DATA SHEET. BFT92W PNP 4 GHz wideband transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS. May 1994

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1 DISCRETE SEMICONDUCTORS DATA SHEET BFT9W File under Discrete Semiconductors, SC4 May 994 Philips Semiconductors

2 BFT9W FEATURES DESCRIPTION High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. Silicon PNP transistor in a plastic, SOT33 (S-mini) package. The BFT9W uses the same crystal as the SOT3 version, BFT9. handbook, columns 3 APPLICATION It is intended as a general purpose transistor for wideband applications up to GHz. PINNING PIN DESCRIPTION base emitter 3 collector Top view MBC87 Marking code: W. Fig. SOT33. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V I C collector current (DC) 3 ma P tot total power dissipation up to T s =93 C; note 3 mw h FE DC current gain I C = ma; V CE = V C re feedback capacitance I C = ; V CB = V; f = MHz. pf f T transition frequency I C = ma; V CE = V; 4 GHz f = MHz G UM maximum unilateral power gain I C = ma; V CE = V; 7 db f = MHz; T amb = C F noise figure I C = ma; V CE = V;. db f = MHz T j junction temperature C Note. T s is the temperature at the soldering point of the collector pin. May 994

3 BFT9W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector V I C collector current (DC) ma P tot total power dissipation up to T s =93 C; note 3 mw T stg storage temperature 6 + C T j junction temperature C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to T s =93 C; note 9 K/W Note to the Limiting values and Thermal characteristics. T s is the temperature at the soldering point of the collector pin. CHARACTERISTICS T j = C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = V na h FE DC current gain I C = ma; V CE = V f T transition frequency I C = ma; V CE = V; 4 GHz f = MHz; T amb = C C c collector capacitance I E =i e = ; V CB = V;.6 pf f = MHz C e emitter capacitance I C =i c = ; V EB =. V;.7 pf f = MHz C re feedback capacitance I C = ; V CB = V; f = MHz. pf G UM maximum unilateral power gain; note I C = ma; V CE = V; f = MHz; T amb = C I C = ma; V CE = V; f = GHz; T amb = C F noise figure Γ s = Γ opt ; I C = ma; V CE = V; f = MHz Γ s = Γ opt ; I C = ma; V CE = V; f = GHz 7 db db. db 3 db Note. G UM is the maximum unilateral power gain, assuming s is zero. G UM = s log ( s ) ( s ) db. May 994 3

4 BFT9W 4 MLB4 6 MLB4 Ptot (mw) h FE 3 4 T ( o s C) I C (ma) 3 V CE = V; T j = C. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current, typical values. Cre MLB4 6 MLB43 (pf).8.6 f T (GHz) 4 V = CE V V V CB (V) I C (ma) I C = ; f = MHz. f = MHz; T amb = C. Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. Fig. Transition frequency as a function of collector current, typical values. May 994 4

5 BFT9W 3 MLB44 3 MLB4 gain (db) gain (db) MSG G UM MSG G UM I C (ma) 3 I C (ma) 3 f = MHz; V CE = V. MSG = maximum stable gain. f = GHz; V CE = V. MSG = maximum stable gain. Fig.6 Gain as a function of collector current, typical values. Fig.7 Gain as a function of collector current, typical values. gain (db) 4 G UM MLB46 gain (db) 4 G UM MLB47 3 MSG 3 MSG G max G max 3 4 f (MHz) 3 4 f (MHz) I C = ma; V CE = V. MSG = maximum stable gain. I C = ma; V CE = V. MSG = maximum stable gain. Fig.8 Gain as a function of frequency, typical values. Fig.9 Gain as a function of frequency, typical values. May 994

6 BFT9W 9 o. 3 o GHz.4. 8 o.. o 4 MHz. 3 o. 9 o MLB48. V CE = V; I C = ma. Fig. Common emitter input reflection coefficient (s ), typical values. 9 o 3 o 8 o 4 MHz GHz o 3 o 9 o MLB49 V CE = V; I C = ma. Fig. Common emitter forward transmission coefficient (s ), typical values. May 994 6

7 BFT9W 9 o 3 o 3 GHz 8 o MHz o 3 o 9 o MLB V CE = V; I C = ma. Fig. Common emitter reverse transmission coefficient (s ), typical values. 9 o. 3 o o.. 4 MHz o. 3 GHz 3 o. 9 o MLB. V CE = V; I C = ma. Fig.3 Common emitter output reflection coefficient (s ), typical values. May 994 7

8 BFT9W 6 handbook, halfpage MLB 6 handbook, halfpage MLB3 F (db) 4 GHz MHz F (db) 4 I C = ma ma ma ma I C (ma) 3 f (MHz) 4 V CE = V. V CE = V. Fig.4 Minimum noise figure as a function of collector current, typical values. Fig. Minimum noise figure as a function of frequency, typical values. May 994 8

9 BFT9W 9 o. 3 o o... F min =. db Γopt o.4. F = 3 db. F = 4 db F = db 3 o. 9 o MLB4. f = MHz; V CE = V; I C = ma; Z o =Ω. Fig.6 Common emitter noise figure circles, typical values. 9 o. 3 o F min = 3 db Γopt.4. 8 o.. F = 3. db o F = 4 db. F = db 3 o. 9 o MLB. f = GHz; V CE = V; I C = ma; Z o =Ω. Fig.7 Common emitter noise figure circles, typical values. May 994 9

10 BFT9W SPICE parameters for the BFT9W crystal SEQUENCE No. PARAMETER VALUE UNIT IS 437. aa BF NF.9 4 VAF 3.39 V IKF 99.3 ma 6 ISE 87. fa 7 NE BR NR. VAR 3.93 V IKR.8 ma ISC 3.88 fa 3 NC RB. Ω IRB. µa 6 RBM. Ω 7 RE. Ω 8 RC. Ω 9 () XTB. () EG. ev () XTI 3. CJE ff 3 VJE 6. mv 4 MJE.37 TF 7.49 ps 6 XTF.34 7 VTF.6 mv 8 ITF. ma 9 PTF 4. deg 3 CJC 937. ff 3 VJC mv 3 MJC. 33 XCJC.6 34 TR 8.4 ns 3 () CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 () VJS 7. mv 37 () MJS. 38 FC.768 Note. These parameters have not been extracted, the default values are shown. handbook, halfpage B L Cbe L B QL B = ; QL E = ; QL B,E (f)=ql B,E (f/f c ); f c = scaling frequency = GHz. Fig.8 Package equivalent circuit SOT33. List of components (see Fig.8) B' Ccb MBC964 DESIGNATION VALUE UNIT C be ff C cb ff C ce ff L.34 nh L. nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C May 994

11 BFT9W PACKAGE OUTLINE handbook, full pagewidth..8 A.3. B X M B max M A detail X.3. MBC87 Dimensions in mm. Fig.9 SOT33. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 994

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