N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.67Ω)@V GS =10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested Application:Adapter,LED,Charger characteristics. Order Codes Absolute maximum ratings Symbol Parameter *. Drain current is limited by junction temperature. Thermal characteristics 1 2 3 1. Gate 2. Drain 3. Source Value BV DSS : 800V I D : 8A R DS(ON) : 0.67Ω TO220F TO251 TO251N TO252 TO262 V DSS Drain to Source Voltage 800 V I D Continuous Drain Current (@T C =25 o C) 8* A Continuous Drain Current (@T C =100 o C) 5* A I DM Drain current pulsed (note 1) 24 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 270 mj E AR Repetitive Avalanche Energy (note 1) 30 mj dv/dt MOSFET dv/dt ruggedness (@VDS=0~400V) 30 V/ns dv/dt Peak diode recovery dv/dt (note 3) 20 V/ns P D Derating Factor above 25 o C 0.16 1.45 1.59 W/ o C Total power dissipation (@T C =25 o C) 20 181 198 W T STG, T J T L Symbol Operating Junction Temperature & Storage Temperature TO-251 Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Parameter TO-220F TO-251N TO-252 1 2 1 1 2 1 2 3 2 3 3 3 General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche TO-262 Item Sales Type Marking Package Packaging 1 SW F 8N80K SW8N80K TO-220F TUBE 2 SW I 8N80K SW8N80K TO-251 TUBE 3 SW N 8N80K SW8N80K TO-251N TUBE 4 SW D 8N80K SW8N80K TO-252 REEL 5 SW U 8N80K SW8N80K TO-262 TUBE Unit -55 ~ + 150 o C 300 o C Value TO220F TO251 TO251N TO252 TO262 R thjc Thermal resistance, Junction to case 6.2 0.69 0.63 o C/W R thja Thermal resistance, Junction to ambient 50 95 65 o C/W 1 2 3 Unit Jun. 2018. Rev. 7.0 1/7
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS =0V, I D =250uA 800 V ΔBV DSS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.73 V/ o C I DSS Drain to source leakage current V DS =800V, V GS =0V 1 ua V DS =640V, T C =125 o C 50 ua I Gate to source leakage current, forward V GS =30V, V DS =0V 100 na GSS Gate to source leakage current, reverse V GS =-30V, V DS =0V -100 na On characteristics V GS(TH) Gate threshold voltage V DS =V GS, I D =250uA 2 4 V R DS(ON) Drain to source on state resistance V GS =10V, I D =4A 0.67 0.80 Ω Gfs Forward Transconductance V DS =30V, I D =4A 6.5 S Dynamic characteristics C iss Input capacitance 993 C oss Output capacitance V GS =0V, V DS =200V, f=1mhz 44 C rss Reverse transfer capacitance 1.0 t d(on) Turn on delay time 17 tr Rising time V DS =400V, I D =8A, R G =25Ω, 41 V GS =10V t d(off) Turn off delay time (note 4,5) 71 t f Fall time 43 Q g Total gate charge 30 Q gs Gate-source charge V DS =640V, V GS =10V, I D =8A (note 4,5) 5.5 Q gd Gate-drain charge 14 pf ns nc R g Gate resistance V DS =0V, Scan F mode 1.1 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 8 A I SM Pulsed source current diode in the MOSFET 24 A V SD Diode forward voltage drop. I S =8A, V GS =0V 1.4 V T rr Reverse recovery time I S =8A, V GS =0V, 295 ns Q rr Reverse recovery Charge di F /dt=100a/us 3.6 uc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =60mH, I AS = 3A, V DD = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 8A, di/dt = 100A/us, V DD BV DSS, Staring T J =25 o C Pulse 4. Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Jun. 2018. Rev. 7.0 2/7
Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature Jun. 2018. Rev. 7.0 3/7
Fig. 7. Maximum safe operating area(to-220f) Fig. 8. Maximum safe operating area (TO-251/TO-251N/TO-252) Fig. 9. Maximum safe operating area(to-262) Fig. 10. Capacitance Characteristics Fig. 11. Transient thermal response curve (TO-220F) Jun. 2018. Rev. 7.0 4/7
Fig. 12. Transient thermal response curve (TO-251/TO-251N/TO-252) Fig. 13. Transient thermal response curve (TO-262) Fig. 14. Gate charge test circuit & waveform Jun. 2018. Rev. 7.0 5/7
Fig. 15. Switching time test circuit & waveform R L V DS 90% R GS V DS V DD V IN 10% 10% 10V IN DUT t d(on) t r t d(off) t f t ON t OFF Fig. 16. Unclamped Inductive switching test circuit & waveform Fig. 17. Peak diode recovery dv/dt test circuit & waveform DUT + V DS V GS (DRIVER) 10V I S - L I (DUT) S di/dt V DS I RM R G V DD Diode reverse current 10V GS Same type as DUT V DS (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop Jun. 2018. Rev. 7.0 6/7
DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Jun. 2018. Rev. 7.0 7/7