Application of diodes

Size: px
Start display at page:

Download "Application of diodes"

Transcription

1 Application of diodes Instructions for the practical exercises of subject AE4B34EM 1 Objective measurements 2 The purpose of this measure is the introduction to the features and applications of semiconductor diodes. During this measurement, you will be able to verify in practice the basic parameters of the diodes, try out their function and basic applications. 3 Preparing to exercise 4 Tasks 5 Theory Study the principle of metallurgical PN junction, Shockley equation and the effect of material structure on the resulting diode s threshold voltage. Study the parameters of ideal and real diodes. Study the function of diode rectifiers. Study how to use the measuring devices and read the catalog parameters of the diodes. Create a simple current source, measure its parameters to calibrate. Measure the voltage drop in the forward direction of the diodes on the calibrated values of the current, which supplies power source and draw the approximate VA characteristics of selected diodes. Measure the reverse recovery time t rr of KY708 diode. Connect single-pulsed rectifier with filter capacitor and load resistor. Display the output voltage and charging current for two different values of filter capacitor capacitance. Connect Greatz diode-bridge (two-pulsed rectifier) and display the output voltage. 5.1 Boards Evaluation boards on which we perform measurements contain all the necessary components for basic measurements on semiconductor diodes and diode rectifiers. Component leads are connected to the jacks, which are available on the front panel. For connecting devices use a thin connecting wires, to connect measuring devices use wires with connectors of a larger size. To connect the oscilloscope use the attached probes. Fig. 1 Evaluation board for diodes testing

2 Fig. 2 Diodes rectifier board On the first board it is possible to characterize different types of semiconductor diodes, the list of the basic parameters is given in the following chapter. The board consists of a power source, which is based on feedback voltage stabilizer type This stabilizer "guards" the voltage across the resistor plugged in the current branch. Since the voltage on this resistor is directly proportional to the current passed through, the current is also stabilized at a constant size by formula Iout = 5 / R [A, Ω]. This current source allows us to set the operating point of simple diodes and the possibility of measuring VA diode characteristics. Measurements using voltage source would be very complicated for precise voltage settings U F as diodes in their work areas have low differential resistance. The second board enables measurements on different types of diode rectifiers, including simulation of various load sizes. You can also choose different capacity and see the output voltage ripple. 5.2 Parameters of measured diodes Before we start connecting devices together, it is necessary to know the maxiaml parameters of several diodes, which must not be exceeded. The most restrictive parameters in the application of LEDs are mostly maximum forward current and maximum reverse voltage. Furthermore, we can meet the requirements of diode power dissipation, this is important in applications such as Zener diodes as the voltage stabilizer. The manufacturer gives a large number of parameters in the data sheets for their products, some are listed in Table 1 Tab 1 Diodes parameters Maximal values Nr. Typ I FAV [ma] I FSM [A] U RRM [V] U RSM [V] Notice 1 BB 204B Varikap 2 KY 130/ Rectifying p-n diode 3 ZD 5,1 Zener diode 4 BAT ,06 15 Schottky diode 5 BP Photodiode 6 LED R 20 5 Red LED 7 LED Y 20 5 Yellow LED 8 LED G Green LED 9 LED INFRA Infrared diode Heated 1 MBR Power Schottky diode Heated 2 KY Power P-N diode Notice: I FAV (Average forward current) I FSM (Forward surge maximum current) The maximum permissible peak forward current value, which cannot be repeated. To avoid damage to the diode, it can reapply only after remission of thermal effects. A typical example is a single overload caused by the diodes in the rectifier filter capacitor charging after applying the input voltage.

3 U RRM (Reverse repetitive maximum voltage) The maximum value of repeatable reverse voltage diode. This is a peak reverse voltage, because it decides on the structure breakdown diodes avalanche ionization mechanism. U RSM (Reverse surge maximum voltage) Unique maximum reverse voltage. The significance of this parameter is similar to the I FSM, the reverse voltage can be applied only once. A typical example is the overload overvoltage from electrical surges. 6 Practical measurement 6.1 Current source calibration In Figure 3 we can see the connection of single current source comprising a feedback voltage stabilizer. The principle of its action has already been introduced in Section 4.1, now proceed to verify its function and calibration. Resistor labeled R can be selected from four possible pieces varying its resistance value, the variability is achieved by current source output current. Inaccuracy of the resulting current is given by the instability of the feedback voltage stabilizer, inaccuracies of resistance R, and stabilizer s own consumption, which is expressed in current I Q. Use the schema shown in Figure 3. Before connecting measuring instruments set their measuring ranges as required. It is advisable to start higher range and refine it during the measurement. Prevent the destruction of the measuring device. Before connecting the power source, first set the output voltage to 12V and the selected output current limit to 500mA. Use all the values of resistors R to reach different output currents sources and write their measured values in Table 2 Fig. 3 Current source calibration Tab 2 - Current source calibration Output current I F [ma] Proposed value Measured value 6.2 V-A characteristics of diodes Take the previous schema and connect the voltmeter to read the forward voltage diode U F. Always connect the anode of the diode to the positive pole of the circuit, in this case the output current source. The cathode diodes (we know it as the bars of the diode schematic brand) connect to a common negative terminal of the circuit. Measure the voltage drops of diodes on the product outside the diodes placed on the hot plate for 4 different values of forward current. The measured values in the table and draw voltage characteristics of Schottky diodes, rectifier silicon diodes and one of the LEDs.

4 Fig. 4 Voltage drop measurement Tab 3 Voltage drops on diodes I F [ma] U F [V] BB204B KY 130 ZD 5,1 BAT 45 BP 104 LED-R LED-Y LED-G LED-IR Fig 5 - V-A characteristics 6.3 Reverse recovery time measurement One of the important parameters of a rectifier diode is reverse recovery time t rr. It is defined by the length of diode s commutation as the time interval between the zero crossing and the intersection of the straight line, led by 0.9 points and 0.25 I RRM with the axis. See Figure 6

5 Fig 6 Reverse recovery time definition Measurement of recovery will be performed on the diode KY 708, the schema can be seen in Figure 7. Current flowing through the diode is measured as a voltage drop across the resistor, whose resistance value is known. For measurements use a resistor in the upper right corner of the product, this has a resistance value of 100 Ω. According to Ohm's law we can therefore calculate the magnitude of the current passing through a U REZ /100 I R = [A, V]. Connected to the oscilloscope we can follow the output. Amplitude of the harmonic generator voltage is set to the highest possible value, its frequency gradually increase until it is clearly visible on the oscilloscope negative overshoot voltage. Subtract the size of the negative recovery period, as defined in Figure 6 and write it. Since this value is dependent on the size and speed of forward current commutation (the size of the stored charge and speed of clearing), subtract the following additional conditions and record them. Fig 7 Reverse recovery time - circuit Generator frequency f = Forward current peak I FM = Reverse recovery time t rr = 6.4 Single-pulsed rectifier measurement Use the schema, which is shown in Figure 8. Before connecting the measuring instruments set their measuring ranges as required. Both probes are connected to the oscilloscope ground terminals, this is due to oscilloscope design. In this case this means that the probe connected to channel 2 must be connected to the point with the lowest potential in the circuit. To display the progress of the voltage drop across the resistor RS in the correct direction, use the possibility to invert the waveform on the oscilloscope screen. Us the INVERT button on the oscilloscope. This voltage drop is again proportional to the current passed through, using Ohm's theorem we can convert it back. Due to the fact that the resistance value resistor RS is equal to 1 Ω, the voltage waveform scaled in mv is direct current waveform scaled in ma.

6 Use the output capacitor electrolytic capacitor with 1000 uf. Now display the waveforms of output voltage and charging current Iout capacitor I D for selected resistance load resistor. The displayed waveforms depend on the charging current, the size of the DC component and the output voltage s size of the curl. Use these data to calculate the ripple percentage. Fig 8 Output voltage and charging current circuit 1) R Z = 220 Ω C F = 100 µf U výst u výstšš = U OUT = U OUTPP I výstmax = I MAX p = u voutpp Uout. 100 =. 100 = (%) 2) R Z = 220 Ω C F = 1000 µf U výst u výstšš = U OUT = U OUTPP I výstmax = I MAX p = u voutpp Uout. 100 =. 100 = (%) 6.5 Double-pulsed (Graetz) rectifier measurement Build the Graetz bridge and make similar measurements as in the previous task. Using the same value of capacitance of filter capacitor and load resistor it drastically changes the output voltage ripple. See this situation on an oscilloscope screen and find out why the output voltage ripple is lower than in previous case.

7 Fig 9 Double-pulsed rectifier

1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points)

1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points) Exam 1 Name: Score /60 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier.

More information

SAFEIR Series 10ETS12PbF

SAFEIR Series 10ETS12PbF Bulletin I9 /04 SAFEIR Series 0ETSPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) V F < V @ 0A I FSM = 00A Description/ Features V RRM = 00V The 0ETSPbF rectifier SAFEIR series has been optimized for

More information

High Voltage, Input Rectifier Diode, 20 A

High Voltage, Input Rectifier Diode, 20 A VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series High Voltage, Input Rectifier Diode, 2 A FEATURES Very low forward voltage drop 2 TO-22 FULL-PAK 3 Cathode 2 3 Anode C max. operating junction temperature Designed

More information

EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10

EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 DIODE CHARACTERISTICS AND CIRCUITS EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and

More information

EXPERIMENT 5 : THE DIODE

EXPERIMENT 5 : THE DIODE EXPERIMENT 5 : THE DIODE Component List Resistors, one of each o 1 10 10W o 1 1k o 1 10k 4 1N4004 (I max = 1A, PIV = 400V) Diodes Center tap transformer (35.6V pp, 12.6 V RMS ) 100 F Electrolytic Capacitor

More information

Diodes (non-linear devices)

Diodes (non-linear devices) C H A P T E R 4 Diodes (non-linear devices) Ideal Diode Figure 4.2 The two modes of operation of ideal diodes and the use of an external circuit to limit (a) the forward current and (b) the reverse voltage.

More information

Diode Characteristics and Applications

Diode Characteristics and Applications Diode Characteristics and Applications Topics covered in this presentation: Diode Characteristics Diode Clamp Protecting Against Back-EMF Half-Wave Rectifier The Zener Diode 1 of 18 Diode Characteristics

More information

3. Diode, Rectifiers, and Power Supplies

3. Diode, Rectifiers, and Power Supplies 3. Diode, Rectifiers, and Power Supplies Semiconductor diodes are active devices which are extremely important for various electrical and electronic circuits. Diodes are active non-linear circuit elements

More information

Class #8: Experiment Diodes Part I

Class #8: Experiment Diodes Part I Class #8: Experiment Diodes Part I Purpose: The objective of this experiment is to become familiar with the properties and uses of diodes. We used a 1N914 diode in two previous experiments, but now we

More information

Device Marking Code Package Packaging. SDB10200DI = Specific Device Code YWW = Year & Week Code Marking -. Y = Year Code -.

Device Marking Code Package Packaging. SDB10200DI = Specific Device Code YWW = Year & Week Code Marking -. Y = Year Code -. Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features Low forward voltage drop and leakage current Low power loss and High efficiency High surge capability Dual common cathode rectifier

More information

SAFEIR Series 20ETS12, 20ETS12S

SAFEIR Series 20ETS12, 20ETS12S SAFEIR Series 0ETS, 0ETSS INPUT RECTIFIER DIODE Description/Features The 0ETS.. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

More information

Electronics I. laboratory measurement guide Andras Meszaros, Mark Horvath

Electronics I. laboratory measurement guide Andras Meszaros, Mark Horvath Electronics I. laboratory measurement guide Andras Meszaros, Mark Horvath 3. Measurement: Diodes and rectifiers 2017.02.27. In this session we are going to measure forward and reverse characteristics of

More information

EXPERIMENT 5 : DIODES AND RECTIFICATION

EXPERIMENT 5 : DIODES AND RECTIFICATION EXPERIMENT 5 : DIODES AND RECTIFICATION Component List Resistors, one of each o 2 1010W o 1 1k o 1 10k 4 1N4004 (Imax = 1A, PIV = 400V) Diodes Center tap transformer (35.6Vpp, 12.6 VRMS) 100 F Electrolytic

More information

Power supply circuits

Power supply circuits Power supply circuits Practical exercise in Analog Electronics Abstract In this lab some different power supply circuits should be characterized. 1 Introduction he four basic constituents of a power supply

More information

Lab 2: Linear and Nonlinear Circuit Elements and Networks

Lab 2: Linear and Nonlinear Circuit Elements and Networks OPTI 380B Intermediate Optics Laboratory Lab 2: Linear and Nonlinear Circuit Elements and Networks Objectives: Lean how to use: Function of an oscilloscope probe. Characterization of capacitors and inductors

More information

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS PESIT BANGALORE SOUTH CAMPUS QUESTION BANK BASIC ELECTRONICS Sub Code: 17ELN15 / 17ELN25 IA Marks: 20 Hrs/ Week: 04 Exam Marks: 80 Total Hours: 50 Exam Hours: 03 Name of Faculty: Mr. Udoshi Basavaraj Module

More information

Device Marking Code Package Packaging

Device Marking Code Package Packaging Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features Low forward voltage drop and leakage current Low power loss and High efficiency High surge capacity Dual common cathode rectifier

More information

600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram

600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram IXRFFB611 Features Silicon carbide Schottky diodes No reverse recovery for soft turn-off Temperature independent switching behavior Low leakage current Easy to mount, no insulators needed High power density

More information

EXPERIMENT 5 : THE DIODE

EXPERIMENT 5 : THE DIODE EXPERIMENT 5 : THE DIODE Component List Resistors, one of each o 1 10 10W o 1 1k o 1 10k 4 1N4004 (Imax = 1A, PIV = 400V) Diodes Center tap transformer (35.6Vpp, 12.6 VRMS) 100 F Electrolytic Capacitor

More information

Lab 2: Diode Characteristics and Diode Circuits

Lab 2: Diode Characteristics and Diode Circuits 1. Learning Outcomes Lab 2: Diode Characteristics and Diode Circuits At the end of this lab, the students should be able to compare the experimental data to the theoretical curve of the diodes. The students

More information

Power supply circuits

Power supply circuits Power supply circuits Practical exercise in Analog Electronics Abstract In this lab some different power supply circuits should be characterized. 1. Introduction The four basic constituents of a power

More information

Homework No. 2 Diodes Electronics I. Reading Assignment: Chapters 1 through 4 in Microelectronic Circuits, by Adel S. Sedra and Kenneth C. Smith.

Homework No. 2 Diodes Electronics I. Reading Assignment: Chapters 1 through 4 in Microelectronic Circuits, by Adel S. Sedra and Kenneth C. Smith. Homework No. 2 Diodes Electronics I Homework Quiz: See website for quiz date. Reading Assignment: Chapters 1 through 4 in Microelectronic Circuits, by Adel S. Sedra and Kenneth C. Smith. 1. Exercises 4.1

More information

Figure 1: Diode Measuring Circuit

Figure 1: Diode Measuring Circuit Diodes, Page 1 Diodes V-I Characteristics signal diode Measure the voltage-current characteristic of a standard signal diode, the 1N914, using the circuit shown in Figure 1 below. The purpose of the back-to-back

More information

Input Rectifier Diode, 10 A

Input Rectifier Diode, 10 A Input Rectifier Diode, A ETS..S High Voltage Series Vishay High Power Products Base cathode 1 3 D PAK Anode Anode PRODUCT SUMMARY V F at A < 1 V I FSM A V RRM 8/1 V DESCRIPTION/FEATURES The ETS..S rectifier

More information

Teccor brand Thyristors AN1001

Teccor brand Thyristors AN1001 A1001 Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers (SCRs), Triacs, SIDACs, and DIACs.

More information

70HF(R) SERIES 70 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics

70HF(R) SERIES 70 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics 70HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available 70 A Types

More information

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 60 A 6EPF.. Base common cathode 2 1 3 Cathode Anode TO-247AC modified PRODUCT SUMMARY V F at 3 A t rr V RRM Anode 1 6CPF.. Base common cathode 2, 4 TO-247AC Anode 3 < 1.2 V 95 ns V/1 V FEATURES/DESCRIPTION

More information

Fast Soft Recovery Rectifier Diode, 20 A

Fast Soft Recovery Rectifier Diode, 20 A 2ETF..S Soft Recovery Series D 2 PAK (SMD-22) Base common cathode + 2 Anode - - Rectifier Diode, 2 A 3 Anode FEATURES/DESCRIPTION The 2ETF..S fast soft recovery rectifier series has been optimized for

More information

Fast Soft Recovery Rectifier Diode, 30 A

Fast Soft Recovery Rectifier Diode, 30 A 3EPF.., 3CPF.. Soft Recovery Series 3EPF.. 3CPF.. Rectifier Diode, 3 A FEATURES/DESCRIPTION The 3EPF.. and 3CPF.. soft recovery rectifier series has been optimized for combined short reverse recovery time

More information

The preferred Exercise is shown in Exercises 5B or 5C.

The preferred Exercise is shown in Exercises 5B or 5C. ECE 231 Laboratory Exercise 5A The preferred Exercise is shown in Exercises 5B or 5C. Laboratory Group (Names) OBJECTIVES Validate the Schottky diode equation. Calculate the dc and dynamic (ac) resistance

More information

MBRS360TR SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 60V. Bulletin PD rev. D 07/04. Major Ratings and Characteristics

MBRS360TR SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 60V. Bulletin PD rev. D 07/04. Major Ratings and Characteristics MBRS360TR SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 60V Major Ratings and Characteristics Description/ Features Characteristics Value Units The MBRS360TR surface-mount Schottky rectifier has been

More information

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 60 A 6EPF.. Base cathode 3 Cathode Anode TO-47AC modified PRODUCT SUMMARY V F at 3 A t rr V RRM 6CPF.. Base cathode 3 Anode Anode TO-47AC

More information

EE320L Electronics I. Laboratory. Laboratory Exercise #4. Diode Rectifiers and Power Supply Circuits. Angsuman Roy

EE320L Electronics I. Laboratory. Laboratory Exercise #4. Diode Rectifiers and Power Supply Circuits. Angsuman Roy EE320L Electronics I Laboratory Laboratory Exercise #4 Diode Rectifiers and Power Supply Circuits By Angsuman Roy Department of Electrical and Computer Engineering University of Nevada, Las Vegas Objective:

More information

MBRD320 MBRD330 MBRD340

MBRD320 MBRD330 MBRD340 MBRD320 MBRD330 MBRD340 SCHOTTKY RECTIFIER 3.0 Amp I F(AV) = 3.0Amp V R = 20/40V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 20/ 40 V I FSM @

More information

Figure 1: Diode Measuring Circuit

Figure 1: Diode Measuring Circuit Diodes, Page 1 Diodes V-I Characteristics signal diode Measure the voltage-current characteristic of a standard signal diode, the 1N914, using the circuit shown in Figure 1 below. The purpose of the back-to-back

More information

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A Insulated Single Phase Hyperfast Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 65 V I O at T C = 123 C 6 A t rr 63 ns Type Modules - Bridge, Hyperfast Package SOT-227 Circuit configuration

More information

Circuit operation Let s look at the operation of this single diode rectifier when connected across an alternating voltage source v s.

Circuit operation Let s look at the operation of this single diode rectifier when connected across an alternating voltage source v s. Diode Rectifier Circuits One of the important applications of a semiconductor diode is in rectification of AC signals to DC. Diodes are very commonly used for obtaining DC voltage supplies from the readily

More information

EE 110 Introduction to Engineering & Laboratory Experience Saeid Rahimi, Ph.D. Lab 6 Diodes: Half-Wave and Full-Wave Rectifiers Converting AC to DC

EE 110 Introduction to Engineering & Laboratory Experience Saeid Rahimi, Ph.D. Lab 6 Diodes: Half-Wave and Full-Wave Rectifiers Converting AC to DC EE 110 Introduction to Engineering & Laboratory Experience Saeid Rahimi, Ph.D. Lab 6 Diodes: Half-Wave and Full-Wave Rectifiers Converting C to DC The process of converting a sinusoidal C voltage to a

More information

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have

More information

Input Rectifier Diode, 80 A

Input Rectifier Diode, 80 A Input Rectifier Diode, 8 A 8EPS16 High Voltage Series Vishay High Power Products TO-247AC PRODUCT SUMMARY V F at 8 A I FSM V RRM Base cathode 4, 2 1 3 Anode Anode 1.17 V 145 A 16 V DESCRIPTION/FEATURES

More information

High Voltage, Input Rectifier Diode, 20 A

High Voltage, Input Rectifier Diode, 20 A VS-2ETS8FP-M3, VS-2ETS2FP-M3 High Voltage, Input Rectifier Diode, 2 A 2 2L TO-22 FullPAK PRIMARY CHARACTERISTICS Cathode 2 Anode I F(AV) 2 A V R 8 V, 2 V V F at I F. V I FSM 3 A T J max. C Package 2L TO-22

More information

Analog Electronic Circuits

Analog Electronic Circuits Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits

More information

Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21)

Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive

More information

Concepts to be Covered

Concepts to be Covered Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

1.5 MHz, 600mA Synchronous Step-Down Converter

1.5 MHz, 600mA Synchronous Step-Down Converter GENERAL DESCRIPTION is a 1.5Mhz constant frequency, slope compensated current mode PWM step-down converter. The device integrates a main switch and a synchronous rectifier for high efficiency without an

More information

Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21)

Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive

More information

WESTCODE. An IXYS Company. Date:- 3 Jan, Data Sheet Issue:- A1. Provisional Data High Power Sonic FRD Type E0460QC45C. Absolute Maximum Ratings

WESTCODE. An IXYS Company. Date:- 3 Jan, Data Sheet Issue:- A1. Provisional Data High Power Sonic FRD Type E0460QC45C. Absolute Maximum Ratings WESTCODE An IXYS Company Date:- 3 Jan, 2012 Data Sheet Issue:- A1 Absolute Maximum Ratings Provisional Data High Power Sonic FRD Type VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,

More information

WESTCODE. Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220)

WESTCODE. Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220) WESTCODE An IXYS Company Date:- 23 Jun, 2004 Data Sheet Issue:- 1 Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220) Absolute Maximum Ratings OLTAGE RATINGS MAXIMUM LIMITS

More information

WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14)

WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) An IXYS Company Date:- 14 Oct, 2004 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS

More information

Diodes. Diodes, Page 1

Diodes. Diodes, Page 1 Diodes, Page 1 Diodes V-I Characteristics signal diode Measure the voltage-current characteristic of a standard signal diode, the 1N914, using the circuit shown in Figure 1 below. The purpose of the back-to-back

More information

Input Rectifier Diode, 60 A

Input Rectifier Diode, 60 A Input Rectifier Diode, 6 A Vishay High Power Products TO-247AC modified PRODUCT SUMMARY V F at 6 A I FSM V RRM Base common cathode 2 3 Anode Anode 2.9 V 95 A 8/2 V DESCRIPTION/FEATURES The 6EPS.. rectifier

More information

Table of Contents. iii

Table of Contents. iii Table of Contents Subject Page Experiment 1: Diode Characteristics... 1 Experiment 2: Rectifier Circuits... 7 Experiment 3: Clipping and Clamping Circuits 17 Experiment 4: The Zener Diode 25 Experiment

More information

NORTHWESTERN UNIVERSITY TECHNOLOGICAL INSTITUTE

NORTHWESTERN UNIVERSITY TECHNOLOGICAL INSTITUTE NORTHWESTERN UNIVERSITY TECHNOLOGICAL INSTITUTE ECE-270 Experiment #4 X-Y DISPLAY TECHNIQUES: DIODE CHARACTERISTICS PRELAB Use your textbook and/or the library to answer the following questions about diodes.

More information

SDS4148G SWITCHING DIODE

SDS4148G SWITCHING DIODE SWITCHING DIODE Small Signal Fast Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOD-123 surface mounted device (SMD) packages.

More information

High Voltage, Input Rectifier Diode, 10 A

High Voltage, Input Rectifier Diode, 10 A VS-ETS..FPPbF Series, VS-ETS..FP-M3 Series High Voltage, Input Rectifier Diode, A TO-22 FULL-PAK PRODUCT SUMMARY Base cathode 3 Cathode Anode Package TO-22FP I F(AV) A V R 8 V to 2 V V F at I F. V I FSM

More information

Electric Circuit Fall 2017 Lab3 LABORATORY 3. Diode. Guide

Electric Circuit Fall 2017 Lab3 LABORATORY 3. Diode. Guide LABORATORY 3 Diode Guide Diodes Overview Diodes are mostly used in practice for emitting light (as Light Emitting Diodes, LEDs) or controlling voltages in various circuits. Typical diode packages in same

More information

MBR340 SCHOTTKY RECTIFIER. Bulletin PD rev. C 12/04. Description/ Features. Major Ratings and Characteristics. Characteristics Values Units

MBR340 SCHOTTKY RECTIFIER. Bulletin PD rev. C 12/04. Description/ Features. Major Ratings and Characteristics. Characteristics Values Units MBR340 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 30/40 V I FSM @ tp = 5 µs sine 430 A V F @ 3 Apk, T = 25 C 0.6

More information

EXPERIMENT 5 : THE DIODE

EXPERIMENT 5 : THE DIODE EXPERIMENT 5 : THE DIODE Equipment List Dual Channel Oscilloscope R, 330, 1k, 10k resistors P, Tri-Power Supply V, 2x Multimeters D, 4x 1N4004: I max = 1A, PIV = 400V Silicon Diode P 2 35.6V pp (12.6 V

More information

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A VS-ETF..SPbF Series Surface Mount Fast Soft Recovery Rectifier Diode, A TO-63AB (D PAK) PRODUCT SUMMARY 3 Base cathode + 3 Anode - - Anode Package TO-63AB (D PAK) I F(AV) A V R V, V V F at I F.33 V I FSM

More information

Description/ Features 3.80 (.150) 3.30 (.130) 0.30 (.012) 0.15 (.006) 2.0 TYP. (.079 TYP.)

Description/ Features 3.80 (.150) 3.30 (.130) 0.30 (.012) 0.15 (.006) 2.0 TYP. (.079 TYP.) MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics MBRS130TR Units I F(AV) Rectangular 1.0 A waveform V RRM 30 V I FSM @ t p = 5 µs sine 230 A V F @ 1.0Apk, T = 125

More information

DATA SHEET. BYD71 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 19

DATA SHEET. BYD71 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 19 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MD Supersedes data of 996 May 4 File under Discrete Semiconductors, SC 996 Sep 9 FEATURES Glass passivated High maximum operating temperature Low leakage

More information

Schottky Rectifier, 16 A

Schottky Rectifier, 16 A Schottky Rectifier, 16 A MBR16.. Series TO-220AC Base cathode 2 1 3 Cathode Anode FEATURES 150 C operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation

More information

Class #9: Experiment Diodes Part II: LEDs

Class #9: Experiment Diodes Part II: LEDs Class #9: Experiment Diodes Part II: LEDs Purpose: The objective of this experiment is to become familiar with the properties and uses of LEDs, particularly as a communication device. This is a continuation

More information

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode.

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode. 5ETH6 5ETH6S 5ETH6- Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Single Die Center Tap Module t rr = ns typ.

More information

PHY 351/651 LABORATORY 5 The Diode Basic Properties and Circuits

PHY 351/651 LABORATORY 5 The Diode Basic Properties and Circuits Reading Assignment Horowitz, Hill Chap. 1.25 1.31 (p35-44) Data sheets 1N4007 & 1N4735A diodes Laboratory Goals PHY 351/651 LABORATORY 5 The Diode Basic Properties and Circuits In today s lab activities,

More information

SCHOTTKY RECTIFIER. Description/ Features 3.80 (.150) 3.30 (.130) 0.30 (.012) 0.15 (.006)

SCHOTTKY RECTIFIER. Description/ Features 3.80 (.150) 3.30 (.130) 0.30 (.012) 0.15 (.006) Bulletin PD-2059 rev. C 03/03 MBRS40TR SCHOTTKY RECTIFIER Amp SMB Major Ratings and Characteristics Characteristics MBRS40TR Units I F(AV) Rectangular waveform.0 A V RRM 40 V I FSM @ tp = 5 µs sine 380

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 2 BASIC CIRCUIT ELEMENTS OBJECTIVES The purpose of this experiment is to familiarize the student with

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2

More information

Brown University PHYS 0060 Physics Department LAB B Circuits with Resistors and Diodes

Brown University PHYS 0060 Physics Department LAB B Circuits with Resistors and Diodes References: Circuits with Resistors and Diodes Edward M. Purcell, Electricity and Magnetism 2 nd ed, Ch. 4, (McGraw Hill, 1985) R.P. Feynman, Lectures on Physics, Vol. 2, Ch. 22, (Addison Wesley, 1963).

More information

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I SECOND SEMESTER ELECTRONICS - I BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Yousaf Hameed Engr. M.Nasim Khan Dr.Noman Jafri Lecturer

More information

Insulated Gen 2 Schottky Rectifier Module, 300 A

Insulated Gen 2 Schottky Rectifier Module, 300 A VS-QA3FA17 Insulated Gen 2 Schottky Rectifier Module, 3 A PRIMARY CHARACTERISTICS I F(AV) per module at T C = 132 C V R V FM at A, T C = 25 C Package Circuit configuration SOT-227 3 A 17 V.79 V SOT-227

More information

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features 8ETU04PbF Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Lead-Free ("PbF" data sheet) t rr = 60ns I F(AV) = 8Amp V

More information

After performing this experiment, you should be able to:

After performing this experiment, you should be able to: Objectives: After performing this experiment, you should be able to: Demonstrate the strengths and weaknesses of the two basic rectifier circuits. Draw the output waveforms for the two basic rectifier

More information

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO).

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). 1. 1 To study CRO. CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). Apparatus: - C.R.O, Connecting probe (BNC cable). Theory:An CRO is easily the most useful instrument available for testing

More information

High Performance Schottky Rectifier, 400 A

High Performance Schottky Rectifier, 400 A High Performance Schottky Rectifier, 4 A TO-244 Lug terminal anode Lug terminal anode 2 Base common cathode FEATURES 75 C T J operation Center tap module Low forward voltage drop High frequency operation

More information

Lecture Switching Characteristics (Dynamic characteristics) Fig. 3.7 : Turn - on characteristics

Lecture Switching Characteristics (Dynamic characteristics) Fig. 3.7 : Turn - on characteristics Lecture-14 3.4 Switching Characteristics (Dynamic characteristics) Thyristor Turn-ON Characteristics Fig. 3.7 : Turn - on characteristics When the SCR is turned on with the application of the gate signal,

More information

ENGR4300 Test 3A Fall 2002

ENGR4300 Test 3A Fall 2002 1. 555 Timer (20 points) Figure 1: 555 Timer Circuit For the 555 timer circuit in Figure 1, find the following values for R1 = 1K, R2 = 2K, C1 = 0.1uF. Show all work. a) (4 points) T1: b) (4 points) T2:

More information

LM134/LM234/LM334 3-Terminal Adjustable Current Sources

LM134/LM234/LM334 3-Terminal Adjustable Current Sources 3-Terminal Adjustable Current Sources General Description The are 3-terminal adjustable current sources featuring 10,000:1 range in operating current, excellent current regulation and a wide dynamic voltage

More information

SCHOTTKY RECTIFIER [3.150] [.410] Ø 9.65 [.380] 4.95 [.195] 4.70 [.185] 1/4-20 SLOTTED HEX [.620] [.590]

SCHOTTKY RECTIFIER [3.150] [.410] Ø 9.65 [.380] 4.95 [.195] 4.70 [.185] 1/4-20 SLOTTED HEX [.620] [.590] Bulletin PD-.4 rev. E 05/0 SCHOTTKY RECTIFIER 403CNQ...(R) SERIES 400 Amp Major Ratings and Characteristics Characteristics 403CNQ... Units I F(AV) Rectangular 400 A waveform V RRM range 80 to 00 V I FSM

More information

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA FEAURES SYMBOL QUCK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance a a2 3 k 2 V R = 5 V/

More information

Chapter 1: DC circuit basics

Chapter 1: DC circuit basics Chapter 1: DC circuit basics Overview Electrical circuit design depends first and foremost on understanding the basic quantities used for describing electricity: Voltage, current, and power. In the simplest

More information

Chapter 1: DC circuit basics

Chapter 1: DC circuit basics Chapter 1: DC circuit basics Overview Electrical circuit design depends first and foremost on understanding the basic quantities used for describing electricity: voltage, current, and power. In the simplest

More information

MBR2545CT MBRB2545CT MBR2545CT-1

MBR2545CT MBRB2545CT MBR2545CT-1 Bulletin PD-.3 rev. C 0/03 SCHOTTKY RECTIFIER MBR545CT MBRB545CT MBR545CT- 30 Amp Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular waveform 30 A (Per Device) I FRM @ T

More information

500mW High Speed SMD Switching Diode

500mW High Speed SMD Switching Diode 5mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability - Pb free and

More information

( ) ON s inductance of 10 mh. The motor draws an average current of 20A at a constant back emf of 80 V, under steady state.

( ) ON s inductance of 10 mh. The motor draws an average current of 20A at a constant back emf of 80 V, under steady state. 1991 1.12 The operating state that distinguishes a silicon controlled rectifier (SCR) from a diode is (a) forward conduction state (b) forward blocking state (c) reverse conduction state (d) reverse blocking

More information

Distributed Gate Thyristor Type R1280NC21x to R1280NC25x

Distributed Gate Thyristor Type R1280NC21x to R1280NC25x Date:- 01 August 2012 Data Sheet Issue:- 5 Distributed Gate Thyristor Type R1280NC21x to R1280NC25x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,

More information

CHAPTER 2 A SERIES PARALLEL RESONANT CONVERTER WITH OPEN LOOP CONTROL

CHAPTER 2 A SERIES PARALLEL RESONANT CONVERTER WITH OPEN LOOP CONTROL 14 CHAPTER 2 A SERIES PARALLEL RESONANT CONVERTER WITH OPEN LOOP CONTROL 2.1 INTRODUCTION Power electronics devices have many advantages over the traditional power devices in many aspects such as converting

More information

DLVP A OPERATOR S MANUAL

DLVP A OPERATOR S MANUAL DLVP-50-300-3000A OPERATOR S MANUAL DYNALOAD DIVISION 36 NEWBURGH RD. HACKETTSTOWN, NJ 07840 PHONE (908) 850-5088 FAX (908) 908-0679 TABLE OF CONTENTS INTRODUCTION...3 SPECIFICATIONS...5 MODE SELECTOR

More information

SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.

SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8. SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, 1 A Cathode Anode DO-214AC (SMA) PRODUCT SUMMARY Package DO-214AC (SMA) I F(AV) 1 A V R 40 V V F at I F 0.49 V I RM 26 ma at 125 C T J max. 150 C Diode variation Single

More information

LABORATORY 8 DIODE CIRCUITS

LABORATORY 8 DIODE CIRCUITS LABORATORY 8 DIODE CIRCUITS A solid state diode consists of a junction of either dissimilar semiconductors (pn junction diode) or a metal and a semiconductor (Schottky barrier diode). Regardless of the

More information

85HF(R) SERIES 85 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics

85HF(R) SERIES 85 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics 85HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Stud cathode and stud anode version Leaded version available 85 A Types up to 1600V V RRM Typical Applications

More information

Distributed Gate Thyristor Types R0633YC10x to R0633YC12x

Distributed Gate Thyristor Types R0633YC10x to R0633YC12x Date:- 14 Jul, 2015 Data Sheet Issue:- 4 Distributed Gate Thyristor Types R0633YC10x to Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200

More information

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1 Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of

More information

Power Rectifier Diodes (T-Modules), 2200 V, 20 A

Power Rectifier Diodes (T-Modules), 2200 V, 20 A Power Rectifier Diodes (T-Modules), 2200 V, 20 A FEATURES Electrically isolated base plate 2200 V RRM Industrial standard packaging UL approved file E78996 Simplified mechanical designs, rapid assembly

More information

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar

More information

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias Components/ Equipments Required: b) Point-Contact diode in reverse bias Components

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2

More information

PMEG2020CPAS. Symbol Parameter Conditions Min Typ Max Unit Per diode

PMEG2020CPAS. Symbol Parameter Conditions Min Typ Max Unit Per diode 20 January 205 Product data sheet. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for

More information

High Voltage Surface Mountable Input Rectifier Diode, 8 A

High Voltage Surface Mountable Input Rectifier Diode, 8 A High Voltage Surface Mountable Input Rectifier Diode, 8 A 1 DPAK (TO-5AA) PRIMARY CHARACTERISTICS 3 Base cathode + 1 3 Anode - - Anode I F(AV) 8 A V R 8 V, 1 V V F at I F 1.1 V I FSM 15 A T J max. 15 C

More information