Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications
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- Lynette Franklin
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1 Ordering number : ENA8A TF48 N-Channel JFET V,.6 to.ma,.ms, USFP Applications Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Ultrasmall package facilitates miniaturization in end products : mm.6mm.mm (max.mm) Small IGSS : max -na (VGS= -V, VDS=V) Small Ciss : typ 4pF (VDS= 1V, VGS=V, f=1mhz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX V Gate-to-Drain Voltage VGDS -- V Gate Current IG 1 ma Drain Current ID 1 ma Allowable Power Dissipation PD mw Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) to. TF48--TL-H TF48--TL-H Product & Package Information Package : USFP JEITA, JEDEC : - Minimum Packing Quantity : 1, pcs./reel Packing Type: TL TL Marking LOT No. A LOT No. Electrical Connection : Source : Drain : Gate USFP 1 1 : Source : Drain : Gate Top view Semiconductor Components Industries, LLC, 1 August, 1 1 TKIM/91GB TKIM TC-4 No. A8-1/6
2 TF48 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--1μA, VDS=V -- V Gate-to-Source Leakage Current IGSS VGS=--V, VDS=V -- na Cutoff Voltage VGS(off) VDS=1V, ID=1μA V Drain Current IDSS VDS=1V, VGS=V.6*.* ma Forward Transfer Admittance yfs VDS=1V, VGS=V, f=1khz.. ms Input Capacitance Ciss 4 pf VDS=1V, VGS=V, f=1mhz Reverse Transfer Capacitance Crss 1.1 pf * : The TF48 is classified by IDSS as follows : (unit : ma) Rank IDSS.6 to to. Ordering Information Device Package Shipping memo TF48--TL-H USFP 1,pcs./reel Pb Free and Halogen Free TF48--TL-H USFP 1,pcs./reel. ID -- VDS. ID -- VDS.. V GS =V. 1.. V GS =V --.1V --.V --.V --.4V V --.V --.V --.4V 1 4 Drain-to-Source Voltage, V DS -- V IT16. ID -- VGS V DS =1V 1 1 Drain-to-Source Voltage, V DS -- V IT161 ID -- VGS. V DS =1V IDSS=.mA.mA ma Gate-to-Source Voltage, V GS -- V IT Ta= C -- C C Gate-to-Source Voltage, V GS -- V IT16 No. A8-/6
3 TF48 Cutoff Voltage, V GS (off) -- V VGS(off) -- IDSS V DS =1V I D =μa Forward Transfer Admittance, yfs -- ms V DS =1V V GS =V f=1khz yfs -- IDSS Drain Current, I DSS -- ma Ciss -- VDS IT164 V GS =V f=1mhz -- pf Drain Current, I DSS -- ma Crss -- VDS IT16 V GS =V f=1mhz -- pf Input Capacitance, Ciss Reverse Transfer Capacitance, Crss Drain-to-Source Voltage, V DS -- V IT166 PD -- Ta Drain-to-Source Voltage, V DS -- V IT16 Allowable Power Dissipation, P D -- mw Ambient Temperature, Ta -- C IT168 No. A8-/6
4 TF48 Taping Specification TF48--TL-H, TF48--TL-H No. A8-4/6
5 TF48 Outline Drawing TF48--TL-H, TF48--TL-H Land Pattern Example Mass (g) Unit (.) mm Unit: mm No. A8-/6
6 TF48 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A8-6/6
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More informationCPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications
Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN
More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
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More information(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
More informationHigh-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features
More informationCollector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENA66B SA1 Bipolar Transistor V, A, Low VCE(sat) PNP TO-F-SG http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Low collector-to-emitter
More informationStrobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
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Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
More informationHigh-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
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Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
More information(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN69D SA16/SC69 Bipolar Transistor (-)V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of
More information2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
More information2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N
Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features
More informationLow collector to emitter saturation voltage Large current capacity
Ordering number : ENC SB1 Bipolar Transisitor V, A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT
More informationLA6581DM. Fan Motor Driver BLT Driver Single-Phase Full-Wave
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Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
More informationLow collector-to-emitter saturation voltage Large current capacity and wide ASO
Ordering number : EN1F SB11/SD16 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
More informationLarge current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.
Ordering number : ENA18B SC6144SG Bipolar Transistor V, A, Low VCE(sat) NPN TO-F-FS http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current
More informationHigh-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V
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More informationLow collector-to-emitter saturation voltage Fast switching speed
Ordering number : EN19B SB114/SD164 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment
More informationN Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
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More informationParameter Symbol Conditions Ratings Unit
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NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
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NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
More informationOverview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system.
Ordering number : ENA2052 LA1225MC Monolithic Linear IC FM IF Detector IC http://onsemi.com Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning
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