Optoelectronics Data Book

Transcription

1 Optoelectronics Data Book Innovators in Optoelectronics

2 TABLE OF CONTENTS Alphanumeric Index...4 Eye Safety Issues...6 Introduction...7 Componets High-Power GaAlAs IR Emitters in TO-46 Packages... High-Temperature GaAlAs IR Emitters in TO-46 Packages...26 Super High-Power GaAlAs IR Emitters in TO-39 Packages...32 Multi High-Power GaAlAs IR Emitters in TO-66 Packages...48 Multi High-Power GaAlAs IR Emitters in TO-66 Packages...5 Custom Capabilities and Products...6 GaAlAs IR Detectors...6 Hi-Rel Rad Hard GaAlAs IR Emitters in TO-46 Packages...65 Hi-Rel Rad Hard GaAlAs IR Emitters in Pill Type Packages...7 Hi-Rel GaAlAs IR Emitters in TO-46 Packages...73 Hi-Rel GaAlAs IR Emitters in Pill Type Packages...79 Blue Emitters in TO-39 Packages...8 Red Emitters in TO-39 Packages...83 Detector Preamplifiers...85 Silicon Photodiodes...97 IRD UV Photodiodes

3 Opto Diode Corporation reserves the right to make changes in order to improve design or performance and to supply the best possible products. Information provided in this data book is believed to be accurate and reliable. No responsibility is assumed for its use, nor for any infringements on the rights of others. Opto Diode also assumes no responsibility for customer product designs. Copyright 25 Opto Diode Corporation 3

4 ALPHA NUMERIC INDEX AXUV6ELCS...Photodiode Socket...92 AXUV6ELG...Electron Detection mm AXUV2ACS...Photodiode Socket...93 AXUV2A...Electron Detection Ø5.5 mm AXUV2ELCS...Photodiode Socket...94 AXUV2ELG...Electron Detection 3.75 mm AXUV2HS...Electron Detection Ø5 mm AXUV63HS-CH...Electron Detection 63 mm AXUV63HS...Electron Detection Ø9 mm...43 AXUVAl...Electron Detection mm AXUVCS...Photodiode Socket...9 AXUVG...Electron Detection mm AXUVTi/C2...Electron Detection mm AXUV3C...Photodiode 33 mm AXUV3CTS...Photodiode Socket...95 AXUV576C...Electron Detection 576 mm AXUVHS5...Electron Detection mm AXUVHS6...Electron Detection.8 mm AXUVHS...Photodiode Ø.6 mm...59 AXUVPS7...Electron Detection 5 mm OD-5L...Narrow Angle TO-39 Pkg 88nm Emitter...32 OD-5W...Wide Angle TO-39 Pkg 88nm Emitter...34 OD-...Wide Angle TO-39 Pkg 88nm Emitter...36 OD-LISOLHT...Narrow Angle TO-39 Pkg 85nm Emitter...4 OD-L...Narrow Angle TO-39 Pkg 85nm Emitter...38 OD-WISOLHT...Wide Angle TO-39 Pkg 85nm Emitter...44 OD-W...Wide Angle TO-39 Pkg 85nm Emitter...42 OD-25...Wide Angle TO-39 Pkg 85nm Emitter...46 OD-469L...TO-39 Pkg Blue LED...8 OD-624L...High Output Red LED...83 OD TO-66 Pkg 88nm Emitter...5 OD TO-66 Pkg 88nm Emitter...48 OD TO-66 Pkg 88nm Emitter...54 OD TO-66 Pkg 88nm Emitter...52 OD TO-66 Pkg 88nm Emitter...58 OD TO-66 Pkg 88nm Emitter...56 OD-8F...Narrow Angle RAD Hard IR Emitter (Military)...69 OD-8L...Medium Angle RAD Hard IR Emitter (Military)...67 OD-8PP...Pill Pkg RAD Hard IR Emitter in (Military)...7 OD-8W...Wide Angle RAD Hard IR Emitter (Military)...65 OD-85FHT...Narrow Angel TO-46 85nm Emitter, High Temperature...6 OD-85F...Narrow Angle TO-46 85nm IR Emitter... OD-85LHT...Medium Angel TO-46 85nm Emitter, High Temperature...8 OD-85L...Medium Angle TO-46 85nm IR Emitter...2 OD-85WHT...Wide Angel TO-46 85nm Emitter, High Temperature...4 OD-85W...Wide Angle TO-46 85nm IR Emitter...8 OD-88FHT...Narrow Angle TO-46 88nm Emitter, High-Temperature...28 OD-88FJ...Hi-Rel 88nm Emitter, Narrow Angle (Military)...77 OD-88F...Narrow Angle TO-46 88nm Emitter...22 (Continued on next page) 4

5 ALPHA NUMERIC INDEX OD-88LHT...Medium Angle TO-46 88nm Emitter, High-Temperature...3 OD-88LJ...Hi-Rel 88nm Emitter, Medium Angle...75 OD-88L...Medium Angle TO-46 88nm Emitter...24 OD-88PP...Hi-Rel 88nm Emitter in Pill Pkg (Military)...79 OD-88WHT...Wide Angle TO-46 88nm Emitter, High-Temperature...26 OD-88WJ...Hi-Rel IR Emitter...73 OD-88W...Wide Angle TO-46 88nm IR Emitter...2 ODA-5W-K...NIR/Red Enhanced 5mm 2 Photodiode-Preamplifier...85 ODA-5WB-K...Blue/Green Enhanced 5mm 2 Photodiode-Preamplifier...87 ODA-6W-M...NIR/Red Enhanced 6mm 2 Photodiode-Preamplifier...89 ODA-6W-5M...NIR/Red Enhanced 6mm 2 Photodiode-Preamplifier...93 ODA-6WB-M...Blue/Green Enhanced 6mm 2 Photodiode-Preamplifier...9 ODA-6WB-5M...Blue/Green Enhanced 6mm 2 Photodiode-Preamplifier...95 ODD-...mm 2 Photodiode in TO-8Package...97 ODD-B...mm 2 Photodiode in TO-8Package...99 ODD-W...mm 2 Photodiode in TO-8Package... ODD-WB...mm 2 Photodiode in TO-8Package...3 ODD-3W-2...Red Enhanced 3. mm 2 Bi-CellPhotodiode...5 ODD-5WBISOL...5mm 2 Photodiode in TO-5 Package... 3 ODD-5WB...TO-5 Hermetic Pkg...9 ODD-5WISOL...5mm 2 Photodiode in TO-5 Package... ODD-5W...TO-5 Hermetic Pkg...7 ODD-2WB...TO-8 Hermetic Pkg...2 ODD-2W...TO-8 Hermetic Pkg... 9 ODD-5W...5mm 2 Photodiode in TO-5 Package... 5 ODD-5WB...5mm 2 Photodiode in TO-5 Package... 7 ODD-42W...42mm 2 Photodiode in TO-8 Package...23 ODD-42WB...42mm 2 Photodiode in TO-8 Package...25 ODD-9-...Surface Mount Photodiode with Daylight Filter...27 ODD Surface Mount Photodiode...3 ODD-SXUV-DLPSD...UV/EUV Continuous Position Sensor...73 SXUV5...Photodiode Ø2.5 mm SXUV2HS...Photodiode Ø5 mm SXUV...Electron Detection mm SXUV3C...Photodiode 33 mm SXUVPS4C...Quadrant Photodiode 5 mm SXUVPS4...Quadrant Photodiode 5 mm UVG5...Photodiode 5 mm UVG5S...Photodiode 5 mm UVG2...Photodiode 3 mm UVG2C...Electron Detection 2 mm UVG2S...Photodiode 24 mm UVG...Electron Detection mm

6 SAFETY STANDARDS APPLICABLE TO LEDs The United States applies different emission limits than other countries so care should be taken to apply the proper Standard and emission limit. In the United States, ANSI Z36.-2, American National Standard for Safe Use of Lasers, is the standard used to define emission limits for Lasers. Appendix H of this Standard refers manufacturers to ANSI RP27. and RP27.3 to apply Safety Standards for LEDs. Western Europe, and other Countries, apply IEC 6825-, Safety of Laser Products as the standard for LEDs and Lasers. This document does not make a distinction or apply different emission limits between LEDs and lasers. Reflector cups, multiple LEDs, external lenses and/or other optical components applied by the equipment manufacturer may significantly alter the emission level. It is the responsibility of the equipment manufacturer to test and verify the actual emission in the system. Opto Diode will be available to provide values at the component level as requested. 6

7 INTRODUCTION Opto Diode Corporation was established in 98 as an independent, privately held corporation whose mission is to supply the most reliable and highest power IRLED s in the world. While still maintaining that edge, we have also diversified into detectors sensitive only to near infrared LED s, detector and emitter arrays, and specialized wavelength devices. Our high power IRLED s are used in a variety of applications including: Photo-Electric Controls Optical Encoders Night Vision Systems CCD Illuminators Autofocusing Cameras Ophthalmic Instrumentation A quality control system for all products which meet the requirements of Mil-I-4528 is in place to ensure the highest quality devices are available at the most reasonable cost. In addition, we specialize in small production runs for military applications. We can adapt the appropriate sections of Mil-S-95 to provide a product suitable for ground, air or space based applications. Our devices have been used on many high reliability platforms including: Accelerometers for Airborne Applications Motion Control Systems on the Space Shuttle and various Weather Satellites Aircraft Landing Lights and Illuminators Opto Diode is also a source you should think of when needing custom packaging of LED s in the visible range. We work closely with other chip suppliers to specify the exact wavelength of interest and package them singly or in array formats to achieve higher power output levels and better heat sinking than is currently available from T 3/4 plastic packages. On a custom basis we can assemble chips on any imaginable TO header from a TO-46 to a TO-66 and everything in between. Call or fax us with details of your custom application. 7

8 HIGH-POWER GaAlAs IR EMITTERS OD-85W FEATURES High optical output 85nm peak emission Hermetically sealed TO-46 package Wide emision angle to cover a large area All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate per Thermal Derating Curve above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -4 C to C C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 8

9 HIGH-POWER GaAlAs IR EMITTERS OD-85W 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS DEGRADATION CURVE T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 2mA I F = 5mA I F = ma I F = ma (-3σ) RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) SPECTRAL OUTPUT.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC FORWARD CURRENT, I F (ma) Revision February 26, 23 9

10 HIGH-POWER GaAlAs IR EMITTERS OD-85F FEATURES High optical output 85nm peak emission Hermetically sealed TO-46 package Narrow angle for long distance applications All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate linearly above 25 C. THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -4 C to C C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads. 2 Air circulating at a rapid rate to keep case temperature at 25 C. Revision February 26, 23

11 HIGH-POWER GaAlAs IR EMITTERS OD-85F 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS DEGRADATION CURVE T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 2mA I F = 5mA I F = ma I F = ma (-3σ) RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) SPECTRAL OUTPUT.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC FORWARD CURRENT, I F (ma) Revision February 26, 23

12 HIGH-POWER GaAlAs IR EMITTERS OD-85L FEATURES High optical output 85nm peak emission Hermetically sealed TO-46 package Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate per Thermal Derating Curve above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R 2 THJA -4 C to C C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 2

13 HIGH-POWER GaAlAs IR EMITTERS OD-85L 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS DEGRADATION CURVE T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 2mA I F = 5mA I F = ma I F = ma (-3σ) RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) SPECTRAL OUTPUT.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC FORWARD CURRENT, I F (ma) Revision February 26, 23 3

14 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85WHT FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 2mA I FP = 2mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R 2 THJA -65 C to 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 4

15 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85WHT 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS RADIATION PATTERN BEAM ANGLE, θ(deg) SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC WAVELENGTH, λ(nm) FORWARD CURRENT, I F (ma) Revision February 26, 23 5

16 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85FHT FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 2mA I FP = 2mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R 2 THJA -65 C to 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 6

17 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85FHT 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS BEAM ANGLE, θ(deg) RADIATION PATTERN SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC WAVELENGTH, λ(nm) FORWARD CURRENT, I F (ma) Revision February 26, 23 7

18 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85LHT FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = ma I F = 2mA I F = 2mA I F = 2mA I F = ma I R = μa I FP = 2mA I FP = 2mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 2mW ma 3mA 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -65 C to 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 8

19 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-85LHT 2 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) TYPICAL CHARACTERISTICS RADIATION PATTERN BEAM ANGLE, θ(deg) SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC WAVELENGTH, λ(nm) FORWARD CURRENT, I F (ma) Revision February 26, 23 9

20 HIGH-POWER GaAlAs IR EMITTERS OD-88W GLASS.6 HIGH MAX ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation. MIN..7. ANODE (CASE) CATHODE Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C FEATURES High reliability liquid-phase epitaxially grown GaAlAs 88nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Wide emission angle to cover a large area All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o 8 2 mw I F = ma Radiant Intensity, I e 6 mw/sr Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ I F = 5mA 88 8 nm nm Half Intensity Beam Angle, θ 7 8 Deg Forward Voltage, V F I F = ma.55.9 Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf μsec μsec THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C.4 RoHS 9mW ma 3A 5V 26 C END OF LIFE DECEMBER C TO C C 4 C/W Typical 35 C/W Typical Revision February 26, 23 2

21 HIGH-POWER GaAlAs IR EMITTERS OD-88W THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT NO HEAT SINK T CASE = 25 C NO PRE BURN-IN PERFORMED INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) END OF LIFE DECEMBER 23 I p t = μs t = μs t = 5μs t T D = t T DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 2

22 HIGH-POWER GaAlAs IR EMITTERS OD-88F GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES High reliability liquid-phase epitaxially grown GaAlAs 88nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Narrow angle for long distance applications All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o 5 7 mw I F = ma Radiant Intensity, I e 2 35 mw/sr Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = ma nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2Derate linearly above 25 C 9mW ma 3A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 35 C/W Typical Thermal Resistance, R THJA 2 5 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 22

23 HIGH-POWER GaAlAs IR EMITTERS OD-88F THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT NO HEAT SINK T CASE = 25 C NO PRE BURN-IN PERFORMED INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) I p t = μs t = μs t = 5μs t T D = t T RADIATION PATTERN BEAM ANGLE, θ(deg) END OF LIFE DECEMBER 23 DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 23

24 HIGH-POWER GaAlAs IR EMITTERS OD-88L GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES High reliability liquid-phase epitaxially grown GaAlAs 88nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o 8 2 mw I F = ma Radiant Intensity, I e 5 mw/sr Peak Emission Wavelength, λ P 88 nm I F = 5mA Spectral Bandwidth at 5%, Δλ 8 nm Half Intensity Beam Angle, θ Forward Voltage, V F I F = ma Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf μsec μsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2 RoHS 9mW ma 3A 5V 26 C END OF LIFE DECEMBER C TO C C 4 C/W Typical 35 C/W Typical Revision February 26, 23 24

25 HIGH-POWER GaAlAs IR EMITTERS OD-88L THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) 8 6 INFINITE HEAT SINK 4 NO 2 HEAT SINK AMBIENT TEMPERATURE ( C) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) END OF LIFE DECEMBER 23 I p t = μs t = μs t = 5μs t T D = t T DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 25

26 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88WHT GLASS.6 HIGH MAX MIN..7 ANODE (CASE). CATHODE ELECTRO-OPTICAL CHARACTERISTICS AT 25 C FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = μa V R = V mw nm nm Deg pf μsec μsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 3Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -65 C TO 5 C Maximum Junction Temperature 5 C Thermal Resistance, R THJA 37 C/W Typical Thermal Resistance, R THJA 2 2 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 26

27 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88WHT THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT NO HEAT SINK T CASE = 25 C NO PRE BURN-IN PERFORMED INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) END OF LIFE DECEMBER 23 I p t = μs t = μs t = 5μs t T D = t T DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 27

28 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88FHT GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = μa V R = V mw nm nm Deg pf μsec μsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -65 C TO 5 C Maximum Junction Temperature 5 C Thermal Resistance, R THJA 37 C/W Typical Thermal Resistance, R THJA 2 2 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 28

29 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88FHT THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT NO HEAT SINK T CASE = 25 C NO PRE BURN-IN PERFORMED INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) END OF LIFE DECEMBER 23 I p t = μs t = μs t = 5μs t T D = t T DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 29

30 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88LHT GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 8 C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = μa V R = V mw nm nm Deg pf μsec μsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -65 C TO 5 C Maximum Junction Temperature 5 C Thermal Resistance, R THJA 37 C/W Typical Thermal Resistance, R THJA 2 2 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 3

31 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-88LHT THERMAL DERATING CURVE 2 MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT NO HEAT SINK T CASE = 25 C NO PRE BURN-IN PERFORMED INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) I F = 2mA I F = 5mA I F = ma STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw).... DUTY CYCLE, D (%) END OF LIFE DECEMBER 23 I p t = μs t = μs t = 5μs t T D = t T DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 3

32 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-5L GLASS DOME ANODE (CASE).5.2 CATHODE ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C FEATURES Ultra high power output Four wire bonds on die corners Very narrow optical beam Standard 3-lead TO-39 hermetic package Chip size.3 x.3 inches All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 5mA 4 5 I F = A 6 mw Radiant Intensity, I e Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 5mA I F = 5mA mw/sr nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf μsec μsec mw 5mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 5 C/W Typical Thermal Resistance, R THJA 2 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 32

33 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-5L THERMAL DERATING CURVE, MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw), 9 INFINITE 8 HEAT SINK NO HEAT SINK AMBIENT TEMPERATURE ( C) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 5mA I F = 25mA I F = 45mA STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw) T... DUTY CYCLE, D (%) I p t = μs t = 5μs t = μs t D = t T END OF LIFE DECEMBER 23 DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 33

34 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-5W GLASS.2 HIGH MAX ANODE (CASE).2 CATHODE ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C FEATURES Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size.3 x.3 inches All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 5mA 6 75 I F = A mw Radiant Intensity, I e Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 5mA I F = 5mA mw/sr nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf μsec μsec mw 5mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 45 C/W Typical Thermal Resistance, R THJA 2 75 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 34

35 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-5W THERMAL DERATING CURVE, MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw), 9 8 INFINITE 7 HEAT SINK 6 5 NO HEAT SINK AMBIENT TEMPERATURE ( C) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 5mA I F = 25mA I F = 45mA STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw) T... DUTY CYCLE, D (%) I p t = μs t = 5μs t = μs t D = t T END OF LIFE DECEMBER 23 DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 35

36 SUPER HIGH-POWER GaAlAs IR EMITTERS OD- EPOXY MAX ANODE (CASE) CATHODE *.3 ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C FEATURES Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size.3 x.3 inches All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 5mA 8 I F = A 3 mw Radiant Intensity, I e Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 5mA I F = 5mA mw/sr nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = μa V R = V pf μsec μsec mw 5mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 45 C/W Typical Thermal Resistance, R THJA 2 75 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25 C RoHS END OF LIFE DECEMBER 23 Revision February 26, 23 36

37 SUPER HIGH-POWER GaAlAs IR EMITTERS OD- THERMAL DERATING CURVE, MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS TYPICAL CHARACTERISTICS, 9 8 INFINITE 7 HEAT SINK 6 5 NO HEAT SINK AMBIENT TEMPERATURE ( C) POWER DISSIPATION (mw) FORWARD CURRENT, I F (amps) DEGRADATION CURVE FORWARD I-V CHARACTERISTICS SPECTRAL OUTPUT T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 5mA I F = 25mA I F = 45mA STRESS TIME, (hrs) FORWARD VOLTAGE, V F (volts) PEAK FORWARD CURRENT, Ip (amps) RELATIVE POWER OUTPUT RADIATION PATTERN BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT, POWER OUTPUT, P o (mw) T... DUTY CYCLE, D (%) I p t = μs t = 5μs t = μs t D = t T END OF LIFE DECEMBER 23 DC PULSE μs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 37

38 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-L FEATURES Ultra high optical output Four wire bonds on die corners Very narrow optical beam Standard 3-lead TO-39 hermetic package Chip size:.26 x.26 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two Anode pins must be externally connected together. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I F = 5mA I F = 5mA I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) mw 5mA.5A 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -4 C to C C 5 C/W Typical 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision June 23, 23 38

39 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-L 9 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN I F = 5mA T j = 63 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 25mA T j = 89 C I F = 45mA T j = 9 C 45 ma -3 Dev ,, STRESS TIME, (hrs) BEAM ANGLE, θ(deg) TYPICAL CHARACTERISTICS SPECTRAL OUTPUT WAVELENGTH, λ(nm) POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT, P o (mw) DC, FORWARD CURRENT, I F (ma) Revision June 23, 23 39

40 HIGH TEMPERATURE GaAlAs IR EMITTERS OD-LISOLHT FEATURES Wide temperature rating 2 lead TO-39 package Narrow angle of emission Isolated case RoHS and REACH compliant RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I F = 5mA I F = 5mA I R = μa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C mw 5mA.5A 5V 26 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJC -65 C to 5 C 5 C 5 C/W Typical 6 C/W Typical Revision May 2, 24 4

41 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-LISOLHT 9 THERMAL DERATING CURVE 8 MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN I F = 5mA T j = 63 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 25mA T j = 89 C I F = 45mA T j = 9 C 45 ma -3 Dev ,, STRESS TIME, (hrs) BEAM ANGLE, θ(deg) TYPICAL CHARACTERISTICS OPTICAL POWER (NORM) OPTICAL SPECTRUM (5mA, TYPICAL) WAVELENGTH, (nm) POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C) POWER OUTPUT, P o (ma), FORWARD CURRENT, I F (ma) Revision May 2, 24 4

42 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-W FEATURES Ultra high optical output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size:.26 x.26 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two Anode pins must be externally connected together. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I F = 5mA I F = 5mA I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) mw 5mA.5A 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -4 C to C C 45 C/W Typical 75 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision June 23, 23 42

43 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-W 9 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN I F = 5mA T j = 63 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 25mA T j = 89 C I F = 45mA T j = 9 C 45 ma -3 Dev ,, STRESS TIME, (hrs) BEAM ANGLE, θ(deg) SPECTRAL OUTPUT.5.4 POWER OUTPUT vs TEMPERATURE TYPICAL CHARACTERISTICS WAVELENGTH, λ(nm) RELATIVE POWER OUTPUT AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC, FORWARD CURRENT, I F (ma) Revision June 23, 23 43

44 HIGH TEMPERATURE WIDE ANGLE IRLED OD-WISOLHT FEATURES Wide temperature rating 2 lead TO-39 package Ideal for hi temp industrial applications Isolated case RoHS and REACH compliant RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I F = 5mA I F = 5mA I R = μa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C mw 5mA.5A 5V 26 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJC -65 C to 5 C 5 C 5 C/W Typical 6 C/W Typical Revision May 2, 24 44

45 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-WISOLHT 9 THERMAL DERATING CURVE 8 MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN I F = 5mA T j = 63 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 25mA T j = 89 C I F = 45mA T j = 9 C 45 ma -3 Dev ,, STRESS TIME, (hrs) BEAM ANGLE, θ(deg) OPTICAL SPECTRUM (5mA, TYPICAL).5.4 POWER OUTPUT vs TEMPERATURE TYPICAL CHARACTERISTICS OPTICAL POWER (NORM) WAVELENGTH, (nm) RELATIVE POWER OUTPUT AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (ma), FORWARD CURRENT, I F (ma) Revision May 2, 24 45

46 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-25 FEATURES Ultra high optical output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size:.26 x.26 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two Anode pins must be externally connected together. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I F = 5mA I F = 5mA I R = μa I FP = 5mA I FP = 5mA mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) mw 5mA.5A 5V 26 C Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA 2 Thermal Resistance, R THJA -4 C to C C 45 C/W Typical 75 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision June 23, 23 46

47 SUPER HIGH-POWER GaAlAs IR EMITTERS OD-25 9 THERMAL DERATING CURVE 8 MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN I F = 5mA T j = 63 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 25mA T j = 89 C I F = 45mA T j = 9 C 45 ma -3 Dev ,, STRESS TIME, (hrs) BEAM ANGLE, θ(deg) SPECTRAL OUTPUT.5.4 POWER OUTPUT vs TEMPERATURE TYPICAL CHARACTERISTICS WAVELENGTH, λ(nm) RELATIVE POWER OUTPUT AMBIENT TEMPERATURE ( C) POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC, FORWARD CURRENT, I F (ma) Revision January 29, 24 47

48 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-663 EPOXY LED CHIPS (REF. ONLY).342 R R FEATURES Super high power output 88nm peak emission Three chips connected in series TO-66 header for good heat dissipation % tested for power output Electrically isolated case.35 MIN CATHODE ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified..7 MAX DIMPLE.68.7 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 3mA I F = 8A mw Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 3mA nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = µa V R = V pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 2W 4mA 8A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 6 C/W Typical Thermal Resistance, R THJA 2 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 48

49 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-663 MAXIMUM RATINGS POWER DISSIPATION (mw) 2,,8,6,4,2, THERMAL DERATING CURVE NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). MAXIMUM PEAK PULSE CURRENT I p t = µs t = µs t t = 5µs D = t T T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS DEGRADATION CURVE I F = 5mA T CASE = 55 C T CASE = 25 C NO PRE BURN-IN PERFORMED I F = 3mA T CASE = 9 C I F = 3mA T CASE = 45 C RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) FORWARD CURRENT, I F (amps) 8 FORWARD I-V CHARACTERISTICS FORWARD VOLTAGE, V F (volts) SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C), POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw), DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision January 29, 24 49

50 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD FEATURES Ultra high optical output 85nm IR illuminator Very uniform optical beam Standard 2-lead TO-66 electrically isolated package Ideal for night vision illumination All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 3mA I F = 5mA I f = 3mA I R = μa mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2Derate linearly above 25 C 2.2W 4mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJC -4 C to + C C 6 C/W Typical 6 C/W Typical Revision June 23, 23 5

51 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD ,,8 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw),6,4,2, NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN TYPICAL CHARACTERISTICS SPECTRAL OUTPUT I F = 5mA T j = 68 C T CASE = 25 C NO PRE BURN-IN PERFORMED STRESS TIME, (hrs) I F = 25mA T j = 95 C I F = 4mA T j = C 4 ma -3 Dev,, RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) Revision June 23, 23 5

52 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-666 EPOXY LED CHIPS (REF. ONLY).342 R R FEATURES High reliability LPE GaAlAs IRLEDs Ultra high power output 88nm peak emission Six chips connected in series Very wide angle of emission Electrically isolated case.35 MIN CATHODE ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified..7 MAX DIMPLE.68.7 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 3mA I F = 6A mw Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 3mA nm nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = µa V R = V pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 4W 4mA 6A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 6 C/W Typical Thermal Resistance, R THJA 2 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 52

53 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-666 MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) 4,5 4, 3,5 3, 2,5 2,,5, 5 THERMAL DERATING CURVE AMBIENT TEMPERATURE ( C) NO HEAT SINK DEGRADATION CURVE INFINITE HEAT SINK I F = 2mA T CASE = 33 C UNITS PRE CONDITIONED AT I F = ma, T CASE = C, t = 24 HOURS I F = 4mA T CASE = 48 C PEAK FORWARD CURRENT, Ip (amps). T... DUTY CYCLE, D (%) MAXIMUM PEAK PULSE CURRENT I p t = µs t = 5µs t = µs t RADIATION PATTERN D = t T STRESS TIME, (hrs) BEAM ANGLE, θ(deg) FORWARD CURRENT, I F (amps) 7 FORWARD I-V CHARACTERISTICS FORWARD VOLTAGE, V F (volts) SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C), POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 53

54 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD FEATURES Ultra high optical output 85nm IR illuminator Very uniform optical beam Standard 2-lead TO-66 electrically isolated package Ideal for night vision illumination All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 3mA I F = 5mA I f = 3mA I R = μa mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 4.3W 4mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJC -4 C to + C C 6 C/W Typical 6 C/W Typical Revision June 23, 23 54

55 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD ,,8 THERMAL DERATING CURVE MAXIMUM RATINGS POWER DISSIPATION (mw),6,4,2, NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN TYPICAL CHARACTERISTICS SPECTRAL OUTPUT I F = 5mA T j = 68 C T CASE = 25 C NO PRE BURN-IN PERFORMED STRESS TIME, (hrs) I F = 25mA T j = 95 C I F = 4mA T j = C 4 ma -3 Dev,, RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) Revision June 23, 23 55

56 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-669 EPOXY MIN.3 LED CHIPS (REF. ONLY).342 R R FEATURES Highest power output available 88nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. CATHODE ANODE.7 MAX DIMPLE.68.7 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o I F = 3mA 39 5 I F = 5A 65 mw Peak Emission Wavelength, λ P 88 nm Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F I F = 5mA I F = 3mA nm Deg Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I R = µa V R = V pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 6W 4mA 5A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range -55 C to C Maximum Junction Temperature C Thermal Resistance, R THJA 6 C/W Typical Thermal Resistance, R THJA 2 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 56

57 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-669 MAXIMUM RATINGS TYPICAL CHARACTERISTICS POWER DISSIPATION (mw) 6, 5, 4, 3, 2,, THERMAL DERATING CURVE AMBIENT TEMPERATURE ( C) INFINITE HEAT SINK NO HEAT SINK DEGRADATION CURVE I F = 2mA T CASE = 33 C UNITS PRE CONDITIONED AT I F = ma, T CASE = C, t = 24 HOURS I F = 4mA T CASE = 48 C PEAK FORWARD CURRENT, Ip (amps). T... DUTY CYCLE, D (%) MAXIMUM PEAK PULSE CURRENT I p t = µs t = 5µs t = µs t RADIATION PATTERN D = t T STRESS TIME, (hrs) BEAM ANGLE, θ(deg) FORWARD CURRENT, I F (amps) FORWARD I-V CHARACTERISTICS FORWARD VOLTAGE, V F (volts) SPECTRAL OUTPUT RELATIVE POWER OUTPUT POWER OUTPUT vs TEMPERATURE AMBIENT TEMPERATURE ( C), POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw), DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 57

58 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD FEATURES Ultra high optical output 85nm IR illuminator Very uniform optical beam Standard 2-lead TO-66 electrically isolated package Ideal for night vision illumination All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Rise Time Fall Time I F = 3mA I F = 5mA I f = 3mA I R = μa mw nm nm Deg nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (μs, 2Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 6W 37mA A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJC -4 C to + C C 6 C/W Typical 6 C/W Typical Revision June 23, 23 58

59 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD THERMAL DERATING CURVE 6, MAXIMUM RATINGS POWER DISSIPATION (mw) 5, 4, 3, 2,, NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C). DEGRADATION CURVE RADIATION PATTERN TYPICAL CHARACTERISTICS T CASE = 25 C NO PRE BURN-IN PERFORMED SPECTRAL OUTPUT I F = 5mA T j = 68 C,, STRESS TIME, (hrs) I F = 25mA T j = 95 C I F = 4mA T j = C 45 ma -3 Dev RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) POWER OUTPUT vs TEMPERATURE WAVELENGTH, λ(nm) AMBIENT TEMPERATURE ( C) Revision June 23, 23 59

60 CUSTOM PRODUCTS Opto Diode s design and manufacturing emphasis is on making LED s and Detectors for specific customer applications. To achieve this, it is important to be flexible in terms of packaging, die sizes and shapes, and wavelengths. At the present time, our technology for emitters allows us to fabricate peak wavelengths from 75nm to 94nm. The size of the emitting surfaces can range from.4" diameter to more than." on a side. We have the capability to produce monolithic linear or matrix arrays, and line sources. The following pages detail some of the custom products we have made for other customers over the years. If you can t find what you want in the standard product section of this catalog, call us with your custom requirements. Our technology usually allows us to turn around specific wavelength or emitting size requirements in 4 weeks or less at a cost much lower than found within the industry. 6

61 DETECTORS Opto Diode has developed the first commercially available GaAlAs detectors that can compete with standard silicon photodiodes in terms of size, cost, responsivity and noise. These detectors have the added benefit of a responsivity range that is nearly identical to the emission spectrum of GaAlAs 88nm IRLED s. This narrow detector band gives a ratio between LED emission generated current and background ambient tungsten lighting that is 6 times better than unfiltered silicon photodiodes and 3 times better than silicon photodiodes using RG85 glass! Similar or better results are noted in fluorescent and sunlight illuminated areas. Our standard detector sizes have active areas mm 2 and 5mm 2 that are housed in a TO-8 and TO-5 package respectively. Please call us if you have a special interest in coarse geometry linear arrays, bi-cells, quad cells, or special single element sizes. If you would like to learn more about this unique technology and how it might help to eliminate your signal to ambient light current problems, please call and ask for our detector application note. 6

62 HI-REL INFRARED EMITTNG DIODES FOR SPACE AND MILITARY APPLICATIONS 62

63 HI-REL INFRARED EMITTING DIODES The recommended testing program for all hi-rel IRLEDs follows the general requirements of Mil-S-95. The customer may specify the testing program(s) outlined on the next two pages, or supply us with a detailed specification. When specifying our program, indicate if screening alone or screening with a combination of Group A, B and C inspections is required. SCREENING REQUIREMENTS STEPS SCREEN METHOD CONDITIONS LTPD Internal visual (precap) inspection MIL-STD-75 Per our specification % 2 High temp life (stabilization bake) 32 T A = max storage temp t = 24 hours minimum % 3 Thermal shock (temp cycling) 5 Min to max storage temp, 2 cycles, minute dwell at each extreme % 4 Constant acceleration 26 Y dir., 2, Gs min % 5 Fine leak test 7H Per specification % 6 Gross leak test 7C or E Per specification % 7 Interim electrical measurements Read & record P o % 8 9 Power burn-in End point measurements 38 I F = max current T C = 25 C (or T A as applicable) t = 96 hours minimum Read & record P o read V F & V R % % Delta endpoint of P o P o = +3% / 5% % GROUP A INSPECTION STEPS TEST METHOD CONDITIONS LTPD Visual and mechanical inspection 2 Subgroup Subgroup 2 Radiant power output MIL-STD Per mechanical drawing, I.D. damage, lens cracks, etc. T A = 25 C, I F per spec Forward voltage 4 T A = 25 C, I F per spec 4 Reverse breakdown 46 T A = 25*C, I R per spec 63

64 HI-REL INFRARED EMITTING DIODES GROUP B INSPECTION MIL-STD-75 STEPS TEST METHOD CONDITIONS LTPD Subgroup Solderability Subgroup 2 Thermal shock Fine leak test Gross leak test End point measurements Subgroup 3 Beginning point measurements Steady state life test End point measurements Delta endpoint of P o Subgroup 4** Decap internal visual Bond strength Subgroup 6 Beginning point measurements High temp life (non-operating) End point measurements H 7 C or E Min to max storage temp, 25 cycles, minute dwell at each extreme Per specification Read & record P o, V F, V R Read & record P o I F = max current T C = 25 C (or T A as applicable) t = 34 hours minimum Read & record P o, V F, V R P o = +3%/ 5% device/ failures As specified, failures allowed Read & record P o T A = max storage temp t = 34 hours minimum Read & record P o, V F, V R GROUP C INSPECTION MIL-STD-75 STEPS TEST METHOD CONDITIONS LTPD Subgroup Physical dimensions Subgroup 2 Thermal shock (glass strain) Fine leak test Gross leak test Moisture resistance External visual End point measurements A 7H 7 C or E 2 7 Per Mechanical drawing Per specification Omit initial conditioning I.D. damage, lens cracks, etc. Read & record P o, V F, V R 5 Subgroup 3 8 Shock 26 Non-operating, 5 Gs,.5ms, 5 blows ea. dir. 9 Vibration, variable frequency 256 Constant acceleration 26 One minute each X, Y, and Z axes, 2K Gs min. End point measurements Read & record P o, V F, V R Subgroup 4** 5 2 Salt atmosphere 4 Subgroup 6 3 Beginning point measurements Read & record P o 4 Steady state life test 26 I F = max current T C = 25 C (or T A as applicable) t = hours minimum 5 End point measurements Read & record P o, V F, V R 6 Delta endpoint of P o P o = +3%/ 5% **Except for pill packages 64

65 HI-REL RAD HARD IR EMITTERS OD-8W GLASS.6 HIGH MAX MIN..7. ANODE (CASE) CATHODE FEATURES Designed for high radiation tolerance Excellent power degradation characteristics High power output Fast response Hermetically sealed metal package MIL-S-95 screening available No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 5Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 8mW ma 3A 3V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 65

66 HI-REL RAD HARD IR EMITTERS OD-8W 2 THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS POWER OUTPUT vs NEUTRON IRRADIATION TESTED ENERGY GREATER THAN Kev DEGRADATION CURVE I F = ma I F = 5mA I F = 2mA T CASE = 25 C NO PRE BURN-IN PERFORMED NEUTRON FLUENCE (neutrons/cm 2 ) STRESS TIME, (hrs) RADIATION PATTERN.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz WAVELENGTH, λ(nm).,, FORWARD CURRENT, I F (ma) Revision February 26, 23 66

67 HI-REL RAD HARD IR EMITTERS OD-8L GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES Designed for high radiation tolerance Excellent power degradation characteristics High power output Fast response Hermetically sealed metal package MIL-S-95 screening available No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 5Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 8mW ma 3A 3V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 67

68 HI-REL RAD HARD IR EMITTERS OD-8L 2 THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS POWER OUTPUT vs NEUTRON IRRADIATION TESTED ENERGY GREATER THAN Kev DEGRADATION CURVE I F = ma I F = 5mA I F = 2mA T CASE = 25 C NO PRE BURN-IN PERFORMED NEUTRON FLUENCE (neutrons/cm 2 ) STRESS TIME, (hrs) RADIATION PATTERN.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz WAVELENGTH, λ(nm).,, FORWARD CURRENT, I F (ma) Revision February 26, 23 68

69 HI-REL RAD HARD IR EMITTERS OD-8F GLASS DOME MIN..7 ANODE (CASE). CATHODE FEATURES Designed for high radiation tolerance Excellent power degradation characteristics High power output Fast response Hermetically sealed metal package MIL-S-95 screening available No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 5Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 8mW ma 3A 3V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 4 C/W Typical 35 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 69

70 HI-REL RAD HARD IR EMITTERS OD-8F 2 THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS POWER OUTPUT vs NEUTRON IRRADIATION TESTED ENERGY GREATER THAN Kev DEGRADATION CURVE I F = ma I F = 5mA I F = 2mA T CASE = 25 C NO PRE BURN-IN PERFORMED NEUTRON FLUENCE (neutrons/cm 2 ) STRESS TIME, (hrs) RADIATION PATTERN.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz WAVELENGTH, λ(nm).,, FORWARD CURRENT, I F (ma) Revision February 26, 23 7

71 HI-REL RAD HARD IR EMITTERS OD-8PP FEATURES. R GLASS DOME CATHODE ANODE Designed for high radiation tolerance Super high reliability High power output Fast response Hermetically sealed miniature pill package MIL-S-95 screening available No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I R = µa V R = V mw nm nm Deg pf nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 5Hz) 2 Reverse Voltage Lead Soldering Temperature Storage and Operating Temperature Range Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 8mW ma 3A 3V 24 C -55 C to 25 C Revision February 26, 23 7

72 HI-REL RAD HARD IR EMITTERS OD-8PP MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS PEAK FORWARD CURRENT, Ip (amps). t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS 2 POWER OUTPUT vs NEUTRON IRRADIATION TESTED ENERGY GREATER THAN Kev NEUTRON FLUENCE (neutrons/cm 2 ) DEGRADATION CURVE I F = 5mA T CASE = 25 C NO PRE BURN-IN PERFORMED STRESS TIME, (hrs) RADIATION PATTERN.5.4 POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT BEAM ANGLE, θ(deg) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz WAVELENGTH, λ(nm).,, FORWARD CURRENT, I F (ma) Revision February 26, 23 72

73 HI-REL GaAlAs IR EMITTERS OD-88WJ GLASS.6 HIGH MAX MIN..7. ANODE (CASE) CATHODE FEATURES High reliability LPE GaAlAs IRLEDs High power output 88nm peak emission Hermetically sealed TO-46 package MIL-S-95 screening available No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 4 C/W Typical 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 73

74 HI-REL GaAlAs IR EMITTERS OD-88WJ 2 THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS POWER DISSIPATION (mw) NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS DEGRADATION CURVE I F = 2mA I F = 5mA I F = ma T CASE = 25 C UNITS PRE CONDITIONED AT I F = 8mA, t = 68 HOURS RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) 4 FORWARD I-V CHARACTERISTICS.5.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, I F (amps) 3 2 RELATIVE POWER OUTPUT FORWARD VOLTAGE, V F (volts) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT, POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 74

75 HI-REL GaAlAs IR EMITTERS OD-88LJ GLASS DOME MIN. ANODE (CASE) FEATURES High reliability LPE GaAlAs IRLEDs High power output 88nm peak emission Hermetically sealed TO-46 package MIL-S-95 screening available No internal coatings CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 37 C/W Typical 2 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 75

76 HI-REL GaAlAs IR EMITTERS OD-88LJ MAXIMUM RATINGS POWER DISSIPATION (mw) THERMAL DERATING CURVE NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). MAXIMUM PEAK PULSE CURRENT t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS DEGRADATION CURVE I F = 2mA I F = 5mA I F = ma T CASE = 25 C UNITS PRE CONDITIONED AT I F = 8mA, t = 68 HOURS STRESS TIME, (hrs) RADIATION PATTERN BEAM ANGLE, θ(deg) 4 FORWARD I-V CHARACTERISTICS.5.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, I F (amps) 3 2 RELATIVE POWER OUTPUT FORWARD VOLTAGE, V F (volts) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT, POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 76

77 HI-REL GaAlAs IR EMITTERS OD-88FJ GLASS DOME MIN. ANODE (CASE) FEATURES High reliability LPE GaAlAs IRLEDs High power output 88nm peak emission Hermetically sealed TO-46 package MIL-S-95 screening available No internal coatings CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = ma I F = 5mA I F = ma I R = µa V R = V mw nm nm Deg pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (/6" from case for sec) Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 24 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-65 C TO 5 C 5 C 37 C/W Typical 2 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25 C Revision February 26, 23 77

78 HI-REL GaAlAs IR EMITTERS OD-88FJ MAXIMUM RATINGS POWER DISSIPATION (mw) THERMAL DERATING CURVE NO HEAT SINK INFINITE HEAT SINK AMBIENT TEMPERATURE ( C) PEAK FORWARD CURRENT, Ip (amps). MAXIMUM PEAK PULSE CURRENT t = µs t = µs t = 5µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS DEGRADATION CURVE I F = 2mA I F = 5mA I F = ma T CASE = 25 C UNITS PRE CONDITIONED AT I F = 8mA, t = 68 HOURS RADIATION PATTERN STRESS TIME, (hrs) BEAM ANGLE, θ(deg) 4 FORWARD I-V CHARACTERISTICS.5.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, I F (amps) 3 2 RELATIVE POWER OUTPUT FORWARD VOLTAGE, V F (volts) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT, POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz , WAVELENGTH, λ(nm),, FORWARD CURRENT, I F (ma) Revision February 26, 23 78

79 HI-REL GaAlAs IR EMITTERS OD-88PP FEATURES. R GLASS DOME ANODE High reliability LPE GaAlAs IRLEDs High power output 88nm peak emission Hermetically sealed miniature pill package MIL-S-95 screening available No internal coatings.6.24 CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emission Wavelength, λ P Spectral Bandwidth at 5%, λ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R Capacitance, C Rise Time Fall Time I F = 5mA I F = 5mA I F = 5mA I R = µa V R = V mw nm nm Deg pf µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25 C CASE Power Dissipation Continuous Forward Current Peak Forward Current (µs, 4Hz) 2 Reverse Voltage Lead Soldering Temperature (sec) Storage and Operating Temperature Range Derate per Thermal Derating Curve above 25 C 2 Derate linearly above 25 C 9mW ma 3A 5V 24 C -55 C to 25 C Revision February 26, 23 79

80 HI-REL GaAlAs IR EMITTERS OD-88PP MAXIMUM PEAK PULSE CURRENT MAXIMUM RATINGS PEAK FORWARD CURRENT, Ip (amps). t = µs t = 5µs t = µs I p t T D = t T... DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS DEGRADATION CURVE I F = 5mA T CASE = 25 C NO PRE BURN-IN PERFORMED STRESS TIME, (hrs) RADIATION PATTERN BEAM ANGLE, θ(deg) 4 FORWARD I-V CHARACTERISTICS.5.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, I F (amps) 3 2 RELATIVE POWER OUTPUT FORWARD VOLTAGE, V F (volts) AMBIENT TEMPERATURE ( C) SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT POWER OUTPUT, P o (mw) DC PULSE µs, Hz , WAVELENGTH, λ(nm).,, FORWARD CURRENT, I F (ma) Revision February 26, 23 8

81 HIGH OUTPUT BLUE LED OD-469L FEATURES Narrow beam angle Convenient TO-39 package with leads Hermetic package Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Dominant Emission Wavelength, λ d Spectral Bandwidth at 5%, Δλ Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R I F = 35mA I F = 35mA I F = 35mA I R = 2μA mw nm nm Deg ABSOLUTE MAXIMUM RATINGS AT 25 C Power Dissipation (Infinite Heatsink) Continuous Forward Current Peak Forward Current (/ duty khz) Reverse Voltage Lead Soldering Temperature (/6" from case for sec) mw 35mA 2A 5V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-55 C TO C 25 C 5 C/W Typical 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads. 2 Air circulating at a rapid rate to keep case temperature at 25 C. Revision February 26, 23 8

82 HIGH OUTPUT BLUE LED OD-469L POWER DISSIPATION (mw),3,2,, THERMAL DERATING CURVE INFINITE HEAT SINK NO HEAT SINK AMBIENT TEMPERATURE ( C) RADIATION PATTERN BEAM ANGLE, θ(deg) Revision February 26, 23 82

83 HIGH OUTPUT RED LED OD-624L FEATURES Narrow beam angle Convenient TO-39 package with leads Hermetic package Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Total Power Output, P o Peak Emmision Wavelength, λ P Spectral Bandwidth at 5%, Δλ Dominant Wavelength, λ d Half Intensity Beam Angle, θ Forward Voltage, V F Reverse Breakdown Voltage, V R I F = 35mA I F = 35mA I F = 35mA I F = 35mA I R = 5μA mw nm nm nm Deg ABSOLUTE MAXIMUM RATINGS AT 25 C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (/6" from case for sec) 5mA V 26 C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, R THJA Thermal Resistance, R THJA 2-55 C TO C 5 C 5 C/W Typical 6 C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads. 2 Air circulating at a rapid rate to keep case temperature at 25 C. Revision February 26, 23 83

84 HIGH OUTPUT RED LED OD-624L POWER DISSIPATION (mw),3,2,, THERMAL DERATING CURVE INFINITE HEAT SINK NO HEAT SINK AMBIENT TEMPERATURE ( C) RADIATION PATTERN BEAM ANGLE, θ(deg) Revision February 26, 23 84

85 NIR/RED ENHANCED 5 mm 2 PHOTODIODE-PREAMPLIFIER ODA-5W-K V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V ±. mv Dark Offset Noise V s = ± µv rms BW =. to 8 khz Sensitivity V s = ± V/mW λ = 94 nm Frequency Response (-3 db) V s = ± khz λ = 94 nm NEP λ = 94 nm 6.76 pw/ Hz Transimpedence Gain kω Supply Current V s = ± 5 V ma THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 225 mw 25 to + C +26 C Revision February 26, 23 85

86 NIR/RED ENHANCED 5 mm 2 PHOTODIODE-PREAMPLIFIER ODA-5W-K 7 TYPICAL SPECTRAL RESPONSE 6 RESPONSIVITY (V/mW) WAVELENGTH (nm) Revision February 26, 23 86

87 BLUE/GREEN ENHANCED 5 mm 2 PHOTODIODE-PREAMPLIFIER ODA-5WB-K V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 Blue enhanced detector SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V ±. mv Dark Offset Noise V s = ± µv rms BW =. to 8 khz Sensitivity V s = ± V/mW λ = 45 nm Frequency Response (-3 db) V s = ± khz λ = 94 nm NEP λ = 94 nm 6.76 pw/ Hz Transimpedence Gain kω Supply Current V s = ± 5 V ma THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 225 mw 25 to + C +26 C Revision February 26, 23 87

88 BLUE/GREEN ENHANCED 5 mm 2 PHOTODIODE-PREAMPLIFIER ODA-5WB-K 7 TYPICAL SPECTRAL RESPONSE 6 RESPONSIVITY (V/mW) WAVELENGTH (nm) Revision February 26, 23 88

89 NIR/RED ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6W-M V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V.2 ± 2 mv Dark Offset Noise V s = ± µv rms BW =. to Hz Sensitivity V s = ± 5 V V/µW λ = 94 nm Frequency Response (-3 db) V s = ± 5 V 9 Hz λ = 94 nm NEP λ = 94 nm.8 pw/ Hz Transimpedence Gain MΩ Supply Current µa THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 3 mw 25 to + C +26 C Revision February 26, 23 89

90 NIR/RED ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6W-M 7 TYPICAL SPECTRAL RESPONSE 6 RESPONSIVITY (V/µW) WAVELENGTH (nm) Revision February 26, 23 9

91 BLUE/GREEN ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6WB-M V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 Blue enhanced detector SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V.2 ± 2 mv Dark Offset Noise V s = ± µv rms BW =. to Hz Sensitivity V s = ± 5 V 2 28 V/µW λ = 45 nm Frequency Response (-3 db) V s = ± 5 V 9 Hz λ = 94 nm NEP λ = 94 nm.8 pw/ Hz Transimpedence Gain MΩ Supply Current µa THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 3 mw 25 to + C +26 C Revision February 26, 23 9

92 BLUE/GREEN ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6WB-M 7 TYPICAL SPECTRAL RESPONSE 6 RESPONSIVITY (V/µW) WAVELENGTH (nm) Revision February 26, 23 92

93 NIR/RED ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6W-5M V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V ± 2 mv Dark Offset Noise V s = ± µv rms BW =. to 35 Hz Sensitivity V s = ± 5 V V/µW λ = 94 nm Frequency Response (-3 db) V s = ± 5 V 3 Hz λ = 94 nm NEP λ = 94 nm.6 pw/ Hz Transimpedence Gain 5 MΩ Supply Current µa THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 3 mw 25 to + C +26 C Revision February 26, 23 93

94 NIR/RED ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6W-5M 35 TYPICAL SPECTRAL RESPONSE 3 RESPONSIVITY (V/µW) WAVELENGTH (nm) Revision February 26, 23 94

95 BLUE/GREEN ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6WB-5M V out CASE +V MIN FEATURES Large active area Low noise.3.35 GND (.2 PIN CTRS) V (.325) (.2 MAX) High sensitivity Custom gains available Hermetically sealed TO-39 Blue enhanced detectors SHOWN WITH CAP REMOVED FOR CLARITY RoHS R C D IN IN U ufd + V V OUT V. ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Dark Offset V s = ± 5 V ± 2 mv Dark Offset Noise V s = ± µv rms BW =. to 35 Hz Sensitivity V s = ± 5 V 4 V/µW λ = 45 nm Frequency Response (-3 db) V s = ± 5 V 3 Hz λ = 94 nm NEP λ = 94 nm.6 pw/ Hz Transimpedence Gain 5 MΩ Supply Current µa THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (/6" from case for 3 secconds max) ± 5 to ± 5V 3 mw 25 to + C +26 C Revision February 26, 23 95

96 BLUE/GREEN ENHANCED 6 mm 2 PHOTODIODE-PREAMPLIFIER ODA-6WB-5M 35 TYPICAL SPECTRAL RESPONSE 3 RESPONSIVITY (V/µW) WAVELENGTH (nm) Revision February 26, 23 96

97 PHOTODIODE mm 2 ODD- FEATURES TO-8 package Low cost format Low dark current Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance.35mm 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 97

98 PHOTODIODE mm 2 ODD- RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 98

99 PHOTODIODE mm 2 ODD-B FEATURES TO-8 package Low cost format Low dark current Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance.35mm 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 99

100 PHOTODIODE mm 2 ODD-B RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23

101 PHOTODIODE mm 2 ODD-W GLASS.6 HIGH MAX.2. MIN. CATHODE (CASE) FEATURES TO-8 package Low cost format Low dark current Low capacitance MAX. ANODE.4 45 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance.35mm 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature /6" from case for seconds. -55 C TO C C 26 Revision February 26, 23

102 PHOTODIODE mm 2 ODD-W RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 2

103 PHOTODIODE mm 2 ODD-WB GLASS.6 HIGH MAX.2. MIN. CATHODE (CASE) FEATURES TO-8 package Low cost format Low dark current Low capacitance MAX. ANODE.4 45 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance.35mm 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature /6" from case for seconds. -55 C TO C C 26 Revision February 26, 23 3

104 PHOTODIODE mm 2 ODD-WB RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 4

105 RED ENHANCED 3.mm 2 X 2 BI-CELL PHOTODIODE ODD-3W-2 ANODE CELL # VIEWING ANGLE MIN FEATURES Red enhanced Low noise High response High shunt resistance Low profile TO-5 package COMMON CATHODE CASE GROUND ANODE CELL #2.2.2 MAX.2 GLASS HEIGHT ACTIVE AREA POSITION RELATIVE TO ±.358/.37 DIMENSION ±.".8 RoHS. [2.82].4 [.] GAP ANODE CELL # CELL #. [2.82] 2 X.48 [.22] ACTIVE AREA 2 CELL #2 COMMON CATHODE CASE GROUND 2 X. [2.54] ACTIVE AREA 3 ANODE CELL #2 ELECTRO-OPTICAL CHARACTERISTICS AT 25 C CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS Dark Current, I D Shunt Resistance, R SH Junction Capacitance, C J Junction Capacitance, C J Spectral Application Range, λrange Responsivity, R Responsivity, R Breakdown Voltage, V R Noise Equivalent Power, NEP Response Time, t r Response Time, t r V R = 5 V V R = mv V R = V, f = MHz V R = V, f = MHz Spot Scan λ = 633 nm, V R = V λ = 9 nm, V R = V I R = µa V R = V, λ = 95 nm RL = 5 Ω, V R = V RL = 5 Ω, V R = V x na MΩ pf pf nm A/W A/W V W/ HZ nsec nsec Response time of % to 9% is specified at 66 nm. ABSOLUTE MAXIMUM RATINGS AT 25 C PARAMETER MIN MAX UNITS Reverse Voltage, V R Storage Temperature, T STG Operating Temperature, T O Lead Soldering Temperature (/6" from case for 3 sec) V C C C Revision February 26, 23 5

106 RED ENHANCED 3.mm 2 X 2 BI-CELL PHOTODIODE ODD-3W-2 RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 6

107 PHOTODIODE 5mm 2 ODD-5W FEATURES TO-5 hermetic package Circular active area Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 2.52mm 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 7

108 PHOTODIODE 5mm 2 ODD-5W RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 8

109 PHOTODIODE 5mm 2 ODD-5WB FEATURES TO-5 hermetic package Circular active area Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 2.52mm 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 9

110 PHOTODIODE 5mm 2 ODD-5WB RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23

111 PHOTODIODE 5mm 2 - ISOLATED ODD-5WISOL CASE (NO CONNECTION) FEATURES TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 2.52mm 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23

112 PHOTODIODE 5mm 2 - ISOLATED ODD-5WISOL RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 2

113 PHOTODIODE 5mm 2 - ISOLATED ODD-5WBISOL CASE (NO CONNECTION) FEATURES TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 2.52mm 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 3

114 PHOTODIODE 5mm 2 - ISOLATED ODD-5WBISOL RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 4

115 PHOTODIODE 5mm 2 ODD-5W FEATURES TO-5 hermetic package Optimized die size for maximum signal Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 6.27mm x 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 5

116 PHOTODIODE 5mm 2 ODD-5W RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 6

117 PHOTODIODE 5mm 2 ODD-5WB FEATURES TO-5 hermetic package Optimized die size for maximum signal Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 6.27mm x 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 7

118 PHOTODIODE 5mm 2 ODD-5WB RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 8

119 PHOTODIODE 2mm 2 ODD-2W FEATURES TO-8 hermetic package Circular active area Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 4mm 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 9

120 PHOTODIODE 2mm 2 ODD-2W RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 2

121 PHOTODIODE 2mm 2 ODD-2WB FEATURES TO-8 hermetic package Circular active area Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 4mm 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 2

122 PHOTODIODE 2mm 2 ODD-2WB RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 22

123 PHOTODIODE 42mm 2 ODD-42W FEATURES TO-8 hermetic package Optimized die size for maximum signal Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 9.9mm x 632nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 23

124 PHOTODIODE 42mm 2 ODD-42W RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) 3. DARK CURRENT VS VOLTAGE RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 24

125 PHOTODIODE 42mm 2 ODD-42WB FEATURES TO-8 hermetic package Optimized die size for maximum signal Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Series Resistance 9.9mm x 45nm V R = V I R = A V R = V V R = V V f = V mm 2 A/W na pf nsec Ohms THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature -55 C TO C C 26 /6" from case for seconds. Revision February 26, 23 25

126 PHOTODIODE 42mm 2 ODD-42WB RELATIVE CAPACITANCE CAPACITANCE vs BIAS VOLTAGE BIAS VOLTAGE (V).7 TYPICAL SPECTRAL RESPONSE.6.5 RESPONSIVITY WAVELENGTH (nm) DARK CURRENT VS VOLTAGE 3. RELATIVE DARK CURRENT (ld) REVERSE VOLTAGE (Vr) Revision February 26, 23 26

127 SURFACE MOUNT PHOTODIODE WITH DAYLIGHT FILTER ODD-9- Dimensions are in metric [inch] units FEATURES Daylight filter High sensitivity Low capacitance Short switching time Surface mount package RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Range of Spectral Bandwidth, λ.5 Wavelength of Peak Sensitivity, λ P Responsivity Reverse Dark Current, I P Reverse Breakdown Voltage, B VR Total Capacitance, C t Rise/Fall Time, t r /t f - - λ p = 94nm V R = V I R = µa V R = 3V, f = MHz V R = V, R L = KΩ / nm nm A/W na pf nsec THERMAL PARAMETERS Operating Temperature Range Storage Temperature Range Power Dissipation at (or below) 25 C Free Air Temperature Soldering Temperature (Soldering time 5 sec max.) -25 C TO +85 C -4 C TO +85 C 5mW 26 C Revision February 26, 23 27

128 SURFACE MOUNT PHOTODIODE WITH DAYLIGHT FILTER ODD-9- RELATIVE SPECTRAL SENSITIVITY SPECTRAL SENSITIVITY. Ta = 25 C WAVELENGTH λ (nm) DARK CURRENT vs AMBIENT TEMPERATURE REVERSE DARK CURRENT (na) V R = V AMBIENT TEMPERATURE Ta ( C) TERMINAL CAPACITANCE (pf) TERMINAL CAPACITANCE vs REVERSE VOLTAGE 8 f = MHz V R = 3V Ee = mw/cm REVERSE VOLTAGE (V) Revision February 26, 23 28

129 SURFACE MOUNT PHOTODIODE WITH DAYLIGHT FILTER ODD-9- Soldering Conditions. Pb-free solder temperature profile ~5 C/sec ~5 C/sec Pre-heating 8~2 C 6 sec Max Above 22 C 26 C Max sec Max 2 sec Max. Reflow soldering should not be done more than twice.2 Do not stress the PD while soldering.3 Don t flex the circuit board after soldering 2. Soldering Iron 2. Each terminal should touch the tip of soldering iron (at 28 C) for less than for three seconds. Use a minimum two second interval between soldering each terminal. Use caution as product damage is often started during hand soldering. 2.2 The tip of soldering iron (at 28 ) should be in contact with each terminal for less than three seconds. Pause for a minimum two second interval between soldering each terminal. Use caution as damage to the PD is often started during hand soldering. Revision February 26, 23 29

130 SURFACE MOUNT PHOTODIODE WITH DAYLIGHT FILTER ODD-9- Revision February 26, 23 3

131 SURFACE MOUNT PHOTODIODE ODD-9-2 Dimensions are in metric [inch] units FEATURES High sensitivity Short switching time RoHS Low capacitance Surface mount package ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Range of Spectral Bandwidth, λ.5 Wavelength of Peak Sensitivity, λ P Responsivity Reverse Dark Current, I P Reverse Breakdown Voltage, B VR Total Capacitance, C t Rise/Fall Time, t r /t f - - λ p = 94nm V R = V I R = µa V R = 3V, f = MHz V R = V, R L = KΩ / nm nm A/W na pf nsec THERMAL PARAMETERS Operating Temperature Range Storage Temperature Range Power Dissipation at (or below) 25 C Free Air Temperature Soldering Temperature (Soldering time 5 sec max.) -25 C TO +85 C -4 C TO +85 C 5mW 26 C Revision February 26, 23 3

132 SURFACE MOUNT PHOTODIODE ODD-9-2 RELATIVE SPECTRAL SENSITIVITY SPECTRAL SENSITIVITY. Ta = 25 C WAVELENGTH λ (nm) DARK CURRENT vs AMBIENT TEMPERATURE REVERSE DARK CURRENT (na) V R = V AMBIENT TEMPERATURE Ta ( C) TERMINAL CAPACITANCE (pf) TERMINAL CAPACITANCE vs REVERSE VOLTAGE 8 f = MHz V R = 3V Ee = mw/cm REVERSE VOLTAGE (V) Revision February 26, 23 32

133 SURFACE MOUNT PHOTODIODE ODD-9-2 Soldering Conditions. Pb-free solder temperature profile ~5 C/sec ~5 C/sec Pre-heating 8~2 C 6 sec Max Above 22 C 26 C Max sec Max 2 sec Max. Reflow soldering should not be done more than twice.2 Do not stress the PD while soldering.3 Don t flex the circuit board after soldering 2. Soldering Iron 2. Each terminal should touch the tip of soldering iron (at 28 C) for less than for three seconds. Use a minimum two second interval between soldering each terminal. Use caution as product damage is often started during hand soldering. 2.2 The tip of soldering iron (at 28 ) should be in contact with each terminal for less than three seconds. Pause for a minimum two second interval between soldering each terminal. Use caution as damage to the PD is often started during hand soldering. Revision February 26, 23 33

134 SURFACE MOUNT PHOTODIODE WITH DAYLIGHT FILTER ODD-9-2 Revision February 26, 23 34

135 PHOTODIODE mm 2 AXUVTi/C2 FEATURES Square active area 2 nm titanium & 5 nm carbon filter across top surface Detection range -2 nm Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Shunt Resistance, Rsh mm x mm (see graph on next page) I R = µa V R = ± m V 2 44 mm 2 nf MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds Revision February 26, 23 35

136 PHOTODIODE mm 2 AXUVTi/C2 RESPONSIVITY (A/W) RESPONSIVITY WAVELENGTH(nm) Revision February 26, 23 36

137 PHOTODIODE mm 2 AXUVAl FEATURES Square active area 5 nm aluminum filter across top surface Detection range 7-8 nm Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, Rsh Reverse Breakdown Voltage, V R Capacitance, C Response Time, tr mm x mm (see graph on next ± mv I R = µa V R = V RL = 5 Ω, V R = V mm 2 MOhms nf nsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds Revision February 26, 23 37

138 PHOTODIODE mm 2 AXUVAl RESPONSIVITY (A/W).3 RESPONSIVITY (A/W) WAVELENGTH(nm) Revision February 26, 23 38

139 PHOTODIODE 6 ELEMENT AXUV6ELG FEATURES Dimensions are in inch [metric] units. 4 pin dual in-line package Ideal for electron detection % internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25 C (Per Element) PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area 2mm x 5mm mm 2 Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Rise Time Shunt Resistance (per element) (see graphs on next page) I R = µa V R = V V R = V V f = ±mv A/W pf nsec MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision February 26, 23 39

140 PHOTODIODE 6 ELEMENT AXUV6ELG ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 4

141 PHOTODIODE 2 ELEMENT AXUV2ELG FEATURES Dimensions are in inch [metric] units. 22 pin dual in-line package Ideal for electron detection % internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25 C (Per Element) PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Rise Time Shunt Resistance (per element).75mm x 4.mm (see graphs on next page) I R = µa V R = V V R = V V f = ±mv mm 2 A/W pf nsec MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision February 26, 23 4

142 PHOTODIODE 2 ELEMENT AXUV2ELG ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 42

143 PHOTODIODE Ø9mm AXUV63HS FEATURES Circular active area Ideal for electron detection % internal QE High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Rise Time Dark Current 9mm (see graphs on next page) I R = μa V R = V RL = 5Ω, V R = 2V V R = 5V mm 2 A/W pf nsec na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision July 2, 24 43

144 PHOTODIODE 63 mm 2 AXUV63HS ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 44

145 PHOTODIODE 63 mm 2 AXUV63HS-CH FEATURES Circular active area Ideal for electron detection % internal QE High speed Hole in center of detector Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Ø9mm 63 mm 2 Responsivity, R (see graphs on next page) A/W Reverse Breakdown Voltage, V R I R = µa 6 Capacitance, C V R = V nf Rise Time V R = 5V, R L = 5Ω 2 nsec Dark Current V R = 5V na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient 2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds. 2 Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 5nm will Be Compromised. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision June 23, 23 45

146 PHOTODIODE 63 mm 2 AXUV63HS-CH ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision June 23, 23 46

147 ELECTRON DETECTION Ø5.5 mm 2 AXUV2A FEATURES Circular active area Ideal for electron detection % internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Ø5.5mm 23 mm 2 Responsivity, R (see graphs on next page) Shunt Resistance V f = ±mv MOhm Reverse Breakdown Voltage, V R I R = µa Capacitance, C V R = V.2 2 pf Rise Time V R = V, R L = 5Ω 2 usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient 2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds. 2 Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 5nm will Be Compromised. Revision June 23, 23 47

148 ELECTRON DETECTION Ø5.5 mm 2 AXUV2A ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision June 23, 23 48

149 ELECTRON DETECTION mm 2 AXUVG FEATURES Ideal for electron detection Large detection area % internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area mm x mm mm 2 Responsivity, 254nm, V R = V A/W Shunt Resistance, Rsh V B = ±mv 2 M-ohm Reverse Breakdown Voltage, V R I R = µa Capacitance, C V R = V 44 nf Rise Time V R = V, R L = 5 usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient 2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C 2-2 C TO 8 C 7 C 26 C.8" from case for seconds. 2 Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 5nm will Be Compromised. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision February 26, 23 49

150 ELECTRON DETECTION mm 2 AXUVG ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 5

151 PHOTODIODE 33 mm 2 AXUV3C FEATURES Rectangular active area Large detection area 2 anode and cathode pins Ideal for electron detection No window for extended response to below 2nm Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area 2.56mm x 5.36mm 33 mm 2 Responsivity, R (see graphs on next page) Conductive Current, I C V f =.8V ma Breakdown Voltage, V R I R = µa 5 25 Capacitance, C V R = V 4 nf Response Time V R = 5V 5 usec ± mv 5 2 MΩ THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over timeresponsivity tol ow energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Revision April 4, 25 5

152 PHOTODIODE 33 mm 2 AXUV3C ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision April 4, 25 52

153 ELECTRON DETECTION 576 mm 2 AXUV576C FEATURES Square active area Round 4 pin package Ideal for electron detection % internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area 24.mm x 24.mm mm 2 Responsivity, R (see graphs on next page) Shunt Resistance, 5 5 MOhm Reverse Breakdown Voltage, V R I R = µa 5 Capacitance, C V R = V 2 nf Rise Time, tr V R = V, R L = 5Ω 5 usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient 2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds. 2 Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 5nm will Be Compromised. Revision June 23, 23 53

154 ELECTRON DETECTION mm 2 AXUV576C ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision June 23, 23 54

155 PHOTODIODE mm 2 AXUVHS5 FEATURES SMA connector Ideal for electron detection % internal QE Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Rise Time Dark Current mm x mm (see graphs on next page) I R = μa V R = V RL = 5Ω, V R = 52V V R = 52V mm 2 A/W pf psec na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Tighten to maximum torque of 5 inch/pounds. Permanent damage will result if higher torque values are used and warranty is voided. Revision December 9, 24 55

156 PHOTODIODE mm 2 AXUVHS5 ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision December 9, 24 56

157 PHOTODIODE.8 mm 2 AXUVHS6 FEATURES SSMA connector Ideal for electron detection % internal QE Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Capacitance, C Rise Time Dark Current.29mm x.29mm (see graphs on next page) I R = µa V R = 5V V R = 52V, R L = 5Ω V R = 52V mm 2 pf psec na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature - TO 4 C -2 C TO 8 C 7 C Temperatures exceeding these parameters may create Oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. Tighten to maximum torque of 5 inch/pounds. Permament damage will result if higher torque values are used and warranty is voided. Revision July 2, 25 57

158 PHOTODIODE.8 mm 2 AXUVHS6 ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision July 2, 25 58

159 PHOTODIODE Ø.6 mm AXUVHS FEATURES SMA connector Ideal for electron detection Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Reverse Breakdown Voltage, V R Junction Capacitance ResonseTime Dark Current Ø.6mm (see graphs on next page) I R = μa V R = V V R = 52V V R = 52V mm 2 pf psec na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Maximum torque of 5 inch/pounds recommended. Permanent damage will result if higher torque values are used and warranty is voided. Revision April 4, 25 59

160 PHOTODIODE mm 2 AXUVHS ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 6

161 PHOTODIODE Ø5 mm AXUV2HS FEATURES Circular active area Ideal for electron detection % internal QE High speed Grid lines 5 microns, Pitch microns RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Ø5.mm 9.7 mm 2 Responsivity, R (see graphs on next page) A/W Reverse Breakdown Voltage, V R I R = µa 6 Capacitance, C V R = V 2 8 pf Rise Time RL = 5Ω, V R = 5V 2 nsec Dark Current V R = 5V na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision July, 23 6

162 PHOTODIODE Ø5 mm AXUV2HS ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision July, 23 62

163 QUAD ELECTRON DETECTOR 5 mm 2 AXUVPS7 FEATURES Dimensions are in inch [metric] units. Ideal for electron detection Circular active area % internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25 C (PER ELEMENT) PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, RsH Reverse Breakdown Voltage, V R Capacitance, C Rise Time (see graphs on the next page) V R = ±mv I R = µa V R = V V R = 2V, R L = 5Ω mm 2 A/W MOhms nf usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature 2 - TO 4 C -2 C TO 8 C 7 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision February 26, 23 63

164 ELECTRON DETECTION 5 mm 2 AXUVPS7 ELECTRON RESPONSE.3 RESPONSIVITY (A/W) ,, ENERGY (ev) EUV-UV PHOTON RESPONSE.3 RESPONSIVITY (A/W) WAVELENGTH (nm) UV-VIS-NIR PHOTON RESPONSIVITY.5 RESPONSIVITY (A/W) WAVELENGTH (nm) Revision February 26, 23 64

165 PHOTODIODE Ø2.5 mm 2 SXUV5 FEATURES Circular active area TO-39, 3 pin package Excellent stability after EUV exposure Windowless package for responsivity to nm Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, Rsh Reverse Breakdown Voltage, V R Capacitance, C Response Time, tr See attached ± mv I R = µa V R = V RL = 5Ω, V R = 5V 2 Ø mm 2 MOhms nf nsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds Revision February 26, 23 65

166 PHOTODIODE Ø2.5 mm 2 SXUV5 PHOTON RESPONSIVITY.35 Responsivity (A/W) Wavelength (nm) Revision February 26, 23 66

167 PHOTODIODE Ø5 mm SXUV2HS FEATURES Circular active area Ideal for EUV detection % internal QE High speed Grid lines 5 microns, Pitch microns RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Ø5.mm 9.7 mm 2 Responsivity, R (see graphs on next page) A/W Reverse Breakdown Voltage, V R I R = µa 6 Capacitance, C V R = V 2 8 pf Rise Time RL = 5Ω, V R = 5V 2 nsec Dark Current V R = 5V na THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Lead Soldering Temperature 2 - TO 4 C -2 C TO 8 C 26 C Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 5nm will be compromised. 2.8" from case for seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors prior to removing cover. Revision July, 23 67

168 PHOTODIODE Ø5 mm SXUV2HS PHOTON RESPONSIVITY.35 Responsivity (A/W) Wavelength (nm) Revision July, 23 68

169 PHOTODIODE mm 2 SXUV FEATURES Single active area Detection to nm Stable response after exposure to EUV/UV conditions Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, Rsh Reverse Breakdown Voltage, V R Capacitance, C Response Time, tr mm x mm (see graph on next ± mv I R = µa V R = V RL = 5Ω, V R = 5V 6 25 mm 2 MOhms nf nsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C 26 C.8" from case for seconds Revision February 26, 23 69

170 PHOTODIODE mm 2 SXUV PHOTON RESPONSIVITY.35 Responsivity (A/W) Wavelength (nm) Revision February 26, 23 7

171 PHOTODIODE 33 mm 2 SXUV3C FEATURES Rectangular active area Excellent stability after EUV exposure Windowless package for responsivity to nm Ceramic package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, Rsh Reverse Breakdown Voltage, V R Capacitance, C Response Time, tr 22.5 mm x 5.85 mm See attached ± mv I R = µa V R = V RL = 5Ω, V R = 5V mm 2 MOhms nf nsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature - TO 4 C -2 C TO 8 C 7 C N/A Soldering not recommended. Use with AXUV3CTS socker or equivalent. Revision February 26, 23 7

172 PHOTODIODE 33 mm 2 SXUV3C PHOTON RESPONSIVITY.35 Responsivity (A/W) Wavelength (nm) Revision February 26, 23 72

173 UV/EUV CONTINUOUS POSITION SENSOR ODD-SXUV-DLPSD FEATURES Submicron position resolution Stable response after exposure to UV/EUV 5 mm x 5 mm active area TO-8 windowless package RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25 C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Responsivity, R Dark Current ldr Reverse Breakdown Voltage, V R Capacitance, C Rise Time Shunt Resistance Inter Electrode Resistance Temp Coefficient of ID Position nm V R = 3 V I R = µa V R = 3 V V R = 3 V, R L = 5Ω V r = ± mv 5 5 5, , , 2 mm 2 A/W A/W na pf nsec MOhms Ohms Times/ C ±% Valid within 8% of length THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature C to 4 C 2 C to 8 C 7 C 26 C.8" from case for seconds Revision July 3, 24 73