

On-chip interrogation of a silicon-on-insulator microring resonator based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer On-chip interrogation of a silicon-on-insulator microring resonator based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer Nebiyu A. Yebo* a, Wim Bogaerts, Zeger Hens b,roel Baets

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Supplementary Information S1. Theory of TPQI in a lossy directional coupler Following Barnett, et al. [24], we start with the probability of detecting one photon in each output of a lossy, symmetric beam

More information

Nanowires for Quantum Optics

Nanowires for Quantum Optics Nanowires for Quantum Optics N. Akopian 1, E. Bakkers 1, J.C. Harmand 2, R. Heeres 1, M. v Kouwen 1, G. Patriarche 2, M. E. Reimer 1, M. v Weert 1, L. Kouwenhoven 1, V. Zwiller 1 1 Quantum Transport, Kavli

More information

Design, Fabrication and Characterization of Very Small Aperture Lasers

Design, Fabrication and Characterization of Very Small Aperture Lasers 372 Progress In Electromagnetics Research Symposium 2005, Hangzhou, China, August 22-26 Design, Fabrication and Characterization of Very Small Aperture Lasers Jiying Xu, Jia Wang, and Qian Tian Tsinghua

More information

Monolithically integrated InGaAs nanowires on 3D. structured silicon-on-insulator as a new platform for. full optical links

Monolithically integrated InGaAs nanowires on 3D. structured silicon-on-insulator as a new platform for. full optical links Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links Hyunseok Kim 1, Alan C. Farrell 1, Pradeep Senanayake 1, Wook-Jae Lee 1,* & Diana.

More information

3550 Aberdeen Ave SE, Kirtland AFB, NM 87117, USA ABSTRACT 1. INTRODUCTION

3550 Aberdeen Ave SE, Kirtland AFB, NM 87117, USA ABSTRACT 1. INTRODUCTION Beam Combination of Multiple Vertical External Cavity Surface Emitting Lasers via Volume Bragg Gratings Chunte A. Lu* a, William P. Roach a, Genesh Balakrishnan b, Alexander R. Albrecht b, Jerome V. Moloney

More information

Graphene electro-optic modulator with 30 GHz bandwidth

Graphene electro-optic modulator with 30 GHz bandwidth Graphene electro-optic modulator with 30 GHz bandwidth Christopher T. Phare 1, Yoon-Ho Daniel Lee 1, Jaime Cardenas 1, and Michal Lipson 1,2,* 1School of Electrical and Computer Engineering, Cornell University,

More information

A Semiconductor Under Insulator Technology in Indium Phosphide

A Semiconductor Under Insulator Technology in Indium Phosphide A Semiconductor Under Insulator Technology in Indium Phosphide K. Mnaymneh, 1,2,3 D. Dalacu, 2 S. Frédérick, 2 J. Lapointe, 2 P. J. Poole, 2 and R. L. Williams 2,3 1 Department of Electrical and Computer

More information

Si-EPIC Workshop: Silicon Nanophotonics Fabrication Directional Couplers

Si-EPIC Workshop: Silicon Nanophotonics Fabrication Directional Couplers Si-EPIC Workshop: Silicon Nanophotonics Fabrication Directional Couplers June 26, 2012 Dr. Lukas Chrostowski Directional Couplers Eigenmode solver approach Objectives Model the power coupling in a directional

More information

R. J. Jones Optical Sciences OPTI 511L Fall 2017

R. J. Jones Optical Sciences OPTI 511L Fall 2017 R. J. Jones Optical Sciences OPTI 511L Fall 2017 Semiconductor Lasers (2 weeks) Semiconductor (diode) lasers are by far the most widely used lasers today. Their small size and properties of the light output

More information

An electrically pumped germanium laser

An electrically pumped germanium laser An electrically pumped germanium laser The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published Publisher Camacho-Aguilera,

More information

Wavelength tracking with thermally controlled silicon resonators

Wavelength tracking with thermally controlled silicon resonators Wavelength tracking with thermally controlled silicon resonators Ciyuan Qiu, Jie Shu, Zheng Li Xuezhi Zhang, and Qianfan Xu* Department of Electrical and Computer Engineering, Rice University, Houston,

More information

Devices Imaged with Near-eld Scanning Optical Microscopy. G. H. Vander Rhodes, M. S. Unlu, and B. B. Goldberg. J. M. Pomeroy

Devices Imaged with Near-eld Scanning Optical Microscopy. G. H. Vander Rhodes, M. S. Unlu, and B. B. Goldberg. J. M. Pomeroy Internal Spatial Modes of One Dimensional Photonic Band Gap Devices Imaged with Near-eld Scanning Optical Microscopy G. H. Vander Rhodes, M. S. Unlu, and B. B. Goldberg Departments of Physics and Electrical

More information

Characteristics of point-focus Simultaneous Spatial and temporal Focusing (SSTF) as a two-photon excited fluorescence microscopy

Characteristics of point-focus Simultaneous Spatial and temporal Focusing (SSTF) as a two-photon excited fluorescence microscopy Characteristics of point-focus Simultaneous Spatial and temporal Focusing (SSTF) as a two-photon excited fluorescence microscopy Qiyuan Song (M2) and Aoi Nakamura (B4) Abstracts: We theoretically and experimentally

More information

Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS

Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS Diode Laser Characteristics I. BACKGROUND Beginning in the mid 1960 s, before the development of semiconductor diode lasers, physicists mostly

More information

Deliverable Report. Deliverable No: D2.9 Deliverable Title: OAM waveguide transmission

Deliverable Report. Deliverable No: D2.9 Deliverable Title: OAM waveguide transmission Deliverable Report Deliverable No: D2.9 Deliverable Title: OAM waveguide transmission Grant Agreement number: 255914 Project acronym: PHORBITECH Project title: A Toolbox for Photon Orbital Angular Momentum

More information

DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M.

DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M. DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M. Published in: Proceedings of the 20th Annual Symposium of the IEEE Photonics

More information

Waveguide-based single-pixel up-conversion infrared spectrometer

Waveguide-based single-pixel up-conversion infrared spectrometer Waveguide-based single-pixel up-conversion infrared spectrometer Qiang Zhang 1,2, Carsten Langrock 1, M. M. Fejer 1, Yoshihisa Yamamoto 1,2 1. Edward L. Ginzton Laboratory, Stanford University, Stanford,

More information

CONTROLLABLE WAVELENGTH CHANNELS FOR MULTIWAVELENGTH BRILLOUIN BISMUTH/ERBIUM BAS-ED FIBER LASER

CONTROLLABLE WAVELENGTH CHANNELS FOR MULTIWAVELENGTH BRILLOUIN BISMUTH/ERBIUM BAS-ED FIBER LASER Progress In Electromagnetics Research Letters, Vol. 9, 9 18, 29 CONTROLLABLE WAVELENGTH CHANNELS FOR MULTIWAVELENGTH BRILLOUIN BISMUTH/ERBIUM BAS-ED FIBER LASER H. Ahmad, M. Z. Zulkifli, S. F. Norizan,

More information

UC Santa Barbara UC Santa Barbara Previously Published Works

UC Santa Barbara UC Santa Barbara Previously Published Works UC Santa Barbara UC Santa Barbara Previously Published Works Title Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides Permalink https://escholarship.org/uc/item/959523wq

More information

THE strong light confinement in high index-contrast structures

THE strong light confinement in high index-contrast structures 1682 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 9, SEPTEMBER 1999 High-Density Integrated Optics C. Manolatou, Steven G. Johnson, Shanhui Fan, Pierre R. Villeneuve, H. A. Haus, and J. D. Joannopoulos

More information

Distribution Unlimited

Distribution Unlimited REPORT DOCUMENTATION PAGE AFRL-SR-AR-TR_05_ Public reporting burden for this collection of information is estimated to average 1 hour per response, including I gathering and maintaining the data needed,

More information

Examination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:

Examination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade: Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on

More information

160MER, Austin, TX-78758, USA ABSTRACT 1. INTRODUCTION

160MER, Austin, TX-78758, USA ABSTRACT 1. INTRODUCTION Group velocity independent coupling into slow light photonic crystal waveguide on silicon nanophotonic integrated circuits Che-Yun Lin* a, Xiaolong Wang a, Swapnajit Chakravarty b, Wei-Cheng Lai a, Beom

More information

Lecture 4 INTEGRATED PHOTONICS

Lecture 4 INTEGRATED PHOTONICS Lecture 4 INTEGRATED PHOTONICS What is photonics? Photonic applications use the photon in the same way that electronic applications use the electron. Devices that run on light have a number of advantages

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2015.137 Controlled steering of Cherenkov surface plasmon wakes with a one-dimensional metamaterial Patrice Genevet *, Daniel Wintz *, Antonio Ambrosio *, Alan

More information

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging Christophe Kopp, St ephane Bernab e, Badhise Ben Bakir,

More information

Hybrid vertical-cavity laser integration on silicon

Hybrid vertical-cavity laser integration on silicon Invited Paper Hybrid vertical-cavity laser integration on Emanuel P. Haglund* a, Sulakshna Kumari b,c, Johan S. Gustavsson a, Erik Haglund a, Gunther Roelkens b,c, Roel G. Baets b,c, and Anders Larsson

More information

High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh, C. Panja, P.T. Rudy, T. Stakelon and J.E.

High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh, C. Panja, P.T. Rudy, T. Stakelon and J.E. QPC Lasers, Inc. 2007 SPIE Photonics West Paper: Mon Jan 22, 2007, 1:20 pm, LASE Conference 6456, Session 3 High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh,

More information

Characterization of a 3-D Photonic Crystal Structure Using Port and S- Parameter Analysis

Characterization of a 3-D Photonic Crystal Structure Using Port and S- Parameter Analysis Characterization of a 3-D Photonic Crystal Structure Using Port and S- Parameter Analysis M. Dong* 1, M. Tomes 1, M. Eichenfield 2, M. Jarrahi 1, T. Carmon 1 1 University of Michigan, Ann Arbor, MI, USA

More information

Nonuniform output characteristics of laser diode with wet-etched spot-size converter

Nonuniform output characteristics of laser diode with wet-etched spot-size converter Nonuniform output characteristics of laser diode with wet-etched spot-size converter Joong-Seon Choe, Yong-Hwan Kwon, Sung-Bock Kim, and Jung Jin Ju Electronics and Telecommunications Research Institute,

More information