DISCRETE SEMICONDUCTORS DATA SHEET. BLT81 UHF power transistor May 09. Product specification Supersedes data of November 1992

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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November May 9

2 FEATURES SMD encapsulation Gold metallization ensures excellent reliability. APPLICATIONS Hand-held radio equipment in the 9 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT Top view c b e MAM3-1 PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter c collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at T s 6 C in a common emitter test circuit (see Fig.7). MODE OF OPERATION f (MHz) CW, class-b narrow band 9 V CE (V) P L (W) G p (db) η C (%) typ. 6.5 typ May 9 2

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 13). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 9.5 V V EBO emitter-base voltage open collector 2.5 V I C collector current (DC) 5 ma I C(AV) average collector current 5 ma P tot total power dissipation T s =11 C; note 1 2 W T stg storage temperature C T j operating junction temperature 175 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point P tot =2W; T s =11 C; note 1 32 K/W Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point of the collector pin. 1 MRC9 I C (A) V CE (V) T s = 11 C. Fig.2 DC SOAR May 9 3

4 CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage open emitter; I C = 1 ma 2 V V (BR)CEO collector-emitter breakdown voltage open base; I C = 1 ma 9.5 V V (BR)EBO emitter-base breakdown voltage open collector; I E =.1 ma 2.5 V I CES collector leakage current V CE = 1 V; V BE =.1 ma h FE DC current gain V CE =5V; I C = 3 ma; note 1; 25 C c collector capacitance V CB = 7.5 V; I E =i e = ; f = 1 MHz; 2.7 pf C re feedback capacitance V CE = 7.5 V; I C = ; f = 1 MHz pf Note 1. Measured under pulsed conditions: t p 2 µs; δ.2. 1 MRC9 6 MRC86 h FE 8 C c (pf) I C (ma) V CB (V) V CE = 7.5 V; t p 2 µs; δ.2; T j =25 C. I E =i e = ; f = 1 MHz; T j =25 C. Fig.3 DC current gain as a function of collector current; typical values. Fig. Collector capacitance as a function of collector-base voltage; typical values May 9

5 APPLICATION INFORMATION RF performance at T s 6 C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION f (MHz) CW, class-b narrow band 9 V CE (V) P L (W) G p (db) η C (%) typ. 8 typ typ. 6.5 typ. 77 Note 1. T s is the temperature at the soldering point of the collector pin. Ruggedness in class-ab operation The is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: f = 9 MHz; V CE = 9 V; P L = 1.2 W; T s 6 C. 1 G p (db) 8 G p (1) (2) () MRC88 1 η C η C (%) P L (W) 2. (1) MRC93 6 (3) (2) P L (W) P IN (mw) Class-B; f = 9 MHz; T s 6 C. Class-B; f = 9 MHz; T s 6 C. (1) V CE = 7.5 V. (2) V CE =6V. (3) V CE = 7.5 V. () V CE =6V. (1) V CE = 7.5 V. (2) V CE =6V. Fig.5 Power gain and collector efficiency as functions of load power; typical values. Fig.6 Load power as a function of input power; typical values May 9 5

6 Test circuit information handbook, full pagewidth 5 Ω input C1 C2 L1 C L C6 C8 C1 L5 L6 L8 L1 C1 5 Ω output C3 L2 C5 C7 DUT C11 C13 L7 R1 L3 L9 V CC C9 R2 C12 MEA899 Fig.7 Common emitter test circuit for class-b operation at 9 MHz May 9 6

7 List of components used in test circuit (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C1 multilayer ceramic chip capacitor; note 1 1 pf C2 multilayer ceramic chip capacitor; note 1 3 pf C3, C5, C11, C13 film dielectric trimmer 1. to 5.5 pf C multilayer ceramic chip capacitor; note pf C6, C7, C1 multilayer ceramic chip capacitor; note pf C8 multilayer ceramic chip capacitor; note pf C9 multilayer ceramic chip capacitor; note 1 22 pf C12 multilayer ceramic chip capacitor; 1 nf L1 stripline; note 2 5 Ω length 26.6 mm width.85 mm L2 1 turns enamelled.6 mm copper wire 25 nh int. dia..5 mm leads 2 5mm L3, L9 grade 3B Ferroxcube wideband HF choke L stripline; note 2 5 Ω length 18 mm width.85 mm L5 stripline; note 2 75 Ω length 3.5 mm width 2.5 mm L6 stripline; note 2 5 Ω length 1 mm width.85 mm L7 turns enamelled.6 mm copper wire 65 nh int. dia..5 mm leads 2 5mm L8 stripline; note 2 5 Ω length 15 mm width.85 mm L1 stripline; note 2 5 Ω length 2.6 mm width.85 mm R1, R2 metal film resistor 1 Ω,.25 W Notes 1. American Technical Ceramics type 1B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (ε r = 2.2); thickness 1 16 "; thickness of the copper sheet 35 µm May 9 7

8 handbook, full pagewidth 1 strap strap 8 rivets (1x) strap mounting screws (8x) strap L3 L9 V CC C2 R1 C L2 C6 C9 L7 R2 C1 C12 C1 L1 L L5 L6 L8 L1 C1 C3 C5 C7 C8 C11 C13 MEA898 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. Fig.8 Printed-circuit board and component lay-out for 9 MHz class-b test circuit in Fig May 9 8

9 1 Z i (Ω) 8 MRC91 2 ZL (Ω) 16 R L MRC92 6 r i 12 x i 8 2 X L f (MHz) f (MHz) Class-B; V CE = 7.5 V; P L = 1.2 W; T s 6 C. Class-B; V CE = 7.5 V; P L = 1.2 W; T s 6 C. Fig.9 Input impedance as a function of frequency (series components); typical values. Fig.1 Load impedance as a function of frequency (series components); typical values. 1 G p (db) 8 MRC89 6 Z i 2 Z L MBA f (MHz) Class-B; V CE = 7.5 V; P L = 1.2 W; T s 6 C. Fig.11 Power gain as a function of frequency; typical values. Fig.12 Definition of transistor impedance May 9 9

10 PACKAGE OUTLINE handbook, full pagewidth S seating plane.1 S B.2 M A A o max o max 1 o max M B (x) MSA35-1 Dimensions in mm. Fig.13 SOT May 9 1

11 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale May 9 11

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