Ordering number : ENA81A MCH6664 P-Channel Power MOSFET V, 1.A, mω, Dual MCPH6 http://onsemi.com Features ON-resistance Pch : RDS(on)1=mW (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS -- V Gate to Source Voltage VGSS ± V Drain Current (DC) ID --1. A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% --6 A Power Dissipation PD When mounted on ceramic substrate (9mm.8mm) 1unit.8 W Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Lead Temperature for Soldering Purposes, mm from Case for 1 Seconds This product is designed to ESD immunity < V*, so please take care when handling. * Machine Model Thermal Resistance Ratings TL 6 C Parameter Symbol Value Unit Junction to Ambient RθJA 16. C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta= C Parameter Symbol Conditions Value min. typ. max. Drain to Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V -- V Zero-Gate Voltage Drain Current IDSS VDS=--V, VGS=V --1 ma Gate to Source Leakage Current IGSS VGS=±16V, VDS=V ±1 ma Gate Threshold Voltage VGS(th) VDS=--1V, ID=--1mA --1. --.6 V Forward Transconductance g FS VDS=--1V, ID=--.8A 1. S Static Drain-to-Source On-State Resistance Input Capacitance RDS(on)1 ID=--.8A, VGS=--1V mw RDS(on) ID=--.4A, VGS=--4.V 9 mw RDS(on) ID=--.4A, VGS=--4V 48 641 mw Ciss Output Capacitance Coss VDS=--1V, f=1mhz pf Unit 8 pf Reverse Transfer Capacitance Crss 16 pf Turn-ON Delay Time td(on) 4 ns Rise Time tr. ns See specified Test Circuit. Turn-OFF Delay Time td(off) 1 ns Fall Time tf.4 ns Total Gate Charge Qg. nc Gate to Source Charge Qgs VDS=--1V, VGS=--1V, ID=--1.A.6 nc Gate to Drain Miller Charge Qgd.49 nc Forward Diode Voltage VSD IS=--1.A, VGS=V --.9 --1. V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 14 January, 14 1114HK TC-89/1114HK PE No. A81-1/
Static Drain to Source On-State Resistance, R DS (on) -- mω --1.6 --1.4 --1. --1. --.8 --.6 --.4 --. 1 9 6 4 1 --1.V --8.V 8 I D = --.4A --.8A ID -- VDS --6.V --4.V --4.V Ta= C --.V --.V V GS = --.V --.1 --. --. --.4 --. --.6 --. --.8 --.9 --1. Drain to Source Voltage, V DS -- V RDS(on) -- VGS Ta= C IT1666 Static Drain to Source On-State Resistance, R DS (on) -- mω --. V DS = --1V --1.8 --1.6 --1.4 --1. --1. --.8 --.6 --.4 --. 1 9 8 6 4 1 ID -- VGS(th) Gate to Source Voltage, V GS -- V RDS(on) -- Ta VGS= --4.V, I D = --.4A VGS = --4.V, I D= --.4A -- C --. --1. --1. --. --. --. --. --4. C Ta= C V GS = --1.V, I D = --.8A IT166 Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns -- --4 --6 --8 --1 --1 --14 --16 Gate to Source Voltage, V GS -- V IT1661 gfs -- ID 1 V DS = --1V 1. Ta= -- C.1 --.1 --.1 --1. --1 IT166 1 SW Time -- ID V DD = --1V V GS = --1V 1 C td (on) tr C td(off) tf Forward Diode Current, I S -- A Ciss, Coss, Crss -- pf --6 --4 -- 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT166 IS -- VSD --1 V GS =V --1. --.1 --.1 --.1 --. --.4 --.6 --.8 --1. --1. Forward Diode to Source Voltage, V SD -- V IT1661 Ciss, Coss, Crss -- VDS 1 f=1mhz 1 Ta= C Ciss Coss Crss C -- C 1. --.1 --.1 --1. --1 IT166 1 -- --1 --1 -- -- Drain to Source Voltage, V DS -- V IT166 -- No. A81-/
Gate to Source Voltage, V GS -- V Allowable Power Dissipation, P D -- W --1 VDS = --1V --9 I D = --1.A --8 -- --6 -- --4 -- -- --1 1..8.6.4. VGS -- Qg. 1. 1.... Total Gate Charge, Qg -- nc PD -- Ta IT166 When mounted on ceramic substrate (9mm.8mm) 1unit --1 --1. --.1 I DP = --6A (PW 1μs) I D = --1.A S O A Operation in this area is limited by R DS (on). 1ms DC operation 1ms Ta= C Single pulse --.1 When mounted on ceramic substrate (9mm.8mm) 1unit --.1 --.1 --1. --1 --1 Drain to Source Voltage, V DS -- V IT1664 1ms 1μs 1 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT166 RθJA -- Pulse Time Thermal Resistance, R θja -- ºC/W 1 1 1 Duty Cycle=...1...1 Single Pulse When mounted on ceramic substrate (9mm.8mm) 1unit.1.1.1.1.1.1 Pulse Time, PT -- s,1 1. 1 HD1418 No. A81-/
Package Dimensions MCH6664-TL-W SC-88FL / MCPH6 CASE 419AS ISSUE O unit : mm 1:Source1 :Gate1 :Drain 4:Source :Gate 6:Drain1 Recommended Soldering Footprint.4.1.6.6.6 Ordering & Package Information Packing Type:TL Marking Device Package Shipping note MCH6664-TL-W MCPH6, SC-88,SOT-6, pcs. / reel Pb-Free and Halogen Free TL LOT No. XR LOT No. Electrical Connection 6 4 1 Switching Time Test Circuit V --1V VIN PW=1μs D.C. 1% VIN G VDD= --1V D ID= --.8A RL=18.Ω VOUT P.G Ω S MCH6664 No. A81-4/
Note on usage : Since the MCH6664 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A81-/