DISCRETE SEMICONDUCTORS DATA SHEET. BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation

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1 DISCRETE SEMICONDUCTORS DATA SHEET BTA4S series D, E and F BTA4M series D, E and F guaranteed commutation December 998

2 BTA4S series D, E and F BTA4M series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting, intended for use in BTA4S (or BTA4M) D 6D motor control circuits or with other BTA4S (or BTA4M) E 6E 8E highly inductive loads. These devices BTA4S (or BTA4M) F 6F 8F balance the requirements of V DRM Repetitive peak 6 8 commutation performance and gate offstate voltages V sensitivity. The "sensitive gate" E I T(RMS) RMS onstate current A series and "logic level" D series are I TSM Nonrepetitive peak onstate A intended for interfacing with low power current drivers, including micro controllers. PINNING SOT48 PIN CONFIGURATION SYMBOL PIN Standard Alternative NUMBER S M tab MT gate MT MT T T gate MT tab MT MT G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 4). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 6 8 V DRM Repetitive peak offstate voltages 6 8 V I T(RMS) RMS onstate current full sine wave; T mb 7 C 4 A I TSM Nonrepetitive peak full sine wave; onstate current T j = C prior to surge t = ms t = 6.7 ms 7 A A I t I t for fusing t = ms. A s di T /dt Repetitive rate of rise of I TM = 6 A; I G =. A; A/µs onstate current after di G /dt =. A/µs triggering I GM Peak gate current A V GM Peak gate voltage V P GM Peak gate power W P G(AV) Average gate power over any ms period. W T stg Storage temperature 4 C T j Operating junction temperature C Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed 6 A/µs. December 998 Rev.

3 BTA4S series D, E and F BTA4M series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th jmb Thermal resistance full cycle. K/W junction to mounting base half cycle.7 K/W R th ja Thermal resistance pcb (FR4) mounted; footprint as in Fig.4 7 K/W junction to ambient STATIC CHARACTERISTICS T j = C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA4S (or BTA4M)...D...E...F I GT Gate trigger current V D = V; I T =. A T+ G+ ma T+ G T G ma ma I L Latching current V D = V; I GT =. A T+ G+ T+ G ma ma T G 6 ma I H Holding current V D = V; I GT =. A 6 ma V T V GT Onstate voltage Gate trigger voltage I T = A V D = V; I T =. A V V V D = 4 V; I T =. A;..4 V T j = C I D Offstate leakage V D = V DRM(max) ; T j = C.. ma current DYNAMIC CHARACTERISTICS T j = C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA4S (or BTA4M)...D...E...F dv D /dt Critical rate of rise of V DM = 67% V DRM(max) ; V/µs offstate voltage T j = C; exponential waveform; gate open circuit di com /dt Critical rate of change V DM = 4 V; T j = C;... A/ms of commutating current I T(RMS) = 4 A; dv com /dt = V/µs; gate open circuit di com /dt Critical rate of change V DM = 4 V; T j = C;. A/ms of commutating current I T(RMS) = 4 A; dv com /dt =.V/µs; gate open circuit t gt Gate controlled turnon I TM = A; V D = V DRM(max) ; µs time I G =. A; di G /dt = A/µs Device does not trigger in the T, G+ quadrant. December 998 Rev.

4 Philips Semiconductors BTA4S series D, E and F BTA4M series D, E and F Ptot / W 8 BT6 Tmb(max) / C IT(RMS) / A BT = C 9 4 IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle. Tmb / C Fig.4. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb. ITSM / A BT6 IT(RMS) / A BT6 IT ITSM T time Tj initial = C max 8 di /dt limit T T G+ quadrant 6 4 us us ms ms ms T / s Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = Hz; T mb 7 C. ITSM / A BT6 IT T ITSM time.6.4 VGT(Tj) VGT( C) BT6 Tj initial = C max..8.6 Number of cycles at Hz Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = Hz..4 Tj / C Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT ( C), versus junction temperature T j. December Rev.

5 BTA4S series D, E and F BTA4M series D, E and F. IGT(Tj) IGT( C) BTA4 T+ G+ T+ G T G IT / A Tj = C Tj = C Vo =.7 V Rs =.9 ohms 8 BT6 typ max Tj / C Fig.7. Normalised gate trigger current I GT (T j )/ I GT ( C), versus junction temperature T j.... VT / V Fig.. Typical and maximum onstate characteristic. IL(Tj) IL( C) TRIAC Zth jmb (K/W) BT6 unidirectional. bidirectional.. P D t p. Tj / C Fig.8. Normalised latching current I L (T j )/ I L ( C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jmb, versus pulse width t p. t IH(Tj) IH(C) TRIAC... Tj / C Fig.9. Normalised holding current I H (T j )/ I H ( C), versus junction temperature T j. December 998 Rev.

6 BTA4S series D, E and F BTA4M series D, E and F MECHANICAL DATA Dimensions in mm seating plane Net Mass:. g 6.7 max tab..8 max.9 max.4 6. max.4 max 4 min 4.6. min..8 (x) MOUNTING INSTRUCTIONS Dimensions in mm.8 max (x).. Fig.. SOT48 : centre pin connected to tab Fig.. SOT48 : minimum pad sizes for surface mounting. Notes. Plastic meets UL94 V at /8". December Rev.

7 BTA4S series D, E and F BTA4M series D, E and F DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December Rev.

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