Super FAP-E 3S series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (.±.V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Thermal Characteristics Outline Drawings [mm] TO-F(SLS) Absolute Maximum Ratings at Tc= C (unless otherwise specified) Equivalent circuit schematic Gate(G) Drain(D) Source(S) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 6 V VDSX 6 V VGS = -3V Continuous Drain Current ID ± A Pulsed Drain Current IDP ±8 A Gate-Source Voltage VGS ±3 V Repetitive and Non-Repetitive Maximum AvalancheCurrent IAR A Note* Non-Repetitive Maximum Avalanche Energy EAS 38 mj Note* Repetitive Maximum Avalanche Energy EAR 6. mj Note*3 Peak Diode Recovery dv/dt dv/dt. kv/µs Note* Peak Diode Recovery -di/dt -di/dt A/µs Note* Maximum Power Dissipation PD.6 Ta= C W 6 Tc= C Operating and Storage Temperature range Tch C Tstg - to + C Isolation Voltage VISO kvrms t = 6sec, f = 6Hz Electrical Characteristics at Tc= C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=µA, VGS=V 6 - - V Gate Threshold Voltage VGS (th) ID=µA, VDS=VGS 3.7..7 V Zero Gate Voltage Drain Current IDSS VDS=6V, VGS=V Tch= C - - VDS=8V, VGS=V Tch= C - - µa Gate-Source Leakage Current IGSS VGS=±3V, VDS=V - na Drain-Source On-State Resistance RDS (on) ID=6A, VGS=V -.6.7 Ω Forward Transconductance gfs ID=6A, VDS=V 7 - S Input Capacitance Ciss VDS=V - 3 9 Output Capacitance Coss VGS=V - pf Reverse Transfer Capacitance Crss f=mhz - 8. 3 Turn-On Time td(on) Vcc=3V - 6 tr VGS=V - 6 Turn-Off Time td(off) ID=6A - 7 tf RG=7Ω - 9 9 ns Total Gate Charge QG - 37 6 Vcc=3V Gate-Source Charge QGS - 3 ID=A Gate-Drain Charge QGD - 8 VGS=V Gate-Drain Crossover Charge QSW - 6. nc Avalanche Capability IAV L=.6mH, Tch= C - - A Diode Forward On-Voltage VSD IF=A, VGS=V, Tch= C -.86.3 V Reverse Recovery Time trr IF=A, VGS=V -. - µs Reverse Recovery Charge Qrr -di/dt=a/µs, Tch= C -. - µc Description Symbol Test Conditions min. typ. max. Unit Rth (ch-c) Channel to case.9 C/W Thermal resistance Rth (ch-a) Channel to ambient 8. C/W Note * : Tch C Note * : Stating Tch= C, IAS=A, L=8.mH, Vcc=6V, RG=Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note * : IF -ID, -di/dt=a/µs, Vcc BVDSS, Tch C. Note * : IF -ID, dv/dt=.kv/µs, Vcc BVDSS, Tch C.
8 7 Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=(Single pulse),tc= c t= µs 6 µs µs PD [W] 3 ms - Power loss waveform : Square waveform P D t 7 Tc [ C] Typical Output Characteristics ID=f(VDS):8µs pulse test,tch= C - - 3 Typical Transfer Characteristic ID=f(VGS):8µs pulse test,vds=v,tch= C V 8.V 7.V 7.V ID[A] 6.V VGS=6.V. 8 6 Typical Transconductance gfs=f(id):8µs pulse test,vds=v,tch= C.3. 6 8 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):8µs pulse test,tch= C VGS=6.V 6.V 7V gfs [S] RDS(on) [ Ω ]...9.8 8V V V.7.6...
. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=V 8 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=µA. 7 6 RDS(on) [ Ω ].. max. typ. VGS(th) [V] 3 max. typ. min... - - 7 Tch [ C] - - 7 Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=A,Tch= C Typical Capacitance C=f(VDS):VGS=V,f=MHz Vcc= V 3V 8V 3 Ciss 8 VGS [V] 6 C [pf] Coss Crss 3 6 7 Qg [nc] - - Typical Forward Characteristics of Reverse Diode IF=f(VSD):8µs pulse test,tch= C 3 Typical Switching Characteristics vs. ID t=f(id):vcc=3v,vgs=v,rg=7ω td(off) IF [A] t [ns] td(on) tr tf.....7... VSD [V] - 3
6 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=6V,I(AV)<=A Transient Thermal Impedance Zth(ch-c)=f(t):D= EAV [mj] 3 =A =7A Zth(ch- c) [ C/ W ] - - =A 7 starting Tch [ C] -3-6 - - -3 - - t [sec]
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