Millimeter-Wave and Terahertz Antennas: from PCB to Silicon

Transcription

1 Millimeter-Wave and Terahertz Antennas: from PCB to Silicon Sanming Hu, Hongfu Meng, Wenbin Dou State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China 17 th Oct., APCAP2017, Xi an, China 毫米波国家重点实验室 State Key Lab. of Millimeter Waves 1/30

2 Copyright The use of this work is restricted solely for academic purposes. The author of this work owns the copyright and no reproduction in any form is permitted without written permission by the author. 2/30

3 Abstract Millimeter-wave (mmwave) and terahertz (THz) technologies enable a large number of exciting applications, such as space exploration, high-speed communication, self-driving, non-ionizing imaging. In these and other mmwave and THz systems, antennas play key roles since they significantly affect and even directly determine the system performance and cost. This talk presents five different antennas from PCB to Silicon, i.e., (1) 94GHz reflectarray in printed circuit board (PCB), (2) 135GHz silicon antenna fabricated by in-house BCB-Silicon process for mmwave 3DIC, (3) a horn antenna compatible with through-silicon via process for our proposed mmwave 3D SiP, (4) a substrateintegrated waveguide antenna in commercial SiGe BiCMOS process, it achieve full integration and frequency reconfigurablity from 397 to 428GHz, and (5) a 315GHz antenna to be inherently integrated with graphene detector in the same highresistivity silicon substrate. The above research partially reviews our effort in mmwave and THz antennas, and provides a reference for mmwave/thz antennas and systems. Keywords: Silicon antennas, PCB antenna, on-chip antennas, through-silicon via 3/30

4 Biography of 1st Author Sanming Hu received his Ph.D. degree in 2009 from Southeast University (SEU), Nanjing, China, where he is a Professor. From 2006 to 2009, he visited Nanyang Technological University, Singapore, for his doctoral research. From 2009 to 2015, he was a Senior Research Engineer, a Scientist I, and a Scientist II at the Institute of Microelectronics, A*STAR, Singapore, an Alexander von Humboldt Research Fellow at University of Ulm, Germany, and then an Assistant Professor at Heriot-Watt University, Edinburgh, UK. Dr. Hu is a Senior Member of IEEE and CIE. He served as a Guest Editor of SCI Journals. As the first author, he received the Best Paper Award of the IEEE Transaction on Components, Packaging, and Manufacturing Technology (2012). He was a recipient of the Recruitment Program of Global Experts Young Professionals, China (2015). 4/30

5 Outline Millimeter Waves and Terahertz mmwave/thz Antennas 1 94GHz Reflectarray Antennas 2 135GHz Antenna for 3D IC 3 135GHz Horn for 3D SiP 4 315GHz Dipole for Graphene Detector 5 400GHz SIW Antenna for SoC Summary 5/30

6 Millimeter Waves and Terahertz Supper High Frequency Millimeter-Wave Terahertz (THz) Electronics Infrared Visible Light Photonics Millimeter-Wave (mmwave or MMW) A wavelength-based term Wavelength = 1 ~ 10mm Frequency = 30 ~ 300GHz Terahertz (THz, sub-mmwave, far-infrared) A frequency-based term What is the Freq. Range of THz? Photonics: 0.1THz (100GHz) 10THz Electronics: 0.3THz (300GHz) 3THz Common: 0.3THz (300GHz) 10THz 6/30

7 mmwave and THz Applications 5G Communication Automotive Radar Space Application And More Google s 60GHz Project Soli P. D. Maagt, etc 7/30

8 94GHz Reflectarray Antenna Outer Loop R 2 Substrate Ground R 1 R 0 Inner Circle Reflect Element Element Sizes: 1.5mm 1.5mm Phase Shift: -1600~ /30

9 94GHz Reflectarray Antenna Reflect Aperture Sizes: 75mm 75mm Offset Angle: 26.5 Main Beam Direction: θ 0 = 0 9/30

10 94GHz Monopulse Reflectarray 10/30

11 94GHz Monopulse Reflectarray E-Plane H-Plane Differential Sum 11/30

12 mmwave 3D Integrated Circuits Source: S. Hu etc, IEEE Trans. CPMT 12/30

13 135GHz Antenna for 3D IC Source S. Hu etc, IEEE Trans. CPMT (Best Paper Award)) 13/30

14 S Parameters and Gain Gain (dbi) BCB (tanδ =0) + polymer (tanδ =0) + PEC BCB (tanδ =0) + polymer (tanδ =0) + Cu BCB (tanδ =0.01) + polymer (tanδ =0) + Cu BCB (tanδ =0.01) + polymer (tanδ =0.01) + Cu Frequency (GHz) 10-dB RL bandwidth: GHz (sim.); ~ GHz (meas.) Wide impedance bandwidth is achieved using two resonances BCB filling significantly benefit the silicon process, reduce the cavitity size by 76.8%, and remain the antenna gain 14/30

15 Measurement Measured Gain Simulated Gain Gain (dbi) Efficiency (%) 2 1 Simulated Efficiency Frequency (GHz) Simulated high efficiency around 86% Measured high gain (5.4 GHz) 15/30

16 Antenna for mmwave 3D SiP Horn antenna fed by a normal solder ball as a current probe Waveguide Radiator 3D Explored View Organic Substrate Horn antenna formed by normal solder balls Organic Substrate PCB Front-Side View Organic Substrate Printed Circuit Board Source: S. Hu etc, EuCAP Horizontal radiation to benefit applications such as chip-to-chip communication 16/30

17 Radiation Pattern It works as a typical SIW horn antenna 17/30

18 Antenna Gain Improvement Bigger ball, higher gain, available ball/ball height: 0.04~ 0.76 mm Proposed antenna has ~2.1dB higher gain than the best case of a horn filled by FR4 (tanδ=0.018 at 10 GHz). Proposed antenna has ~14dB higher gain than the best case of a horn filled by Silicon (ρ=100 Ω cm) 18/30

19 THz Graphene Detector A. Zak, etc. Nano Letters, L. Vicarelli, etc. Nature Materials, Oct Impedance (ohms) Expected and Reported Antenna for THz Imager Expected Several thousand (to perfectly match GFET. Exact value depends on GFET) Reported 50 or 188 Gain (dbi) Higher is better -10 ~ 0 Bandwidth Narrow (to reduce input noise) Wide A better antenna will significantly benefit a THz imager 19/30

20 315GHz Proposed Antenna Structure Reported antennas mainly use this top-side radiation, it is very weak due to high k of Silicon Flip the silicon chip on FR4 PCB, now we can use the strong radition Bended dipole is proposed to get high impedance & differential feeding Air (k=1) Silicon (k=11.9) Antenna Flip the chip Printed Circuit Board (PCB) GFET 20/30

21 Antenna Layout 0.6 mm 40 mm 0.6 mm S Graphene FET D Antenna G G D S Full Metal D Detector Chip D PCB_Top PCB_Bottom Frequency: 315 GHz Impedance: 5000 ohms Chip substrate: High-resistivity (10k) silicon Chip size: 600um x 600um x 525um PCB substrate: for supporting & biasing 21/30

22 3D Radiation Pattern High-resistivity (10k) Silicon works as a superstrate 22/30

23 2D Radiation Pattern High gain (9.47dBi vs -10~0 dbi for reported designs) 23/30

24 Antenna Input Impedance High impedance (5k ohms) to match GFET THz detector 24/30

25 Reflection Coefficient Narrow bandwidth (3.5 GHz) to reduce input noise 25/30

26 400GHz Reconfigurable SIW Antenna Sidewall (vias from TM2 layer to M1 layer) Radiation slot (TM2 layer) TM2 layer Ridge (M3 layer) Ground (M1 layer) Sidewall (vias from TM2 layer to M3 layer) Sidewall (vias from M3 layer to M1 layer) 3D view of SIW antenna Vias from TM2 layer to M1 layer Radiation slot (TM2 layer) V_Q1 (M1 layer) Q2 Q1 V_Q2 (M1 layer) Q1=0.12um x 0.84 um Q2=0.12um x 0.84 um Close-up of Q1 and Q2 connection TM2 TM1 M5 M4 M3 M2 M1 Metal layers Two transistors (Q1 and Q2) are employed as switches to control the physical length of the slot and therefore the operation frequency 26/30

27 Radiation Pattern Gain ( dbi ) o 126 o XoZ Plane YoZ Plane 180 Theta (degree) dbi Simulated antenna gain: -0.55dBi vs -7dBi (patch, JSSC2010) Close structure: alleviate the undesired surface-wave and electromagnetic interference to nearby active circuits 27/30

28 S Parameters of SIW Antenna 0-5 S11 (db), Gain (dbi) Q1 OFF, Q2 OFF: S11 Q1 OFF, Q2 OFF: Gain Q1 ON, Q2 OFF: S11 Q1 ON, Q2 OFF: Gain Q1 OFF, Q2 ON: S11 Q1 OFF, Q2 ON: Gain Frequency (GHz) Antenna gain: ~ -0.5dBi Impedance bandwidth: GHz, GHz, and GHz 28/30

29 THz Silicon Chip with SIW Antenna 400GHz Transmitter & Receiver Chipset Source: S. Hu etc, IEEE JSSC, pp /30

30 Summary for 3D SiP for System on PCB mmwave/thz Antennas for 3D IC for 2D Graphene Detector for SoC Thanks for Your Attention 30/30