Resonant tunneling diode optoelectronic integrated circuits

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1 Invited Paper Resonant tunneling diode optoelectronic integrated circuits C. N. Ironside a, J. M. L. Figueiredo b, B. Romeira b,t. J. Slight a, L. Wang a and E. Wasige a, a Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom b Centro de Electrónica, Optoelectrónica e Telecomunicações, Universidade do Algarve, Campus de Gambelas, Faro, Portugal ABSTRACT We present a review of Resonant Tunneling Diode (RTD) OptoElectronic Integrated Circuits (OEICs). Resonant tunneling diodes (RTDs) can be relatively easily integrated on the same chip as optoelectronic components and in this paper we discuss the integration of RTDs with laser diodes, electroabsorption modulators and photodiodes. The RTD provides the OEIC with negative differential resistance over a wide bandwidth. RTDs are highly nonlinear devices and by applying nonlinear dynamics we have recently gained considerable insight into the operation of the RTD OEICS and that has allowed us to design, fabricate and characterize OEICs for wireless/photonic interfaces. Keywords: Optoelectronics, Semiconductor laser, Optoelectronic integrated circuit, photodetector, modulator 1. INTRODUCTION Currently, in many optoelectronic systems the optoelectronic chip is made from an epilayered, heterostructured III-V semiconductor and the purely electronic part of the system is made from silicon. With optoelectronic integrated circuits (OEICs) the aim is to integrate some of the electronic functionality onto the III-V semiconductor chip thus reap the benefits of monolithic integration and produce compact, robust, reliable, low power and low cost systems. In the emerging mass markets of fibre to the home and ubiquitous high bandwidth wireless access then all the benefits integration will be important, particularly low power and cost. In this paper we report on a resonant tunneling diode (RTD) OEIC technology that fits well with epilayered, heterostructured III-V semiconductors and provides high bandwidth electronic gain through the negative differential resistance (NDR) of the resonant tunneling diode [1]. We survey the recent progress with RTD-OEICs and cover some of the devices that have been fabricated including the RTD laser diode (RTD-LD), the RTD electroabsorption modulator (RTD-EAM) and RTD photodiode (RTD-PD). We will also cover the application of nonlinear dynamical theory to RTDs-OEICs. RTDs have highly nonlinear electrical characteristics and although this provides a lot of wide bandwidth electrical gain it makes the devices difficult to control and utilize. We have gained considerable insight into the operation of the RTD-OEICs by applying classic nonlinear dynamics theory [2] and in addition to being an excellent test bed for many of the nonlinear dynamics concepts such synchronization and chaos, this theory has allowed us to explore new applications of the RTD-OEICs that include wireless/optical interface chips and synchronized chaos encryption. 1.1 Resonant Tunneling Diodes In this section the epilayer structure of the RTD is described and in outline, the physics fundamental to the highly nonlinear electrical characteristics of the Resonant Tunnelling Diode is explained. Mostly because of the direct bandgap nature of most of the III-V semiconductors many optoelectronic devices are made from III-V semiconductors. As growth technology evolved and improved it was realized in the 1980s that for optoelectronic devices a variety favorable quantum effects could be engineered by using epilayers less than around 10nm or so. So called quantum wells were employed in lasers and modulators, primarily because of their favorable optical properties and around the same time it was realized that quantum wells also had interesting electrical properties and that by simply using thin barrier layers Quantum Sensing and Nanophotonic Devices VII, edited by Manijeh Razeghi, Rengarajan Sudharsanan, Gail J. Brown, Proc. of SPIE Vol. 7608, 76080I 2010 SPIE CCC code: X/10/$18 doi: / Proc. of SPIE Vol I-1

2 (<2nm) the effects of quantum tunneling could be observed as in the RTD. Typically an RTD consists of two barriers layers of a wide bandgap III-V semiconductor for example AlAs with a thickness less than 2nm with a lower bandgap material sandwiched in between for example InGaAs with a thickness less than 10nm. Figure 1 Shows the typical structure of AlAs/InGaAs double barrier resonant tunneling diode also illustrated is the bottom of the conduction band energy as a function of distance. Note the total width of the device is 10nm. At less than 2nm the barriers are thin enough that electrons can tunnel through them into and out of the quantum well. The structure is often compared to a Fabry-Perot optical interferometer. The two barriers play the role of partially transparent mirrors through which the light is coupled into and out of a resonant structure. So as we might expect the transmission of electrons through the structure shows resonant peaks. At the resonant state energies transmission through the structure approaches 100%. The concept is illustrated in figure(2) Figure 2. On the left the figure shows the energy diagram of the RTD and the resonant state energies on the right is the transmission probability of a the RTD (solid line) and for comparison is the transmission probability of a single barrier (dotted line). The resonant state gives rise to the negative differential resistance (NDR). As the bias voltage across the device is increased the bottom of the conduction band in the layer on top of the first barrier comes into alignment with the energy of the first (lowest energy) resonant state. Most of the electrons in the layer above the first barrier have energies close to the bottom of the conduction so these electrons are now able to tunnel through the RTD structure and the current reaches a maximum. If the voltage is further increased then the number of electrons in the layer above the barrier with energies aligned with the resonance state drops and the current deceases as the voltage increases the definition of negative resistance. The concept is illustrated in figure (3). Proc. of SPIE Vol I-2

3 Figure 3. On the left the figure shows the energy diagrams of the RTD under bias and on the right there is the resultant current voltage curve of the RTD. The bias conditions (i) zero bias (ii) resonance (iii) off resonance are shown in both parts of the figure. Fundamentally tunneling through the quantum well is a very fast process however other considerations such parasitic components and the capacitance of the device generally limit the speed, nonetheless oscillators with frequencies over 800GHz have be made from RTDs [3] making them the highest speed purely electronic device. 2. THE RESONANT TUNNELLING DIODE LASER DIODE (RTD-LD) 2.1 Integrated RTD-LD circuits The RTD can be easily integrated with a semiconductor laser diode [4] in a vertical stack arrangement as illustrated in Figure(4) (a) which shows the integrated RTD-LD Figure 4. (a) Schematic of the integrated resonant tunneling diode laser diode (RTD-LD) device note the RTD consists of 2 AlAs barriers each 2nm thick and 6nm InGaAs quantum well a total of 10nm. (b) shows the optical output power on a log scale as a function of voltage across the device; the device emitted in the 1550nm optical communications window The RTD uses the same material as the optical communications laser and, except for the 2nm AlAs barrier layers, all the layers are lattice matched to the InP substrate. The AlAs layers are used to provide larger barrier height and are thin enough that their lattice mismatch does not matter. Unusually for a laser diode, the RTD-LD has the n-type material as the top layers because typically RTDs use conduction band electrons rather than holes for their operation and require a mesa structure to confine the current. So the ridge on the top of the device serves several purposes it confines the light in the lateral direction and it confines the current through the RTD and laser. Figure 4(b) shows the light voltage curve of the RTD-LD. The device exhibits bistable hysteresis operation and only a small voltage is required to make the device flip between states this feature could be useful in an optical communication system that employs non-return to zero (NRZ) modulation. Proc. of SPIE Vol I-3

4 2.2 Hybrid RTD-LD oscillator circuits The RTD-LD operation depends on the external circuit configuration and in general the full potential of the RTD-OEICs can only be exploited if a detailed understanding of the interaction between the RTD-OEIC and the external system is available. To investigate this interaction we separated the RTD and the LD to form a hybrid RTD-LD (two separate chips) and investigated various circuit configurations and component values. The importance of the bias circuit and the values of the external components and parasitics were investigated. Circuit analysis of the RTD-LD revealed that the monolithically integrated RTD-LD operated as a bistable switch because in series with the RTD-LD part of the chip there was a large series resistance (large than the negative resistance of the RTD) this may have been due to contact resistance. If the series resistance of the RTD-LD circuit is reduced oscillators can be made with interesting properties and applications. The RTD-LD oscillators were investigated using hybrid configurations. Figure 5 illustrates the hybrid RTD-LD oscillator. Figure 5. A schematic of the hybrid resonant tunneling diode laser diode (RTD-LD) oscillator Figure(6) illustrates the lumped element circuit used to represent the RTD-LD and a simplified version used to obtain good understanding of the RTD-LD. We have included the possibility of injecting a signal into the device at frequency fm. It turns out that for deep insight into its operation full nonlinear dynamical theory is very useful and figure 6(b) shows the simplified circuit used in the nonlinear analysis. F (V ) is used to represent the nonlinear current voltage behaviour of the RTD-LD circuit Figure 6. (a) The circuit layout diagram for the RTD-LD OEIC (b) The simplified circuit used to derive the operation of the RTD-LD In summary this injection locked oscillator can be represent by a Lienard s oscillator described by the following nonlinear second order differential equation. dv d 2V + H(V ) + G(V ) = Vac sin(2πf m t ) 2 dt dt Proc. of SPIE Vol I-4

5 where GV ()is a nonlinear force and HV () dv is the nonlinear damping factor. The Lienards oscillator is related to dt the more familiar Van der Pol oscillator the Van Der Pol is a subclass of the Lienards. The full Lienard s description has been successfully employed to describe the optoelectronic voltage controlled oscillator behaviour of the RTD-LD. Figure (7) shows the electrical and optical output from a RTD-LD operating as relaxation oscillator at around 600MHz. Figure 7 RTD-LD relaxation oscillation (a) electrical and (b) photo-detected optical output waveforms at around 600 MHz. The Lienards theory could be successfully employed to predict how the circuit tuned with applied dc voltage as illustrated in Figure(8) Figure 8 RTD-LD oscillation frequency versus applied dc voltage and the Lienard s model fit is also shown. In summary the hybrid RTD-LD acts as an optoelectronic voltage controlled oscillator that can be successfully characterized as a Lienard s oscillator. Proc. of SPIE Vol I-5

6 3. THE RESONANT TUNNELLING DIODE OPTICAL WAVEGUIDE (RTD-OW) A simple RTD-OEIC is the RTD-OW where a RTD is placed an optical waveguide. The nonlinear current voltage characteristics introduced by the RTD can be used to switch the electric field present in the optical waveguide and produce an electro-absorption effect or can be used to amplify a small photo-induced current in the optical waveguide. The first of these devices is the RTD electroabsorption modulator (RTD-EAM) [5] and the second is the RTD photo diode (RTD-PD). 3.1 The RTD-EAM Figure(9) show a schematic an RTD integrated with an optical waveguide and the layout of the chip. Figure 9. (a) the cross-section of the RTD-OW with the energy band diagram showing the bottom of the conduction band as a function of distance and the refractive index as a function of distance (b) the layout of the RTD-OW chip showing the RF planar waveguide and the optical input and output into the optical waveguide. And figure(10) shows the InP based version of the RTD-OW for operation in the 1550nm optical communications window. Figure 10. (a) the cross-section of the InGaAs/InAlAs lattice match to InP RTD-OW with the energy band diagram showing the bottom of the conduction band as a function of distance and the refractive index as a function of distance Figure (11) illustrates its operation as a RTD-EAM. As the device is switched between peak and valley there is a large change in the transmission through the optical waveguide for wavlengths close to the band-edge of the semiconductor in the waveguide core. This is because the electric field in the optical waveguide is switched from high to low and the electrical field alters the optical transmission via the Franz-Keldysh effect this effect is seen clearly in Figure 11(a). Figure 11(b) shows how the RTD acts as an amplifier for the applied modulation signal - also superimposed is the I-V characteristic of the RTD-OW. Proc. of SPIE Vol I-6

7 Figure 11. The RTD-EAM (a) InGaAlAs RTD-EAM transmission spectrum in the wavelength range 1500 nm to1580 nm, with the applied voltage as a parameter. (b) Modulator response as function of the dc bias voltage when driven by 3 GHz rf signals, with injected amplitude as a parameter. 3.2 The RTD-PD The operation of the RTD-OW as a photodetector (RTD-PD) is shown in Figure (12). Figure 12. (a) RTD-OW I-V characteristic and rf power produced due 1550 nm optical signals modulated at 1 GHz. (b) Rf power produced optical signals modulated at 1 GHz as function of wavelength, at DC biased on the peak and on the valley. The figure(12a) shows that when the RTD-PD is biased in the NDR region the photo induced signal is amplified by up to 45dB. Figure(12b) the wavelength dependence of the amplification. In summary, the RTD-OW OEIC can act a modulator or as a detector with built-in electrical gain. 4. APPLICATIONS 4.1 Wireless/optical interface High data rates mobile access networks are emerging as the primary choice for many communication systems users. The radio-over-fiber (RoF) systems are one of the promising schemes for the future broad-band wireless communication systems such as mobile communications, hotspots and suburban areas Compared with the conventional-frequency wireless or coaxial links, RoF systems show many advantages such as low-cost, high-performance, huge bandwidth, and long-distance transmission [6]. Such is the demand that so-called picocellular access with wireless cells of few meters Proc. of SPIE Vol I-7

8 range. The RTD-OEIC oscillator circuits can be employed in this application. The key concept is that a small injection signal can control the phase of an injection lock oscillator. The injection-locking of an electrical oscillator was first described by Van Der Pol and the first locking bandwidth equation for electrically injection-locked oscillators was developed by (Adler, 1946), with a model based on a vacuum tube transistor. Most of the characteristic and properties identified by the above authors can be observed with RTD-LD circuits which are much simpler oscillator configuration. When externally perturbed the RTD-LD circuit behaves as a non-autonomous oscillator, being a practical demonstration of nonlinear systems theory extensively developed over the last decades. Figure 13. (a) shows the layout of the wireless/optical interface experiment The phase modulated signal is broadcast from patch antenna and picked up by another patch antenna that directly injects the signal into the RTD-LD this is the wireless to optical part of the interface. Also illustrated is the optical to wireless part of the interface where optical injection into the RTD-OW act as a RTD-PD locks the oscillator. The injection locking behaviour of the RTD-LD is illustrated in figure (14) Figure 14. The injection locking of a RTD-LD (a) represents the narrowing of the spectrum on locking (b) shows the Arnold tongue at the fundamental frequency by plotting the amplitude of the injected signal (normalized against the width of the NDR region) against the frequency of the injected signal the black dots are experimental points and the shaded region is from the Lienards theory. (c) shows the sidebands on the sub-carrier of the of optical signal produced when the injected signal is phase modulated the 600MHz carrier has 1MHz phase modulation. Figure(14) shows how a phase modulated wireless signal can modulate the phase of the optical subcarrier output from the RTD-LD. The wireless signal is injected into the RTD-LD and it locks the oscillation as shown in figure 14(a) the characteristics of this locking is described by the Arnold tongue behaviour -a concept from nonlinear dynamics - as shown in figure 14(b). The phase of the injected signal is modulated and this in turn modulates the phase of the optical sub carrier output from the RTD-LD, figure 14(c). Proc. of SPIE Vol I-8

9 5. CONCLUSION Because the RTD consists of 3 epitaxial layers that have a combined thickness of typically 10nm, it is relatively simple to integrate with optoelectronic devices in a vertical stack and it provides wide bandwidth electronic gain. In this review we have covered various types of OEIC including the RTD-LD, RTD-EAM and RTD-PD and we have discussed one particular RTD-OEIC application the wireless/optical interface. Incorporating electronic functionality with optical devices on the same III-V semiconductor chip as shown to be feasible and useful it brings the benefits of monolithic integration to many optoelectronics applications. REFERENCES 1. Slight, T. J. and Ironside, C. N. Investigation into the Integration of a Resonant Tunneling Diode and an Optical Communications Laser: Model and Experiment, IEEE J. Quant. Elec. 43, 7, , Slight, T. J. Romeira, B. Wang, L. Figueiredo, J. M. L. Wasige, E. Ironside, C. N., A Lienard Oscillator Resonant Tunnelling Diode-Laser Diode Hybrid Integrated Circuit: Model and Experiment, IEEE J. Quantum Electron., Vol. 44, No. 12, pp , Suzuki, S., Teranishi A., Hinata, K., Asada M., Sugiyama H. and Yokoyama H., Fundamental Oscillations of up to 831 GHz in GaInAs/AlAs resonant tunneling diode Applied Physics Express Thomas Slight Jose Figueiredo Romeira, Bruno; Figueiredo, José; Slight, Thomas; Wang, Liquan; Wasige, Edward; Ironside, Charlie; Kelly, Anthony; Green, Richard; Nonlinear Dynamics of Resonant Tunneling Optoelectronic Circuits for Wireless/Optical Interfaces, IEEE J. Quant. Electron., 45 (11), Proc. of SPIE Vol I-9

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