DISCRETE SEMICONDUCTORS DATA SHEET. PUMT1 Dual PNP transistor Dec 07. Preliminary specification File under Discrete Semiconductors, SC04
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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC Dec 07
2 FEATURES Two transistors in one SC70 package Reduces number of components and boardspace No mutual interference between the transistors. APPLICATIONS General purpose switching Small signal amplification. DESCRIPTION Two PNP transistors in a plastic six lead SC70-6 (S-mini) package. handbook, halfpage PINNING PIN DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 TR2 TR Top view MAM224 Marking code: FF. Fig.1 Simplified outline (SC70-6), pin configuration and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 100 ma h FE DC current gain I C = 1 ma; V CE = 6 V 120 f T transition frequency I C = 2 ma; V CE = 12 V; f = 100 MHz; T amb =25 C 100 MHz Per package P tot total power dissipation up to T amb =25 C 300 mw 1995 Dec 07 2
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 100 ma P tot total power dissipation 200 mw T amb operating ambient temperature C T stg storage temperature C T j junction temperature 150 C Per package P tot total power dissipation up to T amb =25 C; note mw THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note K/W Note to the Limiting values and Thermal characteristics 1. In accordance with standard mounting conditions SC70, six lead version. ELECTRICAL CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V (BR)CBO collector-base breakdown voltage open emitter; I C = 50 µa; I E =0 50 V V (BR)CEO collector-emitter breakdown voltage open base; I C = 1 ma; I B =0 40 V V (BR)EBO emitter-base breakdown voltage open collector; I E = 50 µa; I C =0 5 V V CEsat collector-emitter saturation voltage I C = 50 ma; I B = 5 ma; note mv I CBO collector-base cut-off current V CB = 30 V; I E =0 100 na V CB = 30 V; I E = 0; T j = 150 C 10 µa I EBO emitter-base cut-off current V EB = 4 V; I C =0 100 na h FE DC current gain I C = 1 ma; V CE = 6 V 120 f T transition frequency I C = 2 ma; V CE = 12 V; f = 100 MHz 100 MHz C c collector capacitance I E =i e = 0; V CB = 12 V; f = 1 MHz 2.2 pf Note to the Electrical characteristics 1. Pulse test: t p 300 µs; δ Dec 07 3
4 PACKAGE OUTLINE A M B B (6x) MSA M A Dimensions in mm. Fig.2 SC70-6. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Dec 07 4
5 NOTES 1995 Dec 07 5
6 NOTES 1995 Dec 07 6
7 NOTES 1995 Dec 07 7
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DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP50-04W General purpose PIN diode. Product specification 2001 Jan 29
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 2001 Jan 29 FEATURES Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance. APPLICATIONS
DATA SHEET. BRY39 Programmable unijunction transistor/ Silicon controlled switch DISCRETE SEMICONDUCTORS Jul 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D082 Programmable unijunction transistor/ Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 FEATURES Programmable unijunction transistor.
DATA SHEET. 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS. Product specification 2001 Jan 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MD102 2001 Jan 18 FEATURES PINNING Low forward voltage Very small SMD plastic package Low diode capacitance. APPLICATIONS UHF mixers Sampling circuits
DATA SHEET. BZV55 series Voltage regulator diodes DISCRETE SEMICONDUCTORS May 21. Product specification Supersedes data of 1996 Apr 26
DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 Supersedes data of 1996 Apr 26 1999 May 21 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2% and approx. ±5% Working
DATA SHEET. PUMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 May 6.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP general purpose transistors Supersedes data of 2002 May 6 2004 Oct 15 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V) Reduces
DISCRETE SEMICONDUCTORS DATA SHEET. age MBD128. PBSS4240Y 40 V low V CEsat NPN transistor. Product specification 2001 Jul 13
DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low V CEsat NPN transistor 2001 Jul 13 FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1999 Apr 26 2001 Feb 20 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DATA SHEET. BZA408B Quadruple bidirectional ESD transient voltage suppressor Oct 15. Product specification Supersedes data of 1998 Jun 05
DATA SHEET book, halfpage M3D302 Quadruple bidirectional ESD transient Supersedes data of 1998 Jun 05 1998 Oct 15 FEATURES ESD rating >15 kv, according to IEC1000-4-2 SOT457 surface mount package Non-clamping
DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation
DISCRETE SEMICONDUCTORS DATA SHEET M3D173. BFR505T NPN 9 GHz wideband transistor. Product specification Supersedes data of 2000 Mar 14.
DISCRETE SEMICONDUCTORS DATA SHEET M3D73 BFRT Supersedes data of Mar 4 May 7 BFRT FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures
DISCRETE SEMICONDUCTORS DATA SHEET M3D173. PRF949 UHF wideband transistor. Product specification Supersedes data of 1999 Nov 02.
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 Supersedes data of 1999 Nov 2 2 Apr 3 FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT416 (SC-75)
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAP50-02 General purpose PIN diode. Product specification 2001 Apr 17
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 2001 Apr 17 FEATURES Low diode capacitance Low diode forward resistance. APPLICATIONS General RF applications. PINNING PIN DESCRIPTION 1 cathode 2 anode DESCRIPTION
DISCRETE SEMICONDUCTORS DATA SHEET. LLE16120X NPN microwave power transistor Feb 18. Product specification Supersedes data of November 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 994 997 Feb 8 FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated
DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLV920 UHF power transistor Nov 17. Product specification Supersedes data of 1995 Apr 10
DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of 1995 Apr 1 1997 Nov 17 FEATURES Internal input matching to achieve high power gain and easy design of wideband circuits Emitter ballasting resistors
DISCRETE SEMICONDUCTORS DATA SHEET. LFE15600X NPN microwave power transistor Feb 19. Product specification Supersedes data of January 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of January 1994 1997 Feb 19 FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated
DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP65-05W Silicon PIN diode. Product specification 2001 May 07
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 2001 May 07 FEATURES Two elements in common cathode configuration High voltage, current controlled RF resistor for RF switches Low diode capacitance
DATA SHEET. BZB784 series Voltage regulator double diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 May 24.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 Supersedes data of 2000 May 24 2001 Feb 27 FEATURES Total power dissipation: max. 350 mw Approx. 5% V Z tolerance Working voltage range: nom. 2.4
DATA SHEET. TDA8771A Triple 8-bit video Digital-to-Analog Converter (DAC) INTEGRATED CIRCUITS Jan 25
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC02 1996 Jan 25 FEATURES 8-bit resolution Sampling rate up to 35 MHz Internal reference voltage regulator No deglitching circuit required
DATA SHEET. BLV861 UHF linear push-pull power transistor DISCRETE SEMICONDUCTORS Jan 16. Product specification Supersedes data of 1998 Jan 14
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D99 UHF linear push-pull power transistor Supersedes data of 1998 Jan 14 1998 Jan 16 FEATURES Double stage internal input and output matching networks
DATA SHEET. BZA462A Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS May 25
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 Quadruple ESD transient voltage suppressor Supersedes data of 1998 Oct 30 1999 May 25 FEATURES PINNING ESD rating >15 kv, according to IEC1000-4-2
DISCRETE SEMICONDUCTORS DATA SHEET. BLV859 UHF linear push-pull power transistor Jul 26. Product specification Supersedes data of 1995 Oct 04
DISCRETE SEMICONDUCTORS DATA SHEET UHF linear push-pull power transistor Supersedes data of 1995 Oct 4 1996 Jul 26 FEATURES Double internal input and output matching for an optimum wideband capability
DATA SHEET. TDA7056B 5 W mono BTL audio amplifier with DC volume control INTEGRATED CIRCUITS Aug 15
INTEGRATED CIRCUITS DATA SHEET 5 W mono BTL audio amplifier with DC Supersedes data of 1996 May 28 File under Integrated Circuits, IC01 1997 Aug 15 FEATURES DC Few external components Mute mode Thermal
DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 FEATURES Low current (max. 200 ma) High voltage (max. 300
DATA SHEET. PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS. Product specification 2002 Nov 07
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 2002 Nov 07 FEATURES General purpose transistor and resistor equipped transistor in one package 100 ma collector current 50 V collector-emitter
DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistors Supersedes data of 2001 Sep 25 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 1.2 mm ultra thin package
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low V CEsat NPN/PNP transistor 2001 Dec 13 FEATURES 600 mw total power dissipation Low collector-emitter saturation voltage High
DATA SHEET. BC516 PNP Darlington transistor DISCRETE SEMICONDUCTORS Apr 23. Product specification Supersedes data of 1997 Apr 16.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Apr 16 1999 Apr 23 FEATURES High current (max. 500 ma) Low voltage (max. 30 V) Very high DC current gain (min. 30000). APPLICATIONS
DATA SHEET. BF450 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jul 11 2004 Nov 11 FEATURES Low current (max. 25 ma) Low voltage (max. 40 V). APPLICATIONS HF and IF stages in radio receivers
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D168. S1 series SMA controlled avalanche rectifiers. Product specification 2000 Feb 14
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 2000 Feb 14 FEATURES Glass passivated High maximum operating temperature Ideal for surface mount automotive applications Low leakage current Excellent
DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 08 FEATURES Low current (max. 100 ma) Low voltage (max. 50 V). APPLICATIONS General purpose switching
The BLF246 as an H.F.-S.S.B. amplifier
APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 23 2 1 SUMMARY This report gives information
DATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 08 2004 Oct 28 FEATURES PINNING Low current (max. 300 ma) High voltage (max. 150 V). APPLICATIONS General purpose switching
DISCRETE SEMICONDUCTORS DATA SHEET. BFG35 NPN 4 GHz wideband transistor. Product specification Supersedes data of 1995 Sep 12.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1995 Sep 12 1999 Aug 24 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications.
DATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 2003 Oct 16 2004 Nov 05 FEATURES Low current (max. 500 ma) Low voltage (max. 55 V) High DC current gain. APPLICATIONS General
DISCRETE SEMICONDUCTORS DATA SHEET M3D390. BLF1047 UHF power LDMOS transistor. Preliminary specification Supersedes data of 1999 July 01.
DISCRETE SEMICONDUCTORS DATA SHEET M3D390 Supersedes data of 1999 July 01 2000 Feb 02 FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing
DATA SHEET. KMI15/2 Integrated rotational speed sensor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jun 26.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D281 Supersedes data of 2000 Jun 26 2000 Sep 05 FEATURES Digital current output signal Zero speed capability Wide air gap Wide temperature range Insensitive
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification.
DATA SHEET. BF324 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 07.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jul 07 2004 Nov 05 FEATURES Low current (max. 25 ma) Low voltage (max. 30 V). APPLICATIONS RF stages in FM front-ends in
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. PBR941B UHF wideband transistor. Preliminary specification 2001 Jan 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 21 Jan 18 FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT23 PIN 1 base 2 emitter
DATA SHEET. BFG92A/X NPN 5 GHz wideband transistor Sep 23. Product specification Supersedes data of 1995 Sep 12. book, halfpage M3D071
DATA SHEET book, halfpage M3D7 BFG9A/X Supersedes data of 99 Sep 998 Sep 3 BFG9A/X FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications