Job advertisement. Organisation/Company: Location: Research Field: Requirements 1 :

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1 We are one of the youngest universities in Germany and have a fresh way of looking at things. We think in terms of unlimited possibilities instead of possible limitations. Located in the heart of the Ruhr metropolis, we have 11 faculties working to develop ideas with a future. We are strong on research and teaching, embrace diversity, promote academic potential and fight for genuine educational equality. Job advertisement PhD position available at University Duisburg-Essen within an Innovative Doctoral Training Network on Terahertz Technologies [TeraApps] Organisation/Company: University of Duisburg-Essen, Faculty of Engineering/ Electrical Engineering, Department of Solid-State Electronics, Duisburg, Germany Location: Duisburg, Germany Research Field: Ultra-High Frequency Measurement Techniques, Semiconductor Technology Horizon research and innovation framework programme: H2020 Marie Skłodowska-Curie Actions, Grant Agreement No TeraApps is a Marie Skłodowska-Curie Curie innovative training network (ITN) that researches in terahertz (THz) radiation, with frequencies between 0.3 THz and 3 THz. The project will focus on the applications of THz frequencies in imaging, communication and localization. In 10 leading European research labs at Universities and in the industry mobile and compact THz components will be developed and tested. TeraApps will acquire a unique multidisciplinary skill set and will be uniquely placed to support these activities in academia and industry within their future careers, giving them a competitive advantage and creating a project legacy. (-> see attachment) The TeraApps researchers at Solid-State Electronics Department shall: develop highly energy-efficient sub millimetre-wave detector and emitter characterize III/V tunnelling diodes by on-wafer vector network analysis develop resonant tunnelling diodes and On-Chip antennas actively contribute to the coordinated and collaborative TeraApps research programme Requirements 1 : the candidates are within the first four years (full-time equivalent research experience) of their research career and have no doctoral degree at the time of recruitment by the host organization. Full-Time Equivalent Research Experience is measured from the date when the researcher obtained the degree entitling him/her to embark on a doctorate (either in the country in which the degree was obtained or in the country in which the researcher is recruited, even if a doctorate was never started or envisaged). However, full time spent on non-research related activities may be discounted, where each case is evaluated on its own merit. At the time of recruitment by the host organization, the candidate must not have resided or carried out his/her main activity (work, studies, etc.) in the country of the host organization for more than 12 months in the 3 years immediately prior to the reference date. Short stays such as holidays and/or compulsory national service are not taken into account. 1

2 We are one of the youngest universities in Germany and have a fresh way of looking at things. We think in terms of unlimited possibilities instead of possible limitations. Located in the heart of the Ruhr metropolis, we have 11 faculties working to develop ideas with a future. We are strong on research and teaching, embrace diversity, promote academic potential and fight for genuine educational equality. Prior to starting your position, the candidate must have completed the courses that are required to enrol in a doctorate program either in the country where the candidate is studying or in the country offering the position. Master Degree or equivalent in Electrical and Electronics Engineering, Nano Engineering or Physics is necessary. An excellent academic record in microelectronic device science, nano science, physics, or related areas, with a solid academic background in semiconductor physics is essential. Experimental skills in high-frequency measurements are required, knowledge in the field of semiconductor technology are eligible. Good knowledge of English language is postulated; a strong commitment to learn German language is expected. Additional comments The work will be carried out in close collaboration of the two departments Solid-State Electronics (III/V semiconductor technology, and General and Theoretical Electrical Engineering (computational electromagnetics, Type of Contract Temporary for 36 months, full-time, Salary: 3, per month (living and mobility allowance, German correction coefficient already applied) plus an additional 250 per month (family allowance) depending on personal circumstance including employer s and employee s social service contributions. Income is subject to national tax requirements. Funding for travel, secondment, and training is available. Further graduation will be supported! Start of Employment 02/01/2018 Application deadline November 30 th, :00 - Europe/Duisburg The University of Duisburg-Essen aims to increase the diversity of its members (please see It is seeking to increase the number of women on its scientific staff and therefore strongly encourages suitably qualified women to apply. In case of equal qualification, women will be given preference in accordance with state equal opportunity legislation. Applications from suitable disabled persons and equivalent applicants according to Article 2, Para-graph 3 of the social code (SGB IX) are also welcome. Along with your application and CV, please send the names of at least two persons for references including their phone number and address. Write in the subject of your application "ESR Marie Skłodowska-Curie - TeraApps" and mail it to the following address: Werner.Prost@uni-due.de

3 Terahertz Technologies for Imaging, Radar, and Communication (TeraApps) A European team of 15 young researchers will develop semiconductor-based terahertz technologies two of them at the University Duisburg-Essen Research into terahertz (THz) radiation, with frequencies between 0.3 THz and 3 THz, has burgeoned in the last decade. The interest has been stimulated by the unique properties of THz waves: they offer wider bandwidths, i. e. higher data rates, and improved spatial resolution compared with RF (radio frequency) electronics and they can penetrate materials such as plastics, paper and many organic compounds, including human tissue, without the hazards or potential dangers associated with ionising radiation such as X-rays. Furthermore, THz may be used to identify specific materials via their characteristic spectra, including explosives, hazardous chemicals, drugs and DNA, as molecular rotations and vibrations occur in this frequency range. TerraApps will focus on the applications of THz frequencies in imaging, communication and localization. The project will be coordinated by Edward Wasige from the University of Glasgow. In 10 leading European research labs at Universities and in the industry mobile and compact THz components will be developed and tested. Today, there is a distinct lack of sources in this frequency range that are compact, robust, efficient and low cost, i.e. all solid-state sources, and that operate at room temperature with output powers >1 mw. Compact and highly sensitive detectors are also desirable. To this end, resonant tunnelling diodes (RTDs) have recently been shown to have the potential to realise such components. RTD technology is also expected to significantly impact the RF signal and potentially energy harvesting (zero power electronics) through its zero bias rectification capability. The TerraApps researchers at Solid-State Electronics Department and the Department of General and Theoretical Electrical Engineering will develop novel fundamental mode RTD oscillator/antenna at around 300 GHz with phase control using a sub-harmonic injection locking technique. The proof of concept at microwave frequencies is depicted in fig. 1. a b Figure 1. Triple-barrier RTD oscillator/detector: (a) I-V characteristic with negative differential resistance at forward bias and high non-linearity for signal detection at V = 0, (b) schematic description of the monolithically integegrated oscillator (V > 0) and Detector (V = 0).

4 Within TerraApps the injection signal shall be provided by an underlying commercial oscillator in the V or W band via antenna-antenna coupling, whereas the synchronized sub-mm/thz signal is then emitted from the corresponding element in the top dual band antenna system. This approach promises demonstration of beam steering, phased array emission and MIMO (multiple-input multiple-output) systems at THz frequencies for the first time. Besides circuit simulation with ADS, efficient finite-difference time-domain simulation (FDTD, EMPIRE XPU, inhouse tool openems) will be utilized to design and optimize the two-port and dualresonant antenna system. This research is embedded in the great collaborative research center SFB/TRR 196 on Mobile Material characterization and Localization by Electromagnetic Sensing [ that provides an ideal scientific background in Duisburg for the research of the European Doctoral Training Network TeraApps. Solid State Electronics Department: The classical RTD structure consists of a small band gap semiconductor quantum well sandwiched between thin wide band gap barriers. A recent and very promising development is the extension of the classical two-barrier RTD design to triple barriers (TB-RTD). If the second well is different in depth and/or thickness a strong non-linearity in the IV-characteristic is obtained at zero bias (Fig. 2a). For positive biasing of the device the behaviour is identical to the typical RTD behaviour exhibiting negative differential resistance. At zero bias, the non-linearity is ideally suited for RF detection. By integrating triple barriers RTD into on-chip antenna structure a combined oscillator and signal detector may be formed (Fig. 1a). Zero bias to detector operation is demonstrated in Fig. 2b at microwave frequencies and shall be extended to millimetre and sub-millimetre frequencies in TerraApps. Figure 2. Experimenteal frequency dependent zero-bias signal signal detection for triple-barrier RTD/slot antenna. [1] [1] Khaled Arzi, Gregor Keller, Andreas Rennings, Daniel Erni, Franz-Josef Tegude, and Werner Prost; Frequency locking of a free running resonant tunneling diode oscillator by wire-less subharmonic injection locking; 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), DOI: /UCMMT

5 TeraApps Project Partners University of Glasgow (UK), Edward Wasige: III-V material growth; Terahertz (THz) sources; THz imaging systems; Consortium coordination Julius Maximilians Universität Würzburg (D), Sven Höfling: III-V material growth; Optoelectronic devices and detectors Universität Duisburg-Essen (D), Daniel Erni, Andreas Rennings:EM modelling Werner Prost, Nils Weimann: III-V material growth; THz sources and detectors Universidade do Algarve (PT), José Figueiredo: THz Opto-electronic devices and circuits National Physical Laboratory (UK), Mira Naftaly: THz non-destructive testing (NDT) systems; THz imaging systems Universitat Autònoma de Barcelona (ES), Xavier Oriols Pladevall: Physics based simulation of THz quantum devices Universite de Montpellier (FR), Luca Varani: THz detectors and biosensors; THz imaging and test platforms Technische Universität Wien (AT), Michael Feiginov: THz sources; Device physics CNR- Nanoscience Institute (IT), Miriam Vitiello: THz detectors; THz photonics Keysight Technologies Belgium BVBA (BE), Michael Dieudonne: THz Metrology