DISCRETE SEMICONDUCTORS DATA SHEET. age MBD128. PBSS4240Y 40 V low V CEsat NPN transistor. Product specification 2001 Jul 13

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1 DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low V CEsat NPN transistor 2001 Jul 13

2 FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V CEO collector-emitter voltage 40 V I CM peak collector current 3 A R CEsat equivalent on-resistance <200 mω PINNING APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers). PIN 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector DESCRIPTION DESCRIPTION NPN low V CEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. handbook, halfpage , 2, 5, 6 MARKING 4 TYPE NUMBER MARKING CODE (1) PBSS4240Y 42* Top view MAM441 Note 1. * = p: made in Hongkong. * = t: made in Malaysia. Fig.1 Simplified outline (SOT363; SC-88) and symbol Jul 13 2

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 40 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 2 A I CM peak collector current 3 A I BM peak base current 300 ma P tot total power dissipation T amb 25 C; note mw T amb 25 C; note mw T stg storage temperature C T j junction temperature 150 C T amb operating ambient temperature C Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm 2. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to in free air; note K/W ambient in free air; note K/W Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm Jul 13 3

4 CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current V CB = 30 V; I E =0 100 na V CB = 30 V; I E = 0; T j = 150 C 50 µa I EBO emitter-base cut-off current V EB =4V; I C =0 100 na h FE DC current gain V CE =2V; I C = 100 ma V CE =2V; I C = 500 ma V CE =2V; I C = 1 A V CE =2V; I C = 2 A V CEsat collector-emitter saturation I C = 100 ma; I B =1mA mv voltage I C = 500 ma; I B =50mA mv I C = 750 ma; I B =15mA mv I C = 1 A; I B =50mA mv I C = 2 A; I B = 200 ma mv R CEsat equivalent on-resistance I C = 500 ma; I B = 50 ma; note <200 mω V BEsat base-emitter saturation voltage I C = 2 A; I B = 200 ma 1.1 V V BEon base-emitter turn-on voltage V CE =2V; I C = 100 ma 0.75 V C c collector capacitance V CB = 10 V; I E =I e = 0; f = 1 MHz pf f T transition frequency I C = 100 ma; V CE = 10 V; f = 100 MHz MHz Note 1. Pulse test: t p 300 µs; δ Jul 13 4

5 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D B E A X y H E v M A Q pin 1 index A A1 c e1 bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max mm bp c D E e e 1 H E L p Q v w y OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT363 SC Jul 13 5

6 DATA SHEET STATUS DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Jul 13 6

7 NOTES 2001 Jul 13 7

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