UV Enhanced Series. Inversion Layers and Planar Diffused Silicon Photodiodes FEATURES APPLICATIONS

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Erin Shelton
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UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes.

1 UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. oth families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 00% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with to 0 volts applied reverse bias. In photovoltaic mode (unbiased), the capacitance is higher than diffused devices but decreases rapidly with an applied reverse bias. Photocurrent non-linearity sets in at lower photocurrents for inversion layer devices compared to the diffused ones. elow 700nm, their responsivities vary little with temperature. Planar diffused structure (UV-D Series) UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices. There are two types of planar diffused UV enhanced photodiodes available: UVD and UVE. oth series have almost similar electro-optical characteristics, except in the UVE PPLICTIONS Pollution Monitoring Medical Instrumentation UV Exposure Meters Spectroscopy Water Purification Fluorescence FETURES Inversion series: 00% Internal QE Ultra High R SH Planar Diffused Series: IR Suppressed High Speed Response High Stability Excellent UV response series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary. UVD devices peak at 970 nm and UVE devices at 70 nm (see graph). oth series may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic (unbiased) mode for applications requiring low drift with temperature variations. The UVE devices have a higher shunt resistance than their counterparts of UVD devices, but have a higher capacitance. These detectors are ideal for coupling to an OP-MP in the current mode configuration as shown below. 7

2 Planar Diffused UV Enhanced Photodiodes Typical Electro-Optical Specifications at T =3ºC Model Number rea (mm ) ctive rea Dimension (mm) Peak Wavelength λ P (nm) 4 nm Responsivity (/W) 633 nm 930 nm Capacitance (pf) Shunt Resistance (GΩ) 0 V -0 mv NEP (W/ Hz) 0V 4 nm Reverse Voltage (V) Rise Time (µs) 0 V 4 nm 0 Ω typ. typ. typ. typ. min. typ. typ. max. typ. Temp.* Range ( C) Operating Storage Package Style UVD Series Planar Diffused, Metal Package UV-00D.7.4 sq e UV-03D sq e UV-03D 34.8 sq e ~ ~ +80 / TO- 6 / TO-8 UVD Series Planar Diffused, Ceramic Package UV-00DC.7.4 sq e UV-03DC 34.8 sq e UV-00DC 00 0 sq e ~ ~ +80 / Ceramic UVE Series Planar Diffused, Metal Package UV-00E.7.4 sq e UV-03E sq e UV-03E 34.8 sq e ~ ~ +80 / TO- 6 / TO-8 UVE Series Planar Diffused, Ceramic Package UV-00EC.7.4 sq e - 0. UV-03EC 34.8 sq e UV-00EC 00 0 sq e ~ ~ +80 / Ceramic For mechanical specifications please refer to pages 8 thru 69. * Non-Condensing temperature and Storage Range, Non-Condensing Environment. 9

. Parameter Definitions: = Distance from top of chip to top of glass. a = Photodiode node. = Distance from top of glass to bottom of case.

= Filed of View (see definition below).. are in inches ( inch =.4 mm). 3. Pin diameters are 0.08 ± 0.00" unless otherwise specified. 4.

07 ± 0.00" thick. ll XUV products are provided with removable windows. ll DLS PSD products are provided with /R coated glass windows.

3 . Parameter Definitions: = Distance from top of chip to top of glass. a = Photodiode node. = Distance from top of glass to bottom of case. c = Photodiode Cathode (Note: cathode is common to case in metal package products unless otherwise noted). W = Window Diameter. F.O.V. = Filed of View (see definition below).. are in inches ( inch =.4 mm). 3. Pin diameters are 0.08 ± 0.00" unless otherwise specified. 4. Tolerances (unless otherwise noted) General: 0.XX ±0.0" 0.XXX ±0.00" Chip Centering: ±0.00" Dimension : ±0.0". Windows ll UV Enhanced products are provided with QURTZ glass windows, 0.07 ± 0.00" thick. ll XUV products are provided with removable windows. ll DLS PSD products are provided with /R coated glass windows. ll FIL photoconductive and photovoltaic products are epoxy filled instead of glass windows. For Further ssistance Please Call One of Our Experienced Sales and pplications Engineers Or - On the Internet at 7

4 Mechanical Specifications ll units in inches. Pinouts are bottom view. PIN-00 PIN-040 PIN-040-DP/S PIN-DI PIN-DPI PIN-3DI PIN-3DPI PIN--YG CD-T PIN-6DI PIN-6DPI PIN-44DI PIN-44DPI OSD3-0 OSD3-7Q PIN-6DI, PIN-6DPI PIN-44DI, PIN-44DPI, OSD3-0, OSD3-7Q P/N W PIN PIN P/N W ll Others CD-T P/N PIN-6DI/6DPI 0. PIN-44DI/44DPI 0. OSD OSD3-7Q 0.30 Quartz Window PIN-DI PIN-DPI PIN-3CDP PIN-3CDPI PX-6R PX-6R PIN-D PIN-DP PIN-DP/S PIN-3D PIN-3DP PIN-00E-0F UV-00 UV-00 UV-00D UV-00E UV-03D UV-03E UV-0 OSD--0 OSD-0 OSD-T OSD-T OSD.8-7Q OSD.8-7U PIN-6D PIN-6DP PIN-44D PIN-44DP UV-00 UV-03D UV-03E UV-03 ll Others PIN-D, PIN-DP, PIN-DP/S, PIN-3D, PIN-3DP, PIN-00E-0F UV-00D, UV-00E, UV-03D, UV-03 OSD--0, OSD-0, OSD-T, OSD-T OSD.8-7Q, OSD.8-7U P/N PX-6R ll Others P/N OSD-Prefix Devices ll Others Quartz Window: OSD.8-7Q UV Transmissive Window: OSD.8-7U UV-00, UV-00, UV-0 PIN-3CD PIN-3CDP PX-6 OSD-0 OSD-T OSD3-T OSD.-7Q OSD.-7U PIN-DPL PIN-HR00 PIN-HR008 PIN-HR00 PIN-HR06 PIN-HR040 P/N PIN-3CD / 3CDP PX OSD-Prefix Devices Quartz Window: OSD.-7Q UV Transmissive Window: OSD.-7U 8

5 Mechanical Specifications ll units in inches. Pinouts are bottom view. 0 Low Profile NC NC PIN-0DI PIN-0DPI PIN-0DPI/S UV-0L UV-00L PIN-0D PIN-0DP PIN-0DP/S UV-0 UV PIN-D PIN-DP Outer Contact node PIN-0D, PIN-0DP, PIN-0DP/S Outer Contact node Outer Contact Cathode UV-0, UV-00 Pin Circle Dia.=0.73 a c 3 Case 3 Special NC Special Plastic 4 Special Plastic.30 PIN-0P PIN-0DF FIL-C FIL-0C FIL-UV0 FIL-C4DG 0.70 FIL-44C FIL-00C FIL-UV0 FIL-UV00 FIL-C0DG FILTER CP C P/N FIL-C FIL-0C FIL-UV00 FIL-UV FIL-C4DG P/N FIL-44C FIL-00C FIL-UV0 FIL-UV FIL-C0DG P/N C Pinouts P/N P/N Pinouts PIN-0DF PIN-0P FIL-C FIL-0C a - c a - c FIL-UV00 FIL-UV0 c - a c - a FIL-44C FIL-00C FIL-UV0 FIL-UV00 FIL-C0DG a - - c a - - c c - - a c - - a c a a c c a a c FIL-C4DG c a c c a c 9

6 Mechanical Specifications ll units in inches. Pinouts are bottom view. TO- TO-8 3 TO-8 4 XUV-00 XUV-00 XUV PIN-DSIn-TEC Pinout TEC (-) Pin Circle Dia.=0.00 3a c Pin Circle Dia.=0.9 3a c Thermistor 3 Thermistor 4 TEC (+) ottom InGas, Cathode 6 ottom InGas, node 7 Top Silicon, node 0. 8 Top Silicon, Cathode Special Ceramic / Plastic 6 TO-8 C D Notch Indicates node Pin Min. P/N C D UV-00EC UV-03EC UV-00EC UV-00DC UV-03DC UV-00DC RD-00 RD-00 UV-3P UV-00EC UV-03EC UV-00EC UV-00DC UV-03DC UV-00DC XUV-0C XUV-00C OSD3-7CO OSD3-LR- OSD3-LR-D PIN-RD07 PIN-RD XUV-0C XUV-00C RD RD UV-3P c Case a OSD3-7CO OSD3-LR- OSD3-LR-D Note: OSD3-prefix packages come with 0.3 (min.) leads Pin Circle Dia.=0.9 7 Special Plastic 8 NC PIN-0D PIN-0DP PIN-0DP/S XUV Pin Diameter=0.040 NC Connector Outer Contact = Cathode c a 6

UV-EQ Series new 90 to 000 nm Spectral Range, with Suppressed NIR OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV EQ and UV EQC Series.

7 UV-EQ Series new 90 to 000 nm Spectral Range, with Suppressed NIR OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV EQ and UV EQC Series. The new Silicon is processed for enhanced responsivity over nm and sensitivity down to 90 nm. Their response in NIR region has been suppressed. The EK series offer hermetic package alternative at a lower cost and is sensitive down to 30nm. These detectors can be reverse biased for lower capacitance, faster response, and wider dynamic range applications. They are ideal for UV Spectrophotometry, nalytical Instruments, and Medical Instrumentation. FETURES Excellent UV Sensitivity Suppressed NIR Response High Shunt Resistance PPLICTIONS Spectrophotometer nalytical Instruments Medical Instrument Typical Electro-Optical Specifications at T =3º C Model Number rea (mm ) ctive rea Dimension (mm) Peak Wavelength (nm) Responsivity (/W) nm nm nm Capacitance (pf) 0V Shunt Resistance (GOhm) -0mV 0V 00nm 0V kohm typ. typ. typ. typ. typ. min. typ. typ. max typ. NEP (W/ Hz) Reverse Voltage (V) Rise Time (us) Operating Temp. Range ( C) Storage Package Style Metal Package, Quartz Window UV-00EQ.7.4 x E- 0. / TO- UV-03EQ x 3.6 UV-03EQ 34.8 x E E-4-0 ~ ~ +80 / TO- 3 / TO-8 UV-00EQ 00 0 x E / NC Ceramic Package, Quartz Window UV-00EQC.7.4 x E- 0. UV-03EQC 34.8 x.8 UV-00EQC 00 0 x E E ~ ~ / Ceramic Metal Package, orosilicate Window UV-00EK.7.4 x E-* 0. / TO- UV-03EK x 3.6 UV-03EK 34.8 x E-4* E-4* -40 ~ ~ + / TO- 3 / TO-8 UV-00EK 00 0 x E-4* 7 0 / NC *) NEP is calculated using typical responsivity 0. /W at 30nm ) Sensitivity range: nm 3 No responsibility is assumed for inaccuracies or omission. OSI Optoelectronics Inc. reserves the right to change products and specifications.

8 UV-EQ Series 90 to 000 nm Spectral Range, with Suppressed NIR < Typ. Responsitvity with Quartz Window (T = C) < Typ. Responsitvity with orosilicate Window (T = C) < Typ. Capacitance vs. Reverse ias (T = C) < Typ. Dark Current vs. Reverse ias (T = C, Normalized at -0.0v) < Typ. Rise Time vs. Load Resistance (T = C, V R =0V) < Typ. Shunt Resistance vs. mbient Temperature UV-00EQ/K Rise Time (us) UV-00EQC UV-03EQ/K UV-00EQ/K UV-03EQ/K Shunt Resistance (G.Ohm) UV-03EQ/K UV-00EQC UV-03EQ/K Load Resistance (Ohm) No responsibility is assumed for inaccuracies or omission. OSI Optoelectronics Inc. reserves the right to change products and specifications. 4

9 MECHNICL Specifications ll units in inches. Pinouts are bottom view. < TO- < TO- < 3 TO-8 UV-00 UV-00 UV UV-00DQ/K UV-03DQ/K UV-00EQ/K UV-03EQ/K UV-03DQ/K UV-03EQ/K c: cathode and case c: cathode and case Model # UV-XXX Model # UV-xxxDQ/K UV-xxxEQ/K Model # UV-03DQ/K UV-03EQ/K < 4 Ceramic P/N C D Notch Indicates node Pin UV-00EQC UV-03EQC UV-00EQC UV-00DQC UV-03DQC C D Min. UV-00DQC XUV-0C XUV-00C < TO- < 6 TO-8 < 7 NC XUV XUV-00 XUV XUV Pin Circle Dia.=0.00 Pin Circle Dia.=0.9 NC Connector Outer Contact = Cathode 3c a 3a c 9 No responsibility is assumed for inaccuracies or omission. OSI Optoelectronics Inc. reserves the right to change products and specifications.

10 MECHNICL Specifications ll units in inches. Pinouts are bottom view. < 8 TO-8 < 9 Low Profile < 0 NC.000 UV-00 UV UV-0L UV-00L UV-00EQ/K UV-00DQ/K UV-0 UV c: cathode and case Pin Circle Dia.=0.73 Outer Contact node Outer Contact Cathode UV-00EQ/K, UV-00DQ/K UV-0, UV-00 a c 3 Case < Special Plastic < Special Plastic < 3 Special Plastic FIL-UV00 FIL-UV FIL-UV0 FIL-UV Notch Indicates node Pin UV-3P FIL-UV00 FIL-UV0 P/N FIL-UV0 FIL-UV00 P/N Pinouts P/N FIL-UV00 a - c a - c FIL-UV0 c - a c - a Pinouts P/N FIL-UV0 FIL-UV00 c - - a c - - a No responsibility is assumed for inaccuracies or omission. OSI Optoelectronics Inc. reserves the right to change products and specifications. 9 0

Photovoltaic Series. Planar Diffused Silicon Photodiodes FEATURES APPLICATIONS

Photovoltaic Series. Planar Diffused Silicon Photodiodes FEATURES APPLICATIONS Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity