TYPE INSULATED MAIN FUNCTION OUTLINE. Brake circuit RATING APPLICATION INTEGRATED. protection (UV), supply) fault (N-side. File E P1 (1)

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1 < DualInLine Package Intelligent Power Module > TRNSFER MOLDING OUTLINE MIN FUNCTION CIB(Converter + Inverter + Brake) type IPM 3phase Inverter Brake circuit 3phase Converter RTING Inverter part : 35/1200 (CSTBT) PPLICTION C400 three phase motor inverter drive INTEGRTED DRIE, PROTECTION ND SYSTEM CONTROL FUNCTIONS For Pside : Drive circuit, High voltage highspeed level shifting, Control supply undervoltage protection (U) without fault signal output Builtin discrete bootstrap diode chips with current limiting resistor For Nside : Drive circuit, Control supply undervoltage (SC) by detecting voltage of external shunt resistor protection (U), Short circuit protection Fault signaling : Corresponding to SC fault (Nside IGBT) and U fault (Nside supply) Temperature monitoring : Outputting LIC temperature by analog signal (No self over temperature protection) Input interface : 5 highh active logic For Brake : Drive circuit, Control supply undervoltage protection (U) without fault signal output UL Recognized : UL1557 File E INTERNL CIRCUIT P1 (1) R (36) S (35) T (34) N1 (2) N(B) (3) NC (4) IN (5) P1 (6) LIC B (33) UFB (7) UFS (8) FB (9) FS (10) WFB (11) WFS (12) U P (13) P (14) W P (15) HIC P (32) U (31) (30) P1 (16) W (29) U N (17) N (18) W N (19) Fo (20) OT (21) CIN (22) CFo (23) N1 (24) NC (25) LIC NU (28) N (27) NW (26) 1

2 TRNSFER MOLDING MXIMUM RTINGS (T j = 25 C, unless otherwise noted) INERTER PRT Supply voltage CC CC(surge) CES Supply voltage (surge) Collectoremitter voltage ±I C Each IGBT collector current ±I CP Each IGBT collector current (peak) T C = 25 C, less than 1ms T j Junction temperature pplied between PNU,,N,NW pplied between PNU,,N,NW T C = 25 C (Note 1) Ratings ~+150 C BRKE PRT Supply voltage CC CC(surge) CES I C I CP RRM I F I FP T j Supply voltage (surge) Collectoremitter voltage Each IGBT collector current pplied between PN(B) pplied between PN(B) T C = 25 C Each IGBT collector current (peak) T C = 25 C, less than 1ms Repetitive peak reverse voltage Forward current T C = 25 C Forward current (peak) Junction temperature (Note 1) Ratings ~+150 C CONERTER PRT Repetitive peak reverse voltage RRM Io DC output current Surge forward current I FSM I 2 t I 2 t capability Junction temperature T j 3phase full wave rectification Peak value of half cycle at 60Hz, Nonrepetitive alue for 1 cycle of surge current Ratings s 30~+150 C CONTROL (PROTECTION) PRT Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage D DB IN FO I FO SC pplied between P1 P NC, N1 NC pplied between UFB UFS, FB FS, WFB WFS pplied between UP, P P,W P,U N, N, W N, IN NC pplied between FO O NC Sink current at F O terminal pplied between CIN NC Ratings ~ ~ D ~ ~ D m 0.5~ ~ D +0.5 Note1: Pulse width and period are limited due to junction temperature. 2

3 TRNSFER MOLDING TOTL SYSTEM Self protection supply voltage limit CC(PROT) (Short circuit protection capability) Module case operation temperature T C T stg iso Storage temperature Isolation voltage Note2: Measurement point of Tc is described in Fig..1. Ratings D = 13.5~16.5, Inverter Part T j = 125 C, nonrepetitive, less than (Note 2) 30~ ~ Hz, Sinusoidal, C 1min, between connected all pins and heat sink plate 2500 C C rms Fig. 1 Measurement point of Tc Control terminals 19.6mm 6.4mm IGBT chip Power terminals Tc point Heat radiation surface THERML RESISTNCE Limits Min. Typ. Max. Inverter IGBT part (per 1/6 module) 0.95 Inverter FWD part (per 1/6 module) 1.30 Junction to case thermal Brake IGBT part (per 1module) 1.15 K/W resistance (Note 3) Brake FWD part (per 1module) 1.30 R th(jc)q R th(jc)f R th(jc)q R th(jc)f R th(jc)r Converter part (per 1/6module) 1.10 Note 3: Grease with good thermal conductivity and longterm endurance should be applied evenly with about +100μm~+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(cf) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(cf) is about 0.25K/W (per 1chip, grease thickness: 20μm, thermal conductivity: 1.0W/m K). 3

4 TRNSFER MOLDING ELECTRICL CHRCTERISTICS (T j = 25 C, unless otherwise noted) INERTER PRT CE(sat) EC t on t C(on) t off t C(off) t rr I CES Collectoremitter saturation voltage FWDi forward voltage Switching times Collectoremitter cutoff current D = DB = 15, IN = 5 IN = 0, I C = 35 CC = 600, D = DB = 15 I C = 35, T j = 25 C I C = 35, T j = 125 C I C C= 35, T j = 125 C, IN = 0 5 Inductive Load (upperlower arm) T j = 25 C CE = CES T j = 125 C Limits Min. Typ. Max m BRKE PRT CE(sat) F t on t C(on) t off t C(off) t rr I CES Collectoremitter saturation voltage FWDi forward voltage Switching times Collectoremitter cutoff current I C = 25, T j = 25 C D = DB = 15, IN = 5 I C = 25, T j = 125 C IN = 0, I F = 25 CC = 600, D = DB = 15 I C C= 25, T j = 125 C, IN = 0 5 Inductive Load T j = 25 C CE = CES T j = 125 C Limits Min. Typ. Max m CONERTER PRT I RRM F Repetitive reversee current Forward voltage drop R = RRM, Tj=125 C I F F=35 Limits Min. Typ. Max m 4

5 TRNSFER MOLDING CONTROL (PROTECTION) PRT Limits Min. Typ. Max. I D I DB SC(ref) U DBt U DBr U Dt U Dr OT FOH FOL t FO I IN th(on) th(off) F D =15, IN =0 Total of P1 NC, N1 NC D =15, IN =5 Circuit current Each part of UF B UFS, D = DB =15, IN =0 FB FS, WFB WFS D = DB =15, IN =5 Short circuit trip level D = 15 (Note 4) Control supply undervoltage Trip level protection(u) for Pside of inverter part Reset level Control supply undervoltage Trip level protection(u) for Nside of inverter part and brake part Reset level Temperature Outpu Pull down R=5.1kΩ, LIC Temperature=100 C (Note 5) Fault output voltage SC = 0, F O terminal pulled up to 5 by 10kΩ SC = 1, I FO = 1m Fault output pulse width In case of C Fo =22nF (Note 6,7) Input current IN = 5 ON threshold voltage OFF threshold voltage pplied between U P, P,W P,U N, N, W N, IN NC Bootstrap Di forward voltage I F =10m including voltage drop by limiting resistor (Note 8) m ms m R Builtin limiting resistance Included in bootstrap Di Ω Note 4 : SC protection works only for Nside IGBT in inverter part. Please select the external shunt resistance such that the SC triplevel is less than 1.7 times of the current rating. 5 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM. Temperature of LIC vs. OT output characteristics is described in Fig : Fault signal Fo outputs when SC or U protection works for Nside IGBT in inverter part. The fault output pulsewidth t FO is depended on the capacitance value of CFO (C FO = t FO [F]). 7 : U protection also works for Pside IGBT in inverter part or brake part without fault signal Fo. 8 : The characteristics of bootstrap Di is described in Fig.2. Fig. 2 Characteristics of Bootstrap Di F I F curve (@Ta=25 C) Including oltage Drop by Limiting Resistor (Right chart is enlarged chart.) 5

6 TRNSFER MOLDING Fig. 3 Temperature of LIC vs. OT Output Characteristics max typ min OT Output [] LIC temperature [ ] Fig. 4 Pattern Wiring round the nalog oltage Output Circuit [ OT terminal] Inside LIC of DIPIPM Temperature signal Ref OT NC 5.1kΩΩ MCU (1) OT outputs the analog signal that is amplified signal of temperature detecting element on LIC by inverting amplifier. (2) It is recommended to insert 5kΩ (5.1kΩΩ is recommended) pull down resistor for getting linear output characteristics at low temperature below room temperature. When the pull down resistor is inserted between OT and NC (control GND), the extra circuit current, which is calculated approximately by OT output voltage divided by pull down resistance, flows as LIC circuit current continuously. In the case of using OT for detecting high temperature over room temperature only, it is unnecessary to insert the pull down resistor. (3) In the case of not using OT, leave OT output NC (No Connection). Refer the application note for DIPIPM+ series about the usage of OT. 6

7 TRNSFER MOLDING MECHNICL CHRCTERISTICS ND RTINGS Limits Min. Typ. Mounting torque Mounting screw : M4 (Note 9) Recommended 1.18N m Terminal pulling strength 20N load JEITED Terminal bending strength 90deg bending with 10N load JEITED Weight 40 Heat radiation part flatness (Note 10) 50 Note 9: Plain washers (ISO 7089~7094) are recommended. Note 10: Measurement positions of heat radiation part flatness are as below. 2 2 Max N m s times g μm + Measurement position (X) Measurement position (Y) Heatsink side luminum heatsink + Heatsink side RECOMMENDED OPERTION CONDITIONS CC D DB D, DB Control supply variation rm shootthrough blocking time t dead f PWM PWIN(on) Minimum input pulse width PWIN(off) NC Supply voltage Control supply voltage Control supply voltage NC variation Limits Min. Typ. Max. pplied between PNU,N,NW pplied between P1 NC, N1 NC pplied between UFB UF FS, FB FS, WF FB WFS For each input signal / PWM input frequency T C 100 C,, T j 125 C 20 khz I C 1.7 times of rated current (Note 11) 1.5 Lesss than 0 800, , rated current CC D DB 18.5, 20 T C 100 C, From rated current N line wiring inductance less than 10nH (Note 12) current to 1.7 times of rated 3.5 Between NC NU N NW (including surge) T j Junction temperature C Note 11: DIPIPM might not make response if the input signal pulse width is less than PWIN(on). 12: DIPIPM might make no response or delayedd response (Pside IGBT only) for the input signal with off pulse width less than PWIN(off). Please referr below figure about delayed response. bout Delayed Response gainst Shorter Input Off Signal Than PWIN(off) (P side only) P Side Control Input Internal IGBT Gate Output Current Ic t2 t1 Real line off pulse width>pwin(off) ); turn on time t1 Broken line off pulse width<pwin(off); turn on time t2 7

8 TRNSFER MOLDING Fig. 5 Timing Charts of The DIPIPM Protective Functions [] ShortCircuit Protection (Nside only with the external shunt resistor and RC filter) a1. Normal operation: IGBT ON and outputs current. a2. Short circuit current detection (SC trigger) (It is recommended to set RC time constant 1.5~2.0 so that IGBT shut down within 2.0 when SC. ) a3. ll Nside IGBT's gates are hard interrupted. a4. ll Nside IGBTs turn OFF. a5. LIC starts outputting fault signal (fault signal output time is controlled by external capacitor C FO ) a6. Input = L : IGBT OFF a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (L H). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) a8. Normal operation: IGBT ON and outputs current. Lowerside control input a6 Protection circuit state SET RESET Internal IGBT gate a3 a4 Output current Ic Sense voltage of the shunt resistor SC trip current level a1 a2 SC reference voltage a7 a8 Delay by RC filtering Error output Fo a5 [B] Underoltage Protection (Nside, U D D) b1. Control supply voltage D exceeds under voltage reset level (U Dr ), but IGBT turns ON by next ON signal (L H). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) b2. Normal operation: IGBT ON and outputs current. b3. D level drops to under voltage trip level. (U Dt ). b4. ll Nside IGBTs turn OFF in spite of control input condition. b5. Fo outputs for the period set by external capacitor C FO, but output is extended during D keeps below U Dr. b6. D level reaches U Dr. b7. Normal operation: IGBT ON and outputs current. Control input Protection circuit state RESET SET RESET Control supply voltage D U Dr b1 U Dt b3 b6 b2 b4 b7 Output current Ic Error output Fo b5 8

9 TRNSFER MOLDING [C] Underoltage Protection (Pside, U DB) c1. Control supply voltage DB rises. fter the voltage reaches under voltage reset level UDBr, IGBT turns on by next ON signal (L H). c2. Normal operation: IGBT ON and outputs current. c3. DB level drops to under voltage trip level (U DBt ). c4. IGBT of the correspond phase only turns OFF in spite of control input signal level, but there is no F O signal output. c5. DB level reaches U DBr. c6. Normal operation: IGBT ON and outputs current. Control input Protection circuit state RESET SET RESET Control supply voltage DB U DBr c1 U DBt c3 c5 c2 c4 c6 Output current Ic Error output Fo Keep Highlevel (no fault output) [D] U protection sequence for Brake circuit (U D ) d1. Control supply voltage D rises. fter the voltage reaches under voltage reset level UDr, IGBT turns on by next ON signal (L H). d2. Normal operation: (turning IGBT on and starting conducting current) d3. D level drops to under voltage trip level (U Dt ). d4. IGBT of the Brake circuit turns OFF in spite of control input signal level, but there is no F O signal output. d5. DB level reaches U Dr. d6. Normal operation: (turning IGBT on and starting conducting current) Control input Protection circuit state RESET SET RESET Control supply voltage D U Dr d1 U Dt d3 d5 d2 d4 d6 Output current Ic Error output Fo Keep Highlevel (no fault output) 9

10 TRNSFER MOLDING Fig. 6 Example of pplication Circuit, Prevention circuit for inrush current P1(1) X R (36) S (35) T (34) C input N1 (2) N(B) (3) Y R3 C5 NC (4) IN (5) LIC B (33) Brake Resistor P1 (6) C1 D1 C2 UFB (7) + UFS (8) FB (9) + FS (10) HIC P (32) X + WFB (11) U (31) WFS (12) R3 U P (13) MCU R3 R3 C5 C5 C5 P (14) W P (15) (30) M R2 5 P1 (16) C2 W (29) C3 + R3 C5 R3 U N (17) N (18) LIC NU (28) R3 C5 W N (19) C5 5.1kΩ Fo (20) OT (21) N (27) 15 D CIN (22) C4 CFo (23) NW (26) Long wiring might cause short circuit failure C1 + D1 C2 N1 (24) NC (25) Long wiring might cause SC level fluctuation and malfunctionn C B R1 Shunt resistor D Y Long GND wiring might generate noise to input signal and cause IGBT malfunction Control GND patterning N1 Power GND patterning 10

11 TRNSFER MOLDING Note for the previous application circuit (1) If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point N1 (near the terminal of shunt resistor). (2) It is recommended to insert a Zener diode D1(24/1W) between each pair of control supply terminals to prevent surge destruction. (3) To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a μF snubber capacitor C3 between the PN1 terminals is recommended. (4) R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, tempcompensated type. The time constant R1C4 should be set so that SC current is shut down within 2. (1.5~2 is recommended generally.) SC interrupting time might vary with the wiring pattern, so the enough evaluation on the real system is necessary. (5) To prevent malfunction, the wiring of, B, C should be as short as possible. (6) The point D at which the wiring to CIN filter is divided should be near the terminal of shunt resistor. NU, N, NW terminals should be connected each other at near those threee terminals when it is used by one shunt operation. Low inductance SMD type with tight tolerance, tempcompensated type is recommended for shunt resistor. (7) ll capacitors should be mounted as close to the terminals as possible. ( C1: good temperature, frequency characteristic electrolytic type and C2:0.01μ2μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.) (8) Input logic is Highactive. There is a 3.3kΩ(min.) pulldown resistor in the input circuit of IC. To prevent malfunction, the input wiring should be as short as possible. When using RC coupling, make the input signal level meet the turnon and turnoff threshold voltage. (9) Fo output is open drain type. Fo output will be max 0.95(@I FO =1m,25 C), so it should be pulled up to MCU or control power supply (e.g. 5,15) by a resistor that makes I FO up to 1m. (In the case of pulled up to 5, 10kΩ is recommended.) bout driving opto coupler by Fo output, please refer the application note of this series. (10) Fo pulse width can be set by the capacitor connected to CFO terminal. C FO (F) = 9.1 x 10 6 x t FO (Required Fo pulse width). (11) If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous operation. To avoid such problem, line ripple voltage should meet d/dt +/1/, ripple 2pp. (12) For DIPIPM, it isn't recommended to drive same load by parallel connection with other phase IGBT or other DIPIPM. (13) No.4 and No.25 NC terminals (GND terminal for control supply) are connected mutually inside of DIPIPM+ and also No.6 and No.16 P1 terminals are connected mutually inside, please connect either No.4 or No.25 terminal to GND and also connect either No.6 or No.16 terminal to supply and make the unused terminal leave no connection. Fig. 7 MCU I/O Interface Circuit 5 line 10kΩ MCU DIPIPM U P, P,W P, U N, N,W N, IN Fo 3.3kΩ(min) NC (Logic) Note) Design for input RC filter depends on the PWM control scheme used in the application and the wiring impedance of the printed circuit board. But because noisier in the application for 1200 rating, it is strongly recommended to insert RC filter. (Time constant: over 100ns. e.g. 100Ω, 1000pF) The DIPIPM input signal interface integrates a min. 3.3kΩ pulldown resistor. Therefore, when using RC filter, be careful to satisfy turnon threshold voltage requirement. Fo output is open drain type. It should be pulled up to the positive side of 5 or 15 power supply with the resistor that limits Fo sink current I Fo under 1m. In the case of pulling up to 5 supply, over 5.1kΩ is needed. (10kΩ is recommended.) Fig. 8 Pattern Wiring round the Shunt Resistor DIPIPM NU, N, NW should be connected each other at near terminals. DIPIPM Wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mm is about 10nH. Each wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mmm is about 10nH. NC NU N NW Shunt resistor N1 GND wiring from NC should be connected close to the terminal of shunt resistor. NC NU N NW Shunt resistors N1 GND wiring from NC should be connected close to the terminal of shunt resistor. Low inductance shunt resistor like surface mounted (SMD) type is recommended. 11

12 TRNSFER MOLDING Fig. 9 External SC Protection Circuit with Using Three Shunt Resistors DIPIPM Drive circuit P Pside Nside NC Drive circuit Protection circuit CIN NW N NU U W C External protection circuit D N1 Shunt resistors R f C f Comparator (Open collector output type) B 5 ref + ref + ref + OR output (1) It is necessary to set the time constant R f C f of external comparator input so that IGBT stop within 2 when short circuit occurs. SC interrupting time might vary with the wiring pattern, comparator speed and so on. (2) The threshold voltage ref should be set up the same rating of short circuit trip level (sc(ref) typ. 0.48). (3) Select the external shunt resistance so that SC triplevel is less than specified value. (4) To avoid malfunction, the wiring, B, C should be as short as possible. (5) The point D at which the wiring to comparator is divided should be near the terminal of shunt resistor. (6) OR outpu high level should be over (=maximum sc(ref)). (7) GND of Comparator, ref circuit and Cf should be not connected to noisy power GND but to control GND wiring. 12

13 TRNSFER MOLDING Fig. 10 Package Outlines Dimensions in mm TERMINL CODE 13

14 TRNSFER MOLDING Revision Record Rev. Date Page Revised contents 1 18/10/2016 New 14

15 TRNSFER MOLDING Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belongingg to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ll information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described heree may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeaterr use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanesee government and cannot be imported into a country other than the approved destination. ny diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electricc Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein MITSUBISHI ELECTRIC CORPORTION. LL RIGHTS RESERED. DIPIPM, DIPIPM+ and CSTBTT are trademarks of MITSUBISHI ELECTRIC CORPORTION N. 15