Deschutes Series InGaAs Avalanche Photodiodes

Transcription

1 Features High Sensitivity: Lowcapacitance backsideilluminated design Wide Spectral Response: nm Series InGaAs Avalanche Photodiodes Reduced-Excess-Noise APDs Reduced Excess Noise: ~4x less noise than conventional APDs Options TO-46 / TO-8 package options include a broadband, doublesided anti-reflectioncoated flat window and three-stage TEC Fiber-coupling available s, Submounted Dies (with or without Temperature Sensor), and TO-8 and TO-46 Packages Custom devices available upon request Applications Freespace optical communications Laser rangefinding Optical time domain reflectometry Optical coherence tomography Fluorescence measurements, spectroscopy, chromatography and electrophoresis Telecommunications Lidar/Ladar Voxtel s VFC-1000 series of APDs delivers the best possible sensitivity for near-infrared (NIR) and short-wavelength infrared (SWIR) optical applications requiring bandwidth lower than a few hundred MHz. With low avalanche noise and high quantum efficiency over the nm spectral band, including the eyesafe wavelengths beyond 1300 nm, the VFC-1000 series of provides enhanced responsivity relative to p-i-n photodiodes, with lower noise than conventional NIR APD designs. Voxtel s thin InAlAs multiplication-region InGaAs APD technology suppresses the excess multiplication noise associated with the avalanche process, improving the signal-to-noise ratio of the detector. Although contemporary APDs achieve high responsivity through internal current gain, the usefulness of the gain is undermined by the accompanying noise. Voxtel s APDs can be operated at relatively high gain with a smaller noise penalty, providing a significant advantage. Coupling the APD to a low-noise amplifier produces a receiver with superior noise equivalent power (sensitivity). For ease of integration, these APDs are offered as a bare die or as a die on a ceramic submount with a comounted temperature sensor. Smaller footprint submounts without the temperature sensor are also available. Hermetic TO-46 or TO-8 package options allow users to easily integrate Voxtel's nm-response APDs into high-performance electro-optical systems. The TO-8 package allows for a three-stage thermoelectric cooler (TEC) that can provide a 100 C temperature differential from ambient (packages rated down to -40 C).

2 Performance 2 Responsivity (A/W) Responsivity Quantum Efficiency Wavelength (nm) Spectral responsivity and quantum efficiency of 200-µm 298K Quantum Efficiency (%) Excess Noise Factor, F k = 0.4 (Telecom APD) 2.0 Deschutes BSI APD 1.5 k = Gain, M Excess noise of the Deschutes APD, k ~ 0.2 Thermal Effects M = 10 Dark Current (A) 1*10-7 1*10-8 1*10-9 I dark = 6 x e 0.05T R 2 = * Temperature (K) Temperature (K) Effects of temperature on dark current and breakdown voltage of a 200-µm Deschutes APD at M = 10 Breakdown Voltage (V) V br = 0.034T 36.1 R 2 = 0.999

3 Submounted Die with Temperature Sensor Submounted Die without Temperature Sensor 30 μm, 2 GHz APD VFC1-EAXA VFC1-EBXA VFC1-EGXA Parameter Min Typical Max Spectral Range, λ 940 nm nm 1750 nm Active Diameter 30 μm APD Operating Gain, M Responsivity at M = 1 for λ = 1064 nm Responsivity at M = 1 for λ = 1550 nm 0.66 A/W 0.91 A/W 0.73 A/W 1.01 A/W 0.78 A/W 1.04 A/W Excess Noise Factor, F(M,k), at M = 10 Excess Noise Factor, F(M,k), at M = 15 Noise Spectral M = pa/hz 1/2 Dark M = 1 i 0.80 na 1.08 na 1.25 na Breakdown Voltage, V ii br 40 V 45 V 55 V V br / T 30 mv/k 34 mv/k 39 mv/k Maximum Instantaneous Input Power iii 125 µw 515 μm ±25 μm (-215, 215) 50-μm (-205,-205) (215,-215) 515 μm ±25 μm 3 s and Dies on Ceramic Submount without Temperature Sensor pf 2.0 GHz Dies on Ceramic Submount with Temperature Sensor pf i Gain normalized from M = 10, T = 298 K ii T = 298 K, I dark > 0.1 ma iii 10-ns 1064-nm signal at a 20-Hz pulse-repetition frequency with APD multiplication gain of M = 10 iv M > GHz v The bandwidth of a photoreceiver assembled from this APD and a user-selected TIA will also depend on the TIA selection vi Sourcing 10 µa, T = 298 K

4 Submounted Die with Temperature Sensor Submounted Die without Temperature Sensor TO-8 Packaged APD TO-46 Packaged APD 75 μm, 2 GHz APD VFC1-JAXA VFC1-JBXA VFC1-JGXA VFC1-JKAB VFC1-JKQB VFC1-JKRB VFC1-JCAA VFC1-JCQA VFC1-JCRA 4 Parameter Min Typical Max Spectral Range, λ 940 nm nm 1750 nm Active Diameter 75 μm APD Operating Gain, M Responsivity at M = 1 for λ = 1064 nm Responsivity at M = 1 for λ = 1550 nm 0.66 A/W 0.91 A/W 0.73 A/W 1.01 A/W 0.78 A/W 1.04 A/W Excess Noise Factor, F(M,k), at M = 10 Excess Noise Factor, F(M,k), at M = 15 Noise Spectral M = pa/hz 1/2 Dark M = 1 i 0.8 na 1.9 na 2.5 na Breakdown Voltage, V ii br 40 V 45 V 55 V V br / T 30 mv/k 34 mv/k 39 mv/k Maximum Instantaneous Input Power iii 1 mw s and Dies on Ceramic Submount without Temperature Sensor 0.34 pf 2.0 GHz 50-μm 525 μm (-215,215) (215,215) 75-μm 525 μm (-205,-205) (215,-215) Leveling pads have 20-μm- indium bumps. Anode and cathode pads have - indium bumps. Dies on Ceramic Submount with Temperature Sensor 0.34 pf Packaged APDs 0.76 pf Minimum Internal Temperature -40 C TEC Rating (TO-8 packages) vii A 2.0 GHz 1.28 GHz i Gain normalized from M = 10, T = 298 K ii T = 298 K, I dark > 0.1 ma iii 10-ns 1064-nm signal at a 20-Hz pulse-repetition frequency with APD multiplication gain of M = 10 iv M > 3 v The bandwidth of a photoreceiver assembled from this APD and a user-selected TIA will also depend on the TIA selection vi Sourcing 10 µa, T = 298 K vii at 298 K

5 200 μm, 1.5 GHz APD VFC1-NAXA Submounted Die with Temperature Sensor VFC1-NBXA Submounted Die without Temperature Sensor VFC1-NGXA TO-8 Packaged APD VFC1-NKAB VFC1-NKQB VFC1-NKRB with 200-µm-core/220-µm-clad step-index multi-mode fiber with SMA connector VFC1-NKSB TO-46 Packaged APD VFC1-NCAA VFC1-NCQA VFC1-NCRA with 200-µm-core/220-µm-clad step-index multi-mode fiber with SMA connector VFC1-NCSA Parameter Min Typical Max Spectral Range, λ 940 nm nm 1750 nm Active Diameter 200 μm APD Operating Gain, M Responsivity at M = 1 for λ = 1064 nm Responsivity at M = 1 for λ = 1550 nm 0.66 A/W 0.91 A/W 0.73 A/W 1.01 A/W 0.78 A/W 1.04 A/W Excess Noise Factor, F(M,k), at M = 10 Excess Noise Factor, F(M,k), at M = 15 Noise Spectral M = pa/hz 1/ pa/hz 1/2 Dark M = 1 i 6.0 na 8.1 na 10.0 na Breakdown Voltage, V ii br 40 V 45 V 55 V V br / T 30 mv/k 34 mv/k 39 mv/k Maximum Instantaneous Input Power iii 5 mw s and Dies on Ceramic Submount without Temperature Sensor 2.03 pf 1.57 GHz 50-μm 525 μm (-215,215) (215,215) 200-μm 525 μm (-205,-205) (215,-215) Leveling pads have 20-μm- indium bumps. Anode and cathode pads have - indium bumps. 5 Dies on Ceramic Submount with Temperature Sensor 2.03 pf Packaged APDs 2.5 pf Minimum Internal Temperature -40 C TEC Rating (TO-8 packages) vii A 1.57 GHz 1.28 GHz i Gain normalized from M = 10, T = 298 K ii T = 298 K, I dark > 0.1 ma iii 10-ns 1064-nm signal at a 20-Hz pulse-repetition frequency with APD multiplication gain of M = 10 iv M > 3 v The bandwidth of a photoreceiver assembled from this APD and a user-selected TIA will also depend on the TIA selection vi Sourcing 10 µa, T = 298 K vii at 298 K

6 500 μm, 275 MHz APD VFC1-PAXA Submounted Die with Temperature Sensor VFC1-PBXA Submounted Die without Temperature Sensor VFC1-PGXA TO-8 Packaged APD VFC1-PKAB VFC1-PKQB VFC1-PKRB with 200-µm-core/220-µm-clad step-index multi-mode fiber with SMA connector VFC1-PKSB TO-46 Packaged APD VFC1-PCAA VFC1-PCQA VFC1-PCRA with 200-µm-core/220-µm-clad step-index multi-mode fiber with SMA connector VFC1-PCSA 6 Parameter Min Typical Max Spectral Range, λ 940 nm nm 1750 nm Active Diameter 500 μm APD Operating Gain, M Responsivity at M = 1 for λ = 1064 nm Responsivity at M = 1 for λ = 1550 nm 0.66 A/W 0.91 A/W 0.73 A/W 1.01 A/W 0.78 A/W 1.04 A/W Excess Noise Factor, F(M,k), at M = 10 Excess Noise Factor, F(M,k), at M = 15 Noise Spectral M = pa/hz 1/2 Dark M = 1 i 40 na 60 na 90 na Breakdown Voltage, V ii br 40 V 45 V 55 V V br / T 30 mv/k 34 mv/k 39 mv/k Maximum Instantaneous Input Power iii 20 mw s and Dies on Ceramic Submount without Temperature Sensor 11.6 pf 275 MHz 735 μm (-320,320) (320,320) 50-μm 500-μm 735 μm (-310,-310) (320,-320) Leveling pads have 20-μm- indium bumps. Anode and cathode pads have - indium bumps. Dies on Ceramic Submount with Temperature Sensor 11.6 pf Packaged APDs 12.5 pf Minimum Internal Temperature -40 C TEC Rating (TO-8 packages) vii A 275 MHz 256 MHz i Gain normalized from M = 10, T = 298 K ii T = 298 K, I dark > 0.1 ma iii 10-ns 1064-nm signal at a 20-Hz pulse-repetition frequency with APD multiplication gain of M = 10 iv M > 3 v The bandwidth of a photoreceiver assembled from this APD and a user-selected TIA will also depend on the TIA selection vi Sourcing 10 µa, T = 298 K vii at 298 K

7 Mechanical Information See Die on Ceramic Submount APD Metal Submount Metal 200-μm 930 μm ±20 μm 1030 μm ±20 μm 1520 μm Temp Sense B E C E Die on Ceramic Submount with Temperature Sensor APD 370 μm Anode Cathode Cathode 940 μm 0.25 mm 0.20 mm 600 μm TO-8 Package Φ15.25 Bottom View Φ1.50 Φ0 Fiber-coupled TO-8 Package (-300,-600) (0,-600) (300,-600) Detector active area centered in package to ±0.1 mm tolerance ±0.15 mm 6.35 Side View with Cap 6.65 ±0.14 mm 0.38 ±0.03 mm 200 μm N/C N/C APD Gnd Gnd TEC 300 μm T Sense (B/C) T Sense T Sense (E) TEC V cc Out Out 0.35 mm 1) Gnd 2) APD 3) TEC 4) T Sense 5) TEC 6) T Sense 7) Out 8) Gnd 9) Out *10) V cc 11) N/C 12) N/C *3.3 V on Vcc for RDC1 & RVC1 Series; 5 V for RYC1 Series. Pinout 7 Φ3.00 Φ9.00 Φ ± TO-46 Package in 183 mm Φ0.026 Φ Φ0.212 Φ0.209 Φ0.171 Φ0.161 Φ0.048 Φ max ) APD Cathode 2) APD Anode 3) Gnd T Sense 4) T Sense Φ0.019 Φ0.016 Φ0.100 Side View with Cap 45 ±0.5 Top View Header Only Pinout

8 Ordering Information for APD Products V F C Device Device Type Detector Detector Diameter Package Window Rev. V = APD F = Linear Mode C = Deschutes Series 1 = Single Element E = 30 µm J = 75 µm N = 200 µm P = 500 µm A = B = Ceramic Submount w/temp Sensor C = TO-46 G = Ceramic Submount w/out Temp Sensor K = TO-8 w/3-stage TEC A = Flat Q = 62.5/125 (0.27 NA) FC R = 105/125 (0.22 NA) FC S = 200/220 FC X = None Not all combinations of product features are available. For specific ordering information and parts availability, contact Voxtel. Caution During APD Operation If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics. The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operating point that is safe at room temperature may put the APD into breakdown at low temperature. The approximate temperature dependence of the breakdown voltage is published in the specification table, but caution should be exercised when an APD is cooled. Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher than the readout s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line. As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both. Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system. Voxtel Literature No. Packaged APDs, Version date 24Apr2018 Voxtel makes no warranty or representation regarding its products specific application suitability and may make changes to the products described without notice.