Features High ruggedness Low R DS(ON) (Typ 0.36Ω)@V GS =10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings Symbol SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Parameter Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V I D Continuous drain current (@T C =25 o C) 10* A Continuous drain current (@T C =100 o C) 6.3* A I DM Drain current pulsed (note 1) 40 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 270 mj E AR Repetitive avalanche energy (note 1) 60 mj dv/dt MOSFET dv/dt ruggedness (@VDS=0~400V) 30 V/ns dv/dt Peak diode recovery dv/dt (note 3) 20 V/ns P D Total power dissipation (@T C =25 o C) 178.6 41.7 104.2 96.2 125 43.1 W Derating factor above 25 o C 1.43 0.33 0.83 0.77 1 0.34 W/oC T STG, T J Operating junction temperature & storage temperature -55 ~ + 150 o C T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Unit 300 o C Value BV DSS : 650V TO220 TO220F TO251N TO252 TO262 TO220SF R thjc Thermal resistance, Junction to case 0.7 3.0 1.2 1.3 1.0 2.9 o C/W R thja Thermal resistance, Junction to ambient 53.7 48.7 80.0 64.1 50.5 o C/W I D : 10A R DS(ON) :0.36 Ω Item Sales Type Marking Package Packaging 1 SW P 10N65K SW10N65K TO-220 TUBE 2 SW F 10N65K SW10N65K TO-220F TUBE 3 SW N 10N65K SW10N65K TO-251N TUBE 4 SW D 10N65K SW10N65K TO-252 REEL 5 SW U 10N65K SW10N65K TO-262 TUBE 6 SW MN 10N65K SW10N65K TO-220SF TUBE 1 2 3 Unit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 1/8
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS =0V, I D =250uA 650 V ΔBV DSS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.65 V/ o C I DSS Drain to source leakage current V DS =650V, V GS =0V 1 ua V DS =520V, T C =125 o C 50 ua Gate to source leakage current, forward V GS =30V, V DS =0V 100 na I GSS Gate to source leakage current, reverse V GS =-30V, V DS =0V -100 na On characteristics V GS(TH) Gate threshold voltage V DS =V GS, I D =250uA 2 5 V R DS(ON) Drain to source on state resistance V GS =10V, I D =5A 0.36 0.4 Ω G fs Forward transconductance V DS =30V, I D =5A 6.8 S Dynamic characteristics C iss Input capacitance 1021 C oss Output capacitance V GS =0V, V DS =200V, f=1mhz 50 pf C rss Reverse transfer capacitance 2.2 t d(on) Turn on delay time 16 t r t d(off) Rising time Turn off delay time V DS =325V, I D =10A, R G =25Ω, V GS =10V (note 4,5) 34 55 t f Fall time 27 Q g Total gate charge 29 Q gs Gate-source charge V DS =520V, V GS =10V, I D =10A (note 4,5) 7 Q gd Gate-drain charge 14 ns nc Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 10 A I SM Pulsed source current diode in the MOSFET 40 A V SD Diode forward voltage drop. I S =10A, V GS =0V 1.4 V t rr Reverse recovery time I S =10A, V GS =0V, 266 ns Q rr Reverse recovery charge di F /dt=100a/us 3.6 uc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =60mH, I AS =3A, V DD = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 10A, di/dt = 100A/us, V DD BV DSS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 2/8
Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 3/8
Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9 Maximum safe operating area(to-220) Fig. 10. Maximum safe operating area(to-220f) Fig. 11. Maximum safe operating area(to-251n) Fig. 12. Maximum safe operating area(to-252) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 4/8
Fig. 13. Maximum safe operating area(to-262) Fig. 14. Maximum safe operating area(to-220sf) Fig. 15. Transient thermal response curve(to-220) Fig. 16. Transient thermal response curve(to-220f) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 5/8
Fig. 17. Transient thermal response curve(to-251n) Fig. 18. Transient thermal response curve(to-252) Fig. 19. Transient thermal response curve(to-262) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 6/8
Fig. 20. Transient thermal response curve(to-220sf) Fig. 21. Gate charge test circuit & waveform Fig. 22. Switching time test circuit & waveform R L V DS 90% V DS V DD V IN 10% 10% 10VIN R GS DUT t d(on) t r t d(off) t f t ON t OFF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 7/8
Fig. 23. Unclamped Inductive switching test circuit & waveform Fig. 24. Peak diode recovery dv/dt test circuit & waveform DUT + V DS V GS (DRIVER) 10V I S - L I S (DUT) di/dt V DS I RM R G V DD Diode reverse current 10V GS Same type as DUT V DS (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug. 2017. Rev. 10.0 8/8