50MHz 3.0GHz Gallium Nitride MMIC Power Amplifier
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1 5MHz 3.GHz Gallium Nitride MMIC Power Amplifier AM342WN- AM342WN-SN-R January 219 Rev 1 DESCRIPTION AMCOM s AM342WN- is an ultra-broadband GaN MMIC power amplifier. It has 23dB gain, and >42dBm output power over the.5 to 2GHz band. This MMIC is matched to 5 Ohms at the input but un-matched at the output above 2GHz. The chip is also available in a package (AM342WN-SN-R). Chip and package can give good power up to 5GHz over limited bandwidth by matching the output port externally. The chip and package are RHoS compliant. FEATURES Ultrawide bandwidth from 5MHz to 3GHz Saturated output pulse power P5dB > 42dBm Small signal gain, 23dB Input matched to 5 Ohms APPLICATIONS Software Radio, ECM Instrumentation Gain block CHIP TYPICAL PERFORMANCE (AM342WN-) * A) Bias Conditions**: V dd1 = V dd2 = +28V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 2dB 23dB 26dB Gain Ripple ± 1dB ± 2dB 35dBm 37dBm 1.GHz 34dBm 36dBm 2.GHz 34dBm 38dBm 4dBm 1.GHz 38dBm 4dBm 2.GHz 4dBm P5dB 35% P5dB 1.GHz 32% P5dB 2.GHz 27% Noise Figure (.5 4GHz) < 18dB IP3 (.1 1.1GHz) 46dBm Input Return Loss 15dB 18dB Output Return Loss 5dB Thermal Resistance.95 C/W info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
2 AM342WN- AM342WN-SN-R January 219, Rev 1 B) Bias Conditions**: V dd1 = V dd2 = +5V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1dB ± 3.dB 4dBm 42dBm 1.GHz 37dBm 39dBm 2.GHz 36dBm 42dBm 44dBm 1.GHz 42dBm 44dBm 2.GHz 43dBm P5dB 4% P5dB 1.GHz 35% P5dB 2.GHz 25% Noise Figure (.5 4GHz) < 19dB IP3 (.1-1.1GHz) 48dBm Input Return Loss 15dB 18dB Output Return Loss 5dB Thermal Resistance.95 C/W * Specifications subject to change without notice. ** Data obtained using test fixture shown in this datasheet. Gate biases corresponding to above currents are Vgs1=-2V, Vgs2=-2V, and may vary from lot to lot. *** Input RF power should not exceed.5w (27dBm). ABSOLUTE MAXIMUM RATING (CHIP) Parameters Symbol Rating First & second stage drain voltages Vdd1,2 6V Gate source voltage Vgs1& Vgs2-6V Drain source current Iddq1.5A Drain source current Iddq2.6A Continuous dissipation at 25ºC Pt 6W Channel temperature Tch 175 C Operating temperature Top -55 C to +85 C Storage temperature Tsto -55 C to +135 C Maximum input RF power Pin.5W info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
3 AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE TYPICAL PERFORMANCE * (AM342WN-SN-R) A) Bias Conditions**: V dd1 = V dd2 = +28V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.GHz.5 2.5GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1.5dB ± 2.5dB 36dBm 38dBm 1.GHz 35dBm 37dBm 2.GHz 37dBm 38dBm 4dBm 1.GHz 38dBm 4dBm 2.GHz 4dBm P5dB 34% P5dB 1.GHz 32% P5dB 2.GHz 3% Noise Figure (1 4GHz) < 18dB IP3 (.1 1.1GHz) 46dBm Input Return Loss 15dB 18dB Output Return Loss 1dB Thermal Resistance 1.2 C/W B) Bias Conditions**: V dd1 = V dd2 = +4V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1.5dB ± 2.5dB 38dBm 4dBm 1.GHz 36dBm 38dBm 2.GHz 38dBm 4dBm 42dBm 1.GHz 4dBm 42dBm 2.GHz 42dBm P5dB 38% P5dB 1.GHz 38% P5dB 2.GHz 32% Noise Figure (1 4GHz) < 19dB IP3 (.1 1.1GHz) 48dBm Input Return Loss 15dB 17dB Output Return Loss 1dB Thermal Resistance 1.2 C/W * Specifications subject to change without notice. ** Data obtained using test fixture shown in this datasheet. Gate biases corresponding to above currents are Vgs1=-2V, Vgs2=-2V, and may vary from lot to lot. *** Input RF power should not exceed.5w (27dBm). info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
4 AM342WN- AM342WN-SN-R January 219, Rev 1 ABSOLUTE MAXIMUM RATING (PACKAGE) Parameters Symbol Rating First & second stage drain voltages Vdd1,2 5V Gate source voltage Vgs1& Vgs2-6V Drain source current Iddq1.5A Drain source current Iddq2.6A Continuous dissipation at 25ºC Pt 5W Channel temperature Tch 175 C Operating temperature Top -55 C to +85 C Storage temperature Tsto -55 C to +135 C Maximum input RF power Pin.5W info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
5 Gain & Return Losses (db) AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 SMALL SIGNAL DATA (Chip) Chip S-Parameters (V dd1,2=28v, 4V & 5V, ddq1=.4a, I ddq2=.5a) 4 28V / 4mA / 5mA 4 4V / 4mA / 5mA Gain & Return Losses (db) Output RL Gain Gain & Return Losses (db) Gain Output RL -3 Input RL -3 Input RL a) V dd1,2=28v b) V dd1,2=4v V / 4mA / 5mA Gain 1-1 Output RL -2-3 Input RL c) V dd1,2=5v info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
6 AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 POWER DATA (Chip)* 5 P1dB (28V/4mA/5mA) 5 P5dB (28V/4mA/5mA) P1dB P5dB P1dB (4V/4mA/5mA) 5 P5dB (4V/4mA/5mA) P1dB P5dB P1dB (5V/4mA/5mA) 5 P5dB (5V/4mA/5mA) P1dB P5dB * Chip is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2.5GHz do not operate above 2.5GHz at power saturation at > +45V to avoid failure. info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
7 Gain & Return Losses (db) AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 SMALL SIGNAL DATA (Packaged) Package S-Parameters (V dd1,2=28v, 4V & 5V, ddq1=.4a, I ddq2=.5a) 4 28V / 4mA / 5mA 4 4V / 4mA / 5mA 3 3 Gain & Return Losses (db) Output RL Input RL Gain Gain & Return Losses (db) Output RL Input RL Gain a) V dd1,2=28v b) V dd1,2=4v V / 4mA / 5mA Gain Output RL Input RL b) V dd1,2=5v info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
8 AM342WN- AM342WN-SN-R January 219, Rev 1 NOISE DATA (Package) 35 Noise at +28V/4mA/5mA 35 Noise at +4V/4mA/5mA 3 3 Noise Figure (db) Noise Figure (db) info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
9 AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 POWER DATA (Packaged)* 5 P1dB (28V/4mA/5mA) 5 P5dB (28V/4mA/5mA) P1dB P5dB P1dB (4V/4mA/5mA) 5 P5dB (4V/4mA/5mA) P1dB P5dB P1dB (5V/4mA/5mA) 5 P5dB (5V/4mA/5mA) 4 P1dB P5dB * MMIC is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2GHz do not operate above 2GHz at saturation at > +4V to avoid failure. info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
10 AM342WN- AM342WN-SN-R January 219, Rev 1 CHIP OUTLINE (AM342WN-) Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-2V 3 Vdd1 +4V 4 Vgs2-2V 5 Vgg2 +4V 6 Vdd2 & RF out +4V 7 Vdd2 & RF out +4V 8 Vdd2 & RF out +4V 9 Vdd2 & RF out +4V 1 Vgg2 +6V 11 Vgs2-2V 12 Vds1 +4V 13 Vgs1-2V Gate biases are for reference only and may vary from lot to lot info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
11 AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE OUTLINE (AM342WN-SN-R) Dimensions in inches Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-2V 3 Vdd1 +4V 4 Vgs2-2V 5 Vgg2 +4V 6 Vdd2 & RF out +4V 7 Vdd2 & RF out +4V 8 Vdd2 & RF out +4V 9 Vdd2 & RF out +4V 1 Vgg2 +4V 11 Vgs2-2V 12 Vds1 +4V 13 Vgs1-2V Gate biases are for reference only and may vary from lot to lot info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
12 AM342WN- AM342WN-SN-R January 219, Rev 1 CHIP TEST CIRCUIT for.5 3GHz Notes: 1- Use epoxy to mount PCB, and Eutectic soldering to mount chip 2- C1=1uF(Dipped Radial Tantalum),C4=1uF(Aluminum Electrolytic) C2=1pF, C3=2pF, R1=5ohms, R2=1ohms, R3=5ohms L1=2nH 3- All SMT Caps & Resistors are 42 size Important Notes: 1- The second stage positive bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (1nH is adequate). 2- Input RF power should not exceed.5w 3- Recommended current biases are 4mA and 5mA for the first stage and second stage respectively. Gate biases of -2V are for reference only. Vgs1& Vgs2 could be adjusted to vary the currents going thru the first stage (Vdd1 pin) and the second stage (Vdd2 pin) respectively. Vgg2 to be applied thru 1 Ohms should be equal to Vdd2. 4- Do not apply Vdd1& Vdd2 without proper negative voltages on Vgs1& Vgs2. Otherwise MMIC would fail due to excess heat. 5- Chip is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2.5GHz do not operate above 2.5GHz at power saturation at > +45V to avoid failure. info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
13 AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE TEST CIRCUIT for.5 3GHz Important Notes: 1- The second stage positive bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (1nH is adequate). 2- Input RF power should not exceed.5w 3- Recommended current biases are 4mA and 5mA for the first stage and second stage respectively. Gate biases of -2V are for reference only. Vgs1& Vgs2 could be adjusted to vary the currents going thru the first stage (Vdd1 pin) and the second stage (Vdd2 pin) respectively. Vgg2 to be applied thru 1 Ohms should be equal to Vdd2. 4- Do not apply Vdd1& Vdd2 without proper negative voltages on Vgs1& Vgs2. Otherwise MMIC would fail due to excess heat. Notes: 1- Use epoxy to mount PCB 2- C1=1uF, C2=1pF, R1=5ohms, R2=1ohms, R3=5ohms, R4=5, L1=1nH 3- All SMT Caps & Resistors are 63 size 4- Use Test Block No. D MMIC is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2GHz do not operate above 2GHz at saturation at > +4V to avoid failure. info@amcomusa.com Tel. (31) Fax. (31) Website: 41 Professional Drive, Gaithersburg, MD 2879
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v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
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Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
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1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN
More informationGain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
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Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 5 ma Small die size Vdd Description The CMD7 is a broadband MMIC low noise amplifier
More informationESD Sensitive Component!!
5 MHz LOW NOISE AMPLIFIER WHM3AE 1 REV E WHM3AE LNA is a low noise figure, wideband, and high linear SMT packaged amplifier with exceptional gain flatness design. The amplifier offers typical.7 db noise
More informationCMD GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
More informationPreliminary Datasheet Revision: January 2016
Preliminary Datasheet Revision: January 216 Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios SATCOM Terminals X = 3.65mm Y = 2.3mm Product Features RF frequency: 27 to 31 GHz
More informationNPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-931SM The ADM-26-931SM is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The ADM-26-931SM is designed to provide optimal LO drive for T3 mixers.
More information>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099
9 1 11 12 13 14 1 16 32 GND 31 29 28 27 26 FEATURES High saturated output power (PSAT):. dbm typical High small signal gain: 18. db typical High power added efficiency (PAE): 69% typical Instantaneous
More informationHMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.
v2. Typical Applications The HMC486LP5(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated Power: +33 dbm @ 2% PAE Output IP3:
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
The is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The is designed to provide optimal LO drive for T3 mixers. Typically, ADM-26-2931SM provides. db
More informationMMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-12-931SM The ADM-12-931SM is a small, low power, and economical T3 driver or T3A pre-amplifier. It is a GaAs PHEMT distributed amplifier in a 3mm QFN surface mount package. The ADM-12-931SM can provide
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
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ADM-126-83SM The ADM-126-83SM is a broadband, efficient GaAs PHEMT distributed amplifier with an integrated bias tee in a 4mm QFN surface mount package, designed to provide efficient LO drive for T3 mixers.
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2-2 GHz Driver Amplifier Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver
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Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
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v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated
More informationPARAMETER TEST CONDITIONS TYPICAL DATA UNITS Frequency Range 5-18 GHz 6-8 GHz GHz. 18 GHz GHz GHz
FEATURES Wide Band: 5 to GHz NF (ext match): 3.4 db @ 6 GHz 3.0 db @ GHz 3.7 db @ GHz P-1dB: 21 dbm OIP3: 29 dbm Gain: 19 db Bias Condition: VDD = 4.5V IDD = 135 ma 50-Ohm On-chip Matching Unconditionally
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Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.38 POWER AMPLIFIER, 2-2 GHz Typical
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More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
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Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE
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More informationFeatures. = +25 C, Vdd =+28V, Idd = 850 ma [1]
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- GHz Distributed Low Noise Amplifier Features Wide bandwidth Single positive supply voltage Low noise figure Small die size Description Applications Wideband communication systems Point-to-point radios
More informationAdvance Datasheet Revision: April 2015
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More information= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
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Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More informationCMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
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