DISCRETE SEMICONDUCTORS DATA SHEET. BTA225 series B Three quadrant triacs high commutation

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET high commutation September 997

2 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope intended for use in circuits where high static and BTA5-5B 6B 8B dynamic dv/dt and high di/dt can V DRM Repetitive peak off-state V occur loads. These devices will voltages commutate the full rated rms current I T(RMS) RMS on-state current A at the imum rated junction I TSM Non-repetitive peak on-state A temperature, without the aid of a snubber. current PINNING - TOAB PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal tab T T 3 gate tab main terminal 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DRM Repetitive peak off-state V voltages I T(RMS) RMS on-state current full sine wave; - 5 A T mb 9 C I TSM Non-repetitive peak full sine wave; on-state current T j = 5 C prior to surge t = ms - 9 A t = 6.7 ms - 9 A I t I t for fusing t = ms - 8 A s di T /dt Repetitive rate of rise of I TM = 3 A; I G =. A; A/µs on-state current after di G /dt =. A/µs triggering I GM Peak gate current - A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any ms -.5 W period T stg Storage temperature -4 5 C T j Operating junction - 5 C temperature Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 5 A/µs. September 997 Rev.

3 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - -. K/W junction to mounting base half cycle K/W R th j-a Thermal resistance in free air K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = V; I T =. A T+ G+ 8 5 T+ G- T- G I L Latching current V D = V; I GT =. A T+ G+ T+ G T- G I H Holding current V D = V; I GT =. A V T On-state voltage I T = 3 A V V GT Gate trigger voltage V D = V; I T =. A V I D Off-state leakage current V D = 4 V; I T =. A; T j = 5 C V D = V DRM() ; T j = 5 C V DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; 4 - V/µs off-state voltage exponential waveform; gate open circuit di com /dt Critical rate of change of commutating current V DM = 4 V; T j = 5 C; I T(RMS) = 5 A; without snubber; gate open circuit A/ms t gt Gate controlled turn-on I TM = 3 A; V D = V DRM() ; I G =. A; - - µs time di G /dt = 5 A/µs Device does not trigger in the T-, G+ quadrant. September Rev.

4 Philips Semiconductors Ptot / W 4 BTA4 Tmb() / C 85 IT(RMS) / A 3 BTA4 3 = C IT(RMS) / A Fig.. Maximum on-state dissipation, P tot, versus rms on-state current, I T(RMS), where α = conduction angle Tmb / C Fig.4. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb. ITSM / A BTA5 IT(RMS) / A 5 BTA4 4 di /dt limit T 3 I T ITSM T time Tj initial = 5 C us us ms ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T mb 9 C. ITSM / A 5 BTA4 I T T I TSM time.6.4 VGT(Tj) VGT(5 C) BT36 Tj initial = 5 C Number of cycles at 5Hz Fig.3. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September Rev.

5 3.5 IGT(Tj) IGT(5 C) BTA6 T+ G+ T+ G- T- G- IT / A 8 Tj = 5 C Tj = 5 C Vo =.73 V Rs =.5 ohms BTA4 typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j VT / V Fig.. Typical and imum on-state characteristic. 3 IL(Tj) IL(5 C) TRIAC Zth j-mb (K/W) BTA4.5 unidirectional bidirectional.5.. P D t p.5 t Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-mb, versus pulse width t p. 3 IH(Tj) IH(5C) TRIAC dicom/dt (A/ms) BTA Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j Fig.. Typical, critical rate of change of commutating current di com /dt versus junction temperature. September Rev.

6 MECHANICAL DATA Dimensions in mm Net Mass: g 4,5,3 3,7,3,8 5,9 min 5,8 3, not tinned,3 (x) 3,54,54 3, 3,5 min,9 (3x),6,4 Notes. Refer to mounting instructions for TO envelopes.. Epoxy meets UL94 V at /8". Fig.3. TOAB; pin connected to mounting base. September Rev.

7 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September Rev.

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