dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R S(on) = 0.040Ω I = 29 escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220B bsolute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ 0V 29 I @ T C = 00 C Continuous rain Current, V GS @ 0V 20 I M Pulsed rain Current 00 P @T C = 25 C Power issipation 68 W Linear erating Factor 0.45 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy2 65 mj I R valanche Current 6 E R Repetitive valanche Energy 6.8 mj dv/dt Peak iode Recovery dv/dt 3 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case 2.2 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 www.irf.com /3/03
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.052 V/ C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance 0.040 Ω V GS = 0V, I = 64 V GS(th) Gate Threshold Voltage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 6.5 S V S = 25V, I = 6 25 V S = 55V, V GS = 0V I SS rain-to-source Leakage Current µ 250 V S = 44V, V GS = 0V, T J = 50 C Gate-to-Source Forward Leakage 00 V GS = 20V I GSS n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 34 I = 6 Q gs Gate-to-Source Charge 6.8 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 4 V GS = 0V, See Fig. 6 and 3 4 t d(on) Turn-On elay Time 7.0 V = 28V t r Rise Time 49 I = 6 ns t d(off) Turn-Off elay Time 3 R G = 8Ω t f Fall Time 40 R =.8Ω, See Fig. 0 4 Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 240 pf V S = 25V C rss Reverse Transfer Capacitance 00 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 29 (Body iode) showing the I SM Pulsed Source Current integral reverse G 00 (Body iode) p-n junction diode. S V S iode Forward Voltage.6 V T J = 25 C, I S = 6, V GS = 0V 4 t rr Reverse Recovery Time 57 86 ns T J = 25 C, I F = 6 Q rr Reverse Recovery Charge 30 200 nc di/dt = 00/µs 4 t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) 3 I S 6, di/dt 420/µs, V V (BR)SS, T J 75 C 2 V = 25V, starting T J = 25 C, L = 40µH R G = 25Ω, I S = 6. (See Figure 2) 4 Pulse width 300µs; duty cycle 2%. 2 www.irf.com
I, rain-to-source Current () 000 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 000 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH 0. T C = 25 C 0. 0 00 V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T C = 75 C 0. 0 00 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 00 0 T = 25 C J T = 75 C J V S = 25V 20µs PULSE WITH 4 5 6 7 8 9 0 V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.4 2.0.6.2 0.8 0.4 I = 26 V GS = 0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 200 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd 000 C iss C oss = C ds Cgd 800 C oss 600 400 C rss 200 0 0 00 V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS 20 6 2 8 4 0 I = 6 V S = 44V V S = 28V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 30 40 Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 000 00 0 T = 75 C J T = 25 C J V GS = 0V 0.4 0.8.2.6 2.0 V S, Source-to-rain Voltage (V) I, rain Current () 000 OPERTION IN THIS RE LIMITE BY RS(on) 00 0µs 00µs 0 ms T C = 25 C T J = 75 C Single Pulse 0 00 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
30 V S R I, rain Current () 25 20 5 0 R G V GS 0 V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. Switching Time Test Circuit - V 5 0 25 50 75 00 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature V S 90% 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Thermal Response (Z thjc ) 0. = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
L V S.U.T. R G V - 0 V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS t p E S, Single Pulse valanche Energy (mj) 40 20 00 80 60 40 20 I TOP 6.5 BOTTOM 6 V = 25V 0 25 50 75 00 25 50 75 Starting T J, Junction Temperature ( C) V S V Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ 0 V Q GS Q G Q G 2V.2µF.3µF.U.T. V - S V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com
Peak iode Recovery dv/dt Test Circuit.U.T 3 - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer 2 - - 4 R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * VGS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS www.irf.com 7
TO-220B Package Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) - - 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) 2 3 4 6.47 (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LE SSIGNMENTS LE SSIGNMENTS HEXFET IGBTs, CoPCK - GTE - GTE 2 - RIN - GTE 2- RIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - RIN 3- EMITTER 4- RIN 4- COLLECTOR 3X.40 (.055).5 (.045) 2.54 (.00) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) IMENSIONING & TOLERNCING PER NSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEEC OUTLINE TO-220B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. TO-220B Part Marking Information EXMPLE: THIS IS N IRF00 LOT COE 789 SSEMBLE ON WW 9, 997 IN THE SSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE PRT NUMBER TE COE YER 7 = 997 WEEK 9 LINE C ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) 252-705 TC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information.0/03 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/